JP2008500457A - スパッタ反応装置内で金属バリアを形成するために特にマルチステッププロセスで使用される可変四重電磁石アレー - Google Patents
スパッタ反応装置内で金属バリアを形成するために特にマルチステッププロセスで使用される可変四重電磁石アレー Download PDFInfo
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
【選択図】 図8
Description
J=ρv−D∇n
は、イオン流出密度であり、
ρ=qn
は、電荷密度である。
Claims (49)
- 真空チャンバの中心軸に対して垂直な面内に配設された基板支持体を有するプラズマ処理反応装置における、前記中心軸を中心に配置された個別に制御可能な電磁石コイルのアレーであって、コイルのうちの少なくとも2つが中心軸から異なる半径で配設されているアレー(array)。
- 矩形パターンで配置された4つのコイルを有する、請求項1に記載のアレー。
- 前記基板支持体の近くに位置された前記コイルのうちの2つが、前記基板支持体から更に離れて位置された前記コイルのうちの径方向で対応する2つよりも少なくとも50%多い巻回部を有する、請求項2に記載のアレー。
- 前記少なくとも2つのコイル間に配設された磁気コアを更に備える、請求項1に記載のアレー。
- 前記反応装置が、前記中心軸に沿って前記基板支持体と対向して配置されたスパッタリングターゲットを含む、請求項1に記載のアレー。
- 前記ターゲットと前記基板支持体との間で前記チャンバの一部を形成するアダプタ中に組み込まれている、請求項5に記載のアレー。
- 前記コイルのうちの少なくとも2つと熱的に接触するマルチラップ冷却コイルを更に備える、請求項1に記載のアレー。
- 前記少なくとも2つのコイル中の電流が前記中心軸を中心に反対方向で循環する、請求項1に記載のアレー。
- 前記電流の前記レベルが、前記チャンバの外側の浮遊磁場を減少させるように選択される、請求項8に記載のアレー。
- アセンブリ内に固定された電磁石コイルのアレーであって、前記コイルの全ての両端部が前記アセンブリの外側で利用できるアレー。
- 前記電磁石コイルが前記アセンブリ内で接着剤により固定される、請求項10に記載のアレー。
- 矩形のアレーで配置され且つ軸を中心に巻回された4つの前記電磁石コイルを備える、請求項10に記載のアレー。
- 磁気コアが、前記電磁石コイルのうちの径方向内側のコイルを前記電磁石コイルのうちの径方向外側のコイルから分離する、請求項12に記載のアレー。
- 1つの軸を中心とする矩形パターンの環状アセンブリの形態を成す4つの電磁石コイルを備えるとともに、プラズマ処理反応装置の壁部の外側周囲に配設されるように構成された四重アレー。
- 前記コイルのうちの径方向内側のコイルと前記コイルのうちの径方向外側のコイルとの間に配設された磁気コアを更に備える、請求項14に記載のアレー。
- 前記コイルの全てが、コイル間に磁場を形成できるように、前記アセンブリ内で互いに分離されている、請求項15に記載のアレー。
- 前記4つの電磁石コイルと熱的に接触する、1つの螺旋状に巻き付けられた流体冷却螺旋巻回コイルを更に備える、請求項14に記載のアレー。
- 前記コイルの全てが、コイル間に磁場を形成できるように、前記アセンブリ内で互いに分離されている、請求項14に記載のアレー。
- 前記電磁石コイルが周囲に巻き付けられ且つ前記プラズマ処理反応装置の真空チャンバの一部を形成するように構成されたアダプタを更に備える、請求項14に記載のアレー。
- プラズマ処理反応装置であって、
中心軸を中心に略対称的に配置されたチャンバ本体と、
その前面がプラズマ処理される基板を前記反応装置内で支持するための支持体と、
前記前面の上側に偏位した軸方向距離において且つ前記中心軸からの少なくとも2つの半径において前記チャンバ本体の周りに巻き付けられ、そのうちの少なくとも幾つかが独立に給電可能である複数の電磁石のアレーと、
を備えるプラズマ処理反応装置。 - 前記アレーが、三角形アレーとして配置される3つの前記電磁石を備える、請求項20に記載の反応装置。
- 前記アレーが、矩形アレーとして配置される4つの前記電磁石を備える、請求項20に記載の反応装置。
- 前記4つの電磁石の対向する端部に対する8個の接近可能で且つ再構成可能な電気接続部を含む端子構造体を更に備える、請求項24に記載の反応装置。
- 前記チャンバに固定され且つ前記中心軸を中心に配置されたスッパタリングターゲットを更に備える、請求項22に記載の反応装置。
- 前記中心軸に沿って前記アレーに重なるように配設されたRFコイルを更に備える、請求項24に記載の反応装置。
- 前記チャンバに固定され且つ前記中心軸を中心に配置されたスッパタリングターゲットを更に備える、請求項21に記載の反応装置。
