DE68927134D1 - Mikrowellen-Plasma-Bearbeitungsgerät - Google Patents

Mikrowellen-Plasma-Bearbeitungsgerät

Info

Publication number
DE68927134D1
DE68927134D1 DE68927134T DE68927134T DE68927134D1 DE 68927134 D1 DE68927134 D1 DE 68927134D1 DE 68927134 T DE68927134 T DE 68927134T DE 68927134 T DE68927134 T DE 68927134T DE 68927134 D1 DE68927134 D1 DE 68927134D1
Authority
DE
Germany
Prior art keywords
processing device
plasma processing
microwave plasma
microwave
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68927134T
Other languages
English (en)
Other versions
DE68927134T2 (de
Inventor
Soichiro Kawakami
Masahiro Kanai
Takayoshi Arai
Tsutomu Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE68927134D1 publication Critical patent/DE68927134D1/de
Application granted granted Critical
Publication of DE68927134T2 publication Critical patent/DE68927134T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE68927134T 1988-05-25 1989-05-23 Mikrowellen-Plasma-Bearbeitungsgerät Expired - Fee Related DE68927134T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63125794A JPH01297141A (ja) 1988-05-25 1988-05-25 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE68927134D1 true DE68927134D1 (de) 1996-10-17
DE68927134T2 DE68927134T2 (de) 1997-02-20

Family

ID=14919042

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68927134T Expired - Fee Related DE68927134T2 (de) 1988-05-25 1989-05-23 Mikrowellen-Plasma-Bearbeitungsgerät

Country Status (5)

Country Link
US (1) US5038713A (de)
EP (1) EP0343602B1 (de)
JP (1) JPH01297141A (de)
CN (1) CN1029992C (de)
DE (1) DE68927134T2 (de)

Families Citing this family (146)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270616A (en) * 1989-09-25 1993-12-14 Ryohei Itatani Microwave plasma generating apparatus
JP2816365B2 (ja) * 1990-09-19 1998-10-27 株式会社 ユーハ味覚糖精密工学研究所 ラジカル反応による無歪精密加工装置
US5804033A (en) * 1990-09-26 1998-09-08 Hitachi, Ltd. Microwave plasma processing method and apparatus
JP2714247B2 (ja) * 1990-10-29 1998-02-16 キヤノン株式会社 マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3038950B2 (ja) * 1991-02-12 2000-05-08 ソニー株式会社 ドライエッチング方法
US5302266A (en) * 1992-03-20 1994-04-12 International Business Machines Corporation Method and apparatus for filing high aspect patterns with metal
JPH0645094A (ja) * 1992-03-31 1994-02-18 Matsushita Electric Ind Co Ltd プラズマ発生方法およびその装置
KR930021034A (ko) * 1992-03-31 1993-10-20 다니이 아끼오 플라즈마발생방법 및 그 발생장치
US5282899A (en) * 1992-06-10 1994-02-01 Ruxam, Inc. Apparatus for the production of a dissociated atomic particle flow
DE4305748A1 (de) * 1993-02-25 1994-09-01 Leybold Ag Vorrichtung zum Beschichten und/oder Ätzen von Substraten in einer Vakuumkammer
US5387288A (en) * 1993-05-14 1995-02-07 Modular Process Technology Corp. Apparatus for depositing diamond and refractory materials comprising rotating antenna
JPH07183194A (ja) * 1993-12-24 1995-07-21 Sony Corp 多層レジストパターン形成方法
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors
US6057645A (en) * 1997-12-31 2000-05-02 Eaton Corporation Plasma discharge device with dynamic tuning by a movable microwave trap
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
JP4381526B2 (ja) * 1999-10-26 2009-12-09 東京エレクトロン株式会社 プラズマエッチング方法
DE10114022C1 (de) * 2001-03-22 2002-10-24 Karlsruhe Forschzent Vorrichtung zur räumlichen Justierung der Maxima und Minima von elektromagnetischen Feldern in einer Prozeßanlage zur thermischen Prozessierung von Materialien
JP5138131B2 (ja) * 2001-03-28 2013-02-06 忠弘 大見 マイクロ波プラズマプロセス装置及びプラズマプロセス制御方法
KR100500360B1 (ko) * 2002-01-26 2005-07-12 고등기술연구원연구조합 고효율 상압 마이크로웨이브 플라즈마시스템
FR2838020B1 (fr) * 2002-03-28 2004-07-02 Centre Nat Rech Scient Dispositif de confinement de plasma
JP2003342757A (ja) * 2002-05-28 2003-12-03 Canon Inc ミリング方法およびミリング装置
FR2864795B1 (fr) * 2004-01-06 2008-04-18 Air Liquide Procede de traitement des gaz par des decharges hautes frequence
US7034266B1 (en) 2005-04-27 2006-04-25 Kimberly-Clark Worldwide, Inc. Tunable microwave apparatus
KR101502305B1 (ko) * 2007-07-20 2015-03-13 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 처리 장치 내의 rf 구동된 전극으로 가스를 전달하기 위한 rf 초크
WO2009065016A1 (en) * 2007-11-16 2009-05-22 Applied Materials, Inc. Rpsc and rf feedthrough
JP5240905B2 (ja) * 2008-04-07 2013-07-17 国立大学法人信州大学 磁界印加シリコン結晶育成方法および装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
PL2469975T3 (pl) 2010-12-21 2016-09-30 Sterowanie wydajnością źródła mikrofalowego w mikrofalowym urządzeniu podgrzewającym
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021865D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
CA2821621C (en) 2010-12-23 2018-03-27 Element Six Limited Controlling doping of synthetic diamond material
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
CN103668468A (zh) * 2012-09-05 2014-03-26 苏州阿特斯阳光电力科技有限公司 硅片的抛光方法
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
CN103508452B (zh) * 2013-09-29 2016-01-20 陈晖� 一种金刚石结晶机
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9653266B2 (en) * 2014-03-27 2017-05-16 Mks Instruments, Inc. Microwave plasma applicator with improved power uniformity
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
CN105097406B (zh) * 2015-06-11 2017-06-09 京东方科技集团股份有限公司 平滑装置、平滑方法、薄膜晶体管、显示基板及显示装置
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
JP7111299B2 (ja) * 2016-11-14 2022-08-02 国立研究開発法人産業技術総合研究所 ダイヤモンドを合成する方法及びプラズマ処理装置
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN112051023B (zh) * 2020-09-14 2022-05-10 中国空气动力研究与发展中心高速空气动力研究所 一种高速风洞微波毁伤试验装置
CN114560443B (zh) * 2022-03-02 2023-07-07 瓮福(集团)有限责任公司 一种同时制备氟化氢及晶体硅产品的微波等离子体装置
CN115584492A (zh) * 2022-10-19 2023-01-10 国网安徽省电力有限公司马鞍山供电公司 一种高密度大气压碳氟等离子体射流的产生方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
JPS5939178B2 (ja) * 1977-04-25 1984-09-21 株式会社東芝 活性化ガス発生装置
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4689459A (en) * 1985-09-09 1987-08-25 Gerling John E Variable Q microwave applicator and method
JPH0740566B2 (ja) * 1986-02-04 1995-05-01 株式会社日立製作所 プラズマ処理方法及びその装置
JPS63100186A (ja) * 1986-10-15 1988-05-02 Canon Inc マイクロ波プラズマ処理装置
DE3750115T2 (de) * 1986-10-20 1995-01-19 Hitachi Ltd Plasmabearbeitungsgerät.
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator
JP2670623B2 (ja) * 1988-09-19 1997-10-29 アネルバ株式会社 マイクロ波プラズマ処理装置

