KR860001468A - 이방성 드라이 에칭(dry etching)을 위한 마이크로파 플라즈마 처리장치 - Google Patents
이방성 드라이 에칭(dry etching)을 위한 마이크로파 플라즈마 처리장치Info
- Publication number
- KR860001468A KR860001468A KR1019850004648A KR850004648A KR860001468A KR 860001468 A KR860001468 A KR 860001468A KR 1019850004648 A KR1019850004648 A KR 1019850004648A KR 850004648 A KR850004648 A KR 850004648A KR 860001468 A KR860001468 A KR 860001468A
- Authority
- KR
- South Korea
- Prior art keywords
- processing device
- dry etching
- plasma processing
- microwave plasma
- anisotropic dry
- Prior art date
Links
- 238000001312 dry etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
- H01L21/145—Ageing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Gerontology & Geriatric Medicine (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59-152363 | 1984-07-23 | ||
JP15236384A JPS6130036A (ja) | 1984-07-23 | 1984-07-23 | マイクロ波プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860001468A true KR860001468A (ko) | 1986-02-26 |
KR900001685B1 KR900001685B1 (ko) | 1990-03-19 |
Family
ID=15538893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850004648A KR900001685B1 (ko) | 1984-07-23 | 1985-06-28 | 이방성 드라이 에칭(dry etching)을 위한 마이크로파 플라즈마 처리장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4609428A (ko) |
EP (1) | EP0171949B1 (ko) |
JP (1) | JPS6130036A (ko) |
KR (1) | KR900001685B1 (ko) |
DE (1) | DE3575047D1 (ko) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222534A (ja) * | 1985-03-28 | 1986-10-03 | Anelva Corp | 表面処理方法および装置 |
DE3638942A1 (de) * | 1985-11-15 | 1987-05-21 | Canon Kk | Stroemungssteuereinrichtung fuer einen feinpartikel-strom |
US4662977A (en) * | 1986-05-05 | 1987-05-05 | University Patents, Inc. | Neutral particle surface alteration |
JPS62281331A (ja) * | 1986-05-29 | 1987-12-07 | Fujitsu Ltd | エツチング方法 |
US5354416A (en) * | 1986-09-05 | 1994-10-11 | Sadayuki Okudaira | Dry etching method |
US5044314A (en) * | 1986-10-15 | 1991-09-03 | Advantage Production Technology, Inc. | Semiconductor wafer processing apparatus |
US5433788A (en) * | 1987-01-19 | 1995-07-18 | Hitachi, Ltd. | Apparatus for plasma treatment using electron cyclotron resonance |
JPH0620048B2 (ja) * | 1987-01-30 | 1994-03-16 | 富士電機株式会社 | 乾式薄膜加工装置 |
US4985112A (en) * | 1987-02-09 | 1991-01-15 | International Business Machines Corporation | Enhanced plasma etching |
US4930442A (en) * | 1987-03-27 | 1990-06-05 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus having an improved microwave transmissive window |
KR880013424A (ko) | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
JPH0672306B2 (ja) * | 1987-04-27 | 1994-09-14 | 株式会社半導体エネルギー研究所 | プラズマ処理装置およびプラズマ処理方法 |
DE3853551T2 (de) * | 1987-05-08 | 1995-10-05 | Hitachi Ltd | Plasmabehandlungsvorrichtung. |
KR920002864B1 (ko) * | 1987-07-20 | 1992-04-06 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리방법 및 그 장치 |
US4836902A (en) * | 1987-10-09 | 1989-06-06 | Northern Telecom Limited | Method and apparatus for removing coating from substrate |
US4859303A (en) * | 1987-10-09 | 1989-08-22 | Northern Telecom Limited | Method and apparatus for removing coating from substrate |
US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
US4973381A (en) * | 1987-11-30 | 1990-11-27 | Texas Instruments Incorporated | Method and apparatus for etching surface with excited gas |
US5115167A (en) * | 1988-04-05 | 1992-05-19 | Mitsubishi Denki Kabushiki Kaisha | Plasma processor |
US5146138A (en) * | 1988-04-05 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | Plasma processor |
JP2618001B2 (ja) * | 1988-07-13 | 1997-06-11 | 三菱電機株式会社 | プラズマ反応装置 |
US4952273A (en) * | 1988-09-21 | 1990-08-28 | Microscience, Inc. | Plasma generation in electron cyclotron resonance |
JPH04502981A (ja) * | 1988-10-14 | 1992-05-28 | アドバンテイジ・プロダクション・テクノロジー・インク | 半導体ウエハー処理の方法と装置 |
JP2790878B2 (ja) * | 1988-11-16 | 1998-08-27 | 治久 木下 | ドライプロセス装置 |
JPH07101685B2 (ja) * | 1989-01-26 | 1995-11-01 | 富士通株式会社 | マイクロ波プラズマ処理装置 |
US5145554A (en) * | 1989-02-23 | 1992-09-08 | Seiko Epson Corporation | Method of anisotropic dry etching of thin film semiconductors |
US5133830A (en) * | 1989-04-07 | 1992-07-28 | Seiko Epson Corporation | Method of pretreatment and anisotropic dry etching of thin film semiconductors |
US5236537A (en) * | 1989-04-07 | 1993-08-17 | Seiko Epson Corporation | Plasma etching apparatus |
EP0395415B1 (en) * | 1989-04-27 | 1995-03-15 | Fujitsu Limited | Apparatus for and method of processing a semiconductor device using microwave-generated plasma |
EP0396919A3 (en) * | 1989-05-08 | 1991-07-10 | Applied Materials, Inc. | Plasma reactor and method for semiconductor processing |
US5225024A (en) * | 1989-05-08 | 1993-07-06 | Applied Materials, Inc. | Magnetically enhanced plasma reactor system for semiconductor processing |
US5194119A (en) * | 1989-05-15 | 1993-03-16 | Seiko Epson Corporation | Method of anisotropic dry etching of thin film semiconductors |
US5061838A (en) * | 1989-06-23 | 1991-10-29 | Massachusetts Institute Of Technology | Toroidal electron cyclotron resonance reactor |
JPH0775226B2 (ja) * | 1990-04-10 | 1995-08-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | プラズマ処理方法及び装置 |
US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
GB2256084A (en) * | 1991-05-13 | 1992-11-25 | Integrated Plasma Ltd | Plasma deposition and etching of substrates. |
DE4119362A1 (de) * | 1991-06-12 | 1992-12-17 | Leybold Ag | Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren |
US5279669A (en) * | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
US5282899A (en) * | 1992-06-10 | 1994-02-01 | Ruxam, Inc. | Apparatus for the production of a dissociated atomic particle flow |
FR2705584B1 (fr) * | 1993-05-26 | 1995-06-30 | Commissariat Energie Atomique | Dispositif de séparation isotopique par résonance cyclotronique ionique. |
US5783100A (en) * | 1994-03-16 | 1998-07-21 | Micron Display Technology, Inc. | Method of high density plasma etching for semiconductor manufacture |
US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
US7102737B2 (en) * | 1997-11-04 | 2006-09-05 | Micron Technology, Inc. | Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light |
US6704107B1 (en) | 1997-11-04 | 2004-03-09 | Micron Technology, Inc. | Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light |
US5969805A (en) | 1997-11-04 | 1999-10-19 | Micron Technology, Inc. | Method and apparatus employing external light source for endpoint detection |
JPH11330262A (ja) * | 1998-05-15 | 1999-11-30 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6780305B2 (en) | 2001-02-20 | 2004-08-24 | Fuji Photo Film Co., Ltd. | Method for producing support for planographic printing plate, support for planographic printing plate, and planographic printing plate precursor |
US6794272B2 (en) * | 2001-10-26 | 2004-09-21 | Ifire Technologies, Inc. | Wafer thinning using magnetic mirror plasma |
GB0209291D0 (en) * | 2002-04-24 | 2002-06-05 | Trikon Technologies Ltd | Plasma processing apparatus |
US6876154B2 (en) * | 2002-04-24 | 2005-04-05 | Trikon Holdings Limited | Plasma processing apparatus |
US20040110388A1 (en) * | 2002-12-06 | 2004-06-10 | International Business Machines Corporation | Apparatus and method for shielding a wafer from charged particles during plasma etching |
US7695590B2 (en) | 2004-03-26 | 2010-04-13 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having plural ion shower grids |
US7244474B2 (en) * | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
US8017198B2 (en) * | 2009-04-24 | 2011-09-13 | Ovshinsky Innovation Llc | Thin film deposition via charged particle-depleted plasma achieved by magnetic confinement |
PL2251453T3 (pl) | 2009-05-13 | 2014-05-30 | Sio2 Medical Products Inc | Uchwyt na pojemnik |
US8624502B2 (en) * | 2009-05-15 | 2014-01-07 | Alpha Source Llc | Particle beam source apparatus, system and method |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US9024273B2 (en) * | 2010-04-20 | 2015-05-05 | Varian Semiconductor Equipment Associates, Inc. | Method to generate molecular ions from ions with a smaller atomic mass |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
JP5730521B2 (ja) * | 2010-09-08 | 2015-06-10 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
CN103086607B (zh) * | 2011-10-28 | 2015-08-26 | 清华大学 | 光栅的制备方法 |
AU2012318242A1 (en) | 2011-11-11 | 2013-05-30 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
EP2846755A1 (en) | 2012-05-09 | 2015-03-18 | SiO2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
JP6509734B2 (ja) | 2012-11-01 | 2019-05-08 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 皮膜検査方法 |
US9903782B2 (en) | 2012-11-16 | 2018-02-27 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
CN105705676B (zh) | 2012-11-30 | 2018-09-07 | Sio2医药产品公司 | 控制在医用注射器、药筒等上的pecvd沉积的均匀性 |
EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
WO2014164928A1 (en) | 2013-03-11 | 2014-10-09 | Sio2 Medical Products, Inc. | Coated packaging |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
EP2971227B1 (en) | 2013-03-15 | 2017-11-15 | Si02 Medical Products, Inc. | Coating method. |
EP3693493A1 (en) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
TWI546858B (zh) * | 2014-04-17 | 2016-08-21 | 紫焰科技股份有限公司 | 非接觸式物理蝕刻系統及方法 |
EP3337915B1 (en) | 2015-08-18 | 2021-11-03 | SiO2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
US11802053B2 (en) * | 2021-06-10 | 2023-10-31 | Daniel Hodes | Method and apparatus for the fabrication of diamond by shockwaves |
US11608272B1 (en) | 2021-09-15 | 2023-03-21 | Daniel Hodes | System and method for the fabrication of nanodiamond particles |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1550853A (en) * | 1975-10-06 | 1979-08-22 | Hitachi Ltd | Apparatus and process for plasma treatment |
JPS5422778A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Plasma current transfer device |
FR2402301A1 (fr) * | 1977-09-02 | 1979-03-30 | Commissariat Energie Atomique | Appareil de micro-usinage par erosion ionique utilisant une source de plasma |
JPS5751265A (en) * | 1980-09-10 | 1982-03-26 | Hitachi Ltd | Microwave plasma etching device |
JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
JPS5813626B2 (ja) * | 1981-04-24 | 1983-03-15 | 日本電信電話株式会社 | イオンシヤワ装置 |
JPS6016424A (ja) * | 1983-07-08 | 1985-01-28 | Fujitsu Ltd | マイクロ波プラズマ処理方法及びその装置 |
-
1984
- 1984-07-23 JP JP15236384A patent/JPS6130036A/ja active Granted
-
1985
- 1985-06-28 KR KR1019850004648A patent/KR900001685B1/ko not_active IP Right Cessation
- 1985-07-18 US US06/756,233 patent/US4609428A/en not_active Expired - Fee Related
- 1985-07-23 DE DE8585305217T patent/DE3575047D1/de not_active Expired - Fee Related
- 1985-07-23 EP EP85305217A patent/EP0171949B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
KR900001685B1 (ko) | 1990-03-19 |
JPS6130036A (ja) | 1986-02-12 |
US4609428A (en) | 1986-09-02 |
DE3575047D1 (de) | 1990-02-01 |
EP0171949A3 (en) | 1987-05-13 |
EP0171949B1 (en) | 1989-12-27 |
JPH0426208B2 (ko) | 1992-05-06 |
EP0171949A2 (en) | 1986-02-19 |
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G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19930105 Year of fee payment: 4 |
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LAPS | Lapse due to unpaid annual fee |