- 前記中心軸に沿って前記アレーに重なるように配設されたRFコイルを更に備える、請求項26に記載の反応装置。
- アダプタ及び電磁石アセンブリであって、
中心軸を略中心に配置され且つプラズマ処理チャンバに対して真空密閉されるように構成されたアダプタ本体であって、前記中心軸が処理される基板の表面に対して垂直であるアダプタ本体と、
前記中心軸からの少なくとも2つの半径において前記アダプタ本体の外面上に巻き付けられる複数の電磁石コイルであって、各コイルが前記コイルの外部から接近可能な2つのリード線を有する複数の電磁石コイルと、
を備えるアダプタ及び電磁石アセンブリ - 前記中心軸を中心に矩形パターンで配置された4つの前記電磁石コイルを備える、請求項28に記載のアセンブリ。
- 前記コイルのうちの内側の2つと前記コイルのうちの外側の2つとの間に配置される管状スペーサを更に備える、請求項28に記載のアセンブリ。
- 中心軸周りに配置され、前記4つの電磁石のうちの少なくとも2つとその径方向外側で接触する本体に形成された流体冷却チャンネルを更に備える、請求項28に記載のアセンブリ。
- 前記本体が、アルミニウムを備える、請求項30に記載のアセンブリ。
- 前記本体が、内部に前記冷却チャンネルが形成された螺旋状に巻き付けられた矩形部材を備える、請求項30に記載のアセンブリ。
- 中心軸を中心に配置されたチャンバと、処理される基板を支持するための基板支持体と、前記チャンバの近傍で前記中心軸を中心に巻き付けられた複数の電磁石コイルのアレーとを含むプラズマ反応装置を動作させる方法であって、
前記基板を処理するために前記コイルのうちの少なくとも2つを通じて共回転電流を流す工程を含む第1のステップと、
前記基板を処理するために前記少なくとも2つのコイルを通じて逆回転電流を流す工程を含む第2のステップと、
を備える方法 - 前記反応装置が、前記基板支持体と対向して配置されるスパッタリングターゲットを含むスパッタリングチャンバであり、これらの間で前記コイルが軸方向に配設される、請求項34に記載の方法。
- 前記ステップのうちの少なくとも一方が、前記ターゲットの材料を前記基板上にスパッタ堆積させる工程を含む、請求項35に記載の方法。
- 前記アレーが矩形アレーを成す4つのコイルを備える、請求項36に記載の方法。
- 第3のステップが、前記コイルのうちの上側コイル及び下側コイルを通じて逆回転電流を流す工程を含み、第4のステップが、前記コイルのうちの内側コイル及び外側コイルを通じて逆回転電流を流す工程を含む、請求項34に記載の方法。
- 中心軸周りに配置されたチャンバと、ターゲットと、前記中心軸を中心に巻回された少なくとも1つの電磁石コイルと、前記中心軸を中心に配置されたRFコイルと、前記ターゲットと対向して基板を支持するためのバイアス可能なペデスタルとを含むマグネトロンスパッタ反応装置におけるマルチステッププロセスであって、前記マルチステッププロセスの異なるステップ間で、(1)前記ターゲットに印加されるDC電力と、(2)前記電磁石コイルに印加される電流と、(3)前記RFコイルに印加されるRF電力と、(4)前記ペデスタル電極に印加されるバイアス電力と、を変えるマルチステッププロセス。
- 前記ステップのうちの一方が、前記ターゲットに印加される前記DC電力を用いてプラズマを励起して、前記ターゲットからの材料を前記基板上にスパッタする工程を含み、前記ステップのうちの別のステップが、前記RFコイルに印加される前記RF電力により生成されるアルゴンプラズマを励起して前記基板をエッチングする工程を含む、請求項39に記載のプロセス。
- 前記ターゲットがタンタルを備える、請求項39に記載のプロセス。
- 前記反応装置が、前記中心軸を中心に回転可能なマグネトロンを更に含み、前記マルチステッププロセスが、前記異なるステップ間で、前記中心軸からの前記マグネトロンの径方向位置を変える工程を更に備える、請求項39に記載のプロセス。
- スパッタチャンバ内で行なわれるとともに、耐熱金属を備えるターゲットと対向して前記チャンバ内のペデスタル電極上に置かれた基板の誘電体層中に形成されるホール内にバリア層を堆積させるプロセスであって、
連続的に、
(a)窒化物堆積ステップであって、
前記ターゲットに第1のレベルのDC電力を印加してプラズマを励起することにより前記ターゲットをスパッタする工程と、
第1のレベルのRF電力を前記ペデスタル電極に対して印加する工程と、
2つの軸方向位置で前記軸を中心に巻回された2つの第1の電磁石コイルに給電して、対向する磁場を生成する工程と、
前記チャンバ内に窒素ガスを流して、前記耐熱金属の窒化物を前記基板上に形成する工程と、含む前記窒化物堆積ステップと、
(b)耐熱金属堆積ステップであって、
第2のレベルのDC電力を前記ターゲットに印加してプラズマを励起することにより前記ターゲットをスパッタする工程と、
第2のレベルのRF電力を前記ペデスタル電極に対して印加する工程と、
前記2つの第1の電磁石コイルに給電して、対向する磁場を生成する工程と、
前記チャンバ内に窒素ガスを流すことを実質的に中止する工程と、を含む前記耐熱金属堆積ステップと、
(c)エッチングステップであって、
前記チャンバ内にアルゴンを流す工程と、
前記RFコイルにRF電力を印加して、前記アルゴンをプラズマへと励起する工程と、
2つの軸方向位置で前記軸を中心に巻回された2つの第2の電磁石コイルに給電して、対向する磁場を生成する工程と、
第3のレベルのRF電力を前記ペデスタル電極に対して印加する工程と、を含む前記エッチングステップと、
が行なわれる、前記プロセス。 - (d)フラッシュ堆積ステップであって、
前記第1及び第2のレベルのDC電力よりも小さいレベルのDC電力を前記ターゲットに印加して、前記ターゲットをスパッタする工程と、
前記2つの第1の電磁石コイルに給電して、対向する磁場を生成する工程と、
前記第1、第2、第3のレベルのRF電力よりも小さい第4のレベルのRF電力を前記ペデスタル電極に印加する工程と、
を含む前記フラッシュ堆積ステップをその後に備える、請求項43に記載のプロセス。 - 前記ペデスタル電極に印加される前記第2のレベルのRF電力が、前記第1及び第3のレベルのRF電力よりも小さい、請求項43に記載のプロセス。
- 前記エッチングステップが、第1及び第2のレベルのDC電力の10%未満のレベルのDC電力を前記ターゲットに対して印加する工程を含む、請求項43に記載のプロセス。
- 前記エッチングステップが、DC電力を前記RF電極に印加する工程を含む、請求項46に記載のプロセス。
- 前記耐熱金属がタンタルを含む、請求項46に記載のプロセス。
- 前記窒化物堆積ステップ及び耐熱金属堆積ステップが、第1の半径で前記中心軸を中心にマグネトロンを回転させて前記ターゲットの外側部分を優先的にスパッタする工程を含み、前記エッチングステップが、前記第1の半径よりも小さい第2の半径で前記中心軸を中心に前記マグネトロンを回転させる工程を含む、請求項43に記載のプロセス。
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KR20160074666A (ko) * | 2013-10-24 | 2016-06-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 물리 기상 증착 챔버에서 활용되는 바이폴라 콜리메이터 |
JP2016540115A (ja) * | 2013-10-24 | 2016-12-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 物理的気相堆積チャンバで利用される双極性コリメータ |
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JP2021523984A (ja) * | 2018-05-09 | 2021-09-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 物理的気相堆積チャンバ内電磁石 |
JP2022179687A (ja) * | 2018-05-09 | 2022-12-02 | アプライド マテリアルズ インコーポレイテッド | 物理的気相堆積チャンバ内電磁石 |
JP7199515B2 (ja) | 2018-05-09 | 2023-01-05 | アプライド マテリアルズ インコーポレイテッド | 物理的気相堆積チャンバ内電磁石 |
Also Published As
Publication number | Publication date |
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CN1950538A (zh) | 2007-04-18 |
KR20070015937A (ko) | 2007-02-06 |
US20050263390A1 (en) | 2005-12-01 |
KR100927275B1 (ko) | 2009-11-18 |
WO2005118907A1 (en) | 2005-12-15 |
CN1950538B (zh) | 2014-05-07 |
US20100155223A1 (en) | 2010-06-24 |
JP5291338B2 (ja) | 2013-09-18 |
EP1774054A1 (en) | 2007-04-18 |
US8871064B2 (en) | 2014-10-28 |
US7686926B2 (en) | 2010-03-30 |
EP1774054A4 (en) | 2010-01-27 |
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