CN101821424B - 高频溅射装置 - Google Patents
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Abstract
通过使用控制高频溅射装置的自偏压的方法来提供高质量的磁阻薄膜。为了通过调整基板电位来控制基板的自偏压,根据本发明的高频溅射装置包括:室;排气部件,其对所述室的内部进行排气;气体导入部件,其将气体供给至所述室中;基板座,其设置有基板承载台;转动驱动部件,其能够转动所述基板座;溅射阴极,其设置有靶材承载台,并被配置成所述靶材承载台的表面不与所述基板承载台的表面平行;电极,其设置在所述基板座内;以及可变阻抗机构,其电连接至所述电极以调整所述基板座上的基板电位。
Description
技术领域
本发明涉及一种用于制造磁盘驱动器的磁再现头、磁性随机存取存储器的存储元件以及磁传感器的高频溅射装置及其制造方法。
背景技术
由于使用绝缘膜MgO作为隧道阻挡层的隧道磁阻薄膜在室温下表现出200%以上的极高的磁阻变化率,因而期望应用于磁再现头和MRAM的存储元件。为了实现磁头的高分辨率和MRAM的高集成度,存在使它们的元件尺寸减小的需求,然而,为了确保高速数据传送,必须降低接合阻抗。尽管能够通过减小MgO膜的隧道阻挡层的厚度来降低接合阻抗,但同时存在磁阻变化率也降低的问题。其原因可能是在MgO膜生长的初始阶段晶体定向被扰乱。
由于在高频溅射的情况下的等离子体密度比在DC溅射的情况下的等离子体密度高,并且与DC溅射的情况相比,在高频溅射的情况下偏压电压更容易被施加在与等离子体接触的结构上,因此与DC溅射的情况相比,在高频溅射的情况下,被基板和等离子体之间的电位差加速的正离子更容易流入基板。由于具有这种能量的正离子流入基板促进了溅射原子在基板上的表面扩散,因而能够形成高密度和高定向的膜。然而,如果基板上的偏压电位太高,则将出现高能正离子损坏形成期间的膜的问题。即,为了形成高质量的薄膜,存在最佳的基板电位范围,因此控制该范围很重要。这里,还需要考虑由于绝缘膜沉积在基板上,基板电位逐渐改变。
在专利文献1中公开了能够通过改变对高频溅射装置中的基板电极设置的可变阻抗的值来改变基板电极相对于阳极电极的电位的技术。在专利文献2中公开了在基板和靶材之间配置有用于控制入射到基板的粒子的电极的高频溅射装置。
专利文献1:日本特开平9-302464号公报
专利文献2:日本特开平6-179968号公报
发明内容
发明要解决的问题
然而,近年来的半导体器件要求非常薄的膜。特别是,由于用于磁阻薄膜的隧道阻挡层的晶体绝缘膜MgO的厚度非常薄,因而必须从其生长的初始阶段起以高定向的方式生长该绝缘膜。因此,有意识地控制由于绝缘膜逐渐沉积在基板上而改变的基板偏压电位、从而将偏压电位限制在促进溅射原子在基板表面上的表面扩散且不损坏膜的电位范围内很重要。本发明的目的是通过调整基板电位,从而对相对于基板的自偏压进行控制,以使得从绝缘膜生长的初始阶段起提供良好的晶体定向,来制作实现低的接合阻抗、并保持高的磁阻变化率的磁阻薄膜。
用于解决问题的方案
为了实现上述目的,根据本发明的高频溅射装置包括:室;排气部件,其对所述室的内部进行排气;气体导入部件,其将气体供给至所述室中;基板座,其设置有基板承载台;转动驱动部件,其能够转动所述基板座;溅射阴极,其设置有靶材承载台,并被配置成所述靶材承载台的表面不与所述基板承载台的表面平行;电极,其设置在所述基板座内;以及可变阻抗机构,其电连接至所述电极以调整所述基板座上的基板电位。通过对基板座配置可变阻抗机构,在绝缘体膜形成期间调整阶段电位并使其最佳化。
发明的效果
根据通过本发明的可变阻抗机构来控制施加在基板上的自偏压的大小的高频溅射装置,能够制作出具有低的接合阻抗、并保持高的磁阻变化率的磁阻薄膜。
附图说明
图1A是示出根据本发明的高频溅射装置的第一实施例的图;
图1B是示出使用根据本发明的高频溅射装置来形成膜的方法的图;
图2是示出根据本发明的高频溅射装置的第二实施例的图;
图3是示出根据本发明的高频溅射装置的另一实施例的图;
图4是示出根据本发明的高频溅射装置的第三实施例的图;
图5是包括根据本发明的溅射装置的多室系统的示意图;
图6是由根据本发明的溅射装置制作的磁阻薄膜的示意图;
图7是示出使用根据本发明的溅射装置形成的MgO膜的厚度和接合阻抗之间的关系的图;
图8是示出使用根据本发明的溅射装置形成的MgO膜的厚度和磁阻变化率之间的关系的图;以及
图9是示出使用根据本发明的溅射装置形成的MgO膜的接合阻抗和磁阻变化率之间的关系的图。
附图标记说明
1高频溅射装置;3基板座;4可变阻抗机构;8Vdc运算电路;9阻抗控制部;10输入检测器;11高频电源。
具体实施方式
第一实施例
图1A是体现本发明特征的高频溅射装置1的示意图。参照图1A说明可应用本发明的高频溅射装置1的结构。溅射装置1包括溅射阴极14a和14b,并且溅射阴极14a和14b均设置有靶材承载台。靶材5a和5b分别承载在阴极14a和阴极14b的靶材承载台上。在本实施例中,靶材5a是绝缘体MgO靶材并且靶材5b是金属Ta靶材,然而,可以由用户适当地改变靶材。阴极14a经由隔直电容(图中未示出)连接至接地的高频电源6。这里,高频电源6所指的是能够提供200到1000W功率的电源。另一阴极14b连接至接地的DC电源16。高频溅射装置1还包括基板座3和金属护罩7,其中,基板座3设置有用于承载待进行溅射处理的基板2的基板承载台,并且金属护罩7沿溅射装置1的侧面配置,以防止从靶材5出射的溅射粒子附着到真空室17。阴极14a和14b的靶材承载台的表面均布置成不与基板座3的基板承载台的表面平行。这里,优选为靶材5a和5b各自的直径等于或小于基板座3的直径。
基板座3设置有转动地驱动基板座3的转动驱动部12。可变阻抗机构4电连接至配置在基板座3内部的电极13。可变阻抗机构4包括通过组合电容C和线圈L而构成的阻抗匹配电路。此外,阻抗控制部9连接至可变阻抗机构4,并且高频电源11经由输入检测器10连接至可变阻抗机构4。阻抗控制部9和输入检测器10相互电连接。由气体供应装置15将Ar等气体提供至室17的内部。尽管图中没有示出,溅射装置1还包括用于排出室17内部的气体的排气部件。
现在参照图1B说明使用高频溅射装置来形成膜的方法。在本实施例中使用的高频溅射装置1中,以适当的速度V转动的直径为d的基板2以转数V转动。溅射阴极14和靶材5(5a、5b)安装成使得承载在溅射阴极14上的、具有直径D的靶材5的中心轴线A相对于基板2的中心法线B倾斜角度θ。靶材5的中心轴线A和靶材5之间的交点,即靶材5的中心点设定为Q。如果将平行于基板表面并穿过Q的线和基板2的中心法线B之间的交点设定为R,并且将基板2的中心设定为O,则可以将线段OR定义为距离L,并且可以将线段RQ定义为偏移距离F。按照如下来设置基板2的直径d和靶材5的直径D的比、角度θ以及距离F和L的数值。注意,在图1B中仅示出了一个靶材,然而,靶材5表示图1A中的靶材5a和5b。靶材5a和5b的表面布置成不平行,以分别面向基板。
基板2的转数V、角度θ、距离F以及距离L分别配置成满足如下条件:V≤100rpm;15°≤θ≤45°;50mm≤F≤400mm;50mm≤L≤800mm。在如下的实施例中,V、θ、F和L分别设置为100rpm、30°、250mm以及346.6mm。
在膜形成期间,真空室17内部的压力保持为约等于或小于10-7Pa以形成膜而不使杂质混入到薄膜中。如果通过气体供应装置15将Ar气体引入到真空室17内部,并且由高频电源6将高频电力(10到100MHz)施加至阴极14a,则在真空室17内部产生等离子体。从等离子体提取出的Ar离子撞击靶材5a,从而作为溅射粒子在基板2上形成MgO膜。此外,由于在溅射期间转动驱动部12使基板座3以给定的转数(100rpm)转动,因此即使使用倾斜溅射方法,也能够形成均匀的MgO膜。
如上所述,通过将基板座和靶材各自的表面布置成相互不平行,并通过使上述距离L为预定值以上,可以降低成膜率,从而使得能够精确地并可再现地形成超薄MgO膜。
如上所述,当通过将高频电力施加至绝缘体(MgO)靶材5a来进行溅射时,由于产生等离子体,具有浮动电位的基板座3容易带负电压。因此,自偏压作用在基板2上,并且从等离子体生成的Ar正离子被等离子体的正电位和基板的负电位之间的电位差加速并流入基板2。然而,为了形成高质量的超薄膜,偏压电位存在最佳的范围。由于绝缘体MgO的溅射粒子附着在室的内壁、护罩7、基板座3等上,等离子体电位和自偏压随时间变化,因而可能产生自偏压电位的最佳范围以外的偏压电位。为了应对这一问题,根据本发明的溅射装置1包括可变阻抗机构4。
下面说明使用作为本发明主体的可变阻抗机构4的匹配方法。可变阻抗机构4电连接至配置在基板座3内部的电极13,此外,高频电源11连接至可变阻抗机构4。从高频电源11将小的偏压电压施加至基板座3。这里,施加的偏压电压具有不破坏形成中的膜的功率(优选为1到10W;本实施例中为4W)。该方法作为用于在不能通过基板座3的基板承载台自身的浮动电位来获取足够的离子辅助时增加偏压电位的手段是有效的。
输入检测器10检测高频电源11的入射波、以及当未实现匹配并且没有功率消耗时产生的反射波,并将它们输入到阻抗控制部9。阻抗控制部9基于从输入检测器发送来的入射波和来自电极侧的反射波来控制可变阻抗机构4。更具体地,阻抗控制部9通过适当地控制包括在可变阻抗机构4中的阻抗匹配电路的电容C1和C2、以及线圈L1和L2的比率,来控制可变阻抗机构4,以使得检测不到上述反射波。注意,尽管图1A中仅示出了电容C1和C2以及线圈L1和L2,但可以根据实施例适当地改变电容C和线圈L的选择和组合的设计。当检测不到反射波而仅检测到入射波时,判断为可变阻抗机构4中实现了匹配。即,即使由于在护罩和基板座上沉积了MgO膜而导致等离子体阻抗改变,也判断为在基板上能够稳定地感生出自偏压。
因此,可以通过将偏压电力(电力行波)施加至基板2并基于来自基板2的反射波的检测来控制可变阻抗机构4的步骤,来实现自动匹配。通过可变阻抗机构4对基板2的电位进行控制,能够使从等离子体流入的正离子的入射能量最佳化。
在有些情况下,为了减少整个装置(图5中的多室系统400)占据的占地面积,除了MgO靶材之外,高频溅射装置1还可以设置多个靶材。
此外,如日本特开2007-34686所记载的,在形成MgO膜期间,为了吸收真空室内多余的氧气和水分,在真空室中需要使用对于氧化性气体比MgO更具有吸气效果的物质作为靶材来形成MgO膜。这里,对于氧化性气体比MgO更具有吸气效果的物质是包括Ta、Ti、Mg、Zr、Nb、Mo、W、Cr、Mn、Hf、V、B、Si、Al或Ge的金属或半导体。
然而,如果在高频溅射装置1中形成除MgO以外的金属膜(例如,Ta),则不但MgO膜而且Ta膜也附着在护罩7和真空室17的内壁上。配置这里所说的护罩7以防止膜附着至真空室17,并且护罩7可以由装置的用户替换。护罩7的电位由于成膜处理的次数和附着了多层膜而随时间改变。尽管可能因此产生膜缺乏均质性和均一性的问题,但如果使用根据本发明的包括可变阻抗机构4的高频溅射装置1,则可以解决这些问题。
第二实施例
参照图2说明根据第二实施例的高频溅射装置的结构。如图2所示,电极13配置在承载有基板2的基板座3的内部。电极13上配置有流入电子检测传感器(Vdc检测传感器)18,流入电子检测传感器18用于通过取入从等离子体流入的电子来检测电流值。流入电子检测传感器18包括形成为露出配置在基板座3内部的电极13的孔,并通过使等离子体中的电子经由该孔流入电极13来检测电子。
这里,Vdc是地和基板之间的电位差,即施加至基板的自偏压。本实施例的高频溅射装置设置有运算电路8和阻抗控制部9,其中,运算电路8包括用于将由流入电子检测传感器18检测到的电流值转换为Vdc的运算部8a,阻抗控制部9通过对来自运算电路8的Vdc信号进行运算处理来控制可变阻抗机构4的阻抗。可变阻抗机构4包括通过组合电容C和线圈L而构成的阻抗匹配电路,并且电连接至配置在基板座3内的电极13。与第一实施例中的高频溅射装置不同,第二实施例中的高频溅射装置不必使用连接至基板座3侧的高频电源。注意,尽管图2中没有示出阴极14a和14b、高频电源6、DC电源16、金属护罩7、靶材5a和5b以及气体供应单元15,但与图1所示的高频溅射装置1同样地配置这些组件。
下面说明根据本实施例的高频溅射装置的工作。Vdc检测传感器18取入从等离子体到电极13的流入电子,并检测出这些流入电子作为电流值。运算电路8的LC电路仅提取出所检测出的(高频)电流值的DC电流分量,并且由运算部8a基于欧姆定律获得Vdc。基于由运算部8a计算出的Vdc,阻抗控制部9可以适当地调整构成可变阻抗机构4的电容C1和C2以及线圈L1和L2的比率以调整可变阻抗机构4,从而能够使Vdc稳定。即,在阻抗控制部9中,由于预先对每种成膜材料、或根据由每种成膜材料形成的膜的厚度编制了最佳的Vdc,因此可以调整电容C1和C2的比率以及线圈L1和L2的比率,从而将由Vdc运算部8a计算出的Vdc调整为最佳的Vdc。
如上所述,每当在基板2上形成金属膜和绝缘膜时,并且进一步地,每当这些膜的每一个的厚度改变时,基板的电位即Vdc将随时间变化。如果Vdc超出能够形成均质膜的范围(A<Vdc<B),则不能形成高质量的膜。因此,阻抗控制部9用于适当地调整电容C1和C2的比率以将Vdc设置在能够形成均质膜的范围(A<Vdc<B)。注意,尽管图2中仅示出了电容C1和C2以及线圈L1和L2,但可以根据实施例适当地改变电容C和线圈L的选择和组合的设计。如果由于阻抗变化而使基板具有大的负电位,则膜的结构将被流入离子破坏。相反,如果基板电位过于接近地电位,则不能获得离子辅助,从而不能使溅射粒子在基板上进行充分的表面扩散运动。最佳阻抗介于这两种情况之间。例如,当在沉积有金属膜的基板上形成MgO膜时,在成膜初始阶段的超薄MgO膜起大电容的作用并产生大的偏压电位,因而膜的结构可能被具有高能量的正的流入离子破坏。如本实施例所示,如果通过监测Vdc等放电参数并自动地反馈阻抗而使阻抗最佳化,则可以将由于绝缘膜逐渐沉积在导电基板2和导电护罩7上而随时间变化的基板电位即Vdc调整为最佳电位。
此外,为了测量Vdc,并不总是需要准备Vdc检测传感器18和Vdc运算电路8,作为另一方法,可以通过在真空室内插入探针来测量Vdc。
另外,图3所示的高频溅射装置是图1所示的高频溅射装置和图2所示的高频溅射装置的结合。即,在图3所示的高频溅射装置的电极13上,与图2相同,流入电子检测传感器(Vdc检测传感器)18包括形成为露出配置在基板座3内部的电极13的孔。电极13经由与图2中的结构相同的运算电路8电连接至与图1中的结构相同的高频电源11。在该结构中,通过控制在离子辅助时作用的偏压电力以及通过控制阻抗,可以将自偏压Vdc设置在能够形成高质量膜的范围(A<Vdc<B)内。其它结构与图1所示的高频溅射装置的结构相同。
第三实施例
下面参照图4说明根据第三实施例的高频溅射装置的结构。同样地,在本实施例中,基板2放置在基板座3上,并且包括电容C1和C2以及线圈L1和L2的可变阻抗机构4电连接至配置在基板座3内的电极13。可变阻抗机构4接地。注意,尽管图3中没有示出真空室17、阴极14a和14b、高频电源6、DC电源16、金属护罩7、靶材5a和5b以及气体供应装置15等,但与图1所示的高频溅射装置1同样地配置这些组件。此外,尽管图4中仅示出了电容C1和C2以及线圈L1和L2,但可以根据实施例适当地改变电容C和线圈L的选择和组合的设计。即使没有高频电源11和运算电路8等,装置的用户也可以仅通过适当地调整构成可变阻抗机构4的电容C1和C2的比率以及线圈L1和L2的比率来改变自偏压(基板上的Vdc)。然而,在这种情况下,由于没有放电参数检测机构和反馈电路,仅能得知实验上的膜性能倾向。
第四实施例
图5示出包括上述高频溅射装置1的用于制作隧道磁阻薄膜的多室系统400的示意结构图。多室系统400是簇型系统,并且包括多个真空处理室411、421、431、441和451。设置有真空运送机器人482a和482b的真空基板运送室481配置在系统的中央位置。真空运送机器人482a和482b分别设置有可伸缩臂483a和483b以及用于承载基板的手484a和484b。臂483a和483b各自的基端部可旋转地安装至真空基板运送室481。图5所示的多室系统400的真空基板运送室481内设置有负载锁定室465和475。负载锁定室465和475将待处理的基板从外部运送至多室系统400,并将其上已形成有多层磁性膜的基板从系统400运送到外部。在真空基板运送室481和负载锁定室465和475的每一个之间,分别配置有将各室分隔开、并且如果需要则能够打开和关闭的闸门阀490f和490g。在图5所示的多室系统400中,围绕真空基板运送室481配置四个膜形成室411、421、431和451以及一个预处理室441。在室481和每个处理室之间,分别配置有将两个室分隔开、并且如果需要则能够打开和关闭的闸门阀490a到490e。注意,尽管每个室都设置有真空排气部件、气体导入部件、电力供应部件等,但在图中并没有示出这些部件。图5所示的多室系统400的溅射膜形成室411、421、431和451的每一个是在同一室内连续地形成构成磁阻元件的多层膜的膜形成室,并且设置有至少一个靶材和一个溅射阴极。
在溅射室411中,对于放置在室底部中央处的基板座412上的基板413,在顶面部经由图中未示出的各溅射阴极配置Ta靶材414a和MgO靶材414b。此外,如图5所示,还可以在溅射室411中配置靶材414c和414d,并且还可以根据实施例适当地使用这些靶材。在真空基板运送室481和溅射室411之间,配置有将两个室分隔开、并且如果需要则能够打开和关闭的闸门阀490e。
在溅射室421中,对于放置在室底部中央处的基板座422上的基板423,在顶面部经由图中未示出的各溅射阴极配置Ru靶材424a、IrMn靶材424b、70CoFe靶材424c和CoFeB靶材424d。注意,如图5所示,还可以在溅射室421的内部配置靶材424e,并且还可以根据实施例适当地使用该靶材。在真空基板运送室481和溅射室421之间,配置有将两个室分隔开、并且如果需要则能够打开和关闭的闸门阀490d。
在溅射室431中,对于放置在室底部中央处的基板座432上的基板433,经由图中未示出的各溅射阴极配置Ta靶材434a和Cu靶材434b。注意,如图5所示,还可以在溅射室431的内部配置靶材434c、434d和434e,并且还可以根据实施例适当地使用这些靶材。在真空基板运送室481和溅射室431之间,配置有将两个室分隔开、并且如果需要则能够打开和关闭的闸门阀490c。
在预处理室441中,对于放置在室底部中央处的基板座442上的基板443,通过物理蚀刻进行膜形成前的基板的清洁等预处理。在真空基板运送室481和预处理室441之间,配置有将两个室分隔开、并且如果需要则能够打开和关闭的闸门阀490b。
在溅射室451中,对于放置在室底部中央处的基板座452上的基板453,在顶面部经由图中未示出的各溅射阴极配置CoFeB靶材454a、Ta靶材454b、Cu靶材454c和Ru靶材454d。注意,如图5所示,还可以在溅射室451的内部配置靶材454e,并且还可以根据实施例适当地使用该靶材。在真空基板运送室481和溅射室451之间,配置有将两个室分隔开、并且如果需要则能够打开和关闭的闸门阀490a。
除了负载锁定室465和475以外,所有室均是压强为1×10-6Pa以下的真空室,并且由真空运送机器人482a和482b在真空中进行各真空室之间的基板运送。用于在其上形成自旋阀型隧道磁阻薄膜的基板放置在负载锁定室465或475中,在初始时使得负载锁定室465或475为大气压,在对负载锁定室465或475排出空气之后,由真空运送机器人482a和482b将基板运送到所希望的真空室中。
如图6所示,基本的膜结构如下:在热氧化的基板501上,Ta膜膜膜膜膜用作下电极层,Ru膜用作种子层,IrMn膜用作反铁磁性层,包括CoFe膜膜膜的反铁磁性结合体用作磁化固定层,并且MgO膜用作隧道阻挡层。形成CoFeB膜作为磁化自由层。最后,使用Ta膜膜膜膜的堆叠结构作为上电极。
为了有效地形成具有这种结构的膜,作为溅射靶材,将用于隧道阻挡层的MgO和用于产生纯净氛围的Ta配置在溅射室411内;将Ru、IrMn、CoFe和CoFeB配置在溅射室421内;将Ta和Cu配置在溅射室431内;并将CoFeB、Ta、Cu和Ru配置在溅射室451内。首先,将基板运送到预处理室441中,通过逆溅射蚀刻将在空气中污染的表面层物理去除约2nm。然后,将基板运送到溅射室431中,在该溅射室431中在基板上形成下电极层,下电极层包括Ta膜502、CuN膜503、Ta膜504、CuN膜505和Ta膜506。然后,将基板运送到溅射室421中,在该溅射室421中在基板上形成由Ru膜507构成的种子层、以及由IrMn膜508、CoFe膜509、Ru膜510以及CoFeB膜511构成的反铁磁性结合层,然后,将基板运送到溅射室411中,在该溅射室411中在基板上形成隧道阻挡层MgO膜512(膜厚为10到)。这里,通过使用上述倾斜溅射方法来形成隧道阻挡层MgO膜512,能够获得具有10到的厚度的非常薄的MgO膜。在基板上形成隧道阻挡层之后,将基板运送到溅射室451中,在该溅射室451中在基板上形成由CoFeB膜513构成的磁化自由层以及由Ta膜514、Cu膜515、Ta膜516及Ru膜517构成的上电极层,然后将基板返送回负载锁定室465或475。
在磁场中将所制作的隧道磁阻薄膜装入到退火炉中,并且在施加具有8kOe以上的强度、方向与一个方向平行的磁场的情况下,在真空中以期望的温度和时间进行退火处理。图6示出以这种方式制成的磁阻薄膜。当使用多室系统400形成具有MgO膜作为隧道阻挡层512的磁阻薄膜时,可以通过使用图1所示的高频溅射装置1来形成MgO隧道阻挡层512,能够获得高性能的磁阻薄膜。
使用图6所示的隧道磁阻薄膜,能够制造磁再现头、MRAM和磁传感器等MTJ装置。
当使用图5所示的多室系统400,并进一步通过在图1所示的高频溅射装置1中形成MgO隧道阻挡层512,来形成图6中的隧道磁阻薄膜500时,通过改变可变阻抗机构4来比较各薄膜500的性能。通过改变MgO隧道阻挡层512的厚度来改变接合阻抗。在图7到9中,示出如下情况下的测量结果:a)不从高频电源施加电力并且可变阻抗机构中的电容比率C1/C2固定;b)不从高频电源施加电力并且可变阻抗机构中的电容比率C1/C2固定为与情况a)不同的值;以及c)在图2所示的第二实施例中自动地调整可变阻抗机构。在情况b)中,设置电容比率C1/C2以使得与情况a)相比,负载侧阻抗中的电容分量更大。
图7是示出MgO膜的厚度和接合阻抗(RA)(Ω·μm2)之间的关系的图,图7表明可以通过减小MgO膜的厚度来降低RA。在情况a)和b)中,示出了当可变阻抗机构中的电容比率C1/C2固定时的测量结果;在情况c)中,示出了当自动地调整电容比率C1/C2时的测量结果。在情况b)中,与情况a)相比,将负载侧阻抗中的电容分量设置得更大。在全部情况a)到c)中,随着MgO膜的厚度减小,RA降低。然而,在情况c)中,与情况a)和b)相比,在相同的MgO膜厚度下能够获得更高的RA。这意味着在情况c)中,即,在可变阻抗机构中自动地调整电容比率C1/C2时制作的MgO膜具有与电容比率固定的情况a)和b)相比改善了的膜质量。膜质量由MgO膜中包含的缺陷的数量以及膜的不均匀性等决定,并且随着膜质量的改善,能够获得更大的RA。由于在情况b)中负载侧阻抗中的电容分量以及基板上的负电位比情况a)中的大,因此认为高能Ar离子流入膜中并导致膜结构的破坏和性能劣化。
图8是示出MgO膜的厚度和磁阻变化率(MR比)之间的关系的图,图8表明在全部情况a)到c)中,随着MgO膜的厚度减小,MR比也减小。在情况a)和b)中,示出了当可变阻抗机构中的电容比率C1/C2固定时的测量结果;在情况c)中,示出了当自动地调整可变阻抗机构中的电容比率C1/C2时的测量结果。在情况b)中,与情况a)相比,将负载侧阻抗中的电容分量设置得更大。在全部情况a)到c)中,在15到的厚度范围内MR比约为250%并且MR比没有差别,然而,在低于该范围的薄膜范围中,这些情况之间MR比出现了显著的差别。在自动地调整C1/C2比率的情况c)中,与情况a)和b)相比,尽管膜厚度改变但保持了最高的MR比。此外,即便对于情况a)和b)中不能获得MR比的薄膜,在情况c)中也能获得MR比。例如,当MgO膜的厚度约为时,在情况a)和b)中,不能获得MR比,然而,在情况c)中,获得了约150%的MR比。原因在于通过调整基板电位而使其始终为最佳值,来控制流入基板的正离子的能量,并且能够从MgO膜生长的初始阶段起无损坏地形成高质量的MgO膜。
图9是示出接合阻抗(RA)和磁阻变化率(MR比)之间的关系的图,图9表明在全部情况a)到c)中,随着RA降低,MR比也减小。在情况a)和b)中,示出了当可变阻抗机构中电容比率C1/C2固定时的测量结果;在情况c)中,示出了当自动地调整可变阻抗机构中的电容比率C1/C2时的测量结果。在情况b)中,与情况a)相比,将负载侧阻抗中的电容分量设置得更大。如图7所示,通过减小MgO膜的厚度来实现RA的降低,并且如图8所示,通过减小MgO膜的厚度还实现MR比的减小,然而,图9示出在不介入MgO膜的厚度的情况下RA和MR比之间的关系。在情况c)中,与情况a)和b)相比,即使在RA降低时,也可以将MR比保持在较高值。对可变阻抗机构4进行控制从而将基板电位始终调整为最佳值,能够兼顾高的MR比和低的RA。
上述实施例不意图限定本发明的范围,可以根据所提供的实施例的教导和启示适当地进行改变,以实现本发明权利要求书的主题内容。
Claims (5)
1.一种高频溅射装置,包括:
室;
排气部件,其排出所述室的内部空气;
气体导入部件,其将气体供给至所述室中;
基板座,其具有浮动电位且设置有基板承载台;
转动驱动部件,其用于转动所述基板座;
溅射阴极,其设置有靶材承载台并用于通过对所述气体施加高频电力来生成所述气体的等离子体从而溅射所述靶材承载台上的绝缘体靶材,所述溅射阴极被配置成所述靶材承载台的表面不与所述基板承载台的表面平行;
电极,其设置在所述基板座内;
可变阻抗机构,其电连接至所述电极以调整基板电位;
流入电子检测传感器,其电连接至所述电极且在形成于所述基板座上的开口处暴露至产生所述等离子体的空间;
基板电位检测部件,其基于来自所述流入电子检测传感器的电流中的直流分量来得出基板电位;以及
控制电路,其根据所得出的基板电位来控制所述可变阻抗机构,以使所述基板电位在预定范围内。
2.根据权利要求1所述的高频溅射装置,其特征在于,
在所述控制电路中编制有预定的最佳基板电位值,并且所述控制电路控制所述可变阻抗机构以使得所得出的基板电位成为预定的最佳基板电位值。
3.根据权利要求1所述的高频溅射装置,其特征在于,还包括:
高频电源,其向所述电极供给电力;
检测器,其连接至所述高频电源,以检测来自所述高频电源的入射波和来自所述电极侧的反射波;以及
控制电路,其基于检测到的入射波和反射波来控制所述可变阻抗机构,以使得检测不到反射波。
4.一种高频溅射方法,用于使用高频溅射装置来形成MgO隧道阻挡薄膜,所述高频溅射装置包括:室;排气部件,其排出所述室的内部空气;气体导入部件,其将气体供给至所述室中;基板座,其具有浮动电位且设置有基板承载台;转动驱动部件,其用于转动所述基板座;溅射阴极,其设置有靶材承载台并用于通过对所述气体施加高频电力来生成所述气体的等离子体从而溅射所述靶材承载台上的MgO靶材,所述溅射阴极被配置成所述靶材承载台的表面不与所述基板承载台的表面平行;电极,其设置在所述基板座内;可变阻抗机构,其电连接至所述电极以调整基板电位,所述高频溅射方法包括如下步骤:
将基板设置在具有浮动电位的基板座上;
设置电连接至所述电极且在形成于所述基板座上的开口处暴露至产生所述等离子体的空间的流入电子检测传感器;
基于来自所述流入电子检测传感器的电流的直流分量来得出基板电位;以及
根据所得出的基板电位来控制所述可变阻抗机构,以调整基板电位,从而使得所述基板电位在预定范围内。
5.根据权利要求4所述的高频溅射方法,其特征在于,包括如下步骤:
控制所述可变阻抗机构以使得所得出的基板电位成为预先编制的最佳基板电位值。
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Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100178528A1 (en) * | 2007-06-19 | 2010-07-15 | Canon Anelva Corporation | Tunnel magnetoresistive thin film and magnetic multilayer film formation apparatus |
WO2009157341A1 (ja) | 2008-06-25 | 2009-12-30 | キヤノンアネルバ株式会社 | スパッタリング装置及びその制御用プログラムを記録した記録媒体 |
WO2010064493A1 (ja) * | 2008-12-03 | 2010-06-10 | キヤノンアネルバ株式会社 | プラズマ処理装置、磁気抵抗素子の製造装置、磁性薄膜の成膜方法及び成膜制御プログラム |
WO2011162036A1 (ja) | 2010-06-25 | 2011-12-29 | キヤノンアネルバ株式会社 | スパッタリング装置、成膜方法、および制御装置 |
WO2012090395A1 (ja) | 2010-12-28 | 2012-07-05 | キヤノンアネルバ株式会社 | 製造装置 |
JP6042196B2 (ja) | 2011-12-22 | 2016-12-14 | キヤノンアネルバ株式会社 | スパッタ装置、スパッタ装置の制御装置、および成膜方法 |
GB2517372B (en) | 2012-06-29 | 2017-05-17 | Canon Anelva Corp | Sputtering apparatus and sputtering method |
US9865431B2 (en) * | 2013-03-15 | 2018-01-09 | Applied Materials, Inc. | Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber |
US10032608B2 (en) | 2013-03-27 | 2018-07-24 | Applied Materials, Inc. | Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground |
US10125422B2 (en) * | 2013-03-27 | 2018-11-13 | Applied Materials, Inc. | High impedance RF filter for heater with impedance tuning device |
EP3199661A4 (en) * | 2014-09-24 | 2018-03-21 | ULVAC, Inc. | Sputtering device |
FR3027453B1 (fr) * | 2014-10-20 | 2017-11-24 | Commissariat Energie Atomique | Dispositif resistif pour circuit memoire ou logique et procede de fabrication d'un tel dispositif |
WO2016152089A1 (ja) | 2015-03-25 | 2016-09-29 | 株式会社アルバック | 高周波スパッタリング装置及びスパッタリング方法 |
US10431440B2 (en) | 2015-12-20 | 2019-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
JP6591568B2 (ja) | 2016-02-01 | 2019-10-16 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
KR20210006725A (ko) | 2019-07-09 | 2021-01-19 | 삼성전자주식회사 | 스퍼터링 장치 및 이를 이용한 반도체 장치의 제조 방법 |
JP7325278B2 (ja) * | 2019-09-18 | 2023-08-14 | 東京エレクトロン株式会社 | スパッタ方法およびスパッタ装置 |
US11515147B2 (en) | 2019-12-09 | 2022-11-29 | Micron Technology, Inc. | Material deposition systems, and related methods |
CN116762160A (zh) * | 2020-11-16 | 2023-09-15 | 应用材料公司 | 用于应力均匀的rf偏压的区域控制的方法与设备 |
EP4081671A4 (en) * | 2020-12-03 | 2023-09-27 | Univerzita Palackého v Olomouci | DEVICE FOR DEPOSITING DIELECTRIC OPTICAL THIN FILM USING SPUTTERING PLASMA SOURCES AND ENERGY ION SOURCES |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1734712A (zh) * | 2004-07-30 | 2006-02-15 | 东京毅力科创株式会社 | 等离子体处理装置以及等离子体处理方法 |
CN1755963A (zh) * | 2004-09-07 | 2006-04-05 | 安内华股份有限公司 | 磁电阻效应元件及其制造方法 |
Family Cites Families (109)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0230384B2 (ja) * | 1985-04-05 | 1990-07-05 | Hitachi Ltd | Supatsutahohooyobisochi |
JPH06104898B2 (ja) * | 1988-01-13 | 1994-12-21 | 忠弘 大見 | 減圧表面処理装置 |
JP3441746B2 (ja) * | 1992-11-09 | 2003-09-02 | キヤノン株式会社 | バイアススパッタ方法およびその装置 |
US5510011A (en) | 1992-11-09 | 1996-04-23 | Canon Kabushiki Kaisha | Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature |
JPH06179968A (ja) | 1992-12-11 | 1994-06-28 | Canon Inc | 高周波スパッタリング装置 |
KR100290748B1 (ko) * | 1993-01-29 | 2001-06-01 | 히가시 데쓰로 | 플라즈마 처리장치 |
JPH09302464A (ja) * | 1996-05-10 | 1997-11-25 | Rohm Co Ltd | 高周波スパッタ装置および複合酸化物の薄膜形成方法 |
JP3209922B2 (ja) | 1996-06-17 | 2001-09-17 | 株式会社日立製作所 | 成膜装置および成膜方法 |
GB9620151D0 (en) * | 1996-09-27 | 1996-11-13 | Surface Tech Sys Ltd | Plasma processing apparatus |
US6217724B1 (en) * | 1998-02-11 | 2001-04-17 | Silicon General Corporation | Coated platen design for plasma immersion ion implantation |
US6493703B1 (en) * | 1999-05-11 | 2002-12-10 | Prophet Financial Systems | System and method for implementing intelligent online community message board |
WO2001008066A1 (en) * | 1999-07-26 | 2001-02-01 | Iprivacy Llc | Electronic purchase of goods over a communication network including physical delivery while securing private and personal information |
JP3852814B2 (ja) * | 1999-09-24 | 2006-12-06 | 富士通株式会社 | プロファイル作成方法及びシステム |
JP4627835B2 (ja) | 2000-03-23 | 2011-02-09 | キヤノンアネルバ株式会社 | スパッタリング装置及び薄膜形成方法 |
US8001190B2 (en) * | 2001-06-25 | 2011-08-16 | Aol Inc. | Email integrated instant messaging |
US6495010B2 (en) * | 2000-07-10 | 2002-12-17 | Unaxis Usa, Inc. | Differentially-pumped material processing system |
US20020059418A1 (en) * | 2000-07-17 | 2002-05-16 | Alan Bird | Method of and system for recording and displaying electronic mail statistics |
US7246045B1 (en) * | 2000-08-04 | 2007-07-17 | Wireless Valley Communication, Inc. | System and method for efficiently visualizing and comparing communication network system performance |
US20020024536A1 (en) * | 2000-08-25 | 2002-02-28 | Michal Kahan | Method and apparatus for information aggregation and personalized display of the aggregated information |
JP4673478B2 (ja) | 2000-10-05 | 2011-04-20 | キヤノンアネルバ株式会社 | バイアススパッタリング装置及びバイアススパッタリング方法 |
US7328186B2 (en) * | 2000-12-12 | 2008-02-05 | International Business Machines Corporation | Client account and information management system and method |
US20020087647A1 (en) * | 2000-12-28 | 2002-07-04 | Pitney Bowes Incorporated | Method for determining a correct recipient for an undeliverable e-mail message |
JP4902051B2 (ja) | 2001-03-30 | 2012-03-21 | キヤノンアネルバ株式会社 | バイアススパッタリング装置 |
US20030028525A1 (en) * | 2001-08-01 | 2003-02-06 | Santos Richard A. | System for and method of determining and using subject matter experts in a forum environment |
US20030037116A1 (en) * | 2001-08-15 | 2003-02-20 | Nolan Brendan Paul | System and method for the analysis of email traffic |
US7076533B1 (en) * | 2001-11-06 | 2006-07-11 | Ihance, Inc. | Method and system for monitoring e-mail and website behavior of an e-mail recipient |
US20030120608A1 (en) * | 2001-12-21 | 2003-06-26 | Jorge Pereyra | Secure method for purchasing and payment over a communication network and method for delivering goods anonymously |
US6934911B2 (en) * | 2002-01-25 | 2005-08-23 | Nokia Corporation | Grouping and displaying of contextual objects |
US20040039630A1 (en) * | 2002-08-12 | 2004-02-26 | Begole James M.A. | Method and system for inferring and applying coordination patterns from individual work and communication activity |
US20040034537A1 (en) * | 2002-08-14 | 2004-02-19 | Pineapple Systems, Inc. | Guest relationship management system |
JP4458740B2 (ja) * | 2002-09-13 | 2010-04-28 | 株式会社アルバック | バイアススパッタ成膜方法及びバイアススパッタ成膜装置 |
US20040068545A1 (en) * | 2002-10-08 | 2004-04-08 | Bellsouth Intellectual Property Corporation | Displaying and working with email attachments |
JP2004162138A (ja) * | 2002-11-14 | 2004-06-10 | Anelva Corp | プラズマ支援スパッタ成膜装置 |
US7970832B2 (en) * | 2002-11-20 | 2011-06-28 | Return Path, Inc. | Electronic message delivery with estimation approaches and complaint, bond, and statistics panels |
US7434169B2 (en) * | 2002-11-25 | 2008-10-07 | Aol Llc, A Delaware Limited Liability Company | Facilitating communications between computer users across a network |
US7512788B2 (en) * | 2002-12-10 | 2009-03-31 | International Business Machines Corporation | Method and apparatus for anonymous group messaging in a distributed messaging system |
US20040128355A1 (en) * | 2002-12-25 | 2004-07-01 | Kuo-Jen Chao | Community-based message classification and self-amending system for a messaging system |
WO2004080097A1 (en) * | 2003-03-07 | 2004-09-16 | Ktfreetel Co., Ltd | Method for providing mobile service using code-pattern |
US20050027779A1 (en) * | 2003-07-29 | 2005-02-03 | Schinner Charles Edward | System and method for organizing email messages |
US7433920B2 (en) * | 2003-10-10 | 2008-10-07 | Microsoft Corporation | Contact sidebar tile |
US20050091272A1 (en) * | 2003-10-23 | 2005-04-28 | Smith Walter R. | Contact management |
US7424513B2 (en) * | 2003-10-23 | 2008-09-09 | Microsoft Corporation | Decoupling an attachment from an electronic message that included the attachment |
US7275068B2 (en) * | 2003-12-19 | 2007-09-25 | Hewlett-Packard Development Company, L.P. | Discovering communities-of-practice |
JP2005187860A (ja) | 2003-12-25 | 2005-07-14 | Nec Compound Semiconductor Devices Ltd | スパッタ装置 |
US7519912B2 (en) * | 2004-01-22 | 2009-04-14 | International Business Machines Corporation | Method and system for sensing and communicating the use of communication modes by remote users |
US8214749B2 (en) * | 2004-01-22 | 2012-07-03 | International Business Machines Corporation | Method and system for sensing and reporting detailed activity information regarding current and recent instant messaging sessions of remote users |
US7788260B2 (en) * | 2004-06-14 | 2010-08-31 | Facebook, Inc. | Ranking search results based on the frequency of clicks on the search results by members of a social network who are within a predetermined degree of separation |
US20060047747A1 (en) * | 2004-06-24 | 2006-03-02 | Microsoft Corporation | System and method for automatic selection of an instant messenger client |
US7886024B2 (en) * | 2004-07-01 | 2011-02-08 | Microsoft Corporation | Sharing media objects in a network |
US20060031340A1 (en) * | 2004-07-12 | 2006-02-09 | Boban Mathew | Apparatus and method for advanced attachment filtering within an integrated messaging platform |
US7444323B2 (en) * | 2004-09-02 | 2008-10-28 | International Business Machines Corporation | System and method for focused routing of content to dynamically determined groups of reviewers |
US20060053199A1 (en) * | 2004-09-03 | 2006-03-09 | Thorsten Pricken | Displaying monitored information in an email response management system |
US9189756B2 (en) * | 2004-09-21 | 2015-11-17 | International Business Machines Corporation | Case management system and method for collaborative project teaming |
US7647559B2 (en) * | 2004-09-30 | 2010-01-12 | Microsoft Corporation | Method and computer-readable medium for navigating between attachments to electronic mail messages |
US20060085752A1 (en) * | 2004-10-14 | 2006-04-20 | International Business Machines Corporation | Method and apparatus for dynamically creating historical groups in a messaging client |
US8402384B2 (en) * | 2004-11-09 | 2013-03-19 | Research In Motion Limited | Dynamic bar oriented user interface |
US7244344B2 (en) * | 2005-02-03 | 2007-07-17 | Applied Materials, Inc. | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece |
US20070005702A1 (en) * | 2005-03-03 | 2007-01-04 | Tokuda Lance A | User interface for email inbox to call attention differently to different classes of email |
WO2007005463A2 (en) * | 2005-06-29 | 2007-01-11 | S.M.A.R.T. Link Medical, Inc. | Collections of linked databases |
US8682979B2 (en) * | 2005-07-01 | 2014-03-25 | Email2 Scp Solutions Inc. | Secure electronic mail system |
AU2006272401B2 (en) * | 2005-07-22 | 2011-03-31 | Fanvision Entertainment Llc | System and methods for enhancing the experience of spectators attending a live sporting event |
US7623643B2 (en) * | 2005-07-26 | 2009-11-24 | Microsoft Corporation | Augmenting a call with context |
JP4839715B2 (ja) | 2005-07-27 | 2011-12-21 | 富士ゼロックス株式会社 | シンクライアントシステム |
JP4490350B2 (ja) * | 2005-08-26 | 2010-06-23 | 株式会社日立製作所 | 入力操作支援装置および入力操作支援方法 |
WO2007034179A1 (en) * | 2005-09-20 | 2007-03-29 | Mailmapping Limited | Systems and methods for analyzing electronic communications |
JP4755475B2 (ja) * | 2005-10-06 | 2011-08-24 | 株式会社昭和真空 | スパッタ装置 |
JP4353933B2 (ja) * | 2005-10-11 | 2009-10-28 | ソニー・エリクソン・モバイルコミュニケーションズ株式会社 | 通信装置およびコンピュータプログラム |
US7730081B2 (en) * | 2005-10-18 | 2010-06-01 | Microsoft Corporation | Searching based on messages |
US7529540B2 (en) * | 2005-11-29 | 2009-05-05 | International Business Machines Corporation | Method and system for invoking push-to-service offerings |
JP5040105B2 (ja) * | 2005-12-01 | 2012-10-03 | ソニー株式会社 | 記憶素子、メモリ |
US7565613B2 (en) * | 2005-12-01 | 2009-07-21 | Microsoft Corporation | User interface incorporating data ecosystem awareness |
US8171128B2 (en) * | 2006-08-11 | 2012-05-01 | Facebook, Inc. | Communicating a newsfeed of media content based on a member's interactions in a social network environment |
US7827208B2 (en) * | 2006-08-11 | 2010-11-02 | Facebook, Inc. | Generating a feed of stories personalized for members of a social network |
US7725492B2 (en) * | 2005-12-23 | 2010-05-25 | Facebook, Inc. | Managing information about relationships in a social network via a social timeline |
US8402094B2 (en) * | 2006-08-11 | 2013-03-19 | Facebook, Inc. | Providing a newsfeed based on user affinity for entities and monitored actions in a social network environment |
US7743051B1 (en) * | 2006-01-23 | 2010-06-22 | Clearwell Systems, Inc. | Methods, systems, and user interface for e-mail search and retrieval |
US7792815B2 (en) * | 2006-03-06 | 2010-09-07 | Veveo, Inc. | Methods and systems for selecting and presenting content based on context sensitive user preferences |
EP4209927A1 (en) * | 2006-04-20 | 2023-07-12 | Veveo, Inc. | User interface methods and systems for selecting and presenting content based on user navigation and selection actions associated with the content |
US7908647B1 (en) * | 2006-06-27 | 2011-03-15 | Confluence Commons, Inc. | Aggregation system |
US20080005249A1 (en) * | 2006-07-03 | 2008-01-03 | Hart Matt E | Method and apparatus for determining the importance of email messages |
US7769144B2 (en) * | 2006-07-21 | 2010-08-03 | Google Inc. | Method and system for generating and presenting conversation threads having email, voicemail and chat messages |
US8769005B2 (en) * | 2006-09-05 | 2014-07-01 | Motorola Mobility Llc | Methods and devices for standalone social networking and internet protocol communication setup |
US8564544B2 (en) * | 2006-09-06 | 2013-10-22 | Apple Inc. | Touch screen device, method, and graphical user interface for customizing display of content category icons |
US9798789B2 (en) * | 2006-09-12 | 2017-10-24 | Facebook, Inc. | Method and system for tracking changes to user content in an online social network |
CA2989780C (en) * | 2006-09-14 | 2022-08-09 | Veveo, Inc. | Methods and systems for dynamically rearranging search results into hierarchically organized concept clusters |
US7996456B2 (en) * | 2006-09-20 | 2011-08-09 | John Nicholas and Kristin Gross Trust | Document distribution recommender system and method |
US7634467B2 (en) * | 2006-10-31 | 2009-12-15 | Microsoft Corporation | Implicit, specialized search of business objects using unstructured text |
US20080120411A1 (en) * | 2006-11-21 | 2008-05-22 | Oliver Eberle | Methods and System for Social OnLine Association and Relationship Scoring |
US8577744B2 (en) * | 2006-12-27 | 2013-11-05 | Datascape, Inc. | System and method for effecting auction item payments through a network portal |
US7921176B2 (en) * | 2007-01-03 | 2011-04-05 | Madnani Rajkumar R | Mechanism for generating a composite email |
US8413059B2 (en) * | 2007-01-03 | 2013-04-02 | Social Concepts, Inc. | Image based electronic mail system |
US8843883B2 (en) * | 2007-01-03 | 2014-09-23 | International Business Machines Corporation | System and method for model-driven dashboard for business performance management |
KR101086424B1 (ko) * | 2007-01-12 | 2011-11-23 | 삼성전자주식회사 | 디지털 영상 처리 장치 및 방법 |
US7756935B2 (en) * | 2007-01-30 | 2010-07-13 | Xerox Corporation | E-mail based advisor for document repositories |
WO2008154648A1 (en) * | 2007-06-12 | 2008-12-18 | Facebook, Inc. | Personalized social networking application content |
US9591086B2 (en) * | 2007-07-25 | 2017-03-07 | Yahoo! Inc. | Display of information in electronic communications |
JP4593601B2 (ja) | 2007-08-03 | 2010-12-08 | キヤノンアネルバ株式会社 | 汚染物質除去方法、半導体製造方法、及び薄膜形成加工装置 |
JP4682367B2 (ja) | 2007-09-28 | 2011-05-11 | キヤノンアネルバ株式会社 | 磁気抵抗効果を用いた負性抵抗素子 |
KR20100049686A (ko) * | 2007-10-04 | 2010-05-12 | 캐논 아네르바 가부시키가이샤 | 진공박막 형성가공장치 |
US20090119678A1 (en) * | 2007-11-02 | 2009-05-07 | Jimmy Shih | Systems and methods for supporting downloadable applications on a portable client device |
US20090182788A1 (en) * | 2008-01-14 | 2009-07-16 | Zenbe, Inc. | Apparatus and method for customized email and data management |
JP5584409B2 (ja) | 2008-02-21 | 2014-09-03 | キヤノンアネルバ株式会社 | スパッタリング装置およびその制御方法 |
JP5341082B2 (ja) | 2008-06-25 | 2013-11-13 | キヤノンアネルバ株式会社 | トンネル磁気抵抗素子の製造方法および製造装置 |
US9183535B2 (en) * | 2008-07-30 | 2015-11-10 | Aro, Inc. | Social network model for semantic processing |
US20100049534A1 (en) * | 2008-08-19 | 2010-02-25 | Thomas Scott Whitnah | Determining User Affinity Towards Applications on a Social Networking Website |
JP2010080806A (ja) | 2008-09-29 | 2010-04-08 | Canon Anelva Corp | 磁気抵抗素子の製造法及びその記憶媒体 |
JP2010109319A (ja) | 2008-09-30 | 2010-05-13 | Canon Anelva Corp | 磁気抵抗素子の製造法および記憶媒体 |
US8462160B2 (en) * | 2008-12-31 | 2013-06-11 | Facebook, Inc. | Displaying demographic information of members discussing topics in a forum |
US9521013B2 (en) * | 2008-12-31 | 2016-12-13 | Facebook, Inc. | Tracking significant topics of discourse in forums |
-
2007
- 2007-10-04 WO PCT/JP2007/069459 patent/WO2009044473A1/ja active Application Filing
-
2008
- 2008-08-29 CN CN2008801103366A patent/CN101821424B/zh active Active
- 2008-08-29 KR KR1020107007282A patent/KR101229473B1/ko active IP Right Grant
-
2010
- 2010-03-19 US US12/727,316 patent/US9017535B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1734712A (zh) * | 2004-07-30 | 2006-02-15 | 东京毅力科创株式会社 | 等离子体处理装置以及等离子体处理方法 |
CN1755963A (zh) * | 2004-09-07 | 2006-04-05 | 安内华股份有限公司 | 磁电阻效应元件及其制造方法 |
Non-Patent Citations (4)
Title |
---|
JP昭61-231172A 1986.10.15 |
JP特开2004-162138A 2004.06.10 |
JP特开2005-187860A 2005.07.14 |
JP特开2007-157840A 2007.06.21 |
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