JP6336945B2 - スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ - Google Patents
スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 title claims description 190
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- 239000010949 copper Substances 0.000 claims description 182
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- 238000011049 filling Methods 0.000 claims description 18
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
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- 229910000881 Cu alloy Inorganic materials 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3457—Sputtering using other particles than noble gas ions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- Physical Vapour Deposition (AREA)
Description
[001]本出願は、2000年10月10日に出願された係属中の出願第09/685,978号の一部継続出願、(米国特許第6,398,929号として発行された)1999年10月8日に出願された出願第09/414,614号の分割出願であり、また、(2001年8月30日に出願された仮出願第60/316,137号、および2001年12月21日に出願された同第60/342,608号に対して優先権を主張する)2002年7月25日に出願された係属中の出願第10/202,778号の一部継続出願であり、また、2001年11月14日に出願された係属中の出願第09/993,543号の一部継続出願であり、これら全体を本願明細書に組み入れる。
[0028]本発明の一実施形態は、ロングスロースパッタリング、自己イオン化プラズマ(SIP)スパッタリング、誘導結合プラズマ(ICP)再スパッタリング及びコイルスパッタリングを1つのチャンバ内で組み合わせることにより、タンタルまたはタンタルナイトライド等のライナー材料をスパッタ堆積するように注力されている。ロングスロースパッタリングは、ターゲット・基板間の距離と、該基板の直径との比較的高い比を特徴とする。ロングスローSIPスパッタリングは、イオン化された及び中性の堆積材料成分の両方の深いホール被覆を促進する。ICP再スパッタリングは、深いホールを覆う層底部の厚さを低減して、接触抵抗を低減することができる。ICP再スパッタリングの間、ICPコイルスパッタリングは、特に、再スパッタリングによる薄膜化は好ましくないホール開口部に隣接しているような領域上に、保護層を堆積することができる。
[0036]DCマグネトロンスパッタリングリアクタにおける側壁被覆性と底部被覆性との間の配分は、絶縁層中のホールまたはビアにおいて所望の断面を有するライナー層等のメタル層を形成するように調整することができる。高アスペクト比のビア内にスパッタ堆積したSIP膜は、有利な上方側壁被覆性を有することが可能であり、オーバーハングを生じる傾向はない。所望する場合には、底部被覆は、上記ビアの底部のICP再スパッタリングによって薄くまたは排除してもよい。本発明の一つの態様によれば、両スパッタリングの利点は、別々の工程でもよいSIP及びICPの両プラズマ生成方法のうちの選択した態様を組み合わせるリアクタにおいて得ることができる。このようなリアクタの実施例を、図4に符号150で示す。また、ライナー層の側壁の上方部分は、コイル材を基板上に配置するためにチャンバ内に配設されたICPコイル151をスパッタリングすることによる再スパッタリングから保護してもよい。
Claims (11)
- 少なくとも4:1のアスペクト比を有し、かつ基板の絶縁層内に形成されたホール内に金属を堆積する方法であって、
金属を含む堆積材料を、チャンバ内の誘導結合プラズマ中で、前記ホール内にスパッタ堆積することと、
金属を含む堆積材料を、チャンバ内の自己イオン化したプラズマ中で、前記ホール内にスパッタ堆積することとを含み、
前記自己イオン化したプラズマ中でのスパッタ堆積、および前記誘導結合プラズマ中でのスパッタ堆積は、同じチャンバ内で行われる方法。 - 前記ホールを金属で充填することを更に含む、請求項1に記載の方法。
- 前記充填は、電気メッキを含む、請求項2に記載の方法。
- 前記自己イオン化したプラズマ中でのスパッタ堆積は、前記誘導結合プラズマ中でのスパッタ堆積に先行する、請求項1に記載の方法。
- 前記誘導結合プラズマ中でのスパッタ堆積は、前記自己イオン化したプラズマ中で堆積した堆積材料を、前記誘導結合プラズマ中で再スパッタリングすることを更に含む、請求項4に記載の方法。
- 前記再スパッタリングは、前記ホールの底部に堆積した堆積材料を除去することを含む、請求項5に記載の方法。
- 前記自己イオン化したプラズマ中でのスパッタ堆積は、タンタルおよびタンタルナイトライドのうちの少なくとも一つを含む堆積材料を堆積する、請求項1に記載の方法。
- 前記自己イオン化したプラズマ中でのスパッタ堆積は、銅を含む堆積材料を堆積する、請求項1に記載の方法。
- 前記誘導結合プラズマ中でのスパッタ堆積は、タンタルおよびタンタルナイトライドうちの少なくとも一つを含む堆積材料を堆積する、請求項1に記載の方法。
- 前記誘導結合プラズマ中でのスパッタ堆積は、銅を含む堆積材料を堆積する、請求項1に記載の方法。
- 前記誘導結合プラズマ中でのスパッタ堆積は、前記誘導結合プラズマを形成するために前記誘導結合プラズマを含む前記チャンバ内部のコイルとのRF誘導結合を少なくとも部分的に用いる、請求項1に記載の方法。
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US09/993,543 US6610184B2 (en) | 2001-11-14 | 2001-11-14 | Magnet array in conjunction with rotating magnetron for plasma sputtering |
US09/993,543 | 2001-11-14 | ||
US34260801P | 2001-12-21 | 2001-12-21 | |
US60/342,608 | 2001-12-21 | ||
US10/202,778 | 2002-07-25 | ||
US10/202,778 US20030116427A1 (en) | 2001-08-30 | 2002-07-25 | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
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CN101847598B (zh) | 2012-06-20 |
CN1656243A (zh) | 2005-08-17 |
JP2015201662A (ja) | 2015-11-12 |
JP2013189711A (ja) | 2013-09-26 |
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