SG11201600781YA - Tantalum sputtering target - Google Patents
Tantalum sputtering targetInfo
- Publication number
- SG11201600781YA SG11201600781YA SG11201600781YA SG11201600781YA SG11201600781YA SG 11201600781Y A SG11201600781Y A SG 11201600781YA SG 11201600781Y A SG11201600781Y A SG 11201600781YA SG 11201600781Y A SG11201600781Y A SG 11201600781YA SG 11201600781Y A SG11201600781Y A SG 11201600781YA
- Authority
- SG
- Singapore
- Prior art keywords
- sputtering target
- tantalum sputtering
- tantalum
- target
- sputtering
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013206580 | 2013-10-01 | ||
| PCT/JP2014/075548 WO2015050041A1 (en) | 2013-10-01 | 2014-09-26 | Tantalum sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201600781YA true SG11201600781YA (en) | 2016-03-30 |
Family
ID=52778632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201600781YA SG11201600781YA (en) | 2013-10-01 | 2014-09-26 | Tantalum sputtering target |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10431439B2 (en) |
| JP (1) | JP5969138B2 (en) |
| KR (2) | KR20160052664A (en) |
| CN (1) | CN105593399B (en) |
| SG (1) | SG11201600781YA (en) |
| TW (1) | TWI636148B (en) |
| WO (1) | WO2015050041A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5847309B2 (en) | 2012-12-19 | 2016-01-20 | Jx日鉱日石金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
| CN104755651B (en) | 2012-12-19 | 2017-05-24 | 吉坤日矿日石金属株式会社 | Tantalum sputtering target and method for producing same |
| US9859104B2 (en) | 2013-03-04 | 2018-01-02 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target and production method therefor |
| CN107614742B (en) * | 2015-05-21 | 2020-08-07 | 捷客斯金属株式会社 | Sputtering target |
| CN107532287B (en) | 2015-05-22 | 2019-11-05 | 捷客斯金属株式会社 | Tantalum spattering target and its manufacturing method |
| WO2016190160A1 (en) | 2015-05-22 | 2016-12-01 | Ｊｘ金属株式会社 | Tantalum sputtering target, and production method therefor |
| EP3406756A4 (en) * | 2016-03-09 | 2019-09-18 | JX Nippon Mining & Metals Corporation | Sputtering target capable of stabilizing ignition |
| CN107983793B (en) * | 2017-11-30 | 2019-11-01 | 株洲硬质合金集团有限公司 | The preparation method of 2.5 tungsten alloy plate of tantalum |
| CN111254306B (en) * | 2020-01-20 | 2021-04-16 | 郑州大学 | Preparation method of molybdenum-niobium alloy with low oxygen content |
| US11725270B2 (en) * | 2020-01-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target design and semiconductor devices formed using the same |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1180942A (en) | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Ta sputtering target, its production and assembled body |
| US6348139B1 (en) | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
| JP2000212678A (en) * | 1999-01-21 | 2000-08-02 | Japan Energy Corp | High purity tantalum for thin film formation and its production |
| JP2001020065A (en) | 1999-07-07 | 2001-01-23 | Hitachi Metals Ltd | Target for sputtering, its production and high melting point metal powder material |
| US6331233B1 (en) | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
| US6682636B2 (en) * | 2000-08-18 | 2004-01-27 | Honeywell International Inc. | Physical vapor deposition targets and methods of formation |
| JP4825345B2 (en) | 2000-08-24 | 2011-11-30 | 株式会社東芝 | Sputtering target, barrier layer using the same, and method of forming electronic device |
| CN1257998C (en) * | 2001-01-11 | 2006-05-31 | 卡伯特公司 | Tantalum and niobium billets and methods of producing the same |
| US7081148B2 (en) | 2001-09-18 | 2006-07-25 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
| JP4883546B2 (en) | 2002-09-20 | 2012-02-22 | Ｊｘ日鉱日石金属株式会社 | Method for manufacturing tantalum sputtering target |
| JP4263900B2 (en) | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Ta sputtering target and manufacturing method thereof |
| KR100698745B1 (en) | 2003-04-01 | 2007-03-23 | 닛코킨조쿠 가부시키가이샤 | Tantalum spattering target and method of manufacturing the same |
| JP4593475B2 (en) | 2003-11-06 | 2010-12-08 | Ｊｘ日鉱日石金属株式会社 | Tantalum sputtering target |
| US7998287B2 (en) | 2005-02-10 | 2011-08-16 | Cabot Corporation | Tantalum sputtering target and method of fabrication |
| EP1876258A4 (en) | 2005-04-28 | 2008-08-13 | Nippon Mining Co | Sputtering target |
| WO2007040014A1 (en) | 2005-10-04 | 2007-04-12 | Nippon Mining & Metals Co., Ltd. | Sputtering target |
| US10266924B2 (en) | 2009-05-22 | 2019-04-23 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
| CN102460646A (en) | 2009-05-29 | 2012-05-16 | 代表亚利桑那大学的亚利桑那校董会 | Method of providing flexible semiconductor device at high temperatures and flexible semiconductor device thereof |
| JP5290393B2 (en) * | 2009-08-11 | 2013-09-18 | Ｊｘ日鉱日石金属株式会社 | Tantalum sputtering target |
| SG184778A1 (en) * | 2009-08-11 | 2012-10-30 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
| DE112010003274T5 (en) | 2009-08-12 | 2012-12-27 | Ulvac, Inc. | Method for producing a sputtering target and sputtering target |
| KR20150039219A (en) | 2009-11-17 | 2015-04-09 | 가부시끼가이샤 도시바 | Tantalum sputtering target, method for manufacturing tantalum sputtering target, and method for manufacturing semiconductor device |
| CN103052733B (en) | 2010-08-09 | 2015-08-12 | 吉坤日矿日石金属株式会社 | Tantalum sputtering target |
| EP2604719B1 (en) * | 2010-08-09 | 2020-11-11 | JX Nippon Mining & Metals Corporation | Tantalum spattering target |
| JP2013082993A (en) * | 2011-09-30 | 2013-05-09 | Tokyo Electron Ltd | Magnetron sputtering apparatus and method |
| KR20140054203A (en) | 2011-11-30 | 2014-05-08 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Tantalum sputtering target and method for manufacturing same |
| KR101690394B1 (en) | 2012-03-21 | 2016-12-27 | 제이엑스금속주식회사 | Method for manufacturing tantalum sputtering target |
| CN104755651B (en) | 2012-12-19 | 2017-05-24 | 吉坤日矿日石金属株式会社 | Tantalum sputtering target and method for producing same |
| JP5847309B2 (en) | 2012-12-19 | 2016-01-20 | Jx日鉱日石金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
| US9859104B2 (en) | 2013-03-04 | 2018-01-02 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target and production method therefor |
| JP6009683B2 (en) | 2014-03-27 | 2016-10-19 | Ｊｘ金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
-
2014
- 2014-09-26 KR KR1020167008777A patent/KR20160052664A/en not_active Application Discontinuation
- 2014-09-26 JP JP2015540465A patent/JP5969138B2/en active Active
- 2014-09-26 SG SG11201600781YA patent/SG11201600781YA/en unknown
- 2014-09-26 WO PCT/JP2014/075548 patent/WO2015050041A1/en active Application Filing
- 2014-09-26 KR KR1020177035841A patent/KR20170141280A/en not_active Application Discontinuation
- 2014-09-26 US US14/917,519 patent/US10431439B2/en active Active
- 2014-09-26 CN CN201480054575.XA patent/CN105593399B/en active Active
- 2014-09-30 TW TW103133914A patent/TWI636148B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5969138B2 (en) | 2016-08-17 |
| WO2015050041A1 (en) | 2015-04-09 |
| TWI636148B (en) | 2018-09-21 |
| TW201522687A (en) | 2015-06-16 |
| JPWO2015050041A1 (en) | 2017-03-09 |
| CN105593399A (en) | 2016-05-18 |
| US10431439B2 (en) | 2019-10-01 |
| US20160217983A1 (en) | 2016-07-28 |
| KR20170141280A (en) | 2017-12-22 |
| KR20160052664A (en) | 2016-05-12 |
| CN105593399B (en) | 2018-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL285412B (en) | A sputtering target and a sputtering chamber | |
| HK1218765A1 (en) | Multiaptamer target detection | |
| EP3072070A4 (en) | Callpath finder | |
| EP3036494A4 (en) | Firearm | |
| GB201314307D0 (en) | RF Engery Harvester | |
| SG11201600781YA (en) | Tantalum sputtering target | |
| SG11201505306PA (en) | Tantalum sputtering target and production method therefor | |
| IL246811A0 (en) | Sputtering target | |
| SG11201407011UA (en) | Sputtering target | |
| EP2853617A4 (en) | Sputtering target | |
| EP3024661A4 (en) | Calibration target | |
| SG11201700667VA (en) | Sputtering target | |
| HK1214403A1 (en) | Sputtering target having increased power compatibility | |
| IL241969B (en) | Sputtering target-backing plate assembly | |
| SG11201501365WA (en) | Sputtering target | |
| EP2980269A4 (en) | Sputtering device | |
| GB2516114B (en) | Tracking | |
| SG11201606737UA (en) | Sputtering target | |
| SG11201506140WA (en) | Sputtering target | |
| GB201510085D0 (en) | Sputtering device | |
| HK1219515A1 (en) | Target preparation | |
| SG11201604730PA (en) | Magnetic sputtering target | |
| GB201314379D0 (en) | Novel target | |
| GB201314389D0 (en) | Novel target | |
| GB201322253D0 (en) | Human targets ll |