KR970002891A - 브이씨알 헤드의 박막 증착용 스퍼터링 장치 - Google Patents

브이씨알 헤드의 박막 증착용 스퍼터링 장치 Download PDF

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Publication number
KR970002891A
KR970002891A KR1019950017788A KR19950017788A KR970002891A KR 970002891 A KR970002891 A KR 970002891A KR 1019950017788 A KR1019950017788 A KR 1019950017788A KR 19950017788 A KR19950017788 A KR 19950017788A KR 970002891 A KR970002891 A KR 970002891A
Authority
KR
South Korea
Prior art keywords
top plate
thin film
sputtering device
film deposition
head
Prior art date
Application number
KR1019950017788A
Other languages
English (en)
Inventor
김범진
Original Assignee
배순훈
대우전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 배순훈, 대우전자 주식회사 filed Critical 배순훈
Priority to KR1019950017788A priority Critical patent/KR970002891A/ko
Priority to JP8163925A priority patent/JPH0925573A/ja
Priority to CN96105322A priority patent/CN1141353A/zh
Publication of KR970002891A publication Critical patent/KR970002891A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Magnetic Heads (AREA)

Abstract

본 발명은 브이씨알 헤드의 박막 증착용 스퍼터링 장치에 관한 것으로서, 전자를 방출시키는 빽판(40)과, 빽판(40)에 자기장을 형성시키는 자석(30)으로 구성된 스퍼터링 장치에 있어서, 상기 빽판(40)의 저면에 부착된 타켓(50)에 균일하게 아르곤 이온(110)을 충돌시켜 많은 량의 규소를 박리시키기 위해 빽판(40)의 배면에 회전축(61)을 고정시킨 회전모터(60)를 설치하여 빽판(40)을 일정 속도로 회전시키도록 구성된 것을 특징으로 하는 브이씨알 헤드의 박막 증착용 스퍼터링 장치인 바 페라이트 상에 고른 균일도와 두께를 쉽게 조절시킨 규소 박막을 증착시킴으로써 양질의 자기헤드를 제조하도록 해주는 것이다.

Description

브이씨알 헤드의 박막 증착용 스퍼터링 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 박막 증착용 스퍼터링 장치의 구성도, 제2도는 본 발명에 따른 박막 증착용 스퍼터링 장치의 구성도.

Claims (1)

  1. 전자를 방출시키는 빽판(40)과, 빽판(40)에 자기장을 형성시키는 자석(30)으로 구성된 스퍼터링 장치에 있어서, 상기 빽판(40)의 저면에 부착된 타켓(50)에 균일하게 아르곤 이온(110)을 충돌시켜 많은 량의 규소를 박리시키기 위해 빽판(40)의 배면에 회전축(61)을 고정시킨 회전모터(60)를 설치하여 빽판(40)을 일정 속도로 회전시키도록 구성된 것을 특징으로 하는 브이씨알 헤드의 박막 증착용 스퍼터링 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950017788A 1995-06-28 1995-06-28 브이씨알 헤드의 박막 증착용 스퍼터링 장치 KR970002891A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950017788A KR970002891A (ko) 1995-06-28 1995-06-28 브이씨알 헤드의 박막 증착용 스퍼터링 장치
JP8163925A JPH0925573A (ja) 1995-06-28 1996-06-04 スパッタリング装置
CN96105322A CN1141353A (zh) 1995-06-28 1996-06-04 在基底上喷镀材料用的溅射装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017788A KR970002891A (ko) 1995-06-28 1995-06-28 브이씨알 헤드의 박막 증착용 스퍼터링 장치

Publications (1)

Publication Number Publication Date
KR970002891A true KR970002891A (ko) 1997-01-28

Family

ID=19418503

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950017788A KR970002891A (ko) 1995-06-28 1995-06-28 브이씨알 헤드의 박막 증착용 스퍼터링 장치

Country Status (3)

Country Link
JP (1) JPH0925573A (ko)
KR (1) KR970002891A (ko)
CN (1) CN1141353A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200108651A (ko) * 2019-03-11 2020-09-21 한국원자력연구원 광물 탄산화 방법 및 장치

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6610184B2 (en) * 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
KR100993046B1 (ko) * 2001-11-14 2010-11-08 어플라이드 머티어리얼스, 인코포레이티드 스퍼터링 및 재스퍼터링을 위한 자기-이온화 및 유도 결합플라즈마
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
JP4924835B2 (ja) * 2005-02-02 2012-04-25 日立金属株式会社 マグネトロンスパッタリング用磁気回路装置及びその製造方法
US20120048723A1 (en) * 2010-08-24 2012-03-01 Varian Semiconductor Equipment Associates, Inc. Sputter target feed system
CN102437004A (zh) * 2010-09-29 2012-05-02 Snu精密股份有限公司 溅射装置
JP5081315B2 (ja) * 2011-02-23 2012-11-28 株式会社神戸製鋼所 アーク式蒸発源
JP5081320B2 (ja) * 2011-02-23 2012-11-28 株式会社神戸製鋼所 アーク式蒸発源
CA2824749C (en) * 2011-02-23 2016-04-26 Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) Arc evaporation source
JP5081327B1 (ja) * 2011-04-25 2012-11-28 株式会社神戸製鋼所 アーク式蒸発源
JP6580113B2 (ja) * 2017-12-05 2019-09-25 キヤノントッキ株式会社 スパッタ装置及びその制御方法
WO2021052497A1 (zh) * 2019-09-20 2021-03-25 深圳市晶相技术有限公司 一种半导体设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200108651A (ko) * 2019-03-11 2020-09-21 한국원자력연구원 광물 탄산화 방법 및 장치

Also Published As

Publication number Publication date
JPH0925573A (ja) 1997-01-28
CN1141353A (zh) 1997-01-29

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