JP5101069B2 - 高圧力蒸着及び低圧力エッチング処理の組み合わせにおける均一プラズマのためのｉｐｖｄのためのｉｃｐ源 - Google Patents

高圧力蒸着及び低圧力エッチング処理の組み合わせにおける均一プラズマのためのｉｐｖｄのためのｉｃｐ源 Download PDF

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JP5101069B2
JP5101069B2 JP2006259419A JP2006259419A JP5101069B2 JP 5101069 B2 JP5101069 B2 JP 5101069B2 JP 2006259419 A JP2006259419 A JP 2006259419A JP 2006259419 A JP2006259419 A JP 2006259419A JP 5101069 B2 JP5101069 B2 JP 5101069B2
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Prior art keywords
processing chamber
plasma
vacuum processing
ipvd
chamber
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Japanese (ja)
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JP2007103929A (ja
JP2007103929A5 (enExample
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ミルコ・ヴコヴィック
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2006259419A 2005-09-30 2006-09-25 高圧力蒸着及び低圧力エッチング処理の組み合わせにおける均一プラズマのためのｉｐｖｄのためのｉｃｐ源 Expired - Fee Related JP5101069B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/240,670 2005-09-30
US11/240,670 US20070074968A1 (en) 2005-09-30 2005-09-30 ICP source for iPVD for uniform plasma in combination high pressure deposition and low pressure etch process

Publications (3)

Publication Number Publication Date
JP2007103929A JP2007103929A (ja) 2007-04-19
JP2007103929A5 JP2007103929A5 (enExample) 2009-11-05
JP5101069B2 true JP5101069B2 (ja) 2012-12-19

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Family Applications (1)

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JP2006259419A Expired - Fee Related JP5101069B2 (ja) 2005-09-30 2006-09-25 高圧力蒸着及び低圧力エッチング処理の組み合わせにおける均一プラズマのためのｉｐｖｄのためのｉｃｐ源

Country Status (2)

Country Link
US (1) US20070074968A1 (enExample)
JP (1) JP5101069B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109585032A (zh) * 2018-10-29 2019-04-05 大连民族大学 一种耐高温全钨面向等离子体反应器

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100760920B1 (ko) * 2006-07-25 2007-09-21 동부일렉트로닉스 주식회사 반도체 집적회로 소자에서 구리 배선을 형성하는 방법
WO2012040986A1 (zh) * 2010-09-27 2012-04-05 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体加工设备
US9911583B1 (en) * 2015-03-13 2018-03-06 HIA, Inc. Apparatus for enhanced physical vapor deposition
JP2017033982A (ja) * 2015-07-29 2017-02-09 東京エレクトロン株式会社 多層膜をエッチングする方法
US9997364B2 (en) 2016-10-19 2018-06-12 Lam Research Corporation High aspect ratio etch
JP6653066B2 (ja) * 2017-05-23 2020-02-26 日新イオン機器株式会社 プラズマ源
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts

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JPH0798521B2 (ja) * 1986-08-20 1995-10-25 澁谷工業株式会社 回転式重量充填装置
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
US5707692A (en) * 1990-10-23 1998-01-13 Canon Kabushiki Kaisha Apparatus and method for processing a base substance using plasma and a magnetic field
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
KR100322330B1 (ko) * 1997-04-21 2002-03-18 히가시 데츠로 재료의 이온 스퍼터링 방법 및 장치
US5948215A (en) * 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
US5800688A (en) * 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6197165B1 (en) * 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6254745B1 (en) * 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
US6523493B1 (en) * 2000-08-01 2003-02-25 Tokyo Electron Limited Ring-shaped high-density plasma source and method
JP4429605B2 (ja) * 2001-05-04 2010-03-10 東京エレクトロン株式会社 シーケンシャルな堆積及びエッチングを備えたイオン化ｐｖｄ方法及び装置
US6652711B2 (en) * 2001-06-06 2003-11-25 Tokyo Electron Limited Inductively-coupled plasma processing system
US7041201B2 (en) * 2001-11-14 2006-05-09 Applied Materials, Inc. Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
KR101001743B1 (ko) * 2003-11-17 2010-12-15 삼성전자주식회사 헬리컬 자기-공진 코일을 이용한 이온화 물리적 기상 증착장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109585032A (zh) * 2018-10-29 2019-04-05 大连民族大学 一种耐高温全钨面向等离子体反应器

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US20070074968A1 (en) 2007-04-05
JP2007103929A (ja) 2007-04-19

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