JP2007103929A5 - - Google Patents

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Publication number
JP2007103929A5
JP2007103929A5 JP2006259419A JP2006259419A JP2007103929A5 JP 2007103929 A5 JP2007103929 A5 JP 2007103929A5 JP 2006259419 A JP2006259419 A JP 2006259419A JP 2006259419 A JP2006259419 A JP 2006259419A JP 2007103929 A5 JP2007103929 A5 JP 2007103929A5
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JP
Japan
Prior art keywords
processing chamber
plasma
processing
antenna
chamber
Prior art date
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Application number
JP2006259419A
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English (en)
Japanese (ja)
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JP5101069B2 (ja
JP2007103929A (ja
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Publication date
Priority claimed from US11/240,670 external-priority patent/US20070074968A1/en
Application filed filed Critical
Publication of JP2007103929A publication Critical patent/JP2007103929A/ja
Publication of JP2007103929A5 publication Critical patent/JP2007103929A5/ja
Application granted granted Critical
Publication of JP5101069B2 publication Critical patent/JP5101069B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006259419A 2005-09-30 2006-09-25 高圧力蒸着及び低圧力エッチング処理の組み合わせにおける均一プラズマのためのｉｐｖｄのためのｉｃｐ源 Expired - Fee Related JP5101069B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/240,670 US20070074968A1 (en) 2005-09-30 2005-09-30 ICP source for iPVD for uniform plasma in combination high pressure deposition and low pressure etch process
US11/240,670 2005-09-30

Publications (3)

Publication Number Publication Date
JP2007103929A JP2007103929A (ja) 2007-04-19
JP2007103929A5 true JP2007103929A5 (enExample) 2009-11-05
JP5101069B2 JP5101069B2 (ja) 2012-12-19

Family

ID=37900851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006259419A Expired - Fee Related JP5101069B2 (ja) 2005-09-30 2006-09-25 高圧力蒸着及び低圧力エッチング処理の組み合わせにおける均一プラズマのためのｉｐｖｄのためのｉｃｐ源

Country Status (2)

Country Link
US (1) US20070074968A1 (enExample)
JP (1) JP5101069B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100760920B1 (ko) * 2006-07-25 2007-09-21 동부일렉트로닉스 주식회사 반도체 집적회로 소자에서 구리 배선을 형성하는 방법
KR101456810B1 (ko) * 2010-09-27 2014-10-31 베이징 엔엠씨 씨오., 엘티디. 플라즈마 가공 설비
US9911583B1 (en) * 2015-03-13 2018-03-06 HIA, Inc. Apparatus for enhanced physical vapor deposition
JP2017033982A (ja) * 2015-07-29 2017-02-09 東京エレクトロン株式会社 多層膜をエッチングする方法
US9997364B2 (en) 2016-10-19 2018-06-12 Lam Research Corporation High aspect ratio etch
JP6653066B2 (ja) * 2017-05-23 2020-02-26 日新イオン機器株式会社 プラズマ源
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
CN109585032B (zh) * 2018-10-29 2021-02-02 大连民族大学 一种耐高温全钨面向等离子体反应器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0798521B2 (ja) * 1986-08-20 1995-10-25 澁谷工業株式会社 回転式重量充填装置
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
US5707692A (en) * 1990-10-23 1998-01-13 Canon Kabushiki Kaisha Apparatus and method for processing a base substance using plasma and a magnetic field
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US5800688A (en) * 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering
US5948215A (en) * 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
WO1998048444A1 (en) * 1997-04-21 1998-10-29 Tokyo Electron Arizona, Inc. Method and apparatus for ionized sputtering of materials
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6197165B1 (en) * 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6254745B1 (en) * 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
US6523493B1 (en) * 2000-08-01 2003-02-25 Tokyo Electron Limited Ring-shaped high-density plasma source and method
KR100878103B1 (ko) * 2001-05-04 2009-01-14 도쿄엘렉트론가부시키가이샤 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ
US6652711B2 (en) * 2001-06-06 2003-11-25 Tokyo Electron Limited Inductively-coupled plasma processing system
US7041201B2 (en) * 2001-11-14 2006-05-09 Applied Materials, Inc. Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
KR101001743B1 (ko) * 2003-11-17 2010-12-15 삼성전자주식회사 헬리컬 자기-공진 코일을 이용한 이온화 물리적 기상 증착장치

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