KR20170100068A - 균일한 증착을 위한 장치 및 방법 - Google Patents

균일한 증착을 위한 장치 및 방법 Download PDF

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Publication number
KR20170100068A
KR20170100068A KR1020177023703A KR20177023703A KR20170100068A KR 20170100068 A KR20170100068 A KR 20170100068A KR 1020177023703 A KR1020177023703 A KR 1020177023703A KR 20177023703 A KR20177023703 A KR 20177023703A KR 20170100068 A KR20170100068 A KR 20170100068A
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KR
South Korea
Prior art keywords
collimator
chamber
sputtering target
aspect ratio
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020177023703A
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English (en)
Korean (ko)
Inventor
용 카오
마우리스 이. 이워트
시안민 탕
케이쓰 에이. 밀러
다니엘 씨. 루벤
우메쉬 엠 켈카
차-징 궁
아난타 케이. 서브라마니
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20170100068A publication Critical patent/KR20170100068A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020177023703A 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법 Ceased KR20170100068A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7313008P 2008-06-17 2008-06-17
US61/073,130 2008-06-17
PCT/US2009/047103 WO2009155208A2 (en) 2008-06-17 2009-06-11 Apparatus and method for uniform deposition

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167034645A Division KR20160145849A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197023662A Division KR20190097315A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법

Publications (1)

Publication Number Publication Date
KR20170100068A true KR20170100068A (ko) 2017-09-01

Family

ID=41413769

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020177023703A Ceased KR20170100068A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020197023662A Ceased KR20190097315A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020207021871A Withdrawn KR20200093084A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020117001222A Ceased KR20110020918A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020167034645A Ceased KR20160145849A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020187004305A Ceased KR20180019762A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020157033650A Ceased KR20150137131A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020167031883A Ceased KR20160134873A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법

Family Applications After (7)

Application Number Title Priority Date Filing Date
KR1020197023662A Ceased KR20190097315A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020207021871A Withdrawn KR20200093084A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020117001222A Ceased KR20110020918A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020167034645A Ceased KR20160145849A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020187004305A Ceased KR20180019762A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020157033650A Ceased KR20150137131A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법
KR1020167031883A Ceased KR20160134873A (ko) 2008-06-17 2009-06-11 균일한 증착을 위한 장치 및 방법

Country Status (5)

Country Link
US (1) US20090308732A1 (enExample)
JP (1) JP2011524471A (enExample)
KR (8) KR20170100068A (enExample)
CN (1) CN102066603B (enExample)
WO (1) WO2009155208A2 (enExample)

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CN101845610B (zh) * 2010-06-07 2011-12-07 崔铮 一种连续垂直热蒸发的金属镀膜方法
JP5825781B2 (ja) * 2010-12-17 2015-12-02 キヤノン株式会社 反射防止膜形成方法及び反射防止膜形成装置
CN103165375B (zh) * 2011-12-09 2016-06-01 中国科学院微电子研究所 半导体腔室用压片装置
US9404174B2 (en) 2011-12-15 2016-08-02 Applied Materials, Inc. Pinned target design for RF capacitive coupled plasma
US8702918B2 (en) * 2011-12-15 2014-04-22 Applied Materials, Inc. Apparatus for enabling concentricity of plasma dark space
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US9831074B2 (en) * 2013-10-24 2017-11-28 Applied Materials, Inc. Bipolar collimator utilized in a physical vapor deposition chamber
CN103602954B (zh) * 2013-11-06 2016-02-24 深圳市华星光电技术有限公司 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置
US20150122643A1 (en) * 2013-11-06 2015-05-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Supporting member for magnetron sputtering anode bar and magnetron sputtering device including the same
US9887072B2 (en) 2014-01-23 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for integrated resputtering in a physical vapor deposition chamber
US20170182556A1 (en) * 2014-07-18 2017-06-29 Applied Materials, Inc. Additive manufacturing with laser and gas flow
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US9887073B2 (en) 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
JP7034912B2 (ja) * 2015-10-27 2022-03-14 アプライド マテリアルズ インコーポレイテッド Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ
WO2017155812A1 (en) * 2016-03-05 2017-09-14 Applied Materials, Inc. Methods and apparatus for controlling ion fraction in physical vapor deposition processes
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
US11017989B2 (en) 2018-03-16 2021-05-25 Samsung Electronics Co., Ltd. Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same
CN110643958A (zh) * 2019-10-21 2020-01-03 吴浪生 一种利用溅镀实现晶圆的物理镀膜设备
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
US20220406583A1 (en) * 2021-06-18 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
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Also Published As

Publication number Publication date
US20090308732A1 (en) 2009-12-17
KR20180019762A (ko) 2018-02-26
KR20150137131A (ko) 2015-12-08
WO2009155208A2 (en) 2009-12-23
JP2011524471A (ja) 2011-09-01
KR20160134873A (ko) 2016-11-23
WO2009155208A3 (en) 2010-03-18
KR20190097315A (ko) 2019-08-20
CN102066603A (zh) 2011-05-18
KR20110020918A (ko) 2011-03-03
KR20160145849A (ko) 2016-12-20
KR20200093084A (ko) 2020-08-04
CN102066603B (zh) 2013-04-10

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