SG11201501370PA - Tantalum sputtering target and method for producing same - Google Patents
Tantalum sputtering target and method for producing sameInfo
- Publication number
- SG11201501370PA SG11201501370PA SG11201501370PA SG11201501370PA SG11201501370PA SG 11201501370P A SG11201501370P A SG 11201501370PA SG 11201501370P A SG11201501370P A SG 11201501370PA SG 11201501370P A SG11201501370P A SG 11201501370PA SG 11201501370P A SG11201501370P A SG 11201501370PA
- Authority
- SG
- Singapore
- Prior art keywords
- sputtering target
- producing same
- tantalum sputtering
- tantalum
- producing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
- C01B21/0617—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with vanadium, niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012276884 | 2012-12-19 | ||
| PCT/JP2013/082773 WO2014097900A1 (en) | 2012-12-19 | 2013-12-06 | Tantalum sputtering target and method for producing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201501370PA true SG11201501370PA (en) | 2015-04-29 |
Family
ID=50978235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201501370PA SG11201501370PA (en) | 2012-12-19 | 2013-12-06 | Tantalum sputtering target and method for producing same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10407766B2 (en) |
| EP (1) | EP2878700B1 (en) |
| JP (1) | JP5829757B2 (en) |
| KR (2) | KR101927574B1 (en) |
| CN (1) | CN104755651B (en) |
| SG (1) | SG11201501370PA (en) |
| TW (1) | TWI579385B (en) |
| WO (1) | WO2014097900A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5847309B2 (en) | 2012-12-19 | 2016-01-20 | Jx日鉱日石金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
| JP5905600B2 (en) | 2013-03-04 | 2016-04-20 | Ｊｘ金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
| US10431439B2 (en) | 2013-10-01 | 2019-10-01 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
| JP6293928B2 (en) | 2015-05-22 | 2018-03-14 | Ｊｘ金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
| SG11201704463VA (en) | 2015-05-22 | 2017-07-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target, and production method therefor |
| CN113046705B (en) * | 2021-03-16 | 2022-08-16 | 宁波江丰电子材料股份有限公司 | Copper target material and preparation method and application thereof |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1180942A (en) | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Ta sputtering target, its production and assembled body |
| US6348139B1 (en) | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
| JP4817536B2 (en) | 2001-06-06 | 2011-11-16 | 株式会社東芝 | Sputter target |
| US7081148B2 (en) * | 2001-09-18 | 2006-07-25 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
| JP4883546B2 (en) * | 2002-09-20 | 2012-02-22 | Ｊｘ日鉱日石金属株式会社 | Method for manufacturing tantalum sputtering target |
| JP4263900B2 (en) | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Ta sputtering target and manufacturing method thereof |
| US6794753B2 (en) | 2002-12-27 | 2004-09-21 | Lexmark International, Inc. | Diffusion barrier and method therefor |
| JP4672967B2 (en) * | 2003-01-10 | 2011-04-20 | Ｊｘ日鉱日石金属株式会社 | Target manufacturing method |
| DE602004032323D1 (en) | 2003-04-01 | 2011-06-01 | Nippon Mining Co | Method of making the tantalum sputtering target |
| WO2005045090A1 (en) | 2003-11-06 | 2005-05-19 | Nikko Materials Co., Ltd. | Tantalum sputtering target |
| KR100559395B1 (en) | 2003-11-10 | 2006-03-10 | 현대자동차주식회사 | Micro boring bearing |
| US7998287B2 (en) | 2005-02-10 | 2011-08-16 | Cabot Corporation | Tantalum sputtering target and method of fabrication |
| EP1876258A4 (en) | 2005-04-28 | 2008-08-13 | Nippon Mining Co | Sputtering target |
| EP1942204B1 (en) | 2005-10-04 | 2012-04-25 | JX Nippon Mining & Metals Corporation | Sputtering target |
| US20090078580A1 (en) | 2005-12-02 | 2009-03-26 | Ulvac, Inc. | Method for Forming Cu Film |
| JP4714123B2 (en) | 2006-10-30 | 2011-06-29 | 株式会社東芝 | Method for producing high purity Ta material for sputtering target |
| JPWO2009107763A1 (en) * | 2008-02-29 | 2011-07-07 | 新日鉄マテリアルズ株式会社 | Metal-based sputtering target material |
| EP2366270A4 (en) | 2008-12-02 | 2013-04-10 | Univ Arizona | Method of preparing a flexible substrate assembly and flexible substrate assembly therefrom |
| CN102356179B (en) | 2009-05-22 | 2013-10-30 | 吉坤日矿日石金属株式会社 | Tantalum sputtering target |
| EP2436029A4 (en) | 2009-05-29 | 2013-04-10 | Univ Arizona | Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof |
| US9845528B2 (en) | 2009-08-11 | 2017-12-19 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
| CN102471874B (en) | 2009-08-11 | 2014-09-17 | 吉坤日矿日石金属株式会社 | Tantalum sputtering target |
| US9017493B2 (en) | 2009-08-12 | 2015-04-28 | Ulvac, Inc. | Method of manufacturing a sputtering target and sputtering target |
| KR20120082943A (en) * | 2009-11-17 | 2012-07-24 | 도시바 마테리알 가부시키가이샤 | Tantalum sputtering target, method for manufacturing tantalum sputtering target, and method for manufacturing semiconductor device |
| KR101051945B1 (en) | 2009-12-02 | 2011-07-27 | 황도희 | How to prepare instant seasoned ribs sauce |
| WO2012020662A1 (en) | 2010-08-09 | 2012-02-16 | Jx日鉱日石金属株式会社 | Tantalum spattering target |
| KR101944580B1 (en) * | 2010-08-09 | 2019-01-31 | 제이엑스금속주식회사 | Tantalum spattering target |
| JP6124219B2 (en) | 2011-11-30 | 2017-05-10 | Ｊｘ金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
| CN104204282B (en) | 2012-03-21 | 2017-05-24 | 吉坤日矿日石金属株式会社 | Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target |
| JP5847309B2 (en) | 2012-12-19 | 2016-01-20 | Jx日鉱日石金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
| JP5905600B2 (en) | 2013-03-04 | 2016-04-20 | Ｊｘ金属株式会社 | Tantalum sputtering target and manufacturing method thereof |
| US10431439B2 (en) | 2013-10-01 | 2019-10-01 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
| KR20160027122A (en) | 2014-03-27 | 2016-03-09 | 제이엑스 킨조쿠 가부시키가이샤 | Tantalum sputtering target and production method therefor |
-
2013
- 2013-12-06 WO PCT/JP2013/082773 patent/WO2014097900A1/en active Application Filing
- 2013-12-06 US US14/434,159 patent/US10407766B2/en active Active
- 2013-12-06 KR KR1020157008891A patent/KR101927574B1/en active IP Right Grant
- 2013-12-06 KR KR1020177007785A patent/KR20170036121A/en not_active Application Discontinuation
- 2013-12-06 SG SG11201501370PA patent/SG11201501370PA/en unknown
- 2013-12-06 CN CN201380056788.1A patent/CN104755651B/en active Active
- 2013-12-06 EP EP13866455.2A patent/EP2878700B1/en active Active
- 2013-12-06 JP JP2014534288A patent/JP5829757B2/en active Active
- 2013-12-11 TW TW102145543A patent/TWI579385B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2878700B1 (en) | 2021-01-20 |
| CN104755651A (en) | 2015-07-01 |
| KR20150053795A (en) | 2015-05-18 |
| CN104755651B (en) | 2017-05-24 |
| US20150329959A1 (en) | 2015-11-19 |
| TWI579385B (en) | 2017-04-21 |
| KR20170036121A (en) | 2017-03-31 |
| US10407766B2 (en) | 2019-09-10 |
| KR101927574B1 (en) | 2018-12-10 |
| WO2014097900A1 (en) | 2014-06-26 |
| EP2878700A1 (en) | 2015-06-03 |
| JPWO2014097900A1 (en) | 2017-01-12 |
| JP5829757B2 (en) | 2015-12-09 |
| EP2878700A4 (en) | 2015-12-23 |
| TW201439334A (en) | 2014-10-16 |
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