JP3042127B2
(ja)
*
|
1991-09-02 |
2000-05-15 |
富士電機株式会社 |
酸化シリコン膜の製造方法および製造装置
|
US5376223A
(en)
*
|
1992-01-09 |
1994-12-27 |
Varian Associates, Inc. |
Plasma etch process
|
US5226967A
(en)
*
|
1992-05-14 |
1993-07-13 |
Lam Research Corporation |
Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
|
US5306985A
(en)
*
|
1992-07-17 |
1994-04-26 |
Sematech, Inc. |
ECR apparatus with magnetic coil for plasma refractive index control
|
US5455085A
(en)
*
|
1994-02-17 |
1995-10-03 |
Hughes Aircraft Company |
Double pane microwave window
|
EP0716562B1
(de)
*
|
1994-12-07 |
1997-05-21 |
Balzers und Leybold Deutschland Holding Aktiengesellschaft |
Vorrichtung für Dünnschichtverfahren zur Behandlung grossflächiger Substrate
|
US5556521A
(en)
*
|
1995-03-24 |
1996-09-17 |
Sony Corporation |
Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
|
US5733820A
(en)
*
|
1995-04-27 |
1998-03-31 |
Sharp Kabushiki Kaisha |
Dry etching method
|
KR970071945A
(ko)
*
|
1996-02-20 |
1997-11-07 |
가나이 쯔도무 |
플라즈마처리방법 및 장치
|
KR100293033B1
(ko)
*
|
1996-03-28 |
2001-06-15 |
고지마 마타오 |
플라즈마 처리장치 및 플라즈마 처리방법
|
JPH09321030A
(ja)
|
1996-05-31 |
1997-12-12 |
Tokyo Electron Ltd |
マイクロ波プラズマ処理装置
|
JP3368159B2
(ja)
*
|
1996-11-20 |
2003-01-20 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
US6039834A
(en)
|
1997-03-05 |
2000-03-21 |
Applied Materials, Inc. |
Apparatus and methods for upgraded substrate processing system with microwave plasma source
|
US6029602A
(en)
*
|
1997-04-22 |
2000-02-29 |
Applied Materials, Inc. |
Apparatus and method for efficient and compact remote microwave plasma generation
|
US6026762A
(en)
|
1997-04-23 |
2000-02-22 |
Applied Materials, Inc. |
Apparatus for improved remote microwave plasma source for use with substrate processing systems
|
US6274058B1
(en)
|
1997-07-11 |
2001-08-14 |
Applied Materials, Inc. |
Remote plasma cleaning method for processing chambers
|
US6099648A
(en)
*
|
1997-08-06 |
2000-08-08 |
Applied Materials, Inc. |
Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
|
US20020011215A1
(en)
|
1997-12-12 |
2002-01-31 |
Goushu Tei |
Plasma treatment apparatus and method of manufacturing optical parts using the same
|
JP2001102309A
(ja)
*
|
1998-04-09 |
2001-04-13 |
Tokyo Electron Ltd |
ガス処理装置
|
JPH11297673A
(ja)
|
1998-04-15 |
1999-10-29 |
Hitachi Ltd |
プラズマ処理装置及びクリーニング方法
|
JP3813741B2
(ja)
*
|
1998-06-04 |
2006-08-23 |
尚久 後藤 |
プラズマ処理装置
|
KR100297552B1
(ko)
*
|
1998-08-03 |
2001-11-30 |
윤종용 |
반도체소자제조용식각장치의절연창
|
US6212989B1
(en)
*
|
1999-05-04 |
2001-04-10 |
The United States Of America As Represented By The Secretary Of The Army |
High pressure, high temperature window assembly and method of making the same
|
US6228438B1
(en)
|
1999-08-10 |
2001-05-08 |
Unakis Balzers Aktiengesellschaft |
Plasma reactor for the treatment of large size substrates
|
DE10010766B4
(de)
*
|
2000-03-04 |
2006-11-30 |
Schott Ag |
Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten
|
JP4222707B2
(ja)
*
|
2000-03-24 |
2009-02-12 |
東京エレクトロン株式会社 |
プラズマ処理装置及び方法、ガス供給リング及び誘電体
|
WO2001076326A1
(en)
*
|
2000-03-30 |
2001-10-11 |
Tokyo Electron Limited |
Optical monitoring and control system and method for plasma reactors
|
JP2002047034A
(ja)
|
2000-07-31 |
2002-02-12 |
Shinetsu Quartz Prod Co Ltd |
プラズマを利用したプロセス装置用の石英ガラス治具
|
US7270724B2
(en)
|
2000-12-13 |
2007-09-18 |
Uvtech Systems, Inc. |
Scanning plasma reactor
|
US6773683B2
(en)
*
|
2001-01-08 |
2004-08-10 |
Uvtech Systems, Inc. |
Photocatalytic reactor system for treating flue effluents
|
JP2002299240A
(ja)
*
|
2001-03-28 |
2002-10-11 |
Tadahiro Omi |
プラズマ処理装置
|
JP4610126B2
(ja)
*
|
2001-06-14 |
2011-01-12 |
株式会社神戸製鋼所 |
プラズマcvd装置
|
US6838387B1
(en)
|
2001-06-21 |
2005-01-04 |
John Zajac |
Fast etching system and process
|
US20060191637A1
(en)
*
|
2001-06-21 |
2006-08-31 |
John Zajac |
Etching Apparatus and Process with Thickness and Uniformity Control
|
US20050059250A1
(en)
*
|
2001-06-21 |
2005-03-17 |
Savas Stephen Edward |
Fast etching system and process for organic materials
|
WO2003036224A1
(en)
*
|
2001-10-24 |
2003-05-01 |
Tokyo Electron Limited |
Method and apparatus for wall film monitoring
|
JPWO2003037503A1
(ja)
*
|
2001-10-30 |
2005-02-17 |
節 安斎 |
マイクロ波プラズマ発生装置
|
US7056416B2
(en)
*
|
2002-02-15 |
2006-06-06 |
Matsushita Electric Industrial Co., Ltd. |
Atmospheric pressure plasma processing method and apparatus
|
JP4008728B2
(ja)
*
|
2002-03-20 |
2007-11-14 |
株式会社 液晶先端技術開発センター |
プラズマ処理装置
|
JP3723783B2
(ja)
*
|
2002-06-06 |
2005-12-07 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
US7779783B2
(en)
*
|
2002-08-14 |
2010-08-24 |
Tokyo Electron Limited |
Plasma processing device
|
JP4141764B2
(ja)
*
|
2002-08-20 |
2008-08-27 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
KR101022767B1
(ko)
*
|
2003-01-15 |
2011-03-17 |
삼성전자주식회사 |
플라즈마 발생 시스템
|
JP4261236B2
(ja)
*
|
2003-04-02 |
2009-04-30 |
株式会社アルバック |
マイクロ波プラズマ処理装置および処理方法
|
JP4299862B2
(ja)
*
|
2003-05-20 |
2009-07-22 |
バイオタージ・アクチボラゲット |
マイクロ波加熱装置
|
KR100872260B1
(ko)
|
2004-02-16 |
2008-12-05 |
도쿄엘렉트론가부시키가이샤 |
플라즈마 처리장치 및 플라즈마 처리방법
|
KR20050089516A
(ko)
*
|
2004-03-05 |
2005-09-08 |
학교법인 성균관대학 |
전자석이 구비된 반도체 식각용 중성빔 소오스
|
US8136479B2
(en)
*
|
2004-03-19 |
2012-03-20 |
Sharp Kabushiki Kaisha |
Plasma treatment apparatus and plasma treatment method
|
US6965287B2
(en)
*
|
2004-03-31 |
2005-11-15 |
Tokyo Electron Limited |
Low reflection microwave window
|
JP2005340964A
(ja)
*
|
2004-05-24 |
2005-12-08 |
Toyo Seikan Kaisha Ltd |
マイクロ波供給システム
|
DE102004045046B4
(de)
*
|
2004-09-15 |
2007-01-04 |
Schott Ag |
Verfahren und Vorrichtung zum Aufbringen einer elektrisch leitfähigen transparenten Beschichtung auf ein Substrat
|
US7396431B2
(en)
*
|
2004-09-30 |
2008-07-08 |
Tokyo Electron Limited |
Plasma processing system for treating a substrate
|
US7584714B2
(en)
*
|
2004-09-30 |
2009-09-08 |
Tokyo Electron Limited |
Method and system for improving coupling between a surface wave plasma source and a plasma space
|
JP2006134686A
(ja)
*
|
2004-11-05 |
2006-05-25 |
Micro Denshi Kk |
マイクロ波を利用したプラズマ発生装置
|
JP4953153B2
(ja)
*
|
2005-07-28 |
2012-06-13 |
住友電気工業株式会社 |
マイクロ波プラズマcvd装置
|
JP4910396B2
(ja)
*
|
2006-01-12 |
2012-04-04 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
DE102006006289A1
(de)
*
|
2006-02-10 |
2007-08-23 |
R3T Gmbh Rapid Reactive Radicals Technology |
Vorrichtung und Verfahren zur Erzeugung angeregter und/oder ionisierter Teilchen in einem Plasma
|
JP4873405B2
(ja)
*
|
2006-03-24 |
2012-02-08 |
東京エレクトロン株式会社 |
プラズマ処理装置と方法
|
US7485827B2
(en)
|
2006-07-21 |
2009-02-03 |
Alter S.R.L. |
Plasma generator
|
US20080196243A1
(en)
*
|
2006-11-14 |
2008-08-21 |
Texas Instruments Deutschland Gnbh |
Device for Coupling Electromagnetic Radiation from a Source into a Microwave Chamber
|
JP5142074B2
(ja)
*
|
2007-01-29 |
2013-02-13 |
住友電気工業株式会社 |
マイクロ波プラズマcvd装置
|
CN102090153A
(zh)
*
|
2008-01-31 |
2011-06-08 |
东京毅力科创株式会社 |
微波等离子体处理装置
|
EP2395814A4
(de)
*
|
2009-02-09 |
2014-12-31 |
Satake Eng Co Ltd |
Mikrowellenheizvorrichtung
|
US8415884B2
(en)
|
2009-09-08 |
2013-04-09 |
Tokyo Electron Limited |
Stable surface wave plasma source
|
GB0920633D0
(en)
|
2009-11-25 |
2010-01-13 |
Rdbiomed Ltd |
Inhibition of pancreatic lipase
|
JP5593722B2
(ja)
*
|
2010-02-12 |
2014-09-24 |
パナソニック株式会社 |
マイクロ波加熱調理器
|
US20120186747A1
(en)
*
|
2011-01-26 |
2012-07-26 |
Obama Shinji |
Plasma processing apparatus
|
US20130023129A1
(en)
|
2011-07-20 |
2013-01-24 |
Asm America, Inc. |
Pressure transmitter for a semiconductor processing environment
|
JP5653397B2
(ja)
*
|
2012-08-23 |
2015-01-14 |
株式会社日立パワーソリューションズ |
マイクロ波加熱装置
|
KR101661076B1
(ko)
*
|
2012-10-11 |
2016-09-28 |
도쿄엘렉트론가부시키가이샤 |
성막 장치
|
US10714315B2
(en)
|
2012-10-12 |
2020-07-14 |
Asm Ip Holdings B.V. |
Semiconductor reaction chamber showerhead
|
JP2014112644A
(ja)
*
|
2012-11-06 |
2014-06-19 |
Tokyo Electron Ltd |
プラズマ処理装置及びプラズマ処理方法
|
US9793095B2
(en)
*
|
2013-03-14 |
2017-10-17 |
Tokyo Electron Limited |
Microwave surface-wave plasma device
|
US9941126B2
(en)
|
2013-06-19 |
2018-04-10 |
Tokyo Electron Limited |
Microwave plasma device
|
CN103681199A
(zh)
*
|
2013-12-11 |
2014-03-26 |
苏州市奥普斯等离子体科技有限公司 |
一种真空远区等离子体处理装置
|
US11015245B2
(en)
|
2014-03-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Gas-phase reactor and system having exhaust plenum and components thereof
|
US10941490B2
(en)
|
2014-10-07 |
2021-03-09 |
Asm Ip Holding B.V. |
Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
|
US10276355B2
(en)
|
2015-03-12 |
2019-04-30 |
Asm Ip Holding B.V. |
