KR20110020918A - 균일한 증착을 위한 장치 및 방법 - Google Patents

균일한 증착을 위한 장치 및 방법 Download PDF

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Publication number
KR20110020918A
KR20110020918A KR1020117001222A KR20117001222A KR20110020918A KR 20110020918 A KR20110020918 A KR 20110020918A KR 1020117001222 A KR1020117001222 A KR 1020117001222A KR 20117001222 A KR20117001222 A KR 20117001222A KR 20110020918 A KR20110020918 A KR 20110020918A
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KR
South Korea
Prior art keywords
collimator
chamber
substrate
sputtering target
substrate support
Prior art date
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Ceased
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KR1020117001222A
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English (en)
Korean (ko)
Inventor
용 카오
마우리스 이. 이워트
시안민 탕
케이쓰 에이. 밀러
다니엘 씨. 루벤
우메쉬 엠. 켈카
차-징 궁
아난타 케이. 서브라마니
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20110020918A publication Critical patent/KR20110020918A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020117001222A 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법 Ceased KR20110020918A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7313008P 2008-06-17 2008-06-17
US61/073,130 2008-06-17

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020157033650A Division KR20150137131A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020167034645A Division KR20160145849A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법

Publications (1)

Publication Number Publication Date
KR20110020918A true KR20110020918A (ko) 2011-03-03

Family

ID=41413769

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020177023703A Ceased KR20170100068A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020197023662A Ceased KR20190097315A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020207021871A Withdrawn KR20200093084A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020117001222A Ceased KR20110020918A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020167034645A Ceased KR20160145849A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020187004305A Ceased KR20180019762A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020157033650A Ceased KR20150137131A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020167031883A Ceased KR20160134873A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법

Family Applications Before (3)

Application Number Title Priority Date Filing Date
KR1020177023703A Ceased KR20170100068A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020197023662A Ceased KR20190097315A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020207021871A Withdrawn KR20200093084A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020167034645A Ceased KR20160145849A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020187004305A Ceased KR20180019762A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020157033650A Ceased KR20150137131A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020167031883A Ceased KR20160134873A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법

Country Status (5)

Country Link
US (1) US20090308732A1 (enExample)
JP (1) JP2011524471A (enExample)
KR (8) KR20170100068A (enExample)
CN (1) CN102066603B (enExample)
WO (1) WO2009155208A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013090532A1 (en) * 2011-12-15 2013-06-20 Applied Materials, Inc. Apparatus for enabling concentricity of plasma dark space
WO2014039252A1 (en) * 2012-09-05 2014-03-13 Applied Materials, Inc. Target center positional constraint for physical vapor deposition (pvd) processing systems
KR20170130347A (ko) * 2016-03-14 2017-11-28 가부시끼가이샤 도시바 처리 장치 및 콜리메이터
KR20180063347A (ko) * 2015-10-27 2018-06-11 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

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CN101845610B (zh) * 2010-06-07 2011-12-07 崔铮 一种连续垂直热蒸发的金属镀膜方法
JP5825781B2 (ja) * 2010-12-17 2015-12-02 キヤノン株式会社 反射防止膜形成方法及び反射防止膜形成装置
CN103165375B (zh) * 2011-12-09 2016-06-01 中国科学院微电子研究所 半导体腔室用压片装置
US9404174B2 (en) 2011-12-15 2016-08-02 Applied Materials, Inc. Pinned target design for RF capacitive coupled plasma
US9831074B2 (en) * 2013-10-24 2017-11-28 Applied Materials, Inc. Bipolar collimator utilized in a physical vapor deposition chamber
CN103602954B (zh) * 2013-11-06 2016-02-24 深圳市华星光电技术有限公司 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置
US20150122643A1 (en) * 2013-11-06 2015-05-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Supporting member for magnetron sputtering anode bar and magnetron sputtering device including the same
US9887072B2 (en) 2014-01-23 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for integrated resputtering in a physical vapor deposition chamber
US20170182556A1 (en) * 2014-07-18 2017-06-29 Applied Materials, Inc. Additive manufacturing with laser and gas flow
US9543126B2 (en) * 2014-11-26 2017-01-10 Applied Materials, Inc. Collimator for use in substrate processing chambers
US9887073B2 (en) 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
WO2017155812A1 (en) * 2016-03-05 2017-09-14 Applied Materials, Inc. Methods and apparatus for controlling ion fraction in physical vapor deposition processes
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
US11017989B2 (en) 2018-03-16 2021-05-25 Samsung Electronics Co., Ltd. Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same
CN110643958A (zh) * 2019-10-21 2020-01-03 吴浪生 一种利用溅镀实现晶圆的物理镀膜设备
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
US20220406583A1 (en) * 2021-06-18 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
US11851751B2 (en) 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
FI20225334A1 (en) * 2022-04-21 2023-10-22 Biomensio Ltd Collimator to produce piezoelectric layers having tilted c-axis orientation
WO2025226404A1 (en) * 2024-04-22 2025-10-30 Applied Materials, Inc. Delivery of configurable pulsed voltage waveforms for substrate processing

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KR20000052104A (ko) * 1999-01-29 2000-08-16 윤종용 스퍼터링 장치의 콜리메이터 구조 및 그 제조방법
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US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
US7048837B2 (en) * 2002-09-13 2006-05-23 Applied Materials, Inc. End point detection for sputtering and resputtering
JPWO2004047160A1 (ja) * 2002-11-20 2006-03-23 株式会社ルネサステクノロジ 半導体装置の製造方法
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JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013090532A1 (en) * 2011-12-15 2013-06-20 Applied Materials, Inc. Apparatus for enabling concentricity of plasma dark space
WO2014039252A1 (en) * 2012-09-05 2014-03-13 Applied Materials, Inc. Target center positional constraint for physical vapor deposition (pvd) processing systems
KR20180063347A (ko) * 2015-10-27 2018-06-11 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
KR20170130347A (ko) * 2016-03-14 2017-11-28 가부시끼가이샤 도시바 처리 장치 및 콜리메이터

Also Published As

Publication number Publication date
US20090308732A1 (en) 2009-12-17
KR20180019762A (ko) 2018-02-26
KR20150137131A (ko) 2015-12-08
WO2009155208A2 (en) 2009-12-23
JP2011524471A (ja) 2011-09-01
KR20160134873A (ko) 2016-11-23
WO2009155208A3 (en) 2010-03-18
KR20190097315A (ko) 2019-08-20
KR20170100068A (ko) 2017-09-01
CN102066603A (zh) 2011-05-18
KR20160145849A (ko) 2016-12-20
KR20200093084A (ko) 2020-08-04
CN102066603B (zh) 2013-04-10

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