AU2003299015A1 - Beam plasma source - Google Patents

Beam plasma source

Info

Publication number
AU2003299015A1
AU2003299015A1 AU2003299015A AU2003299015A AU2003299015A1 AU 2003299015 A1 AU2003299015 A1 AU 2003299015A1 AU 2003299015 A AU2003299015 A AU 2003299015A AU 2003299015 A AU2003299015 A AU 2003299015A AU 2003299015 A1 AU2003299015 A1 AU 2003299015A1
Authority
AU
Australia
Prior art keywords
plasma source
beam plasma
source
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003299015A
Other languages
English (en)
Other versions
AU2003299015A8 (en
Inventor
John Madocks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Process Technologies Inc
Original Assignee
Applied Process Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Process Technologies Inc filed Critical Applied Process Technologies Inc
Publication of AU2003299015A1 publication Critical patent/AU2003299015A1/en
Publication of AU2003299015A8 publication Critical patent/AU2003299015A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H01J27/146—End-Hall type ion sources, wherein the magnetic field confines the electrons in a central cylinder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
AU2003299015A 2002-09-19 2003-09-19 Beam plasma source Abandoned AU2003299015A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41205102P 2002-09-19 2002-09-19
US60/412,051 2002-09-19
PCT/US2003/029204 WO2004027825A2 (en) 2002-09-19 2003-09-19 Beam plasma source

Publications (2)

Publication Number Publication Date
AU2003299015A1 true AU2003299015A1 (en) 2004-04-08
AU2003299015A8 AU2003299015A8 (en) 2004-04-08

Family

ID=32030790

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003299015A Abandoned AU2003299015A1 (en) 2002-09-19 2003-09-19 Beam plasma source

Country Status (5)

