ATE382721T1 - Magnetronsputtervorrichtung in form eines bleches - Google Patents

Magnetronsputtervorrichtung in form eines bleches

Info

Publication number
ATE382721T1
ATE382721T1 AT98932581T AT98932581T ATE382721T1 AT E382721 T1 ATE382721 T1 AT E382721T1 AT 98932581 T AT98932581 T AT 98932581T AT 98932581 T AT98932581 T AT 98932581T AT E382721 T1 ATE382721 T1 AT E382721T1
Authority
AT
Austria
Prior art keywords
disk
sputtering
magnetic field
chamber
sputtering chamber
Prior art date
Application number
AT98932581T
Other languages
English (en)
Inventor
Jiro Ikeda
Kyoji Kinokiri
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Application granted granted Critical
Publication of ATE382721T1 publication Critical patent/ATE382721T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Cleaning Implements For Floors, Carpets, Furniture, Walls, And The Like (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Manufacturing Of Printed Wiring (AREA)
AT98932581T 1997-07-18 1998-07-17 Magnetronsputtervorrichtung in form eines bleches ATE382721T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09193530A JP3096258B2 (ja) 1997-07-18 1997-07-18 毎葉式マグネトロンスパッタ装置

Publications (1)

Publication Number Publication Date
ATE382721T1 true ATE382721T1 (de) 2008-01-15

Family

ID=16309613

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98932581T ATE382721T1 (de) 1997-07-18 1998-07-17 Magnetronsputtervorrichtung in form eines bleches

Country Status (9)

Country Link
US (1) US6083364A (de)
EP (1) EP0933444B1 (de)
JP (1) JP3096258B2 (de)
KR (1) KR100378752B1 (de)
CN (1) CN1173071C (de)
AT (1) ATE382721T1 (de)
DE (1) DE69838937T2 (de)
TW (1) TW520403B (de)
WO (1) WO1999004058A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001053561A1 (de) * 2000-01-18 2001-07-26 Unaxis Balzers Ag Sputterkammer sowie vakuumtransportkammer und vakuumbehandlungsanlagen mit solchen kammern
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
US6740209B2 (en) * 2001-07-27 2004-05-25 Anelva Corporation Multilayer film deposition apparatus, and method and apparatus for manufacturing perpendicular-magnetic-recording media
US6776887B2 (en) * 2002-03-29 2004-08-17 Imation Corp. Method and apparatus for thin film center shielding
JP2003293131A (ja) * 2002-04-04 2003-10-15 Tdk Corp スパッタリング装置、スパッタリングによる薄膜形成方法および当該装置を用いたディスク状記録媒体の製造方法
TWI396766B (zh) * 2005-03-11 2013-05-21 Soleras Advanced Coatings Nv 用於支承可旋轉濺射目標的扁平端塊
JP4412293B2 (ja) * 2006-02-08 2010-02-10 セイコーエプソン株式会社 スパッタ装置
WO2018113904A1 (en) * 2016-12-19 2018-06-28 Applied Materials, Inc. Sputter deposition source and method of depositing a layer on a substrate
JP6301044B1 (ja) 2017-08-21 2018-03-28 堺ディスプレイプロダクト株式会社 蒸着装置、蒸着方法及び有機ｅｌ表示装置の製造方法
JP6514381B2 (ja) * 2018-02-27 2019-05-15 堺ディスプレイプロダクト株式会社 蒸着装置、蒸着方法及び有機ｅｌ表示装置の製造方法
JP7326106B2 (ja) * 2019-10-16 2023-08-15 株式会社アルバック スパッタリング装置
CN114166590B (zh) * 2021-11-15 2022-07-15 哈尔滨工业大学（威海） 一种用于介观尺度试样力学性能测试的磁控溅射设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61213368A (ja) * 1985-03-20 1986-09-22 Hitachi Maxell Ltd 真空成膜装置
JPH01294242A (ja) * 1988-02-22 1989-11-28 Seiko Epson Corp 光記録媒体の製造方法
JPH062136A (ja) * 1992-06-23 1994-01-11 Toshiba Corp 枚葉式成膜装置
JPH0734927Y2 (ja) * 1992-09-02 1995-08-09 中外炉工業株式会社 マグネットチャック式基板ホルダー
JP3631246B2 (ja) * 1992-09-30 2005-03-23 アドバンスド エナージィ インダストリーズ，インコーポレイテッド 形状的に精密な薄膜フィルムコーティングシステム
JPH06116721A (ja) * 1992-10-06 1994-04-26 Nec Yamaguchi Ltd スパッタリング装置
DE4302851A1 (de) * 1993-02-02 1994-08-04 Leybold Ag Vorrichtung zum Anbringen und/oder Entfernen einer Maske an einem Substrat
JPH0757233A (ja) * 1993-08-19 1995-03-03 Hitachi Ltd 磁気記録媒体
JP3398452B2 (ja) * 1994-01-19 2003-04-21 株式会社ソニー・ディスクテクノロジー スパッタリング装置
US5800687A (en) * 1996-04-13 1998-09-01 Singulus Technologies Gmbh Device for masking or covering substrates
US5863399A (en) * 1996-04-13 1999-01-26 Singulus Technologies Gmbh Device for cathode sputtering
JPH09310167A (ja) * 1996-05-21 1997-12-02 Toshiba Corp 枚葉式マグネトロンスパッタリング装置
JPH10121225A (ja) * 1996-10-09 1998-05-12 Shibaura Eng Works Co Ltd マスクの着脱装置

Also Published As

Publication number Publication date
CN1234838A (zh) 1999-11-10
KR20000068592A (ko) 2000-11-25
KR100378752B1 (ko) 2003-04-07
CN1173071C (zh) 2004-10-27
JP3096258B2 (ja) 2000-10-10
TW520403B (en) 2003-02-11
US6083364A (en) 2000-07-04
EP0933444A4 (de) 2004-05-26
JPH1136075A (ja) 1999-02-09
DE69838937D1 (de) 2008-02-14
EP0933444B1 (de) 2008-01-02
DE69838937T2 (de) 2008-12-24
EP0933444A1 (de) 1999-08-04
WO1999004058A1 (fr) 1999-01-28

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