JP2008500457A5 - - Google Patents
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- JP2008500457A5 JP2008500457A5 JP2007515204A JP2007515204A JP2008500457A5 JP 2008500457 A5 JP2008500457 A5 JP 2008500457A5 JP 2007515204 A JP2007515204 A JP 2007515204A JP 2007515204 A JP2007515204 A JP 2007515204A JP 2008500457 A5 JP2008500457 A5 JP 2008500457A5
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Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US57490504P | 2004-05-26 | 2004-05-26 | |
| US60/574,905 | 2004-05-26 | ||
| US10/950,349 US7527713B2 (en) | 2004-05-26 | 2004-09-23 | Variable quadruple electromagnet array in plasma processing |
| US10/950,349 | 2004-09-23 | ||
| US11/119,350 | 2005-04-29 | ||
| US11/119,350 US7686926B2 (en) | 2004-05-26 | 2005-04-29 | Multi-step process for forming a metal barrier in a sputter reactor |
| PCT/US2005/017828 WO2005118907A1 (en) | 2004-05-26 | 2005-05-20 | Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008500457A JP2008500457A (ja) | 2008-01-10 |
| JP2008500457A5 true JP2008500457A5 (enExample) | 2008-05-29 |
| JP5291338B2 JP5291338B2 (ja) | 2013-09-18 |
Family
ID=35462926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007515204A Expired - Lifetime JP5291338B2 (ja) | 2004-05-26 | 2005-05-20 | スパッタ反応装置内で金属バリアを形成するために特にマルチステッププロセスで使用される可変四重電磁石アレー |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7686926B2 (enExample) |
| EP (1) | EP1774054A4 (enExample) |
| JP (1) | JP5291338B2 (enExample) |
| KR (1) | KR100927275B1 (enExample) |
| CN (1) | CN1950538B (enExample) |
| WO (1) | WO2005118907A1 (enExample) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9771648B2 (en) | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
| US20070209925A1 (en) * | 2006-03-09 | 2007-09-13 | Applied Materials, Inc. | Etch and sidewall selectivity in plasma sputtering |
| JP2008010532A (ja) * | 2006-06-28 | 2008-01-17 | Sony Corp | 半導体装置の製造方法 |
| US7846310B2 (en) * | 2006-12-13 | 2010-12-07 | Applied Materials, Inc. | Encapsulated and water cooled electromagnet array |
| WO2008127493A1 (en) * | 2007-01-29 | 2008-10-23 | Tosoh Smd, Inc. | Ultra smooth face sputter targets and methods of producing same |
| US8920613B2 (en) * | 2007-01-31 | 2014-12-30 | Applied Materials, Inc. | Offset magnet compensation for non-uniform plasma |
| US20080190760A1 (en) * | 2007-02-08 | 2008-08-14 | Applied Materials, Inc. | Resputtered copper seed layer |
| US7659204B2 (en) * | 2007-03-26 | 2010-02-09 | Applied Materials, Inc. | Oxidized barrier layer |
| US20090004836A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
| US9123509B2 (en) * | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| US9856558B2 (en) * | 2008-03-14 | 2018-01-02 | Applied Materials, Inc. | Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface |
| TWI398537B (zh) * | 2008-04-03 | 2013-06-11 | Oc Oerlikon Balzers Ag | 濺鍍設備及用以製造金屬化結構的方法 |
| US20100096255A1 (en) * | 2008-10-22 | 2010-04-22 | Applied Materials, Inc. | Gap fill improvement methods for phase-change materials |
| JP5705290B2 (ja) * | 2009-01-15 | 2015-04-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8900471B2 (en) * | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
| US20120097527A1 (en) * | 2009-07-17 | 2012-04-26 | Ulvac, Inc. | Film formation apparatus and film forming method |
| WO2011007830A1 (ja) * | 2009-07-17 | 2011-01-20 | 株式会社アルバック | 成膜装置 |
| US8956516B2 (en) * | 2009-08-31 | 2015-02-17 | Semicat, Inc. | System and apparatus to facilitate physical vapor deposition to modify non-metal films on semiconductor substrates |
| US8936703B2 (en) * | 2009-08-31 | 2015-01-20 | Semicat, Inc. | Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition |
| US20130206725A1 (en) * | 2009-11-06 | 2013-08-15 | Karl Leeser | Creation of off-axis null magnetic field locus for improved uniformity in plasma deposition and etching |
| US8715789B2 (en) * | 2009-12-18 | 2014-05-06 | Sub-One Technology, Inc. | Chemical vapor deposition for an interior of a hollow article with high aspect ratio |
| US8597462B2 (en) * | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
| CN102300383B (zh) * | 2010-06-23 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种电感耦合装置及应用该装置的等离子体处理设备 |
| CN101962746B (zh) * | 2010-10-08 | 2012-09-12 | 中国航空工业集团公司北京航空制造工程研究所 | 金属零件表面制备高附着力Ta和TaN叠层薄膜的方法 |
| US9269546B2 (en) * | 2010-10-22 | 2016-02-23 | Applied Materials, Inc. | Plasma reactor with electron beam plasma source having a uniform magnetic field |
| WO2012090475A1 (ja) * | 2010-12-28 | 2012-07-05 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| CN102361006B (zh) * | 2011-10-25 | 2016-08-24 | 上海集成电路研发中心有限公司 | 一种低应力钽氮薄膜的制备方法 |
| KR101311467B1 (ko) * | 2011-11-25 | 2013-09-25 | 한국기초과학지원연구원 | 전자 맴돌이 공명 이온원 장치 및 이의 인출 전류를 증가시키는 방법 |
| JP6009171B2 (ja) * | 2012-02-14 | 2016-10-19 | 東京エレクトロン株式会社 | 基板処理装置 |
| US9093252B2 (en) * | 2012-02-16 | 2015-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rotation plus vibration magnet for magnetron sputtering apparatus |
| CN105431565B (zh) * | 2012-12-19 | 2018-06-05 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
| TWI582256B (zh) * | 2013-02-04 | 2017-05-11 | 愛發科股份有限公司 | 薄型基板處理裝置 |
| US9831074B2 (en) * | 2013-10-24 | 2017-11-28 | Applied Materials, Inc. | Bipolar collimator utilized in a physical vapor deposition chamber |
| CN103866257B (zh) * | 2014-03-31 | 2016-01-27 | 苏州大学 | 一种三频高密度等离子体辅助磁控溅射薄膜的制备方法 |
| JP6284825B2 (ja) * | 2014-05-19 | 2018-02-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20150354054A1 (en) * | 2014-06-06 | 2015-12-10 | Applied Materials, Inc. | Cooled process tool adapter for use in substrate processing chambers |
| US9613783B2 (en) * | 2014-07-24 | 2017-04-04 | Applied Materials, Inc. | Method and apparatus for controlling a magnetic field in a plasma chamber |
| US9968016B2 (en) * | 2014-08-11 | 2018-05-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Magnetic field shield |
| US10249479B2 (en) * | 2015-01-30 | 2019-04-02 | Applied Materials, Inc. | Magnet configurations for radial uniformity tuning of ICP plasmas |
| GB201505578D0 (en) * | 2015-03-31 | 2015-05-13 | Spts Technologies Ltd | Method and apparatus for depositing a material |
| US11295935B2 (en) * | 2015-05-11 | 2022-04-05 | Ebara Corporation | Electromagnet device, electromagnet controller, electromagnet control method, and electromagnet system |
| WO2017039066A1 (ko) * | 2015-09-01 | 2017-03-09 | 한국기초과학지원연구원 | 다중 코어 구조를 갖는 전자석 |
| US11037768B2 (en) * | 2016-03-05 | 2021-06-15 | Applied Materials, Inc. | Methods and apparatus for controlling ion fraction in physical vapor deposition processes |
| US10128083B2 (en) * | 2016-06-01 | 2018-11-13 | Vebco Instruments Inc. | Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas |
| CN107591357B (zh) | 2016-07-07 | 2020-09-04 | 中芯国际集成电路制造(北京)有限公司 | 互连结构及其制造方法 |
| CN108004516B (zh) * | 2016-10-31 | 2020-06-19 | 北京北方华创微电子装备有限公司 | 磁控溅射腔室、磁控溅射设备以及磁控管 |
| US10563304B2 (en) * | 2017-04-07 | 2020-02-18 | Applied Materials, Inc. | Methods and apparatus for dynamically treating atomic layer deposition films in physical vapor deposition chambers |
| US10867776B2 (en) * | 2018-05-09 | 2020-12-15 | Applied Materials, Inc. | Physical vapor deposition in-chamber electro-magnet |
| US20200058539A1 (en) * | 2018-08-17 | 2020-02-20 | Applied Materials, Inc. | Coating material for processing chambers |
| GB201909538D0 (en) | 2019-07-02 | 2019-08-14 | Spts Technologies Ltd | Deposition apparatus |
| JP7416906B2 (ja) * | 2019-07-16 | 2024-01-17 | アプライド マテリアルズ インコーポレイテッド | 改良されたプラズマ制御のためのem源 |
| JP7222848B2 (ja) * | 2019-08-26 | 2023-02-15 | 株式会社荏原製作所 | 電磁石制御装置および電磁石システム |
| US12020898B2 (en) * | 2019-09-09 | 2024-06-25 | Tokyo Electron Limited | Plasma processing system and method of processing substrate |
| US11753736B2 (en) | 2020-11-16 | 2023-09-12 | Raytheon Company | Indium electroplating on physical vapor deposition tantalum |
| KR102647736B1 (ko) * | 2021-03-05 | 2024-03-14 | 에이피시스템 주식회사 | 스퍼터링 장치 및 스퍼터링 방법 |
| US12203163B2 (en) * | 2021-05-28 | 2025-01-21 | Applied Materials, Inc. | Methods for shaping magnetic fields during semiconductor processing |
| US11948784B2 (en) | 2021-10-21 | 2024-04-02 | Applied Materials, Inc. | Tilted PVD source with rotating pedestal |
| KR20240010973A (ko) * | 2022-07-18 | 2024-01-25 | 에스케이하이닉스 주식회사 | 유도 결합형 플라즈마 방식의 이온 주입 장치 |
| US12195843B2 (en) * | 2023-01-19 | 2025-01-14 | Applied Materials, Inc. | Multicathode PVD system for high aspect ratio barrier seed deposition |
| US20250129468A1 (en) * | 2023-10-18 | 2025-04-24 | Northrop Grumman Systems Corporation | Sputtering of high-quality superconducting thin films |
| US20250157790A1 (en) * | 2023-11-10 | 2025-05-15 | Applied Materials, Inc. | Apparatus and method of damage mitigation and step coverage enhancement |
Family Cites Families (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3500328A1 (de) * | 1985-01-07 | 1986-07-10 | Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa | Zerstaeubungsaetzvorrichtung |
| US4911814A (en) | 1988-02-08 | 1990-03-27 | Nippon Telegraph And Telephone Corporation | Thin film forming apparatus and ion source utilizing sputtering with microwave plasma |
| JP2566648B2 (ja) * | 1988-05-23 | 1996-12-25 | 日本電信電話株式会社 | プラズマエッチング装置 |
| DE68912400T2 (de) * | 1988-05-23 | 1994-08-18 | Nippon Telegraph & Telephone | Plasmaätzvorrichtung. |
| JPH02185967A (ja) * | 1989-01-13 | 1990-07-20 | Hitachi Ltd | バイアススパッタリング方法およびその装置 |
| US5122251A (en) | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US4990229A (en) | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5429070A (en) * | 1989-06-13 | 1995-07-04 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
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| US5312778A (en) | 1989-10-03 | 1994-05-17 | Applied Materials, Inc. | Method for plasma processing using magnetically enhanced plasma chemical vapor deposition |
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| JPH07268622A (ja) * | 1994-03-01 | 1995-10-17 | Applied Sci & Technol Inc | マイクロ波プラズマ付着源 |
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| JPH11102799A (ja) | 1997-09-26 | 1999-04-13 | Mitsubishi Electric Corp | プラズマ発生装置 |
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| JP2001110597A (ja) * | 1999-10-12 | 2001-04-20 | Ulvac Japan Ltd | 磁気中性線放電プラズマ発生装置 |
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| JP2001328127A (ja) * | 2000-05-19 | 2001-11-27 | Mitsubishi Heavy Ind Ltd | 樹脂充填物の製造装置 |
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| US7527713B2 (en) | 2004-05-26 | 2009-05-05 | Applied Materials, Inc. | Variable quadruple electromagnet array in plasma processing |
-
2005
- 2005-04-29 US US11/119,350 patent/US7686926B2/en active Active
- 2005-05-20 CN CN200580013590.0A patent/CN1950538B/zh not_active Expired - Lifetime
- 2005-05-20 WO PCT/US2005/017828 patent/WO2005118907A1/en not_active Ceased
- 2005-05-20 JP JP2007515204A patent/JP5291338B2/ja not_active Expired - Lifetime
- 2005-05-20 KR KR1020067022292A patent/KR100927275B1/ko not_active Expired - Lifetime
- 2005-05-20 EP EP05752116A patent/EP1774054A4/en not_active Withdrawn
-
2010
- 2010-01-28 US US12/695,643 patent/US8871064B2/en active Active
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