KR860001468A - 이방성 드라이 에칭(dry etching)을 위한 마이크로파 플라즈마 처리장치 - Google Patents

이방성 드라이 에칭(dry etching)을 위한 마이크로파 플라즈마 처리장치

Info

Publication number
KR860001468A
KR860001468A KR1019850004648A KR850004648A KR860001468A KR 860001468 A KR860001468 A KR 860001468A KR 1019850004648 A KR1019850004648 A KR 1019850004648A KR 850004648 A KR850004648 A KR 850004648A KR 860001468 A KR860001468 A KR 860001468A
Authority
KR
South Korea
Prior art keywords
processing device
dry etching
plasma processing
microwave plasma
anisotropic dry
Prior art date
Application number
KR1019850004648A
Other languages
English (en)
Other versions
KR900001685B1 (ko
Inventor
슈우조 후지무라
Original Assignee
후지쑤가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쑤가부시끼가이샤 filed Critical 후지쑤가부시끼가이샤
Publication of KR860001468A publication Critical patent/KR860001468A/ko
Application granted granted Critical
Publication of KR900001685B1 publication Critical patent/KR900001685B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Gerontology & Geriatric Medicine (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1019850004648A 1984-07-23 1985-06-28 이방성 드라이 에칭(dry etching)을 위한 마이크로파 플라즈마 처리장치 KR900001685B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-152363 1984-07-23
JP15236384A JPS6130036A (ja) 1984-07-23 1984-07-23 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR860001468A true KR860001468A (ko) 1986-02-26
KR900001685B1 KR900001685B1 (ko) 1990-03-19

Family

ID=15538893

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850004648A KR900001685B1 (ko) 1984-07-23 1985-06-28 이방성 드라이 에칭(dry etching)을 위한 마이크로파 플라즈마 처리장치

Country Status (5)

Country Link
US (1) US4609428A (ko)
EP (1) EP0171949B1 (ko)
JP (1) JPS6130036A (ko)
KR (1) KR900001685B1 (ko)
DE (1) DE3575047D1 (ko)

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US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US8017198B2 (en) * 2009-04-24 2011-09-13 Ovshinsky Innovation Llc Thin film deposition via charged particle-depleted plasma achieved by magnetic confinement
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Also Published As

Publication number Publication date
KR900001685B1 (ko) 1990-03-19
JPS6130036A (ja) 1986-02-12
US4609428A (en) 1986-09-02
DE3575047D1 (de) 1990-02-01
EP0171949A3 (en) 1987-05-13
EP0171949B1 (en) 1989-12-27
JPH0426208B2 (ko) 1992-05-06
EP0171949A2 (en) 1986-02-19

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