Country Link
US (1) US7327089B2 (enExample)
EP (1) EP1554412B1 (enExample)
JP (2) JP5160730B2 (enExample)
AU (1) AU2003299015A1 (enExample)
WO (1) WO2004027825A2 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
FR2857555B1 (fr) * 2003-07-09 2005-10-14 Snecma Moteurs Accelerateur a plasma a derive fermee d'electrons
US7312579B2 (en) * 2006-04-18 2007-12-25 Colorado Advanced Technology Llc Hall-current ion source for ion beams of low and high energy for technological applications
US20110233049A1 (en) * 2007-08-30 2011-09-29 Koninklijke Philips Electronics N.V. Sputtering system
DE102008028542B4 (de) * 2008-06-16 2012-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion
CN104498898B (zh) * 2008-08-04 2017-10-24 北美Agc平板玻璃公司 通过等离子体增强的化学气相沉积形成涂层的方法
DE102009037853B3 (de) * 2009-08-18 2011-03-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasflusssputterquelle
JPWO2012172630A1 (ja) * 2011-06-13 2015-02-23 トヨタ自動車株式会社 表面加工装置及び表面加工方法
US8617350B2 (en) 2011-06-15 2013-12-31 Belight Technology Corporation, Limited Linear plasma system
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
DE102011112759A1 (de) * 2011-09-08 2013-03-14 Oerlikon Trading Ag, Trübbach Plasmaquelle
CN102523673A (zh) * 2011-12-19 2012-06-27 北京大学 一种采用磁镜场约束的等离子体密封窗及其密封方法
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
EP2938752A4 (en) * 2012-12-28 2016-05-25 Sputtering Components Inc PLASMA ACTIVATED CHEMICAL VAPOR DEPOSITION SOURCE (PECVD)
CA2899229C (fr) 2013-02-06 2018-04-03 Arcelormittal Investigacion Y Desarrollo Sl Source de plasma
WO2014201285A1 (en) * 2013-06-12 2014-12-18 General Plasma, Inc. Linear duoplasmatron
JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
US9968016B2 (en) * 2014-08-11 2018-05-08 Toyota Motor Engineering & Manufacturing North America, Inc. Magnetic field shield
EP3212696B1 (en) 2014-10-29 2018-10-24 PPG Industries Ohio, Inc. Protective coating system for plastic substrate
CN104411082B (zh) * 2014-11-12 2017-12-19 中国科学院深圳先进技术研究院 等离子源系统和等离子生成方法
JP6508746B2 (ja) 2014-12-05 2019-05-08 エージーシー フラット グラス ノース アメリカ，インコーポレイテッドＡｇｃ Ｆｌａｔ Ｇｌａｓｓ Ｎｏｒｔｈ Ａｍｅｒｉｃａ，Ｉｎｃ． マクロ粒子低減コーティングを利用したプラズマ源ならびにマクロ粒子低減コーティングを用いたプラズマ源を薄膜コーティングおよび表面改質に使用する方法
ES2883288T3 (es) 2014-12-05 2021-12-07 Agc Glass Europe Sa Fuente de plasma de cátodo hueco
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
US10192708B2 (en) * 2015-11-20 2019-01-29 Oregon Physics, Llc Electron emitter source
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
US11823859B2 (en) 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US12217949B2 (en) 2015-12-21 2025-02-04 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US20170178878A1 (en) 2015-12-21 2017-06-22 IonQuest LLC Electrically and Magnetically Enhanced Ionized Physical Vapor Deposition Unbalanced Sputtering Source
US11482404B2 (en) 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US10957519B2 (en) 2015-12-21 2021-03-23 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
JP7186234B2 (ja) * 2018-02-07 2022-12-08 アプライド マテリアルズ インコーポレイテッド 堆積装置、フレキシブル基板をコーティングする方法、及びコーティングを有するフレキシブル基板
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion
TWI686106B (zh) * 2019-01-25 2020-02-21 國立清華大學 場發射手持式常壓電漿產生裝置
WO2020198012A1 (en) * 2019-03-26 2020-10-01 Board Of Trustees Of Michigan State University Single beam plasma source
CN113365402B (zh) * 2020-03-06 2023-04-07 上海宏澎能源科技有限公司 限制等离子束的装置
JP7708515B2 (ja) * 2021-10-06 2025-07-15 東京エレクトロン株式会社 プラズマエッチング装置、及びプラズマエッチング方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
US4529571A (en) * 1982-10-27 1985-07-16 The United States Of America As Represented By The United States Department Of Energy Single-ring magnetic cusp low gas pressure ion source
US4727293A (en) * 1984-08-16 1988-02-23 Board Of Trustees Operating Michigan State University Plasma generating apparatus using magnets and method
YU46728B (sh) * 1986-10-23 1994-04-05 VUJO dr. MILJEVIĆ Jonsko-elektronski izvor sa šupljom anodom
US4868003A (en) * 1986-11-26 1989-09-19 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JPS63274762A (ja) * 1987-05-01 1988-11-11 Ulvac Corp 反応蒸着膜の形成装置
ZA884511B (en) * 1987-07-15 1989-03-29 Boc Group Inc Method of plasma enhanced silicon oxide deposition
IT1211938B (it) * 1987-11-27 1989-11-08 Siv Soc Italiana Vetro Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature
US4915805A (en) * 1988-11-21 1990-04-10 At&T Bell Laboratories Hollow cathode type magnetron apparatus construction
DE4026367A1 (de) * 1990-06-25 1992-03-12 Leybold Ag Vorrichtung zum beschichten von substraten
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
DE4042286C1 (enExample) * 1990-12-31 1992-02-06 Leybold Ag, 6450 Hanau, De
ATE147890T1 (de) * 1991-05-31 1997-02-15 Deposition Sciences Inc Sputteranlage
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
JPH06128730A (ja) * 1992-10-20 1994-05-10 Nikon Corp 金属薄膜の製造方法
DE4236264C1 (enExample) * 1992-10-27 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De
FR2701797B1 (fr) * 1993-02-18 1995-03-31 Commissariat Energie Atomique Coupleur de transfert d'une puissance micro-onde vers une nappe de plasma et source micro-onde linéaire pour le traitement de surfaces par plasma .
JPH0765764A (ja) * 1993-08-28 1995-03-10 Ulvac Japan Ltd シートイオンビーム装置
JP2876280B2 (ja) * 1993-12-27 1999-03-31 住友重機械工業株式会社 ビーム発生方法及び装置
JP2909696B2 (ja) * 1993-12-21 1999-06-23 住友重機械工業株式会社 ビーム発生方法及び装置
SE9403988L (sv) * 1994-11-18 1996-04-01 Ladislav Bardos Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning
RU2084085C1 (ru) * 1995-07-14 1997-07-10 Центральный научно-исследовательский институт машиностроения Ускоритель с замкнутым дрейфом электронов
JPH09228038A (ja) * 1996-02-23 1997-09-02 Balzers Prozes Syst Gmbh 中空のターゲットを備えた、陰極スパッタによりサブストレートを被覆するための装置
US6137231A (en) * 1996-09-10 2000-10-24 The Regents Of The University Of California Constricted glow discharge plasma source
JP4043089B2 (ja) * 1997-02-24 2008-02-06 株式会社エフオーアイ プラズマ処理装置
US6103074A (en) 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
JPH11297673A (ja) * 1998-04-15 1999-10-29 Hitachi Ltd プラズマ処理装置及びクリーニング方法
AUPP479298A0 (en) * 1998-07-21 1998-08-13 Sainty, Wayne Ion source
JP2965293B1 (ja) * 1998-11-10 1999-10-18 川崎重工業株式会社 電子ビーム励起プラズマ発生装置
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
US6444100B1 (en) * 2000-02-11 2002-09-03 Seagate Technology Llc Hollow cathode sputter source
JP3865570B2 (ja) * 2000-06-16 2007-01-10 伊藤光学工業株式会社 プラズマ加工法
US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6444945B1 (en) * 2001-03-28 2002-09-03 Cp Films, Inc. Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source
US7023128B2 (en) * 2001-04-20 2006-04-04 Applied Process Technologies, Inc. Dipole ion source
EP1390964B1 (en) * 2001-04-20 2011-12-07 General Plasma, Inc. Dipole ion source
US7294283B2 (en) * 2001-04-20 2007-11-13 Applied Process Technologies, Inc. Penning discharge plasma source
US20020153103A1 (en) * 2001-04-20 2002-10-24 Applied Process Technologies, Inc. Plasma treatment apparatus
SE525231C2 (sv) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
US7025833B2 (en) * 2002-02-27 2006-04-11 Applied Process Technologies, Inc. Apparatus and method for web cooling in a vacuum coating chamber
US6919672B2 (en) * 2002-04-10 2005-07-19 Applied Process Technologies, Inc. Closed drift ion source
CH707466B1 (de) 2002-10-03 2014-07-15 Tetra Laval Holdings & Finance Vorrichtung zur Durchführung eines Plasma-unterstützten Prozesses.
US7259378B2 (en) * 2003-04-10 2007-08-21 Applied Process Technologies, Inc. Closed drift ion source
US7038389B2 (en) * 2003-05-02 2006-05-02 Applied Process Technologies, Inc. Magnetron plasma source
CA2567372A1 (en) 2004-07-01 2006-01-19 Cardinal Cg Company Cylindrical target with oscillating magnet from magnetron sputtering

Also Published As

Publication number Publication date
JP2012124168A (ja) 2012-06-28
JP5160730B2 (ja) 2013-03-13
WO2004027825A3 (en) 2005-04-28
US20060152162A1 (en) 2006-07-13
EP1554412A4 (en) 2010-03-10
JP2006500740A (ja) 2006-01-05
US7327089B2 (en) 2008-02-05
EP1554412B1 (en) 2013-08-14
JP5642721B2 (ja) 2014-12-17
AU2003299015A8 (en) 2004-04-08
WO2004027825A2 (en) 2004-04-01
EP1554412A2 (en) 2005-07-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase