DE3679928D1 - Monolitisch integrierte mikrowellenschaltungsanordnung. - Google Patents

Monolitisch integrierte mikrowellenschaltungsanordnung.

Info

Publication number
DE3679928D1
DE3679928D1 DE8686400716T DE3679928T DE3679928D1 DE 3679928 D1 DE3679928 D1 DE 3679928D1 DE 8686400716 T DE8686400716 T DE 8686400716T DE 3679928 T DE3679928 T DE 3679928T DE 3679928 D1 DE3679928 D1 DE 3679928D1
Authority
DE
Germany
Prior art keywords
circuit arrangement
microwave circuit
integrated microwave
monolitically
monolitically integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686400716T
Other languages
English (en)
Inventor
Yasutake Hirachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3679928D1 publication Critical patent/DE3679928D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DE8686400716T 1985-04-05 1986-04-03 Monolitisch integrierte mikrowellenschaltungsanordnung. Expired - Fee Related DE3679928D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7103585 1985-04-05

Publications (1)

Publication Number Publication Date
DE3679928D1 true DE3679928D1 (de) 1991-08-01

Family

ID=13448864

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686400716T Expired - Fee Related DE3679928D1 (de) 1985-04-05 1986-04-03 Monolitisch integrierte mikrowellenschaltungsanordnung.

Country Status (5)

Country Link
US (1) US4868613A (de)
EP (1) EP0197861B1 (de)
JP (1) JPS6230360A (de)
KR (1) KR900001394B1 (de)
DE (1) DE3679928D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
JPH01146354A (ja) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp 半導体記憶装置
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
US4967253A (en) * 1988-08-31 1990-10-30 International Business Machines Corporation Bipolar transistor integrated circuit technology
US5064772A (en) * 1988-08-31 1991-11-12 International Business Machines Corporation Bipolar transistor integrated circuit technology
JPH0294663A (ja) * 1988-09-30 1990-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5236854A (en) * 1989-12-11 1993-08-17 Yukio Higaki Compound semiconductor device and method for fabrication thereof
JP2551203B2 (ja) * 1990-06-05 1996-11-06 三菱電機株式会社 半導体装置
US5084750A (en) * 1991-02-20 1992-01-28 Raytheon Company Push-pull heterojunction bipolar transistor
EP0501279A1 (de) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Mikrowellen-Heterojunction-Bipolartransistoren, anwendbar für niedrige und hohe Leistungen sowie für Anwendungen mit niedrigem Rauschen, und deren Herstellungsverfahren
US5446294A (en) * 1991-07-31 1995-08-29 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US6294827B1 (en) * 1996-09-26 2001-09-25 Samsung Electronics Co., Ltd. Hybrid microwave-frequency integrated circuit
US5880517A (en) * 1998-02-04 1999-03-09 Northrop Grumman Corporation Microwave power transistor having matched impedance with integrated DC blocking capacitor and manufacturing method therefor
US6657425B2 (en) * 2001-06-26 2003-12-02 Koninklijke Philips Electronics N.V. Power measurement circuit including harmonic filter
GB2383467A (en) * 2001-12-21 2003-06-25 Marconi Comm Gmbh Trimming capacitor element in integrated circuit device with plate portions short-circuited by laser pulse
JP2008519441A (ja) * 2004-10-28 2008-06-05 ニトロネックス コーポレイション 窒化ガリウム材料を用いるモノリシックマイクロ波集積回路
US7906424B2 (en) 2007-08-01 2011-03-15 Advanced Micro Devices, Inc. Conductor bump method and apparatus
US20090032941A1 (en) * 2007-08-01 2009-02-05 Mclellan Neil Under Bump Routing Layer Method and Apparatus
JP5320774B2 (ja) * 2008-03-03 2013-10-23 三菱電機株式会社 半導体装置
US8314474B2 (en) * 2008-07-25 2012-11-20 Ati Technologies Ulc Under bump metallization for on-die capacitor
US10026731B1 (en) 2017-04-14 2018-07-17 Qualcomm Incorporated Compound semiconductor transistor integration with high density capacitor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588366A (en) * 1978-12-27 1980-07-04 Fujitsu Ltd Semiconductor device
JPS57198661A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Semiconductor device
JPS5831582A (ja) * 1981-08-20 1983-02-24 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JPS58147130A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 半導体装置の製造方法
DE3377960D1 (en) * 1982-06-30 1988-10-13 Fujitsu Ltd A field-effect semiconductor device
JPS595655A (ja) * 1982-07-01 1984-01-12 Fujitsu Ltd 半導体装置の製造方法
US4494016A (en) * 1982-07-26 1985-01-15 Sperry Corporation High performance MESFET transistor for VLSI implementation
US4601096A (en) * 1983-02-15 1986-07-22 Eaton Corporation Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy
US4507845A (en) * 1983-09-12 1985-04-02 Trw Inc. Method of making field effect transistors with opposed source _and gate regions
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
US4593457A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact

Also Published As

Publication number Publication date
KR900001394B1 (en) 1990-03-09
EP0197861B1 (de) 1991-06-26
EP0197861A3 (en) 1987-05-20
US4868613A (en) 1989-09-19
JPS6230360A (ja) 1987-02-09
EP0197861A2 (de) 1986-10-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee