CN105431565B - 钽溅射靶及其制造方法 - Google Patents
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- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 74
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 230000009467 reduction Effects 0.000 claims description 18
- 238000005097 cold rolling Methods 0.000 claims description 17
- 238000005242 forging Methods 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000001953 recrystallisation Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000005096 rolling process Methods 0.000 claims description 12
- 238000005477 sputtering target Methods 0.000 claims description 12
- 238000002441 X-ray diffraction Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 10
- 238000003723 Smelting Methods 0.000 claims description 7
- 238000005266 casting Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000010949 copper Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 230000005856 abnormality Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010273 cold forging Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 241001424392 Lucia limbaria Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- C01B21/00—Nitrogen; Compounds thereof
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- C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
- C01B21/0617—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with vanadium, niobium or tantalum
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Abstract
一种钽溅射靶,其特征在于,在钽溅射靶的溅射面中,(200)面的取向率大于70%,且(222)面的取向率为30%以下。通过控制靶的晶体取向,具有如下效果:降低钽靶的放电电压,从而容易产生等离子体,并且提高等离子体的稳定性。
Description
技术领域
本发明涉及钽溅射靶及其制造方法。尤其是涉及用于形成作为LSI中铜布线的扩散阻挡层的Ta膜或者TaN膜的钽溅射靶及其制造方法。
背景技术
以往,使用铝作为半导体元件的布线材料,但随着元件的微细化、高集成化,显现出布线延迟的问题,逐渐使用电阻小的铜来代替铝。铜作为布线材料非常有效,但铜本身是活跃的金属,因此存在扩散至层间绝缘膜而导致污染的问题,需要在铜布线与层间绝缘膜之间形成Ta膜或TaN膜等扩散阻挡层。
通常,Ta膜或TaN膜通过用钽靶进行溅射而成膜。迄今,对于钽靶而言,关于对溅射时的性能造成的影响,已知靶中含有的各种杂质、气体成分、晶体的面取向、晶粒直径等对成膜速度、膜厚的均匀性、粉粒产生等造成影响。
例如,专利文献1中记载了,通过形成从靶厚度的30%的位置向靶的中心面(222)取向占优的晶体组织,提高膜的均匀性。
另外,专利文献2中记载了,通过使钽靶的晶体取向随机(不对齐于特定的晶体取向),增大成膜速度并提高膜的均匀性。
另外,专利文献3中记载了,通过在溅射面中选择性地增加原子密度高的(110)、(200)、(211)的面取向,提高成膜速度并抑制面取向的波动,从而提高均一性。
此外,专利文献4中记载了,通过将由X射线衍射求出的(110)面的强度比随溅射表面部分位置的波动调节为20%以内,提高膜厚均匀性。
另外,专利文献5中描述了将模锻、挤出、旋转锻造、无润滑的镦锻与多向轧制组合使用,可以制作具有非常强的(111)、(100)等结晶学织构的圆形金属靶。
此外,下述专利文献6中记载了钽溅射靶的制造方法,其中,对钽锭实施锻造、退火、轧制加工,在最终组成加工后,再在1173K以下的温度下进行退火,使未再结晶组织为20%以下、90%以下。
另外,专利文献7中公开了如下技术:通过锻造、冷轧等加工和热处理,使靶的溅射面的峰的相对强度为(110)>(211)>(200),从而使溅射特性稳定。
此外,专利文献8中记载了,对钽锭进行锻造,在该锻造工序中进行两次以上的热处理,进而实施冷轧,并进行再结晶热处理。
然而,在上述任一专利文献中均未有如下设想:通过控制靶的溅射面中的晶体取向,降低钽靶的放电电压,从而容易产生等离子体,并且提高等离子体的稳定性。
现有技术文献
专利文献
专利文献1:日本特开2004-107758号公报
专利文献2:国际公开2005/045090号
专利文献3:日本特开平11-80942号公报
专利文献4:日本特开2002-363736号公报
专利文献5:日本特表2008-532765号公报
专利文献6:日本专利第4754617号
专利文献7:国际公开2011/061897号
专利文献8:日本专利第4714123号
发明内容
发明所要解决的问题
本发明的课题在于,对于钽溅射靶而言,通过控制靶的溅射面中的晶体取向,降低钽靶的放电电压,从而容易产生等离子体,并且提高等离子体的稳定性。
尤其是,本发明的课题在于提供一种钽溅射靶,该钽溅射靶在形成能够有效地防止由活跃的Cu的扩散而导致的布线周围的污染的包含Ta膜或者TaN膜等的扩散阻挡层时有用。
用于解决问题的手段
为了解决上述课题,本发明提供以下的发明。
1)一种钽溅射靶,其特征在于,在钽溅射靶的溅射面中,(200)面的取向率大于70%,且(222)面的取向率为30%以下。
2)如上述1)所述的钽溅射靶,其特征在于,在钽溅射靶的溅射面中,(200)面的取向率为80%以上,且(222)面的取向率为20%以下。
3)一种扩散阻挡层用薄膜,其通过使用上述1)~2)中任一项所述的溅射靶而形成。
4)一种半导体器件,其使用了上述3)所述的扩散阻挡层用薄膜。
另外,本发明提供:
5)一种钽溅射靶的制造方法,其特征在于,对经熔炼和铸造的钽锭进行锻造和再结晶退火,然后进行轧制和热处理,从而形成在靶的溅射面中(200)面的取向率大于70%且(222)面的取向率为30%以下的晶体组织。
6)如上述5)所述的钽溅射靶的制造方法,其特征在于,对经熔炼和铸造的钽锭进行锻造和再结晶退火,然后进行轧制和热处理,从而形成在靶的溅射面中(200)面的取向率为80%以上且(222)面的取向率为20%以下的晶体组织。
7)如上述5)~6)中任一项所述的钽溅射靶的制造方法,其特征在于,使用轧辊直径500mm以下的轧辊,在轧制速度10m/分钟以上、压下率大于80%的条件下进行冷轧。
8)如上述5)~7)中任一项所述的钽溅射靶的制造方法,其特征在于,在900℃~1400℃的温度下进行热处理。
9)如上述5)~8)中任一项所述的钽溅射靶的制造方法,其特征在于,轧制和热处理后,通过切削、抛光进行表面精加工。
发明效果
通过控制靶的溅射面中的晶体取向,本发明的钽溅射靶具有如下优良效果:可以降低钽靶的放电电压,从而容易产生等离子体,并且可以提高等离子体的稳定性。尤其是,在形成能够有效地防止由活跃的Cu的扩散而导致的布线周围的污染的包含Ta膜或者TaN膜等的扩散阻挡层时具有优良效果。
具体实施方式
本发明的钽溅射靶的特征在于提高该钽溅射靶的溅射面中的(200)面的取向率且降低(222)面的取向率。
钽的晶体结构为体心立方晶格结构(简称BCC),因此(222)面的相邻原子间距离比(200)面短,(222)面的原子处于比(200)面更密堆积的状态。因此,认为在溅射时(222)面放出比(200)面更多的钽原子,从而溅射速率(成膜速度)更快。
本发明中,对于钽溅射靶而言,其溅射面中的(200)面的取向率大于70%且(222)面的取向率小于30%。优选的是(200)面的取向率为80%以上且(222)面的取向率为20%以下。
认为通过这样提高溅射面中的(200)面的取向率、并降低(222)面的取向率,在通常条件下溅射速率(成膜速度)变慢。然而,在不需要过度提高成膜速度的情况下,具有如下优点:可以降低钽靶的放电电压,因此容易产生等离子体,并且可以使等离子体稳定。
通常,通过溅射进行钽膜的成膜时,调节电压和电流使得能够以设定的输入功率保存放电。然而,有时电流由于某种影响而降低,为了将功率保持在恒定值,电压上升,通常将这种状态称为放电异常。
本发明中,对于钽溅射靶而言,通过控制靶的溅射面中的晶体取向,可以降低钽靶的放电电压,使等离子体稳定,因而能够抑制在上述溅射时的放电异常的发生。尤其是,通过使放电电压为620V以下且使放电电压波动为20V以下,能够降低放电异常发生率。
本发明中,取向率是指将通过X射线衍射法得到的(110)、(200)、(211)、(310)、(222)、(321)各自的衍射峰的测定强度标准化,将各个面取向的强度的总和设为100时的特定的面取向的强度比。需要说明的是,标准化使用JCPDS(粉末衍射标准联合委员会(JointCommittee for Powder Diffraction Standard))。