Multi-zone reactor, system including the reactor, and method of using the same
|
JP6479550B2
(ja)
*
|
2015-04-22 |
2019-03-06 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
US10458018B2
(en)
|
2015-06-26 |
2019-10-29 |
Asm Ip Holding B.V. |
Structures including metal carbide material, devices including the structures, and methods of forming same
|
US10211308B2
(en)
|
2015-10-21 |
2019-02-19 |
Asm Ip Holding B.V. |
NbMC layers
|
US11139308B2
(en)
|
2015-12-29 |
2021-10-05 |
Asm Ip Holding B.V. |
Atomic layer deposition of III-V compounds to form V-NAND devices
|
US10529554B2
(en)
|
2016-02-19 |
2020-01-07 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
US10370763B2
(en)
|
2016-04-18 |
2019-08-06 |
Tokyo Electron Limited |
Plasma processing apparatus
|
US10367080B2
(en)
|
2016-05-02 |
2019-07-30 |
Asm Ip Holding B.V. |
Method of forming a germanium oxynitride film
|
US11453943B2
(en)
|
2016-05-25 |
2022-09-27 |
Asm Ip Holding B.V. |
Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
|
US9859151B1
(en)
|
2016-07-08 |
2018-01-02 |
Asm Ip Holding B.V. |
Selective film deposition method to form air gaps
|
US10612137B2
(en)
|
2016-07-08 |
2020-04-07 |
Asm Ip Holdings B.V. |
Organic reactants for atomic layer deposition
|
US9812320B1
(en)
|
2016-07-28 |
2017-11-07 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US9887082B1
(en)
|
2016-07-28 |
2018-02-06 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
KR102532607B1
(ko)
|
2016-07-28 |
2023-05-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 가공 장치 및 그 동작 방법
|
US11532757B2
(en)
|
2016-10-27 |
2022-12-20 |
Asm Ip Holding B.V. |
Deposition of charge trapping layers
|
US10714350B2
(en)
|
2016-11-01 |
2020-07-14 |
ASM IP Holdings, B.V. |
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
KR102546317B1
(ko)
|
2016-11-15 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기체 공급 유닛 및 이를 포함하는 기판 처리 장치
|
KR20180068582A
(ko)
*
|
2016-12-14 |
2018-06-22 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11447861B2
(en)
|
2016-12-15 |
2022-09-20 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
|
US11581186B2
(en)
|
2016-12-15 |
2023-02-14 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus
|
KR20180070971A
(ko)
|
2016-12-19 |
2018-06-27 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US10269558B2
(en)
|
2016-12-22 |
2019-04-23 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
US11390950B2
(en)
|
2017-01-10 |
2022-07-19 |
Asm Ip Holding B.V. |
Reactor system and method to reduce residue buildup during a film deposition process
|
US10468261B2
(en)
|
2017-02-15 |
2019-11-05 |
Asm Ip Holding B.V. |
Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
|
US10529563B2
(en)
|
2017-03-29 |
2020-01-07 |
Asm Ip Holdings B.V. |
Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
|
US10770286B2
(en)
|
2017-05-08 |
2020-09-08 |
Asm Ip Holdings B.V. |
Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
|
KR102408720B1
(ko)
*
|
2017-06-07 |
2022-06-14 |
삼성전자주식회사 |
상부 돔을 포함하는 반도체 공정 챔버
|
US11306395B2
(en)
|
2017-06-28 |
2022-04-19 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
|
KR20190009245A
(ko)
|
2017-07-18 |
2019-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
|
US11018002B2
(en)
|
2017-07-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
|
US11374112B2
(en)
|
2017-07-19 |
2022-06-28 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
US10541333B2
(en)
|
2017-07-19 |
2020-01-21 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
US10590535B2
(en)
|
2017-07-26 |
2020-03-17 |
Asm Ip Holdings B.V. |
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
|
US10692741B2
(en)
|
2017-08-08 |
2020-06-23 |
Asm Ip Holdings B.V. |
Radiation shield
|
US10770336B2
(en)
|
2017-08-08 |
2020-09-08 |
Asm Ip Holding B.V. |
Substrate lift mechanism and reactor including same
|
US11769682B2
(en)
|
2017-08-09 |
2023-09-26 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US11139191B2
(en)
|
2017-08-09 |
2021-10-05 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US11830730B2
(en)
|
2017-08-29 |
2023-11-28 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
US11295980B2
(en)
|
2017-08-30 |
2022-04-05 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
|
KR102491945B1
(ko)
|
2017-08-30 |
2023-01-26 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11056344B2
(en)
|
2017-08-30 |
2021-07-06 |
Asm Ip Holding B.V. |
Layer forming method
|
US10658205B2
(en)
|
2017-09-28 |
2020-05-19 |
Asm Ip Holdings B.V. |
Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
|
US10403504B2
(en)
|
2017-10-05 |
2019-09-03 |
Asm Ip Holding B.V. |
Method for selectively depositing a metallic film on a substrate
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
KR102597978B1
(ko)
|
2017-11-27 |
2023-11-06 |
에이에스엠 아이피 홀딩 비.브이. |
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|
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(ja)
|
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クリーン・ミニエンバイロメントを備える装置
|
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(en)
|
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Asm Ip Holding B. V. |
Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
|
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(zh)
|
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沈積方法
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US11081345B2
(en)
|
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|
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(ja)
|
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2022-08-23 |
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|
US10896820B2
(en)
|
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Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
KR102636427B1
(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US10975470B2
(en)
|
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2021-04-13 |
Asm Ip Holding B.V. |
Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
|
US11473195B2
(en)
|
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Semiconductor processing apparatus and a method for processing a substrate
|
US11629406B2
(en)
|
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2023-04-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
|
US11114283B2
(en)
|
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Asm Ip Holding B.V. |
Reactor, system including the reactor, and methods of manufacturing and using same
|
KR102646467B1
(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US11088002B2
(en)
|
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Substrate rack and a substrate processing system and method
|
US11230766B2
(en)
|
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|
TW202344708A
(zh)
|
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|
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(ko)
|
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|
US11718913B2
(en)
|
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|
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(zh)
|
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|
US11286562B2
(en)
|
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Gas-phase chemical reactor and method of using same
|
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(ko)
|
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|
US10797133B2
(en)
|
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2020-10-06 |
Asm Ip Holding B.V. |
Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
|
US11492703B2
(en)
|
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Asm Ip Holding B.V. |
Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
|
KR20210027265A
(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(en)
|
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|
US10755922B2
(en)
|
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2020-08-25 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US10388513B1
(en)
|
2018-07-03 |
2019-08-20 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US11053591B2
(en)
|
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Multi-port gas injection system and reactor system including same
|
US11430674B2
(en)
|
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Asm Ip Holding B.V. |
Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
US11024523B2
(en)
|
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|
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(ko)
|
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2020-03-20 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11049751B2
(en)
|
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2021-06-29 |
Asm Ip Holding B.V. |
Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
|
CN110970344A
(zh)
|
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2020-04-07 |
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|
US11232963B2
(en)
|
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
USD948463S1
(en)
|
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2022-04-12 |
Asm Ip Holding B.V. |
Susceptor for semiconductor substrate supporting apparatus
|
US11087997B2
(en)
|
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Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
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(ko)
|
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2020-05-13 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11572620B2
(en)
|
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Asm Ip Holding B.V. |
Methods for selectively depositing an amorphous silicon film on a substrate
|
US11031242B2
(en)
|
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2021-06-08 |
Asm Ip Holding B.V. |
Methods for depositing a boron doped silicon germanium film
|
US10818758B2
(en)
|
2018-11-16 |
2020-10-27 |
Asm Ip Holding B.V. |
Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
|
US10847366B2
(en)
|
2018-11-16 |
2020-11-24 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
|
US11217444B2
(en)
|
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Asm Ip Holding B.V. |
Method for forming an ultraviolet radiation responsive metal oxide-containing film
|
KR102636428B1
(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US11158513B2
(en)
|
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2021-10-26 |
Asm Ip Holding B.V. |
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
|
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(ja)
|
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2020-06-18 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
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|
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(zh)
|
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|
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(ko)
|
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2020-07-31 |
에이에스엠 아이피 홀딩 비.브이. |
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|
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(zh)
|
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|
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(zh)
|
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|
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(ko)
|
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2020-08-31 |
에이에스엠 아이피 홀딩 비.브이. |
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|
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(zh)
|
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(zh)
|
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基材處理設備及處理基材之方法
|
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(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
SiOC 층을 포함한 구조체 및 이의 형성 방법
|
US11742198B2
(en)
|
2019-03-08 |
2023-08-29 |
Asm Ip Holding B.V. |
Structure including SiOCN layer and method of forming same
|
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(ko)
|
2019-03-28 |
2020-10-08 |
에이에스엠 아이피 홀딩 비.브이. |
도어 개방기 및 이를 구비한 기판 처리 장치
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
반도체 소자를 제조하는 방법
|
JP7221115B2
(ja)
*
|
2019-04-03 |
2023-02-13 |
東京エレクトロン株式会社 |
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|
US11447864B2
(en)
|
2019-04-19 |
2022-09-20 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
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(ko)
|
2019-04-24 |
2020-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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2020-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
비정질 탄소 중합체 막을 개질하는 방법
|
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(ko)
|
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2020-11-19 |
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표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
|
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(ja)
|
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2020-11-19 |
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ウェハボートハンドリング装置、縦型バッチ炉および方法
|
USD975665S1
(en)
|
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2023-01-17 |
Asm Ip Holding B.V. |
Susceptor shaft
|
USD947913S1
(en)
|
2019-05-17 |
2022-04-05 |
Asm Ip Holding B.V. |
Susceptor shaft
|
USD935572S1
(en)
|
2019-05-24 |
2021-11-09 |
Asm Ip Holding B.V. |
Gas channel plate
|
USD922229S1
(en)
|
2019-06-05 |
2021-06-15 |
Asm Ip Holding B.V. |
Device for controlling a temperature of a gas supply unit
|
KR20200141003A
(ko)
|
2019-06-06 |
2020-12-17 |
에이에스엠 아이피 홀딩 비.브이. |
가스 감지기를 포함하는 기상 반응기 시스템
|
KR20200143254A
(ko)
|
2019-06-11 |
2020-12-23 |
에이에스엠 아이피 홀딩 비.브이. |
개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
|
USD944946S1
(en)
|
2019-06-14 |
2022-03-01 |
Asm Ip Holding B.V. |
Shower plate
|
USD931978S1
(en)
|
2019-06-27 |
2021-09-28 |
Asm Ip Holding B.V. |
Showerhead vacuum transport
|
KR20210005515A
(ko)
|
2019-07-03 |
2021-01-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
|
JP2021015791A
(ja)
|
2019-07-09 |
2021-02-12 |
エーエスエム アイピー ホールディング ビー.ブイ. |
同軸導波管を用いたプラズマ装置、基板処理方法
|
CN112216646A
(zh)
|
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2021-01-12 |
Asm Ip私人控股有限公司 |
基板支撑组件及包括其的基板处理装置
|
KR20210010307A
(ko)
|
2019-07-16 |
2021-01-27 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
KR20210010816A
(ko)
|
2019-07-17 |
2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
라디칼 보조 점화 플라즈마 시스템 및 방법
|
KR20210010820A
(ko)
|
2019-07-17 |
2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 게르마늄 구조를 형성하는 방법
|
US11643724B2
(en)
|
2019-07-18 |
2023-05-09 |
Asm Ip Holding B.V. |
Method of forming structures using a neutral beam
|
CN112242296A
(zh)
|
2019-07-19 |
2021-01-19 |
Asm Ip私人控股有限公司 |
形成拓扑受控的无定形碳聚合物膜的方法
|
TW202113936A
(zh)
|
2019-07-29 |
2021-04-01 |
荷蘭商Asm Ip私人控股有限公司 |
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|
CN112309900A
(zh)
|
2019-07-30 |
2021-02-02 |
Asm Ip私人控股有限公司 |
基板处理设备
|
CN112309899A
(zh)
|
2019-07-30 |
2021-02-02 |
Asm Ip私人控股有限公司 |
基板处理设备
|
US11587815B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
US11227782B2
(en)
|
2019-07-31 |
2022-01-18 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
US11587814B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
CN112323048B
(zh)
|
2019-08-05 |
2024-02-09 |
Asm Ip私人控股有限公司 |
用于化学源容器的液位传感器
|
USD965524S1
(en)
|
2019-08-19 |
2022-10-04 |
Asm Ip Holding B.V. |
Susceptor support
|
USD965044S1
(en)
|
2019-08-19 |
2022-09-27 |
Asm Ip Holding B.V. |
Susceptor shaft
|
JP2021031769A
(ja)
|
2019-08-21 |
2021-03-01 |
エーエスエム アイピー ホールディング ビー.ブイ. |
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|
USD949319S1
(en)
|
2019-08-22 |
2022-04-19 |
Asm Ip Holding B.V. |
Exhaust duct
|
KR20210024423A
(ko)
|
2019-08-22 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
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|
USD979506S1
(en)
|
2019-08-22 |
2023-02-28 |
Asm Ip Holding B.V. |
Insulator
|
USD940837S1
(en)
|
2019-08-22 |
2022-01-11 |
Asm Ip Holding B.V. |
Electrode
|
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(en)
|
2019-08-22 |
2021-09-14 |
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Gas distributor
|
KR20210024420A
(ko)
|
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2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11286558B2
(en)
|
2019-08-23 |
2022-03-29 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
|
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(ko)
|
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2021-03-15 |
에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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2021-03-16 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11562901B2
(en)
|
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Substrate processing method
|
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(zh)
|
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|
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(zh)
|
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|
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|
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|
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|
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|
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(en)
|
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Methods for selective deposition of doped semiconductor material
|
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(ko)
|
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|
US11646205B2
(en)
|
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2023-05-09 |
Asm Ip Holding B.V. |
Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US11501968B2
(en)
|
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Asm Ip Holding B.V. |
Method for providing a semiconductor device with silicon filled gaps
|
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(ko)
|
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|
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(ko)
|
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|
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(zh)
|
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|
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(zh)
|
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|
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(zh)
|
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|
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(ja)
|
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エーエスエム アイピー ホールディング ビー.ブイ. |
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|
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|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US11885013B2
(en)
|
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Asm Ip Holding B.V. |
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|
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(ko)
|
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|
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|
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|
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|
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|
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|
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|
US11776846B2
(en)
|
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Asm Ip Holding B.V. |
Methods for depositing gap filling fluids and related systems and devices
|
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(zh)
|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
US11821078B2
(en)
|
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Method for forming precoat film and method for forming silicon-containing film
|
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|
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|
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|
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|
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|
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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|
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Foup 핸들러를 이용한 foup의 빠른 교환
|
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|
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(en)
|
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|
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(en)
|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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(en)
|
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|
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|
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|
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*
|
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|
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(en)
|
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|
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|
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|
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|
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|
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|
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|
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(ja)
*
|
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|