DE69231479D1 - Magnetron-Plasma-Bearbeitungsvorrichtung - Google Patents
Magnetron-Plasma-BearbeitungsvorrichtungInfo
- Publication number
- DE69231479D1 DE69231479D1 DE69231479T DE69231479T DE69231479D1 DE 69231479 D1 DE69231479 D1 DE 69231479D1 DE 69231479 T DE69231479 T DE 69231479T DE 69231479 T DE69231479 T DE 69231479T DE 69231479 D1 DE69231479 D1 DE 69231479D1
- Authority
- DE
- Germany
- Prior art keywords
- processing device
- plasma processing
- magnetron plasma
- magnetron
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20740791A JP3238933B2 (ja) | 1991-07-23 | 1991-07-23 | マグネトロンプラズマ処理方法 |
JP3207408A JP3054638B2 (ja) | 1991-07-23 | 1991-07-23 | マグネトロンプラズマ処理装置 |
JP20740991 | 1991-07-23 | ||
JP3208445A JPH0529435A (ja) | 1991-07-24 | 1991-07-24 | 搬送装置 |
JP20844491A JP2971995B2 (ja) | 1991-07-24 | 1991-07-24 | 搬送装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69231479D1 true DE69231479D1 (de) | 2000-11-02 |
DE69231479T2 DE69231479T2 (de) | 2001-04-26 |
Family
ID=27529430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69231479T Expired - Fee Related DE69231479T2 (de) | 1991-07-23 | 1992-07-23 | Magnetron-Plasma-Bearbeitungsvorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5271788A (de) |
EP (1) | EP0525633B1 (de) |
KR (1) | KR100297358B1 (de) |
DE (1) | DE69231479T2 (de) |
TW (1) | TW239897B (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US6063233A (en) | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6165311A (en) | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
JP3172758B2 (ja) * | 1993-11-20 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
JP2659919B2 (ja) * | 1994-01-13 | 1997-09-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プラズマの不均一性を補正するプラズマ装置 |
JP3124204B2 (ja) * | 1994-02-28 | 2001-01-15 | 株式会社東芝 | プラズマ処理装置 |
US5639334A (en) * | 1995-03-07 | 1997-06-17 | International Business Machines Corporation | Uniform gas flow arrangements |
DE19532100A1 (de) * | 1995-08-30 | 1997-03-06 | Leybold Ag | Vorrichtung zur Plasmabehandlung von Substraten |
TW279240B (en) | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
US5891348A (en) * | 1996-01-26 | 1999-04-06 | Applied Materials, Inc. | Process gas focusing apparatus and method |
US5748434A (en) * | 1996-06-14 | 1998-05-05 | Applied Materials, Inc. | Shield for an electrostatic chuck |
US6284093B1 (en) | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
US5976309A (en) * | 1996-12-17 | 1999-11-02 | Lsi Logic Corporation | Electrode assembly for plasma reactor |
BE1011098A3 (fr) * | 1997-04-10 | 1999-04-06 | Cockerill Rech & Dev | Procede et dispositif de decapage. |
US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
JP4602545B2 (ja) * | 1997-09-16 | 2010-12-22 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバの半導体ワークピース用シュラウド |
US6039836A (en) * | 1997-12-19 | 2000-03-21 | Lam Research Corporation | Focus rings |
US6165910A (en) * | 1997-12-29 | 2000-12-26 | Lam Research Corporation | Self-aligned contacts for semiconductor device |
US6579421B1 (en) | 1999-01-07 | 2003-06-17 | Applied Materials, Inc. | Transverse magnetic field for ionized sputter deposition |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
JP4394778B2 (ja) * | 1999-09-22 | 2010-01-06 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US6494958B1 (en) | 2000-06-29 | 2002-12-17 | Applied Materials Inc. | Plasma chamber support with coupled electrode |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
JP2002261147A (ja) | 2001-03-02 | 2002-09-13 | Seiko Instruments Inc | 真空装置および搬送装置 |
US6554954B2 (en) | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
TWI246873B (en) * | 2001-07-10 | 2006-01-01 | Tokyo Electron Ltd | Plasma processing device |
JP2003100713A (ja) * | 2001-09-26 | 2003-04-04 | Kawasaki Microelectronics Kk | プラズマ電極用カバー |
WO2004095529A2 (en) * | 2003-03-21 | 2004-11-04 | Tokyo Electron Limited | Method and apparatus for reducing substrate backside deposition during processing |
US20050103274A1 (en) * | 2003-11-14 | 2005-05-19 | Cheng-Tsung Yu | Reliability assessment system and method |
KR101218114B1 (ko) | 2005-08-04 | 2013-01-18 | 주성엔지니어링(주) | 플라즈마 식각 장치 |
JP7057358B2 (ja) * | 2016-12-02 | 2022-04-19 | エーエスエムエル ネザーランズ ビー.ブイ. | エッチングパラメータを変更する方法及びコンピュータプログラム |
US11702748B2 (en) | 2017-03-03 | 2023-07-18 | Lam Research Corporation | Wafer level uniformity control in remote plasma film deposition |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51124379A (en) * | 1975-04-23 | 1976-10-29 | Fujitsu Ltd | Plasma etching method |
JPS5927213A (ja) * | 1982-08-09 | 1984-02-13 | Ichiro Ishii | 上空より写真撮影や計測を行なう方法 |
US4581118A (en) * | 1983-01-26 | 1986-04-08 | Materials Research Corporation | Shaped field magnetron electrode |
JPS60120520A (ja) * | 1983-12-02 | 1985-06-28 | Canon Inc | 半導体製造用搬送装置 |
US4891087A (en) * | 1984-10-22 | 1990-01-02 | Texas Instruments Incorporated | Isolation substrate ring for plasma reactor |
US4871420A (en) * | 1984-12-18 | 1989-10-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Selective etching process |
US4552369A (en) * | 1984-12-24 | 1985-11-12 | Gray Tool Company | Stem sealing for high pressure valve |
US4572759A (en) * | 1984-12-26 | 1986-02-25 | Benzing Technology, Inc. | Troide plasma reactor with magnetic enhancement |
DE3678612D1 (de) * | 1985-05-20 | 1991-05-16 | Tegal Corp | Plasmareaktor mit entnehmbarem einsatz. |
US4793975A (en) * | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
JPS61278149A (ja) * | 1985-06-03 | 1986-12-09 | Canon Inc | ウエハ位置決め装置 |
JPS6216167A (ja) * | 1985-07-15 | 1987-01-24 | Canon Inc | プリンタ |
JPS6221644A (ja) * | 1985-07-22 | 1987-01-30 | Canon Inc | ウエハ搬送装置 |
JPS62150735A (ja) * | 1985-12-25 | 1987-07-04 | Canon Inc | ウエハ搬送装置 |
KR910005733B1 (ko) * | 1986-01-17 | 1991-08-02 | 가부시기가이샤 히다찌 세이사꾸쇼 | 플라즈마 처리방법 및 장치 |
JPS63224232A (ja) * | 1987-03-13 | 1988-09-19 | Hitachi Ltd | プラズマ処理方法および装置 |
DE3854561T2 (de) * | 1987-07-02 | 1996-05-02 | Toshiba Kawasaki Kk | Verfahren zum Trockenätzen. |
JPH0618182B2 (ja) * | 1987-08-05 | 1994-03-09 | 松下電器産業株式会社 | ドライエッチング装置 |
JPH0730468B2 (ja) * | 1988-06-09 | 1995-04-05 | 日電アネルバ株式会社 | ドライエッチング装置 |
JP2892787B2 (ja) * | 1990-07-20 | 1999-05-17 | 東京エレクトロン株式会社 | 電気信号の抽出方法 |
-
1992
- 1992-07-22 KR KR1019920013069A patent/KR100297358B1/ko not_active IP Right Cessation
- 1992-07-23 US US07/917,361 patent/US5271788A/en not_active Expired - Lifetime
- 1992-07-23 EP EP92112573A patent/EP0525633B1/de not_active Expired - Lifetime
- 1992-07-23 DE DE69231479T patent/DE69231479T2/de not_active Expired - Fee Related
- 1992-08-17 TW TW081106481A patent/TW239897B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69231479T2 (de) | 2001-04-26 |
EP0525633B1 (de) | 2000-09-27 |
TW239897B (de) | 1995-02-01 |
US5271788A (en) | 1993-12-21 |
KR100297358B1 (ko) | 2001-11-30 |
EP0525633A1 (de) | 1993-02-03 |
KR930003271A (ko) | 1993-02-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |