SG11201501175TA - Tantalum sputtering target and method for producing same - Google Patents
Tantalum sputtering target and method for producing sameInfo
- Publication number
- SG11201501175TA SG11201501175TA SG11201501175TA SG11201501175TA SG11201501175TA SG 11201501175T A SG11201501175T A SG 11201501175TA SG 11201501175T A SG11201501175T A SG 11201501175TA SG 11201501175T A SG11201501175T A SG 11201501175TA SG 11201501175T A SG11201501175T A SG 11201501175TA
- Authority
- SG
- Singapore
- Prior art keywords
- sputtering target
- producing same
- tantalum sputtering
- tantalum
- producing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
- C01B21/0617—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with vanadium, niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012276883 | 2012-12-19 | ||
PCT/JP2013/082764 WO2014097897A1 (en) | 2012-12-19 | 2013-12-06 | Tantalum sputtering target and method for producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201501175TA true SG11201501175TA (en) | 2015-05-28 |
Family
ID=50978232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201501175TA SG11201501175TA (en) | 2012-12-19 | 2013-12-06 | Tantalum sputtering target and method for producing same |
Country Status (9)
Country | Link |
---|---|
US (1) | US10490393B2 (en) |
EP (1) | EP2878699B1 (en) |
JP (1) | JP5847309B2 (en) |
KR (2) | KR20170036120A (en) |
CN (1) | CN105431565B (en) |
IL (1) | IL237919B (en) |
SG (1) | SG11201501175TA (en) |
TW (1) | TWI580796B (en) |
WO (1) | WO2014097897A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201501370PA (en) | 2012-12-19 | 2015-04-29 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target and method for producing same |
KR20170092706A (en) | 2013-03-04 | 2017-08-11 | 제이엑스금속주식회사 | Tantalum sputtering target and production method therefor |
US10431439B2 (en) | 2013-10-01 | 2019-10-01 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
CN107532287B (en) | 2015-05-22 | 2019-11-05 | 捷客斯金属株式会社 | Tantalum spattering target and its manufacturing method |
KR20170091738A (en) | 2015-05-22 | 2017-08-09 | 제이엑스금속주식회사 | Tantalum sputtering target, and production method therefor |
TW201738395A (en) * | 2015-11-06 | 2017-11-01 | 塔沙Smd公司 | Method of making a tantalum sputtering target with increased deposition rate |
JP7053411B2 (en) * | 2018-08-31 | 2022-04-12 | 株式会社アイシン | Manufacturing method of metal parts |
CN109338316B (en) * | 2018-09-12 | 2020-04-28 | 中南大学 | Ultra-pure tantalum with controllable structure and texture and preparation method and application thereof |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1180942A (en) * | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Ta sputtering target, its production and assembled body |
US6348139B1 (en) * | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
JP4817536B2 (en) | 2001-06-06 | 2011-11-16 | 株式会社東芝 | Sputter target |
US7081148B2 (en) | 2001-09-18 | 2006-07-25 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
JP4883546B2 (en) | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | Method for manufacturing tantalum sputtering target |
JP4263900B2 (en) | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Ta sputtering target and manufacturing method thereof |
US6794753B2 (en) * | 2002-12-27 | 2004-09-21 | Lexmark International, Inc. | Diffusion barrier and method therefor |
JP4672967B2 (en) | 2003-01-10 | 2011-04-20 | Jx日鉱日石金属株式会社 | Target manufacturing method |
EP1609881B1 (en) | 2003-04-01 | 2011-04-20 | Nippon Mining & Metals Co., Ltd. | Method of manufacturing a tantalum sputtering target |
EP1681368B1 (en) * | 2003-11-06 | 2021-06-30 | JX Nippon Mining & Metals Corporation | Method to produce a tantalum sputtering target |
KR100559395B1 (en) | 2003-11-10 | 2006-03-10 | 현대자동차주식회사 | Micro boring bearing |
US7686926B2 (en) | 2004-05-26 | 2010-03-30 | Applied Materials, Inc. | Multi-step process for forming a metal barrier in a sputter reactor |
US7998287B2 (en) | 2005-02-10 | 2011-08-16 | Cabot Corporation | Tantalum sputtering target and method of fabrication |
US8177947B2 (en) | 2005-04-28 | 2012-05-15 | Jx Nippon Mining & Metals Corporation | Sputtering target |
EP1942204B1 (en) | 2005-10-04 | 2012-04-25 | JX Nippon Mining & Metals Corporation | Sputtering target |
KR101100288B1 (en) | 2005-12-02 | 2011-12-28 | 가부시키가이샤 알박 | Method of forming ?? film |
JP4714123B2 (en) | 2006-10-30 | 2011-06-29 | 株式会社東芝 | Method for producing high purity Ta material for sputtering target |
KR20100116213A (en) * | 2008-02-29 | 2010-10-29 | 신닛테츠 마테리알즈 가부시키가이샤 | Metallic sputtering target material |
TWI458799B (en) | 2008-12-02 | 2014-11-01 | Univ Arizona | Method of preparing a flexible substrate assembly and flexible substrate assembly therefrom |
SG173141A1 (en) | 2009-05-22 | 2011-08-29 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
SG176601A1 (en) | 2009-05-29 | 2012-01-30 | Univ Arizona | Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof |
EP2465967A4 (en) * | 2009-08-11 | 2014-04-30 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
SG184778A1 (en) | 2009-08-11 | 2012-10-30 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
KR101273021B1 (en) | 2009-08-12 | 2013-06-10 | 가부시키가이샤 아루박 | Sputtering target and method for manufacturing a sputtering target |
KR20150038585A (en) * | 2009-11-17 | 2015-04-08 | 가부시끼가이샤 도시바 | Tantalum sputtering target, method for manufacturing tantalum sputtering target, and method for manufacturing semiconductor device |
KR101051945B1 (en) | 2009-12-02 | 2011-07-27 | 황도희 | How to prepare instant seasoned ribs sauce |
WO2012020662A1 (en) | 2010-08-09 | 2012-02-16 | Jx日鉱日石金属株式会社 | Tantalum spattering target |
US9085819B2 (en) | 2010-08-09 | 2015-07-21 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
EP2728038B1 (en) | 2011-11-30 | 2016-11-02 | JX Nippon Mining & Metals Corporation | Tantalum sputtering target and method for manufacturing same |
WO2013141231A1 (en) | 2012-03-21 | 2013-09-26 | Jx日鉱日石金属株式会社 | Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target |
SG11201501370PA (en) | 2012-12-19 | 2015-04-29 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target and method for producing same |
KR20170092706A (en) | 2013-03-04 | 2017-08-11 | 제이엑스금속주식회사 | Tantalum sputtering target and production method therefor |
US10431439B2 (en) | 2013-10-01 | 2019-10-01 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
KR102112937B1 (en) | 2014-03-27 | 2020-05-19 | 제이엑스금속주식회사 | Tantalum sputtering target and production method therefor |
-
2013
- 2013-12-06 US US14/433,948 patent/US10490393B2/en active Active
- 2013-12-06 KR KR1020177007784A patent/KR20170036120A/en not_active Application Discontinuation
- 2013-12-06 CN CN201380053775.9A patent/CN105431565B/en active Active
- 2013-12-06 KR KR1020157007541A patent/KR101950549B1/en active IP Right Grant
- 2013-12-06 WO PCT/JP2013/082764 patent/WO2014097897A1/en active Application Filing
- 2013-12-06 SG SG11201501175TA patent/SG11201501175TA/en unknown
- 2013-12-06 JP JP2014524215A patent/JP5847309B2/en active Active
- 2013-12-06 EP EP13866236.6A patent/EP2878699B1/en active Active
- 2013-12-11 TW TW102145544A patent/TWI580796B/en active
-
2015
- 2015-03-24 IL IL237919A patent/IL237919B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20150279637A1 (en) | 2015-10-01 |
KR20170036120A (en) | 2017-03-31 |
EP2878699B1 (en) | 2020-07-15 |
TW201439335A (en) | 2014-10-16 |
CN105431565B (en) | 2018-06-05 |
CN105431565A (en) | 2016-03-23 |
EP2878699A4 (en) | 2016-03-30 |
TWI580796B (en) | 2017-05-01 |
EP2878699A1 (en) | 2015-06-03 |
JPWO2014097897A1 (en) | 2017-01-12 |
KR101950549B1 (en) | 2019-02-20 |
WO2014097897A1 (en) | 2014-06-26 |
JP5847309B2 (en) | 2016-01-20 |
KR20150046278A (en) | 2015-04-29 |
US10490393B2 (en) | 2019-11-26 |
IL237919B (en) | 2018-02-28 |
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