例如,(200)面的取向率(%)为:
{[(200)的测定强度/(200)的JCPDS强度]/Σ(各面的测定强度/各面的JCPDS强度)}×100。
本发明的钽溅射靶可以用于形成铜布线中的Ta膜或者TaN膜等扩散阻挡层。即使在溅射时的气氛中导入氮气并进行TaN膜的成膜的情况下,通过控制靶的溅射面中的晶体取向,本发明的溅射靶也具有如下优良效果:可以降低钽靶的放电电压,从而容易产生等离子体,并且可以提高等离子体的稳定性,因而在形成具备该Ta膜或TaN膜等扩散阻挡层的铜布线时、以及在制造具备该铜布线的半导体器件时,可以提高制品成品率。
本发明的钽溅射靶通过如下工序制造。示出其一个示例:首先,通常使用4N(99.99%)以上的高纯度钽作为钽原料。将其通过电子束熔炼等进行熔炼,并对其进行铸造而制成锭或坯料。接着,对该锭或坯料进行锻造、再结晶退火。具体来说,例如进行如下过程:锭或坯料-拔长锻造(締め鍛造)-在1100~1400℃的温度下退火-冷锻(一次锻造)-在再结晶温度~1400℃的温度下退火-冷锻(二次锻造)-在再结晶温度~1400℃的温度下退火。
接着,进行冷轧。通过调节该冷轧的条件,可以控制本发明的钽溅射靶的取向率。具体来说,轧辊的辊直径越小越好,优选500mmφ以下。另外,轧制速度尽可能越快越好,优选10m/分钟以上。此外,在仅实施一次轧制的情况下,优选高压下率且大于80%,在重复进行两次以上的轧制的情况下,需要将压下率调节为60%以上、并使靶的最终厚度与轧制一次的情况相同。优选压下率总计大于80%。
接着,进行热处理。通过将冷轧后进行的热处理条件与冷轧条件一起进行调节,可以控制本发明的钽溅射靶的取向率。具体来说,热处理温度越高越好,优选为900~1400℃。热处理温度也与取决于由轧制引入的应变的量,为了得到再结晶组织,需要在900℃以上的温度下进行热处理。另一方面,在超过1400℃的温度下进行热处理在经济上不优选。此后,对靶的表面进行机械加工、抛光加工等精加工,由此精加工成最终制品。
虽然通过上述的制造工序制造钽靶,但本发明中特别重要的是,在靶的溅射面的晶体取向方面,提高(200)面的取向率且降低(222)面的取向率。
与取向的控制大为相关的主要是轧制工序。在轧制工序中,通过控制轧辊的直径、轧制速度、压下率等参数,能够改变在轧制时引入的应变的量、分布,从而能够控制(200)面的取向率和(222)面的取向率。
为了有效地进行面取向率的调节,需要一定程度上反复进行条件设定,但一旦可以调节(200)面的取向率和(222)面的取向率,就能够通过设定该制造条件制造恒定特性的(具有固定水平的特性的)靶。
通常,在制造靶时,有效的是使用轧辊直径500mm以下的轧辊、将轧制速度设为10m/分钟以上、一道次的压下率设为8~12%。然而,只要是可以实现本发明的晶体取向的制造工序,就没有必要一定仅限定于该制造工序。在一系列的加工中,通过锻造、轧制将铸造组织破坏,并且充分进行再结晶这样的条件设定是有效的。
此外,在对经熔炼和铸造的钽锭或坯料进行锻造并施加轧制等加工后,优选进行再结晶退火,使组织微细且均匀化。
实施例
接着,基于实施例对本发明进行说明。如下所示的实施例用于使理解变容易,并不是利用这些实施例限制本发明。即,基于本发明的技术构思的变形及其它实施例当然包含在本发明中。
对纯度99.995%的钽原料进行电子束熔炼,并对其进行铸造而形成直径195mmφ的锭。接着,在室温下对该锭进行拔长锻造以得到直径150mmφ,并在1100~1400℃的温度下对其进行再结晶退火。再次在室温下对其进行锻造以得到厚度100mm、直径150mmφ(一次锻造),并在再结晶温度~1400℃的温度下对其进行再结晶退火。然后,在室温下对其进行锻造以得到厚度70~100mm、直径150~185mmφ(二次锻造),并在再结晶温度~1400℃的温度下对其进行再结晶退火,从而得到了靶材。
(实施例1)
实施例1中,使用轧辊直径400mm的轧辊,在轧制速度10m/分钟、压下率86%的条件下对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在1000℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而形成靶。
通过以上工序,可以得到具有(200)面的取向率为84.3%、(222)面的取向率为9.9%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果良好,放电电压为613.5V,放电电压波动为7.1V,放电异常发生率为3.5%。表1中示出该结果。
通常,计算放电异常发生率时,通过电压达到作为电源上限值的1000V的次数除以总放电次数来进行,在本实施例中也在相同条件下进行。钽膜的成膜在下述的条件下进行(以下的实施例、比较例也是同样的)。
<成膜条件>
电源:直流方式
功率:15kW
极限真空度:5×10-8托
气氛气体组成:Ar
溅射气体压力:5×10-3托
溅射时间:15秒
(实施例2)
实施例2中,使用轧辊直径400mm的轧辊,在轧制速度15m/分钟、压下率88%的条件下对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在900℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而形成靶。
通过以上工序,可以得到具有(200)面的取向率为77.7%、(222)面的取向率为16.2%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果良好,放电电压为614.7V,放电电压波动为12.3V,放电异常发生率为5.8%。表1中示出该结果。
(实施例3)
实施例3中,使用轧辊直径400mm的轧辊,在轧制速度20m/分钟、压下率82%的条件下对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在1100℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而制成靶。通过以上的工序,可以得到具有(200)面的取向率为74.3%、(222)面的取向率为14.8%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果良好,放电电压为603.2V,放电电压波动为18.2V,放电异常发生率为6.0%。表1中示出该结果。
(实施例4)
实施例4中,使用轧辊直径500mm的轧辊,在轧制速度15m/分钟、压下率90%的条件下对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在800℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而制成靶。通过以上的工序,可以得到具有(200)面的取向率为71.4%、(222)面的取向率为20.7%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果良好,放电电压为614.1V,放电电压波动为15.3V,放电异常发生率为7.0%。表1中示出该结果。
(实施例5)
实施例5中,使用轧辊直径500mm的轧辊,在轧制速度20m/分钟、压下率84%的条件下对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在1400℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而制成靶。通过以上工序,可以得到具有(200)面的取向率为70.8%、(222)面的取向率为19.7%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果良好,放电电压为611.2V,放电电压波动为12.2V,放电异常发生率为8.1%。表1中示出该结果。
(比较例1)
比较例1中,使用轧辊直径650mm的轧辊,在轧制速度15m/分钟、压下率80%的条件下对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在800℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而制成靶。通过以上工序,可以得到具有(200)面的取向率为43.6%、(222)面的取向率为39.1%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果差,放电电压为622.5V,放电电压波动为17.0V,放电异常发生率为16.6%。表1中示出该结果。
(比较例2)
比较例2中,使用轧辊直径500mm的轧辊,在轧制速度10m/分钟、压下率78%的条件下对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在800℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而制成靶。通过以上的工序,可以得到具有(200)面的取向率为60.1%、(222)面的取向率为24.0%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果差,放电电压为627.0V,放电电压波动为18.0V,放电异常发生率为20.5%。表1中示出该结果。
(比较例3)
比较例3中,使用轧辊直径500mm的轧辊,在轧制速度15m/分钟、压下率85%的条件下对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在800℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而制成靶。通过以上工序,可以得到具有(200)面的取向率为51.4%、(222)面的取向率为37.3%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果差,放电电压为624.0V,放电电压波动为25.1V,放电异常发生率为26.2%。表1中示出该结果。
(比较例4)
比较例4中,使用轧辊直径650mm的轧辊,在轧制速度20m/分钟、压下率86%的条件对所得到的靶材进行冷轧以得到厚度14mm、直径520mmφ,并在1000℃的温度下对其进行热处理。然后,对表面进行切削、抛光,从而制成靶。通过以上工序,可以得到具有(200)面的取向率为66.2%、(222)面的取向率为31.0%的晶体组织的钽溅射靶。
使用该溅射靶实施溅射,结果差,放电电压为603.4V,放电电压波动为28.4V,放电异常发生率为18.3%。表1中示出该结果。
如以上实施例和比较例所示,位于本申请发明的条件范围内的例子具有降低钽靶的放电电压从而容易产生等离子体,并且提高等离子体的稳定性的效果。即,与比较例相比,具有如下优良效果:可以降低放电电压,可以将放电电压的波动抑制得较低,并且可以降低放电异常发生率。
[表1]
产业实用性
本发明提供钽溅射靶,通过控制靶的溅射面中的晶体取向,具有降低钽靶的放电电压从而容易产生等离子体,并且提高等离子体的稳定性的效果。本发明的钽溅射靶尤其是在形成能够有效地防止由活跃的Cu的扩散而导致的布线周围的污染的包含Ta膜或TaN膜等的扩散阻挡层时有用。
Claims (9)
1.一种钽溅射靶,其特征在于,在钽溅射靶的溅射面中,(200)面的取向率大于70%,且(222)面的取向率为9.9%以上且30%以下,
所述(200)面的取向率由下式计算:
{[通过X射线衍射法得到的(200)的测定强度/(200)的JCPDS强度]/Σ(通过X射线衍射法得到的各面的测定强度/各面的JCPDS强度)}×100%;
所述(222)面的取向率由下式计算:
{[通过X射线衍射法得到的(222)的测定强度/(222)的JCPDS强度]/Σ(通过X射线衍射法得到的各面的测定强度/各面的JCPDS强度)}×100%。
2.如权利要求1所述的钽溅射靶,其特征在于,在钽溅射靶的溅射面中,(200)面的取向率为80%以上,且(222)面的取向率为9.9%以上且20%以下。
3.一种扩散阻挡层用薄膜,其通过使用权利要求1~2中任一项所述的溅射靶而形成。
4.一种半导体器件,其使用了权利要求3所述的扩散阻挡层用薄膜。
5.一种钽溅射靶的制造方法,其特征在于,对经熔炼和铸造的钽锭进行锻造和再结晶退火,然后进行轧制和热处理,从而形成在靶的溅射面中(200)面的取向率大于70%且(222)面的取向率为9.9%以上且30%以下的晶体组织,
所述(200)面的取向率由下式计算:
{[通过X射线衍射法得到的(200)的测定强度/(200)的JCPDS强度]/Σ(通过X射线衍射法得到的各面的测定强度/各面的JCPDS强度)}×100%;
所述(222)面的取向率由下式计算:
{[通过X射线衍射法得到的(222)的测定强度/(222)的JCPDS强度]/Σ(通过X射线衍射法得到的各面的测定强度/各面的JCPDS强度)}×100%。
6.如权利要求5所述的钽溅射靶的制造方法,其特征在于,对经熔炼和铸造的钽锭进行锻造和再结晶退火,然后进行轧制和热处理,从而形成在靶的溅射面中(200)面的取向率为80%以上且(222)面的取向率为9.9%以上且20%以下的晶体组织。
7.如权利要求5~6中任一项所述的钽溅射靶的制造方法,其特征在于,使用轧辊直径500mm以下的轧辊,在轧制速度10m/分钟以上、压下率大于80%的条件下进行冷轧。
8.如权利要求5~6中任一项所述的钽溅射靶的制造方法,其特征在于,在900℃~1400℃的温度下进行热处理。
9.如权利要求5~6中任一项所述的钽溅射靶的制造方法,其特征在于,轧制和热处理后,通过切削、抛光进行表面精加工。
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US20150279637A1 (en) | 2015-10-01 |
JPWO2014097897A1 (ja) | 2017-01-12 |
KR20150046278A (ko) | 2015-04-29 |
EP2878699B1 (en) | 2020-07-15 |
JP5847309B2 (ja) | 2016-01-20 |
EP2878699A1 (en) | 2015-06-03 |
EP2878699A4 (en) | 2016-03-30 |
IL237919B (en) | 2018-02-28 |
TW201439335A (zh) | 2014-10-16 |
KR20170036120A (ko) | 2017-03-31 |
WO2014097897A1 (ja) | 2014-06-26 |
CN105431565A (zh) | 2016-03-23 |
KR101950549B1 (ko) | 2019-02-20 |
TWI580796B (zh) | 2017-05-01 |
US10490393B2 (en) | 2019-11-26 |
SG11201501175TA (en) | 2015-05-28 |
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