EA201100220A1 - Способ и установка для подготовки поверхности диэлектрическим барьерным разрядом - Google Patents

Способ и установка для подготовки поверхности диэлектрическим барьерным разрядом

Info

Publication number
EA201100220A1
EA201100220A1 EA201100220A EA201100220A EA201100220A1 EA 201100220 A1 EA201100220 A1 EA 201100220A1 EA 201100220 A EA201100220 A EA 201100220A EA 201100220 A EA201100220 A EA 201100220A EA 201100220 A1 EA201100220 A1 EA 201100220A1
Authority
EA
Eurasian Patent Office
Prior art keywords
preparing
installation
dielectric barrier
plasma
barrier discharge
Prior art date
Application number
EA201100220A
Other languages
English (en)
Other versions
EA018888B1 (ru
Inventor
Эрик Тиксон
Жозеф Леклерк
Эрик Мишель
Original Assignee
Агк Гласс Юроп
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Агк Гласс Юроп filed Critical Агк Гласс Юроп
Publication of EA201100220A1 publication Critical patent/EA201100220A1/ru
Publication of EA018888B1 publication Critical patent/EA018888B1/ru

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32376—Scanning across large workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)

Abstract

Способ подготовки поверхности основы (2), который содержит введение или пропускание основы (2) в реакционную камеру (6, 106). Диэлектрический барьер (14, 114) помещают между электродами (1, 10, 110). Генерируют высокочастотное электрическое напряжение, чтобы генерировать филаментарную структуру плазмы (12, 112). Молекулы (8, 108) вводят в реакционную камеру (6, 106). После контакта с плазмой они генерируют активные частицы, обычно реагирующие с поверхностью основы. Регулируемую катушку индуктивности (L), помещенную параллельно с катушкой индуктивности установки, используют, чтобы понизить сдвиг фаз между генерируемыми напряжением и током и увеличить время, в течение которого ток течет в плазме (12, 112).
EA201100220A 2008-07-16 2009-07-16 Способ и установка для предварительной обработки поверхности диэлектрическим барьерным разрядом EA018888B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08160512A EP2145701A1 (fr) 2008-07-16 2008-07-16 Procédé et installation pour la préparation de surface par décharge à barrière diélectrique
PCT/EP2009/059158 WO2010007135A1 (en) 2008-07-16 2009-07-16 Process and installation for surface preparation by dielectric barrier discharge

Publications (2)

Publication Number Publication Date
EA201100220A1 true EA201100220A1 (ru) 2011-08-30
EA018888B1 EA018888B1 (ru) 2013-11-29

Family

ID=40111056

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201100220A EA018888B1 (ru) 2008-07-16 2009-07-16 Способ и установка для предварительной обработки поверхности диэлектрическим барьерным разрядом

Country Status (10)

Country Link
US (1) US8470095B2 (ru)
EP (2) EP2145701A1 (ru)
JP (1) JP5558465B2 (ru)
CN (1) CN102083554B (ru)
BR (1) BRPI0915791B1 (ru)
EA (1) EA018888B1 (ru)
ES (1) ES2399181T3 (ru)
PL (1) PL2321070T3 (ru)
SI (1) SI2321070T1 (ru)
WO (1) WO2010007135A1 (ru)

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EP2145978A1 (fr) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour le dépôt de couches sur un substrat
EP2145979A1 (fr) * 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour le dépôt de couches sur les deux faces d'un substrat de façon simultanée
EP2326151A1 (fr) * 2009-11-24 2011-05-25 AGC Glass Europe Procédé et dispositif de polarisation d'une électrode DBD
CN102325422A (zh) * 2011-09-13 2012-01-18 青岛佳明测控仪器有限公司 平板型全密封低温等离子体激发源
WO2013040486A1 (en) * 2011-09-15 2013-03-21 Cold Plasma Medical Technologies, Inc. Cold plasma treatment devices and associated methods
JP6075703B2 (ja) * 2012-07-11 2017-02-08 旭硝子株式会社 Ｄｂｄプラズマ設備における基板損傷を防止するための装置及びプロセス
CN106164776B (zh) * 2014-04-09 2019-04-23 Asml荷兰有限公司 用于清洁对象的装置
DE102017126886B3 (de) * 2017-11-15 2019-01-24 Graforce Gmbh Verfahren und Vorrichtung zur plasmainduzierten Wasserspaltung
CN115650736B (zh) * 2022-10-10 2023-06-16 国网江西省电力有限公司电力科学研究院 一种基于介质阻挡放电排胶处理的陶瓷室温超快烧结方法

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JPH0719750B2 (ja) * 1984-06-22 1995-03-06 鐘淵化学工業株式会社 グロ−放電型成膜装置
US4871421A (en) * 1988-09-15 1989-10-03 Lam Research Corporation Split-phase driver for plasma etch system
JPH0892747A (ja) * 1994-09-22 1996-04-09 Sekisui Chem Co Ltd 基板の表面処理方法
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JP3868624B2 (ja) * 1998-03-31 2007-01-17 三菱電機株式会社 プラズマ発生用電源装置
JP3719352B2 (ja) * 1999-07-23 2005-11-24 三菱電機株式会社 プラズマ発生用電源装置及びその製造方法
JP2002058995A (ja) * 2000-08-21 2002-02-26 Matsushita Electric Works Ltd プラズマ処理装置及びプラズマ処理方法
JP2003059909A (ja) * 2001-08-17 2003-02-28 Sekisui Chem Co Ltd 放電プラズマ処理装置及びそれを用いた処理方法
US6820490B2 (en) * 2001-10-16 2004-11-23 Neomedix Corporation Systems and methods for measuring pressure
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JP4108108B2 (ja) * 2004-03-29 2008-06-25 三菱電機株式会社 プラズマ発生用電源装置
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JP2008153148A (ja) * 2006-12-20 2008-07-03 Seiko Epson Corp プラズマ処理装置
EP2145978A1 (fr) * 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour le dépôt de couches sur un substrat
EP2145979A1 (fr) * 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour le dépôt de couches sur les deux faces d'un substrat de façon simultanée

Also Published As

Publication number Publication date
EA018888B1 (ru) 2013-11-29
JP2011528165A (ja) 2011-11-10
EP2321070B1 (en) 2012-11-28
US8470095B2 (en) 2013-06-25
BRPI0915791B1 (pt) 2019-10-01
JP5558465B2 (ja) 2014-07-23
CN102083554A (zh) 2011-06-01
BRPI0915791A2 (pt) 2015-11-10
PL2321070T3 (pl) 2013-04-30
SI2321070T1 (sl) 2013-03-29
US20110174333A1 (en) 2011-07-21
EP2321070A1 (en) 2011-05-18
ES2399181T3 (es) 2013-03-26
WO2010007135A1 (en) 2010-01-21
EP2145701A1 (fr) 2010-01-20
CN102083554B (zh) 2012-08-29

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Legal Events

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MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ KZ KG MD TJ TM

MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): BY