DE68912400T2 - Plasmaätzvorrichtung. - Google Patents

Plasmaätzvorrichtung.

Info

Publication number
DE68912400T2
DE68912400T2 DE68912400T DE68912400T DE68912400T2 DE 68912400 T2 DE68912400 T2 DE 68912400T2 DE 68912400 T DE68912400 T DE 68912400T DE 68912400 T DE68912400 T DE 68912400T DE 68912400 T2 DE68912400 T2 DE 68912400T2
Authority
DE
Germany
Prior art keywords
plasma etching
etching device
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68912400T
Other languages
English (en)
Other versions
DE68912400D1 (de
Inventor
Sato Masaaki
Arita Yoshinobu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1084544A external-priority patent/JP2566648B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE68912400D1 publication Critical patent/DE68912400D1/de
Application granted granted Critical
Publication of DE68912400T2 publication Critical patent/DE68912400T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32587—Triode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
DE68912400T 1988-05-23 1989-05-18 Plasmaätzvorrichtung. Expired - Lifetime DE68912400T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12389988 1988-05-23
JP28757088 1988-11-16
JP29251788 1988-11-21
JP1084544A JP2566648B2 (ja) 1988-05-23 1989-04-03 プラズマエッチング装置

Publications (2)

Publication Number Publication Date
DE68912400D1 DE68912400D1 (de) 1994-03-03
DE68912400T2 true DE68912400T2 (de) 1994-08-18

Family

ID=27466990

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68912400T Expired - Lifetime DE68912400T2 (de) 1988-05-23 1989-05-18 Plasmaätzvorrichtung.

Country Status (3)

Country Link
US (1) US4963242A (de)
EP (1) EP0343500B1 (de)
DE (1) DE68912400T2 (de)

Families Citing this family (53)

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US5225024A (en) * 1989-05-08 1993-07-06 Applied Materials, Inc. Magnetically enhanced plasma reactor system for semiconductor processing
EP0396919A3 (de) * 1989-05-08 1991-07-10 Applied Materials, Inc. Plasma-Reaktor und Halbleiterbearbeitungsverfahren
US5421891A (en) * 1989-06-13 1995-06-06 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5429070A (en) * 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
DE69032952T2 (de) * 1989-11-15 1999-09-30 Kokusai Electric Co Ltd Trocken-Behandlungsvorrichtung
KR0155566B1 (ko) * 1990-07-20 1998-11-16 이노우에 아끼라 플라즈마 처리장치
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US6488807B1 (en) * 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5391281A (en) * 1993-04-09 1995-02-21 Materials Research Corp. Plasma shaping plug for control of sputter etching
US5674321A (en) * 1995-04-28 1997-10-07 Applied Materials, Inc. Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor
JP3585591B2 (ja) * 1995-07-29 2004-11-04 株式会社半導体エネルギー研究所 エッチング装置及びエッチング方法
US6500314B1 (en) 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6048435A (en) * 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
JP3343200B2 (ja) * 1997-05-20 2002-11-11 東京エレクトロン株式会社 プラズマ処理装置
US6110395A (en) * 1997-08-26 2000-08-29 Trikon Technologies, Inc. Method and structure for controlling plasma uniformity
US6645353B2 (en) * 1997-12-31 2003-11-11 Intel Corporation Approach to optimizing an ILD argon sputter process
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6894245B2 (en) 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6900596B2 (en) 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6853141B2 (en) * 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4009087B2 (ja) 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
US7033514B2 (en) * 2001-08-27 2006-04-25 Micron Technology, Inc. Method and apparatus for micromachining using a magnetic field and plasma etching
CA2359597C (en) * 2001-10-23 2003-10-21 Roland Kenny Beverage can holder
WO2003054912A1 (en) * 2001-12-20 2003-07-03 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
JP3823069B2 (ja) * 2002-06-12 2006-09-20 株式会社アルバック 磁気中性線放電プラズマ処理装置
US20030230385A1 (en) * 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7458335B1 (en) * 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
US8158016B2 (en) * 2004-02-04 2012-04-17 Veeco Instruments, Inc. Methods of operating an electromagnet of an ion source
US7557362B2 (en) * 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US7422654B2 (en) * 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7901952B2 (en) 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7795153B2 (en) 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US20050181052A1 (en) * 2004-02-17 2005-08-18 Patel Satishkumar A. Lansoprazole microtablets
US7527713B2 (en) * 2004-05-26 2009-05-05 Applied Materials, Inc. Variable quadruple electromagnet array in plasma processing
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
KR100683416B1 (ko) * 2004-11-25 2007-02-20 피에스케이 주식회사 플라즈마 챔버 시스템 및 이를 이용하여 저유전막을 갖는기판 상에 형성된 포토레지스트 패턴을 애싱하는 방법
JP2008060429A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 基板のプラズマ処理装置及びプラズマ処理方法
US7758718B1 (en) * 2006-12-29 2010-07-20 Lam Research Corporation Reduced electric field arrangement for managing plasma confinement
JP4728405B2 (ja) * 2007-07-04 2011-07-20 キヤノンアネルバ株式会社 表面処理装置
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
KR20140095825A (ko) * 2013-01-25 2014-08-04 삼성전자주식회사 플라즈마 설비
CN112466734A (zh) * 2019-09-09 2021-03-09 东京毅力科创株式会社 等离子体处理装置及处理基板的方法
JP2023043720A (ja) * 2021-09-16 2023-03-29 キオクシア株式会社 基板処理装置、及び半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0054201B1 (de) * 1980-12-11 1986-11-05 Kabushiki Kaisha Toshiba Apparat zum Trockenätzen und Verfahren
JPS57159026A (en) * 1981-03-27 1982-10-01 Toshiba Corp Dry etching method
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
US4521286A (en) * 1983-03-09 1985-06-04 Unisearch Limited Hollow cathode sputter etcher
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4572759A (en) * 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
JPS6317530A (ja) * 1986-07-09 1988-01-25 Anelva Corp 磁気増強型リアクテイブイオンエツチング装置

Also Published As

Publication number Publication date
EP0343500A1 (de) 1989-11-29
EP0343500B1 (de) 1994-01-19
DE68912400D1 (de) 1994-03-03
US4963242A (en) 1990-10-16

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Legal Events

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