DE3575047D1 - Mikrowellen-plasma-aetzvorrichtung. - Google Patents

Mikrowellen-plasma-aetzvorrichtung.

Info

Publication number
DE3575047D1
DE3575047D1 DE8585305217T DE3575047T DE3575047D1 DE 3575047 D1 DE3575047 D1 DE 3575047D1 DE 8585305217 T DE8585305217 T DE 8585305217T DE 3575047 T DE3575047 T DE 3575047T DE 3575047 D1 DE3575047 D1 DE 3575047D1
Authority
DE
Germany
Prior art keywords
plasma etching
microwave plasma
etching device
microwave
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585305217T
Other languages
English (en)
Inventor
Shuzo C O Fujitsu Lim Fujimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3575047D1 publication Critical patent/DE3575047D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Gerontology & Geriatric Medicine (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE8585305217T 1984-07-23 1985-07-23 Mikrowellen-plasma-aetzvorrichtung. Expired - Fee Related DE3575047D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15236384A JPS6130036A (ja) 1984-07-23 1984-07-23 マイクロ波プラズマ処理装置

Publications (1)

Publication Number Publication Date
DE3575047D1 true DE3575047D1 (de) 1990-02-01

Family

ID=15538893

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585305217T Expired - Fee Related DE3575047D1 (de) 1984-07-23 1985-07-23 Mikrowellen-plasma-aetzvorrichtung.

Country Status (5)

Country Link
US (1) US4609428A (de)
EP (1) EP0171949B1 (de)
JP (1) JPS6130036A (de)
KR (1) KR900001685B1 (de)
DE (1) DE3575047D1 (de)

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US5044314A (en) * 1986-10-15 1991-09-03 Advantage Production Technology, Inc. Semiconductor wafer processing apparatus
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
JPH0620048B2 (ja) * 1987-01-30 1994-03-16 富士電機株式会社 乾式薄膜加工装置
US4985112A (en) * 1987-02-09 1991-01-15 International Business Machines Corporation Enhanced plasma etching
US4930442A (en) * 1987-03-27 1990-06-05 Canon Kabushiki Kaisha Microwave plasma CVD apparatus having an improved microwave transmissive window
KR880013424A (ko) 1987-04-08 1988-11-30 미타 가츠시게 플라즈머 장치
JPH0672306B2 (ja) 1987-04-27 1994-09-14 株式会社半導体エネルギー研究所 プラズマ処理装置およびプラズマ処理方法
EP0290036B1 (de) * 1987-05-08 1995-04-12 Hitachi, Ltd. Plasmabehandlungsvorrichtung
KR920002864B1 (ko) * 1987-07-20 1992-04-06 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리방법 및 그 장치
US4836902A (en) * 1987-10-09 1989-06-06 Northern Telecom Limited Method and apparatus for removing coating from substrate
US4859303A (en) * 1987-10-09 1989-08-22 Northern Telecom Limited Method and apparatus for removing coating from substrate
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
US4973381A (en) * 1987-11-30 1990-11-27 Texas Instruments Incorporated Method and apparatus for etching surface with excited gas
US5115167A (en) * 1988-04-05 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Plasma processor
US5146138A (en) * 1988-04-05 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Plasma processor
JP2618001B2 (ja) * 1988-07-13 1997-06-11 三菱電機株式会社 プラズマ反応装置
US4952273A (en) * 1988-09-21 1990-08-28 Microscience, Inc. Plasma generation in electron cyclotron resonance
WO1990004045A1 (en) * 1988-10-14 1990-04-19 Advantage Production Technology Inc. Semiconductor wafer processing method and apparatus
JP2790878B2 (ja) * 1988-11-16 1998-08-27 治久 木下 ドライプロセス装置
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5236537A (en) * 1989-04-07 1993-08-17 Seiko Epson Corporation Plasma etching apparatus
US5133830A (en) * 1989-04-07 1992-07-28 Seiko Epson Corporation Method of pretreatment and anisotropic dry etching of thin film semiconductors
EP0395415B1 (de) * 1989-04-27 1995-03-15 Fujitsu Limited Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas
US5225024A (en) * 1989-05-08 1993-07-06 Applied Materials, Inc. Magnetically enhanced plasma reactor system for semiconductor processing
EP0396919A3 (de) * 1989-05-08 1991-07-10 Applied Materials, Inc. Plasma-Reaktor und Halbleiterbearbeitungsverfahren
US5194119A (en) * 1989-05-15 1993-03-16 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5061838A (en) * 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
JPH0775226B2 (ja) * 1990-04-10 1995-08-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ処理方法及び装置
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
GB2256084A (en) * 1991-05-13 1992-11-25 Integrated Plasma Ltd Plasma deposition and etching of substrates.
DE4119362A1 (de) * 1991-06-12 1992-12-17 Leybold Ag Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren
US5279669A (en) * 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5282899A (en) * 1992-06-10 1994-02-01 Ruxam, Inc. Apparatus for the production of a dissociated atomic particle flow
FR2705584B1 (fr) * 1993-05-26 1995-06-30 Commissariat Energie Atomique Dispositif de séparation isotopique par résonance cyclotronique ionique.
US5783100A (en) * 1994-03-16 1998-07-21 Micron Display Technology, Inc. Method of high density plasma etching for semiconductor manufacture
US6258287B1 (en) * 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
US7102737B2 (en) * 1997-11-04 2006-09-05 Micron Technology, Inc. Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light
US5969805A (en) 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
US6704107B1 (en) 1997-11-04 2004-03-09 Micron Technology, Inc. Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light
JPH11330262A (ja) * 1998-05-15 1999-11-30 Mitsubishi Electric Corp 半導体装置の製造方法
US6780305B2 (en) 2001-02-20 2004-08-24 Fuji Photo Film Co., Ltd. Method for producing support for planographic printing plate, support for planographic printing plate, and planographic printing plate precursor
US6794272B2 (en) * 2001-10-26 2004-09-21 Ifire Technologies, Inc. Wafer thinning using magnetic mirror plasma
US6876154B2 (en) * 2002-04-24 2005-04-05 Trikon Holdings Limited Plasma processing apparatus
GB0209291D0 (en) * 2002-04-24 2002-06-05 Trikon Technologies Ltd Plasma processing apparatus
US20040110388A1 (en) * 2002-12-06 2004-06-10 International Business Machines Corporation Apparatus and method for shielding a wafer from charged particles during plasma etching
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
EP2251454B1 (de) 2009-05-13 2014-07-23 SiO2 Medical Products, Inc. Entgasungsverfahren zur Prüfung einer beschichteten Oberfläche
US8017198B2 (en) * 2009-04-24 2011-09-13 Ovshinsky Innovation Llc Thin film deposition via charged particle-depleted plasma achieved by magnetic confinement
US20100290575A1 (en) * 2009-05-15 2010-11-18 Rosenthal Glenn B Particle beam isotope generator apparatus, system and method
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US9024273B2 (en) * 2010-04-20 2015-05-05 Varian Semiconductor Equipment Associates, Inc. Method to generate molecular ions from ions with a smaller atomic mass
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN103086607B (zh) * 2011-10-28 2015-08-26 清华大学 光栅的制备方法
JP6095678B2 (ja) 2011-11-11 2017-03-15 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 薬剤パッケージ用の不動態化、ｐＨ保護又は滑性皮膜、被覆プロセス及び装置
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
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CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
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US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
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JPS5813626B2 (ja) * 1981-04-24 1983-03-15 日本電信電話株式会社 イオンシヤワ装置
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置

Also Published As

Publication number Publication date
US4609428A (en) 1986-09-02
KR860001468A (ko) 1986-02-26
EP0171949B1 (de) 1989-12-27
JPH0426208B2 (de) 1992-05-06
JPS6130036A (ja) 1986-02-12
EP0171949A2 (de) 1986-02-19
EP0171949A3 (en) 1987-05-13
KR900001685B1 (ko) 1990-03-19

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8339 Ceased/non-payment of the annual fee