JP2011524471A - 均一蒸着のための装置及び方法 - Google Patents

均一蒸着のための装置及び方法 Download PDF

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Publication number
JP2011524471A
JP2011524471A JP2011514713A JP2011514713A JP2011524471A JP 2011524471 A JP2011524471 A JP 2011524471A JP 2011514713 A JP2011514713 A JP 2011514713A JP 2011514713 A JP2011514713 A JP 2011514713A JP 2011524471 A JP2011524471 A JP 2011524471A
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JP
Japan
Prior art keywords
collimator
chamber
substrate support
aspect ratio
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011514713A
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English (en)
Japanese (ja)
Other versions
JP2011524471A5 (enExample
Inventor
ヨン カオ
モーリス イー エワート
シャンミン タン
キース エイ ミラー
ダニエル シー ルーベン
ユメシュ エム ケルカー
ツァ−ジン グン
アナンサ ケイ スブラマニ
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2011524471A publication Critical patent/JP2011524471A/ja
Publication of JP2011524471A5 publication Critical patent/JP2011524471A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2011514713A 2008-06-17 2009-06-11 均一蒸着のための装置及び方法 Pending JP2011524471A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7313008P 2008-06-17 2008-06-17
US61/073,130 2008-06-17
PCT/US2009/047103 WO2009155208A2 (en) 2008-06-17 2009-06-11 Apparatus and method for uniform deposition

Publications (2)

Publication Number Publication Date
JP2011524471A true JP2011524471A (ja) 2011-09-01
JP2011524471A5 JP2011524471A5 (enExample) 2012-07-26

Family

ID=41413769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011514713A Pending JP2011524471A (ja) 2008-06-17 2009-06-11 均一蒸着のための装置及び方法

Country Status (5)

Country Link
US (1) US20090308732A1 (enExample)
JP (1) JP2011524471A (enExample)
KR (8) KR20110020918A (enExample)
CN (1) CN102066603B (enExample)
WO (1) WO2009155208A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20160074666A (ko) * 2013-10-24 2016-06-28 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착 챔버에서 활용되는 바이폴라 콜리메이터

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CN101845610B (zh) * 2010-06-07 2011-12-07 崔铮 一种连续垂直热蒸发的金属镀膜方法
JP5825781B2 (ja) * 2010-12-17 2015-12-02 キヤノン株式会社 反射防止膜形成方法及び反射防止膜形成装置
CN103165375B (zh) * 2011-12-09 2016-06-01 中国科学院微电子研究所 半导体腔室用压片装置
US8702918B2 (en) * 2011-12-15 2014-04-22 Applied Materials, Inc. Apparatus for enabling concentricity of plasma dark space
US9404174B2 (en) 2011-12-15 2016-08-02 Applied Materials, Inc. Pinned target design for RF capacitive coupled plasma
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
US20150122643A1 (en) * 2013-11-06 2015-05-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Supporting member for magnetron sputtering anode bar and magnetron sputtering device including the same
CN103602954B (zh) * 2013-11-06 2016-02-24 深圳市华星光电技术有限公司 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置
US9887072B2 (en) 2014-01-23 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for integrated resputtering in a physical vapor deposition chamber
SG11201610937PA (en) * 2014-07-18 2017-02-27 Applied Materials Inc Additive manufacturing with laser and gas flow
US9543126B2 (en) * 2014-11-26 2017-01-10 Applied Materials, Inc. Collimator for use in substrate processing chambers
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
SG11201802667PA (en) * 2015-10-27 2018-05-30 Applied Materials Inc Biasable flux optimizer/collimator for pvd sputter chamber
US11037768B2 (en) 2016-03-05 2021-06-15 Applied Materials, Inc. Methods and apparatus for controlling ion fraction in physical vapor deposition processes
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
US11017989B2 (en) 2018-03-16 2021-05-25 Samsung Electronics Co., Ltd. Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
CN110643958A (zh) * 2019-10-21 2020-01-03 吴浪生 一种利用溅镀实现晶圆的物理镀膜设备
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
US20220406583A1 (en) * 2021-06-18 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
US11851751B2 (en) 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
FI20225334A1 (en) * 2022-04-21 2023-10-22 Biomensio Ltd Collimator to produce piezoelectric layers having tilted c-axis orientation
US20250329520A1 (en) * 2024-04-22 2025-10-23 Applied Materials, Inc. Delivery of configurable pulsed voltage waveforms for substrate processing

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JPH09500690A (ja) * 1993-07-22 1997-01-21 マティリアルズ リサーチ コーポレイション 反応スパッタ付着に使用する静止有孔プレート
JP2005514777A (ja) * 2001-12-21 2005-05-19 アプライド　マテリアルズ　インコーポレイテッド スパッタリング及び再スパッタリングのための自己イオン化及び誘導性結合プラズマ
JP2006500472A (ja) * 2001-07-25 2006-01-05 アプライド　マテリアルズ　インコーポレイテッド 物理的気相堆積システムにおけるアニール方法及び装置
JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法

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JPH09500690A (ja) * 1993-07-22 1997-01-21 マティリアルズ リサーチ コーポレイション 反応スパッタ付着に使用する静止有孔プレート
JP2006500472A (ja) * 2001-07-25 2006-01-05 アプライド　マテリアルズ　インコーポレイテッド 物理的気相堆積システムにおけるアニール方法及び装置
JP2005514777A (ja) * 2001-12-21 2005-05-19 アプライド　マテリアルズ　インコーポレイテッド スパッタリング及び再スパッタリングのための自己イオン化及び誘導性結合プラズマ
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160074666A (ko) * 2013-10-24 2016-06-28 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착 챔버에서 활용되는 바이폴라 콜리메이터
JP2016540115A (ja) * 2013-10-24 2016-12-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 物理的気相堆積チャンバで利用される双極性コリメータ
KR102214958B1 (ko) * 2013-10-24 2021-02-09 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착 챔버에서 활용되는 바이폴라 콜리메이터

Also Published As

Publication number Publication date
KR20190097315A (ko) 2019-08-20
CN102066603B (zh) 2013-04-10
KR20180019762A (ko) 2018-02-26
CN102066603A (zh) 2011-05-18
WO2009155208A3 (en) 2010-03-18
KR20150137131A (ko) 2015-12-08
US20090308732A1 (en) 2009-12-17
KR20200093084A (ko) 2020-08-04
WO2009155208A2 (en) 2009-12-23
KR20160145849A (ko) 2016-12-20
KR20170100068A (ko) 2017-09-01
KR20160134873A (ko) 2016-11-23
KR20110020918A (ko) 2011-03-03

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