WO2009044473A1 - 高周波スパッタリング装置 - Google Patents
高周波スパッタリング装置 Download PDFInfo
- Publication number
- WO2009044473A1 WO2009044473A1 PCT/JP2007/069459 JP2007069459W WO2009044473A1 WO 2009044473 A1 WO2009044473 A1 WO 2009044473A1 JP 2007069459 W JP2007069459 W JP 2007069459W WO 2009044473 A1 WO2009044473 A1 WO 2009044473A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- placing stand
- chamber
- substrate holder
- high frequency
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 9
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
Abstract
基板電位を調整することで基板に対する自己バイアスの制御を行うために、本発明に従った高周波スパッタリング装置は、チャンバと、チャンバの内部を排気する排気手段と、チャンバ内にガスを供給するガス導入手段と、基板載置台を備える基板ホルダと、基板ホルダを回転させることが可能な回転駆動手段と、ターゲット載置台を備えるスパッタリングカソードであって、基板載置台の表面とターゲット載置台の表面とが非平行となるように配置されることを特徴とするスパッタリングカソードと、基板ホルダ内部に設けられた電極と、電極と電気的に接続されており基板ホルダ上の基板電位を調整する可変インピーダンス機構と、を有する。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/069459 WO2009044473A1 (ja) | 2007-10-04 | 2007-10-04 | 高周波スパッタリング装置 |
KR1020107007282A KR101229473B1 (ko) | 2007-10-04 | 2008-08-29 | 고주파 스퍼터링 장치 |
PCT/JP2008/065485 WO2009044597A1 (ja) | 2007-10-04 | 2008-08-29 | 高周波スパッタリング装置 |
CN2008801103366A CN101821424B (zh) | 2007-10-04 | 2008-08-29 | 高频溅射装置 |
US12/727,316 US9017535B2 (en) | 2007-10-04 | 2010-03-19 | High-frequency sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/069459 WO2009044473A1 (ja) | 2007-10-04 | 2007-10-04 | 高周波スパッタリング装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009044473A1 true WO2009044473A1 (ja) | 2009-04-09 |
Family
ID=40525906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/069459 WO2009044473A1 (ja) | 2007-10-04 | 2007-10-04 | 高周波スパッタリング装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9017535B2 (ja) |
KR (1) | KR101229473B1 (ja) |
CN (1) | CN101821424B (ja) |
WO (1) | WO2009044473A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100178528A1 (en) * | 2007-06-19 | 2010-07-15 | Canon Anelva Corporation | Tunnel magnetoresistive thin film and magnetic multilayer film formation apparatus |
WO2009157341A1 (ja) * | 2008-06-25 | 2009-12-30 | キヤノンアネルバ株式会社 | スパッタリング装置及びその制御用プログラムを記録した記録媒体 |
CN102239276A (zh) * | 2008-12-03 | 2011-11-09 | 佳能安内华股份有限公司 | 等离子体处理装置、磁电阻元件的制造装置、磁性薄膜的成膜方法以及成膜控制程序 |
KR20130059384A (ko) | 2010-06-25 | 2013-06-05 | 캐논 아네르바 가부시키가이샤 | 스퍼터링 장치, 박막증착 방법 및 컨트롤 디바이스 |
KR101522992B1 (ko) | 2010-12-28 | 2015-05-26 | 캐논 아네르바 가부시키가이샤 | 제조장치 |
JP6042196B2 (ja) | 2011-12-22 | 2016-12-14 | キヤノンアネルバ株式会社 | スパッタ装置、スパッタ装置の制御装置、および成膜方法 |
WO2014002328A1 (ja) | 2012-06-29 | 2014-01-03 | キヤノンアネルバ株式会社 | スパッタリング装置およびスパッタリング方法 |
WO2014149258A1 (en) * | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber |
US10032608B2 (en) | 2013-03-27 | 2018-07-24 | Applied Materials, Inc. | Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground |
US10125422B2 (en) * | 2013-03-27 | 2018-11-13 | Applied Materials, Inc. | High impedance RF filter for heater with impedance tuning device |
CN106715749B (zh) * | 2014-09-24 | 2019-02-12 | 株式会社爱发科 | 溅射装置 |
FR3027453B1 (fr) * | 2014-10-20 | 2017-11-24 | Commissariat Energie Atomique | Dispositif resistif pour circuit memoire ou logique et procede de fabrication d'un tel dispositif |
JP6030813B1 (ja) | 2015-03-25 | 2016-11-24 | 株式会社アルバック | 高周波スパッタリング装置及びスパッタリング方法 |
US10431440B2 (en) | 2015-12-20 | 2019-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
KR102075446B1 (ko) | 2016-02-01 | 2020-02-10 | 캐논 아네르바 가부시키가이샤 | 자기 저항 효과 소자의 제조 방법 |
KR20210006725A (ko) * | 2019-07-09 | 2021-01-19 | 삼성전자주식회사 | 스퍼터링 장치 및 이를 이용한 반도체 장치의 제조 방법 |
JP7325278B2 (ja) * | 2019-09-18 | 2023-08-14 | 東京エレクトロン株式会社 | スパッタ方法およびスパッタ装置 |
US11515147B2 (en) | 2019-12-09 | 2022-11-29 | Micron Technology, Inc. | Material deposition systems, and related methods |
EP4244882A1 (en) * | 2020-11-16 | 2023-09-20 | Applied Materials, Inc. | Methods and apparatus for zone control of rf bias for stress uniformity |
EP4081671A4 (en) * | 2020-12-03 | 2023-09-27 | Univerzita Palackého v Olomouci | DEVICE FOR DEPOSITING DIELECTRIC OPTICAL THIN FILM USING SPUTTERING PLASMA SOURCES AND ENERGY ION SOURCES |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231172A (ja) * | 1985-04-05 | 1986-10-15 | Hitachi Ltd | スパツタ方法及び装置 |
JPH09302464A (ja) * | 1996-05-10 | 1997-11-25 | Rohm Co Ltd | 高周波スパッタ装置および複合酸化物の薄膜形成方法 |
JP2004107688A (ja) * | 2002-09-13 | 2004-04-08 | Ulvac Japan Ltd | バイアススパッタ成膜方法及びバイアススパッタ成膜装置 |
JP2004162138A (ja) * | 2002-11-14 | 2004-06-10 | Anelva Corp | プラズマ支援スパッタ成膜装置 |
JP2007100183A (ja) * | 2005-10-06 | 2007-04-19 | Cyg Gijutsu Kenkyusho Kk | スパッタ装置 |
JP2007157840A (ja) * | 2005-12-01 | 2007-06-21 | Sony Corp | 記憶素子、メモリ |
Family Cites Families (105)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104898B2 (ja) * | 1988-01-13 | 1994-12-21 | 忠弘 大見 | 減圧表面処理装置 |
US5510011A (en) | 1992-11-09 | 1996-04-23 | Canon Kabushiki Kaisha | Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature |
JP3441746B2 (ja) * | 1992-11-09 | 2003-09-02 | キヤノン株式会社 | バイアススパッタ方法およびその装置 |
JPH06179968A (ja) | 1992-12-11 | 1994-06-28 | Canon Inc | 高周波スパッタリング装置 |
KR100290748B1 (ko) * | 1993-01-29 | 2001-06-01 | 히가시 데쓰로 | 플라즈마 처리장치 |
JP3209922B2 (ja) | 1996-06-17 | 2001-09-17 | 株式会社日立製作所 | 成膜装置および成膜方法 |
GB9620151D0 (en) * | 1996-09-27 | 1996-11-13 | Surface Tech Sys Ltd | Plasma processing apparatus |
US6217724B1 (en) * | 1998-02-11 | 2001-04-17 | Silicon General Corporation | Coated platen design for plasma immersion ion implantation |
US6493703B1 (en) * | 1999-05-11 | 2002-12-10 | Prophet Financial Systems | System and method for implementing intelligent online community message board |
WO2001008066A1 (en) * | 1999-07-26 | 2001-02-01 | Iprivacy Llc | Electronic purchase of goods over a communication network including physical delivery while securing private and personal information |
JP3852814B2 (ja) * | 1999-09-24 | 2006-12-06 | 富士通株式会社 | プロファイル作成方法及びシステム |
JP4627835B2 (ja) | 2000-03-23 | 2011-02-09 | キヤノンアネルバ株式会社 | スパッタリング装置及び薄膜形成方法 |
US8001190B2 (en) * | 2001-06-25 | 2011-08-16 | Aol Inc. | Email integrated instant messaging |
US6495010B2 (en) * | 2000-07-10 | 2002-12-17 | Unaxis Usa, Inc. | Differentially-pumped material processing system |
US20020059418A1 (en) * | 2000-07-17 | 2002-05-16 | Alan Bird | Method of and system for recording and displaying electronic mail statistics |
US7246045B1 (en) * | 2000-08-04 | 2007-07-17 | Wireless Valley Communication, Inc. | System and method for efficiently visualizing and comparing communication network system performance |
US20020024536A1 (en) * | 2000-08-25 | 2002-02-28 | Michal Kahan | Method and apparatus for information aggregation and personalized display of the aggregated information |
JP4673478B2 (ja) | 2000-10-05 | 2011-04-20 | キヤノンアネルバ株式会社 | バイアススパッタリング装置及びバイアススパッタリング方法 |
US7328186B2 (en) * | 2000-12-12 | 2008-02-05 | International Business Machines Corporation | Client account and information management system and method |
US20020087647A1 (en) * | 2000-12-28 | 2002-07-04 | Pitney Bowes Incorporated | Method for determining a correct recipient for an undeliverable e-mail message |
JP4902051B2 (ja) | 2001-03-30 | 2012-03-21 | キヤノンアネルバ株式会社 | バイアススパッタリング装置 |
US20030028525A1 (en) * | 2001-08-01 | 2003-02-06 | Santos Richard A. | System for and method of determining and using subject matter experts in a forum environment |
EP1296275A3 (en) * | 2001-08-15 | 2004-04-07 | Mail Morph Limited | A system and method for the analysis of email traffic |
US7076533B1 (en) * | 2001-11-06 | 2006-07-11 | Ihance, Inc. | Method and system for monitoring e-mail and website behavior of an e-mail recipient |
US20030120608A1 (en) * | 2001-12-21 | 2003-06-26 | Jorge Pereyra | Secure method for purchasing and payment over a communication network and method for delivering goods anonymously |
US6934911B2 (en) * | 2002-01-25 | 2005-08-23 | Nokia Corporation | Grouping and displaying of contextual objects |
US20040039630A1 (en) * | 2002-08-12 | 2004-02-26 | Begole James M.A. | Method and system for inferring and applying coordination patterns from individual work and communication activity |
US20040034537A1 (en) * | 2002-08-14 | 2004-02-19 | Pineapple Systems, Inc. | Guest relationship management system |
US20040068545A1 (en) * | 2002-10-08 | 2004-04-08 | Bellsouth Intellectual Property Corporation | Displaying and working with email attachments |
US7970832B2 (en) * | 2002-11-20 | 2011-06-28 | Return Path, Inc. | Electronic message delivery with estimation approaches and complaint, bond, and statistics panels |
US7434169B2 (en) * | 2002-11-25 | 2008-10-07 | Aol Llc, A Delaware Limited Liability Company | Facilitating communications between computer users across a network |
US7512788B2 (en) * | 2002-12-10 | 2009-03-31 | International Business Machines Corporation | Method and apparatus for anonymous group messaging in a distributed messaging system |
US20040128355A1 (en) * | 2002-12-25 | 2004-07-01 | Kuo-Jen Chao | Community-based message classification and self-amending system for a messaging system |
WO2004080097A1 (en) * | 2003-03-07 | 2004-09-16 | Ktfreetel Co., Ltd | Method for providing mobile service using code-pattern |
US20050027779A1 (en) * | 2003-07-29 | 2005-02-03 | Schinner Charles Edward | System and method for organizing email messages |
US7433920B2 (en) * | 2003-10-10 | 2008-10-07 | Microsoft Corporation | Contact sidebar tile |
US20050091272A1 (en) * | 2003-10-23 | 2005-04-28 | Smith Walter R. | Contact management |
US7424513B2 (en) * | 2003-10-23 | 2008-09-09 | Microsoft Corporation | Decoupling an attachment from an electronic message that included the attachment |
US7275068B2 (en) * | 2003-12-19 | 2007-09-25 | Hewlett-Packard Development Company, L.P. | Discovering communities-of-practice |
JP2005187860A (ja) | 2003-12-25 | 2005-07-14 | Nec Compound Semiconductor Devices Ltd | スパッタ装置 |
US7519912B2 (en) * | 2004-01-22 | 2009-04-14 | International Business Machines Corporation | Method and system for sensing and communicating the use of communication modes by remote users |
US8214749B2 (en) * | 2004-01-22 | 2012-07-03 | International Business Machines Corporation | Method and system for sensing and reporting detailed activity information regarding current and recent instant messaging sessions of remote users |
US7788260B2 (en) * | 2004-06-14 | 2010-08-31 | Facebook, Inc. | Ranking search results based on the frequency of clicks on the search results by members of a social network who are within a predetermined degree of separation |
US20060047747A1 (en) * | 2004-06-24 | 2006-03-02 | Microsoft Corporation | System and method for automatic selection of an instant messenger client |
US7886024B2 (en) * | 2004-07-01 | 2011-02-08 | Microsoft Corporation | Sharing media objects in a network |
US20060031340A1 (en) * | 2004-07-12 | 2006-02-09 | Boban Mathew | Apparatus and method for advanced attachment filtering within an integrated messaging platform |
CN1734712A (zh) * | 2004-07-30 | 2006-02-15 | 东京毅力科创株式会社 | 等离子体处理装置以及等离子体处理方法 |
US7444323B2 (en) * | 2004-09-02 | 2008-10-28 | International Business Machines Corporation | System and method for focused routing of content to dynamically determined groups of reviewers |
US20060053199A1 (en) * | 2004-09-03 | 2006-03-09 | Thorsten Pricken | Displaying monitored information in an email response management system |
JP4292128B2 (ja) * | 2004-09-07 | 2009-07-08 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
US9189756B2 (en) * | 2004-09-21 | 2015-11-17 | International Business Machines Corporation | Case management system and method for collaborative project teaming |
US7647559B2 (en) * | 2004-09-30 | 2010-01-12 | Microsoft Corporation | Method and computer-readable medium for navigating between attachments to electronic mail messages |
US20060085752A1 (en) * | 2004-10-14 | 2006-04-20 | International Business Machines Corporation | Method and apparatus for dynamically creating historical groups in a messaging client |
US8402384B2 (en) * | 2004-11-09 | 2013-03-19 | Research In Motion Limited | Dynamic bar oriented user interface |
US7244344B2 (en) * | 2005-02-03 | 2007-07-17 | Applied Materials, Inc. | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece |
US20070005702A1 (en) * | 2005-03-03 | 2007-01-04 | Tokuda Lance A | User interface for email inbox to call attention differently to different classes of email |
US8453044B2 (en) * | 2005-06-29 | 2013-05-28 | Within3, Inc. | Collections of linked databases |
US8682979B2 (en) * | 2005-07-01 | 2014-03-25 | Email2 Scp Solutions Inc. | Secure electronic mail system |
CN102710976B (zh) * | 2005-07-22 | 2014-12-10 | 袋鼠传媒股份有限公司 | 用于增强观众参与现场体育赛事的体验的设备和方法 |
US7623643B2 (en) * | 2005-07-26 | 2009-11-24 | Microsoft Corporation | Augmenting a call with context |
JP4839715B2 (ja) | 2005-07-27 | 2011-12-21 | 富士ゼロックス株式会社 | シンクライアントシステム |
JP4490350B2 (ja) * | 2005-08-26 | 2010-06-23 | 株式会社日立製作所 | 入力操作支援装置および入力操作支援方法 |
US20100174784A1 (en) * | 2005-09-20 | 2010-07-08 | Michael Ernest Levey | Systems and Methods for Analyzing Electronic Communications |
JP4353933B2 (ja) * | 2005-10-11 | 2009-10-28 | ソニー・エリクソン・モバイルコミュニケーションズ株式会社 | 通信装置およびコンピュータプログラム |
US7730081B2 (en) * | 2005-10-18 | 2010-06-01 | Microsoft Corporation | Searching based on messages |
US7529540B2 (en) * | 2005-11-29 | 2009-05-05 | International Business Machines Corporation | Method and system for invoking push-to-service offerings |
US7565613B2 (en) * | 2005-12-01 | 2009-07-21 | Microsoft Corporation | User interface incorporating data ecosystem awareness |
US8171128B2 (en) * | 2006-08-11 | 2012-05-01 | Facebook, Inc. | Communicating a newsfeed of media content based on a member's interactions in a social network environment |
US7827208B2 (en) * | 2006-08-11 | 2010-11-02 | Facebook, Inc. | Generating a feed of stories personalized for members of a social network |
US8402094B2 (en) * | 2006-08-11 | 2013-03-19 | Facebook, Inc. | Providing a newsfeed based on user affinity for entities and monitored actions in a social network environment |
EP1971911A2 (en) * | 2005-12-23 | 2008-09-24 | Facebook Inc. | Systems and methods for generating a social timeline |
US7743051B1 (en) * | 2006-01-23 | 2010-06-22 | Clearwell Systems, Inc. | Methods, systems, and user interface for e-mail search and retrieval |
US7792815B2 (en) * | 2006-03-06 | 2010-09-07 | Veveo, Inc. | Methods and systems for selecting and presenting content based on context sensitive user preferences |
US7461061B2 (en) * | 2006-04-20 | 2008-12-02 | Veveo, Inc. | User interface methods and systems for selecting and presenting content based on user navigation and selection actions associated with the content |
US7908647B1 (en) * | 2006-06-27 | 2011-03-15 | Confluence Commons, Inc. | Aggregation system |
US20080005249A1 (en) * | 2006-07-03 | 2008-01-03 | Hart Matt E | Method and apparatus for determining the importance of email messages |
US7769144B2 (en) * | 2006-07-21 | 2010-08-03 | Google Inc. | Method and system for generating and presenting conversation threads having email, voicemail and chat messages |
US8769005B2 (en) * | 2006-09-05 | 2014-07-01 | Motorola Mobility Llc | Methods and devices for standalone social networking and internet protocol communication setup |
US8564544B2 (en) * | 2006-09-06 | 2013-10-22 | Apple Inc. | Touch screen device, method, and graphical user interface for customizing display of content category icons |
US9798789B2 (en) * | 2006-09-12 | 2017-10-24 | Facebook, Inc. | Method and system for tracking changes to user content in an online social network |
CA2989780C (en) * | 2006-09-14 | 2022-08-09 | Veveo, Inc. | Methods and systems for dynamically rearranging search results into hierarchically organized concept clusters |
US7996456B2 (en) * | 2006-09-20 | 2011-08-09 | John Nicholas and Kristin Gross Trust | Document distribution recommender system and method |
US7634467B2 (en) * | 2006-10-31 | 2009-12-15 | Microsoft Corporation | Implicit, specialized search of business objects using unstructured text |
US20080120411A1 (en) * | 2006-11-21 | 2008-05-22 | Oliver Eberle | Methods and System for Social OnLine Association and Relationship Scoring |
US8577744B2 (en) * | 2006-12-27 | 2013-11-05 | Datascape, Inc. | System and method for effecting auction item payments through a network portal |
US8843883B2 (en) * | 2007-01-03 | 2014-09-23 | International Business Machines Corporation | System and method for model-driven dashboard for business performance management |
US8413059B2 (en) * | 2007-01-03 | 2013-04-02 | Social Concepts, Inc. | Image based electronic mail system |
US7921176B2 (en) * | 2007-01-03 | 2011-04-05 | Madnani Rajkumar R | Mechanism for generating a composite email |
KR101086424B1 (ko) * | 2007-01-12 | 2011-11-23 | 삼성전자주식회사 | 디지털 영상 처리 장치 및 방법 |
US7756935B2 (en) * | 2007-01-30 | 2010-07-13 | Xerox Corporation | E-mail based advisor for document repositories |
EP2156384A4 (en) * | 2007-06-12 | 2011-08-03 | Facebook Inc | PERSONALIZED CONTENT OF A SOCIAL NETWORK APPLICATION |
US9716764B2 (en) * | 2007-07-25 | 2017-07-25 | Yahoo! Inc. | Display of communication system usage statistics |
JP4593601B2 (ja) * | 2007-08-03 | 2010-12-08 | キヤノンアネルバ株式会社 | 汚染物質除去方法、半導体製造方法、及び薄膜形成加工装置 |
JP4682367B2 (ja) | 2007-09-28 | 2011-05-11 | キヤノンアネルバ株式会社 | 磁気抵抗効果を用いた負性抵抗素子 |
CN101821423A (zh) * | 2007-10-04 | 2010-09-01 | 佳能安内华股份有限公司 | 真空薄膜形成设备 |
US20090119678A1 (en) * | 2007-11-02 | 2009-05-07 | Jimmy Shih | Systems and methods for supporting downloadable applications on a portable client device |
US20090182788A1 (en) * | 2008-01-14 | 2009-07-16 | Zenbe, Inc. | Apparatus and method for customized email and data management |
JP5584409B2 (ja) | 2008-02-21 | 2014-09-03 | キヤノンアネルバ株式会社 | スパッタリング装置およびその制御方法 |
WO2009157064A1 (ja) | 2008-06-25 | 2009-12-30 | キヤノンアネルバ株式会社 | トンネル磁気抵抗素子の製造方法および製造装置 |
WO2010014852A1 (en) * | 2008-07-30 | 2010-02-04 | Kevin Francis Eustice | Social network model for semantic processing |
US20100049534A1 (en) * | 2008-08-19 | 2010-02-25 | Thomas Scott Whitnah | Determining User Affinity Towards Applications on a Social Networking Website |
JP2010080806A (ja) * | 2008-09-29 | 2010-04-08 | Canon Anelva Corp | 磁気抵抗素子の製造法及びその記憶媒体 |
JP2010109319A (ja) * | 2008-09-30 | 2010-05-13 | Canon Anelva Corp | 磁気抵抗素子の製造法および記憶媒体 |
US8462160B2 (en) * | 2008-12-31 | 2013-06-11 | Facebook, Inc. | Displaying demographic information of members discussing topics in a forum |
US9521013B2 (en) * | 2008-12-31 | 2016-12-13 | Facebook, Inc. | Tracking significant topics of discourse in forums |
-
2007
- 2007-10-04 WO PCT/JP2007/069459 patent/WO2009044473A1/ja active Application Filing
-
2008
- 2008-08-29 CN CN2008801103366A patent/CN101821424B/zh active Active
- 2008-08-29 KR KR1020107007282A patent/KR101229473B1/ko active IP Right Grant
-
2010
- 2010-03-19 US US12/727,316 patent/US9017535B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231172A (ja) * | 1985-04-05 | 1986-10-15 | Hitachi Ltd | スパツタ方法及び装置 |
JPH09302464A (ja) * | 1996-05-10 | 1997-11-25 | Rohm Co Ltd | 高周波スパッタ装置および複合酸化物の薄膜形成方法 |
JP2004107688A (ja) * | 2002-09-13 | 2004-04-08 | Ulvac Japan Ltd | バイアススパッタ成膜方法及びバイアススパッタ成膜装置 |
JP2004162138A (ja) * | 2002-11-14 | 2004-06-10 | Anelva Corp | プラズマ支援スパッタ成膜装置 |
JP2007100183A (ja) * | 2005-10-06 | 2007-04-19 | Cyg Gijutsu Kenkyusho Kk | スパッタ装置 |
JP2007157840A (ja) * | 2005-12-01 | 2007-06-21 | Sony Corp | 記憶素子、メモリ |
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KR101229473B1 (ko) | 2013-02-05 |
KR20100063781A (ko) | 2010-06-11 |
US20100213047A1 (en) | 2010-08-26 |
CN101821424A (zh) | 2010-09-01 |
US9017535B2 (en) | 2015-04-28 |
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