Also Published As

Publication number Publication date
EP0343602A3 (de) 1991-01-09
EP0343602A2 (de) 1989-11-29
JPH01297141A (ja) 1989-11-30
CN1029992C (zh) 1995-10-11
CN1038673A (zh) 1990-01-10
EP0343602B1 (de) 1996-09-11
US5038713A (en) 1991-08-13
DE68927134T2 (de) 1997-02-20

Similar Documents

Publication Publication Date Title
DE68927134D1 (de) Mikrowellen-Plasma-Bearbeitungsgerät
DE69030744D1 (de) Plasma-Bearbeitungsgerät
DE69010516D1 (de) Mikrowellen-Plasmabearbeitungsgerät.
DE69008228D1 (de) Plasmabearbeitungsvorrichtung.
DE69231479D1 (de) Magnetron-Plasma-Bearbeitungsvorrichtung
DE69231405D1 (de) Mikrowellenplasma-bearbeitungsvorrichtung
DE69318480D1 (de) Plasmabearbeitungsgerät
DE3750115D1 (de) Plasmabearbeitungsgerät.
KR900008641A (ko) 레지스트 처리장치
DE69124178D1 (de) Gerät zur Magnetronplasmabearbeitung
DE68912400D1 (de) Plasmaätzvorrichtung.
KR900006738A (ko) 전자렌지
DE68926923D1 (de) Mikrowellenionenquelle
DE69027299D1 (de) Paralleles Verarbeitungssystem
DE69027134D1 (de) Zeichenverarbeitungsgerät
DE68920613D1 (de) Mikrowellenplasmavorrichtung für ausgedehnte Oberfläche.
KR860005739A (ko) 진공 처리장치
DE69405080D1 (de) Plasmabearbeitungsgerät
DE3887933D1 (de) Plasma-Bearbeitungsgerät.
DE68927416D1 (de) Dokumentverarbeitungsgerät
DE3581605D1 (de) Bearbeitungsverfahren und -vorrichtung mittels mikrowellenplasma.
DE3855896D1 (de) Plasmavorrichtung
KR900010598A (ko) 묘화 처리 장치
KR900009194A (ko) 가공장치
DE69131391D1 (de) Plasmabearbeitungsgerät

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee