JP2021523984A - 物理的気相堆積チャンバ内電磁石 - Google Patents
物理的気相堆積チャンバ内電磁石 Download PDFInfo
- Publication number
- JP2021523984A JP2021523984A JP2021512361A JP2021512361A JP2021523984A JP 2021523984 A JP2021523984 A JP 2021523984A JP 2021512361 A JP2021512361 A JP 2021512361A JP 2021512361 A JP2021512361 A JP 2021512361A JP 2021523984 A JP2021523984 A JP 2021523984A
- Authority
- JP
- Japan
- Prior art keywords
- coil portion
- chamber
- vacuum
- pvd
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005240 physical vapour deposition Methods 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 45
- 238000000151 deposition Methods 0.000 claims description 35
- 230000008021 deposition Effects 0.000 claims description 32
- 238000005477 sputtering target Methods 0.000 claims description 20
- 238000005192 partition Methods 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 5
- 239000000110 cooling liquid Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 30
- 239000002826 coolant Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- -1 aluminum (Al) Chemical class 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (15)
- 真空処理チャンバであって、
スパッタリングターゲットと、
基板を前記スパッタリングターゲットに隣接して位置付けるように構成された、前記真空処理チャンバ内に配設された基板支持体と、
前記真空処理チャンバ内に配設された堆積シールドと、
前記真空処理チャンバ内に配設され、前記ターゲットの表面、前記基板支持体の表面、および前記堆積シールドの内面によって境界を定められた処理領域と、
電磁石のコイル部分であり、前記コイル部分が前記真空処理チャンバ内で前記処理領域の外に配設される、電磁石のコイル部分と
を含む真空処理チャンバ
を含む物理的気相堆積(PVD)システム。 - 前記コイル部分が配設される環状構造をさらに含み、前記環状構造が、前記真空処理チャンバ内で前記処理領域の外に配設される、請求項1に記載のPVDシステム。
- 前記環状構造が、前記環状構造内に冷却液を流すための導管を含む、請求項2に記載のPVDシステム。
- 前記導管が、仕切りによって互いに流体的に分離される多数のチャネルを含む、請求項3に記載のPVDシステム。
- 前記仕切りが、前記コイルを前記導管から流体的に分離する水カバーを支持するように構成される、請求項4に記載のPVDシステム。
- 前記コイルが、前記環状構造に形成された空洞に配設される、請求項2に記載のPVDシステム。
- 真空が前記真空処理チャンバに存在するとき、前記コイルを真空から流体的に分離するカバープレートをさらに含む、請求項6に記載のPVDシステム。
- 前記空洞が、前記真空処理チャンバ内の基板の処理の間前記真空処理チャンバの外部の大気に流体的に結合される、請求項6に記載のPVDシステム。
- 前記コイル部分に結合された直流(DC)電源をさらに含む、請求項1に記載のPVDシステム。
- 前記DC電源が、出力プロファイルを選択するコマンドに応じて可変DC出力を発生するように構成されたプログラマブル電源、または入力値に応じて可変DC出力を発生するように構成された制御可能な電源の一方を含む、請求項9に記載のPVDシステム。
- 追加の電磁石の追加のコイル部分をさらに含み、前記追加のコイル部分が、前記真空処理チャンバ内で前記処理領域の外に配設される、請求項1に記載のPVDシステム。
- 前記コイル部分が第1のDC電源に結合され、前記追加のコイル部分が第2のDC電源に結合される、請求項11に記載のPVDシステム。
- 真空チャンバ内の物理的気相堆積の方法であって、前記方法が、
前記真空チャンバの処理領域に基板を位置付けることであり、前記処理領域が、前記真空チャンバのスパッタリングターゲットの表面、前記真空チャンバ内の基板支持体の表面、および前記真空チャンバ内に配設された堆積シールドの内面の間に配設される、位置付けることと、
前記処理領域にプラズマを発生させることと、
前記プラズマが前記処理領域に存在するとき、電磁石のコイル部分に直流(DC)電力を印加することであり、前記コイル部分が、前記真空チャンバ内で前記処理領域の外に配設される、印加することと
を含む、方法。 - 前記コイル部分が環状構造に配設され、前記方法は、前記プラズマが前記処理領域に存在するとき、前記環状構造内に配設された導管に冷却液を供給することをさらに含む、請求項13に記載の方法。
- 前記コイル部分に前記DC電力を印加することが、可変出力DC電源から前記コイル部分にパルスDC電力を印加することを含む、請求項13に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022163898A JP2022179687A (ja) | 2018-05-09 | 2022-10-12 | 物理的気相堆積チャンバ内電磁石 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/975,400 US10867776B2 (en) | 2018-05-09 | 2018-05-09 | Physical vapor deposition in-chamber electro-magnet |
US15/975,400 | 2018-05-09 | ||
PCT/US2019/027955 WO2019217046A1 (en) | 2018-05-09 | 2019-04-17 | Physical vapor deposition in-chamber electro-magnet |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022163898A Division JP2022179687A (ja) | 2018-05-09 | 2022-10-12 | 物理的気相堆積チャンバ内電磁石 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021523984A true JP2021523984A (ja) | 2021-09-09 |
JP7199515B2 JP7199515B2 (ja) | 2023-01-05 |
Family
ID=68464987
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021512361A Active JP7199515B2 (ja) | 2018-05-09 | 2019-04-17 | 物理的気相堆積チャンバ内電磁石 |
JP2022163898A Pending JP2022179687A (ja) | 2018-05-09 | 2022-10-12 | 物理的気相堆積チャンバ内電磁石 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022163898A Pending JP2022179687A (ja) | 2018-05-09 | 2022-10-12 | 物理的気相堆積チャンバ内電磁石 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10867776B2 (ja) |
EP (1) | EP3791422A4 (ja) |
JP (2) | JP7199515B2 (ja) |
KR (1) | KR102506505B1 (ja) |
CN (1) | CN112020759B (ja) |
SG (1) | SG11202009292QA (ja) |
TW (2) | TWI758830B (ja) |
WO (1) | WO2019217046A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11345991B2 (en) * | 2018-09-27 | 2022-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, method and machine of manufacture |
KR102492597B1 (ko) * | 2022-07-13 | 2023-01-31 | 황은호 | Pvd 코팅방식에 적용되는 스퍼터링 어셈블리 및 이를 포함하는 시스템 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040094402A1 (en) * | 2002-08-01 | 2004-05-20 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
JP2008500457A (ja) * | 2004-05-26 | 2008-01-10 | アプライド マテリアルズ インコーポレイテッド | スパッタ反応装置内で金属バリアを形成するために特にマルチステッププロセスで使用される可変四重電磁石アレー |
US20080141939A1 (en) * | 2006-12-13 | 2008-06-19 | Applied Materials, Inc | Encapsulated and water cooled electromagnet array |
US20150279634A1 (en) * | 2014-04-01 | 2015-10-01 | Applied Materials, Inc. | Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4385979A (en) * | 1982-07-09 | 1983-05-31 | Varian Associates, Inc. | Target assemblies of special materials for use in sputter coating apparatus |
DE4235064A1 (de) * | 1992-10-17 | 1994-04-21 | Leybold Ag | Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung |
JPH1018043A (ja) * | 1996-07-03 | 1998-01-20 | Applied Materials Inc | プラズマ蒸着システム用スロット付rfコイル |
US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
AU6977998A (en) * | 1997-04-21 | 1998-11-13 | Tokyo Electron Arizona, Inc. | Method and apparatus for ionized sputtering of materials |
WO2000003055A1 (en) * | 1998-07-13 | 2000-01-20 | Tokyo Electron Arizona, Inc. | Shield for ionized physical vapor deposition apparatus |
US6117279A (en) | 1998-11-12 | 2000-09-12 | Tokyo Electron Limited | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition |
JP3570908B2 (ja) | 1998-11-17 | 2004-09-29 | 富士通株式会社 | 通報システム |
US6627056B2 (en) | 2000-02-16 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for ionized plasma deposition |
TW584905B (en) * | 2000-02-25 | 2004-04-21 | Tokyo Electron Ltd | Method and apparatus for depositing films |
US6471830B1 (en) * | 2000-10-03 | 2002-10-29 | Veeco/Cvc, Inc. | Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system |
SE525231C2 (sv) | 2001-06-14 | 2005-01-11 | Chemfilt R & D Ab | Förfarande och anordning för att alstra plasma |
US6929720B2 (en) * | 2003-06-09 | 2005-08-16 | Tokyo Electron Limited | Sputtering source for ionized physical vapor deposition of metals |
TWI337753B (en) * | 2004-05-26 | 2011-02-21 | Applied Materials Inc | Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor |
US7820020B2 (en) | 2005-02-03 | 2010-10-26 | Applied Materials, Inc. | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas |
CN102439697B (zh) * | 2009-04-03 | 2015-08-19 | 应用材料公司 | 高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法 |
US9605341B2 (en) | 2013-03-06 | 2017-03-28 | Applied Materials, Inc. | Physical vapor deposition RF plasma shield deposit control |
US9978632B2 (en) * | 2014-06-13 | 2018-05-22 | Applied Materials, Inc. | Direct lift process apparatus |
-
2018
- 2018-05-09 US US15/975,400 patent/US10867776B2/en active Active
-
2019
- 2019-04-17 SG SG11202009292QA patent/SG11202009292QA/en unknown
- 2019-04-17 WO PCT/US2019/027955 patent/WO2019217046A1/en unknown
- 2019-04-17 KR KR1020207032954A patent/KR102506505B1/ko active IP Right Grant
- 2019-04-17 JP JP2021512361A patent/JP7199515B2/ja active Active
- 2019-04-17 EP EP19799561.6A patent/EP3791422A4/en active Pending
- 2019-04-17 CN CN201980024765.XA patent/CN112020759B/zh active Active
- 2019-04-19 TW TW109128513A patent/TWI758830B/zh active
- 2019-04-19 TW TW108113710A patent/TWI705151B/zh active
-
2022
- 2022-10-12 JP JP2022163898A patent/JP2022179687A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040094402A1 (en) * | 2002-08-01 | 2004-05-20 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
JP2008500457A (ja) * | 2004-05-26 | 2008-01-10 | アプライド マテリアルズ インコーポレイテッド | スパッタ反応装置内で金属バリアを形成するために特にマルチステッププロセスで使用される可変四重電磁石アレー |
US20080141939A1 (en) * | 2006-12-13 | 2008-06-19 | Applied Materials, Inc | Encapsulated and water cooled electromagnet array |
US20150279634A1 (en) * | 2014-04-01 | 2015-10-01 | Applied Materials, Inc. | Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation |
Also Published As
Publication number | Publication date |
---|---|
SG11202009292QA (en) | 2020-11-27 |
US20190348259A1 (en) | 2019-11-14 |
TW201947051A (zh) | 2019-12-16 |
CN112020759B (zh) | 2024-04-05 |
EP3791422A4 (en) | 2022-03-02 |
TWI705151B (zh) | 2020-09-21 |
KR102506505B1 (ko) | 2023-03-03 |
CN112020759A (zh) | 2020-12-01 |
WO2019217046A1 (en) | 2019-11-14 |
TW202113115A (zh) | 2021-04-01 |
JP7199515B2 (ja) | 2023-01-05 |
EP3791422A1 (en) | 2021-03-17 |
JP2022179687A (ja) | 2022-12-02 |
TWI758830B (zh) | 2022-03-21 |
KR20200136040A (ko) | 2020-12-04 |
US10867776B2 (en) | 2020-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102188022B1 (ko) | 구성가능한 가변 위치 폐쇄 트랙 마그네트론 | |
JP2022179687A (ja) | 物理的気相堆積チャンバ内電磁石 | |
US5728276A (en) | Treatment apparatus | |
JP5421388B2 (ja) | 真空物理的蒸着のための成形アノードとアノード−シールド接続 | |
KR102487342B1 (ko) | 정전척 어셈블리 및 이를 구비하는 플라즈마 처리장치 | |
KR101725431B1 (ko) | Pvd rf dc 개방/폐쇄 루프 선택가능한 마그네트론 | |
KR20020005512A (ko) | 마그네트론 스퍼터링 반응기의 바이어스 차폐판 | |
JP2007046160A (ja) | プラズマ処理方法および装置におけるセグメント化されてバイアスされる周縁電極 | |
JP2012512324A (ja) | 真空物理的蒸着のためのチャンバシールド | |
KR20020020178A (ko) | 스퍼터링장치 및 박막 제조 방법 | |
WO2016018505A1 (en) | Magnetron assembly for physical vapor deposition chamber | |
JP5561313B2 (ja) | アンテナユニット、それを含む基板処理装置 | |
CN104878363A (zh) | 机械卡盘及等离子体加工设备 | |
JP2011179120A (ja) | 多点クランプを用いた物理蒸着装置及び方法 | |
JP2017525856A (ja) | 改善された金属イオン濾過方法および装置 | |
JP2011068918A (ja) | 載置台構造及びプラズマ成膜装置 | |
KR20200042583A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
US20140346037A1 (en) | Sputter device | |
JP2011179119A (ja) | 熱拡散器を用いた物理蒸着装置及び方法 | |
JP2007250860A (ja) | プラズマ処理装置用電極アッセンブリ及びプラズマ処理装置 | |
JP4762187B2 (ja) | マグネトロンスパッタリング装置および半導体装置の製造方法 | |
JP2023120247A (ja) | 負イオン照射装置 | |
JP2018204060A (ja) | スパッタリング装置 | |
TWI673797B (zh) | 製程零件、半導體製造設備及半導體製造方法 | |
CN215856307U (zh) | 磁场调节器、磁控溅射装置的靶组件和磁控溅射装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201104 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201104 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220304 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220613 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221012 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20221012 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20221021 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20221024 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221205 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221220 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7199515 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |