TW200501213A - Plasma processing apparatus - Google Patents

Plasma processing apparatus

Info

Publication number
TW200501213A
TW200501213A TW093114123A TW93114123A TW200501213A TW 200501213 A TW200501213 A TW 200501213A TW 093114123 A TW093114123 A TW 093114123A TW 93114123 A TW93114123 A TW 93114123A TW 200501213 A TW200501213 A TW 200501213A
Authority
TW
Taiwan
Prior art keywords
plasma
recessed portion
processing apparatus
disposed
processed object
Prior art date
Application number
TW093114123A
Other languages
English (en)
Other versions
TWI325600B (zh
Inventor
Hiroyuki Matsuura
Hitoshi Kato
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200501213A publication Critical patent/TW200501213A/zh
Application granted granted Critical
Publication of TWI325600B publication Critical patent/TWI325600B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW093114123A 2003-05-19 2004-05-19 Plasma processing apparatus TW200501213A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003141045A JP4329403B2 (ja) 2003-05-19 2003-05-19 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200501213A true TW200501213A (en) 2005-01-01
TWI325600B TWI325600B (zh) 2010-06-01

Family

ID=33447429

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114123A TW200501213A (en) 2003-05-19 2004-05-19 Plasma processing apparatus

Country Status (7)

Country Link
US (1) US20070137572A1 (zh)
EP (1) EP1638139A4 (zh)
JP (1) JP4329403B2 (zh)
KR (1) KR100856654B1 (zh)
CN (1) CN100524641C (zh)
TW (1) TW200501213A (zh)
WO (1) WO2004102650A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412084B (zh) * 2005-10-11 2013-10-11 Tokyo Electron Ltd A substrate processing apparatus and a substrate processing method
TWI633572B (zh) * 2015-12-31 2018-08-21 大陸商中微半導體設備（上海）有限公司 Plasma processing device

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* Cited by examiner, † Cited by third party
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JP2001156065A (ja) * 1999-11-24 2001-06-08 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP4495471B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4495470B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4987220B2 (ja) * 2004-01-13 2012-07-25 三星電子株式会社 エッチング装置
JP4987219B2 (ja) * 2004-01-13 2012-07-25 三星電子株式会社 エッチング装置
JP4495472B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
US7129187B2 (en) 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
JP4506677B2 (ja) * 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4228150B2 (ja) * 2005-03-23 2009-02-25 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US8039049B2 (en) 2005-09-30 2011-10-18 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system
US7901743B2 (en) 2005-09-30 2011-03-08 Tokyo Electron Limited Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system
US7405168B2 (en) 2005-09-30 2008-07-29 Tokyo Electron Limited Plural treatment step process for treating dielectric films
US7387968B2 (en) * 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
KR100745130B1 (ko) * 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법
US20070240644A1 (en) * 2006-03-24 2007-10-18 Hiroyuki Matsuura Vertical plasma processing apparatus for semiconductor process
JP4245012B2 (ja) * 2006-07-13 2009-03-25 東京エレクトロン株式会社 処理装置及びこのクリーニング方法
JP4916257B2 (ja) 2006-09-06 2012-04-11 東京エレクトロン株式会社 酸化膜の形成方法、酸化膜の形成装置及びプログラム
JP4793306B2 (ja) * 2007-03-30 2011-10-12 東京エレクトロン株式会社 プラズマ処理方法及び記憶媒体
JP5568212B2 (ja) * 2007-09-19 2014-08-06 株式会社日立国際電気 基板処理装置、そのコーティング方法、基板処理方法及び半導体デバイスの製造方法
JP4918453B2 (ja) * 2007-10-11 2012-04-18 東京エレクトロン株式会社 ガス供給装置及び薄膜形成装置
KR20090087190A (ko) * 2008-02-12 2009-08-17 삼성전자주식회사 반도체 제조설비 그를 이용한 반도체 제조방법
KR101046335B1 (ko) 2008-07-29 2011-07-05 피에스케이 주식회사 할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5056735B2 (ja) 2008-12-02 2012-10-24 東京エレクトロン株式会社 成膜装置
WO2010137397A1 (ja) * 2009-05-26 2010-12-02 シャープ株式会社 プラズマ処理装置およびそのクリーニング方法
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
TWI474365B (zh) * 2010-08-25 2015-02-21 Canon Anelva Corp And a method of manufacturing the plasma processing apparatus and apparatus
JP5247781B2 (ja) * 2010-09-07 2013-07-24 東京エレクトロン株式会社 シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
KR20120040433A (ko) * 2010-10-19 2012-04-27 삼성전자주식회사 가스 분출 장치 및 이를 이용한 태양 전지의 제조 방법
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JP5821039B2 (ja) * 2011-11-07 2015-11-24 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
JP5993154B2 (ja) * 2012-01-20 2016-09-14 東京エレクトロン株式会社 パーティクル低減方法
US8592328B2 (en) * 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
TWI595112B (zh) 2012-10-23 2017-08-11 蘭姆研究公司 次飽和之原子層沉積及保形膜沉積
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CN103695839B (zh) * 2013-12-07 2016-05-18 深圳市金凯新瑞光电有限公司 一种应用在镀膜设备中的离子源清洗装置
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US9214333B1 (en) 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
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US20180240684A1 (en) * 2015-09-30 2018-08-23 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10629435B2 (en) 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
CN112005343A (zh) 2018-03-02 2020-11-27 朗姆研究公司 使用水解的选择性沉积
JP6987021B2 (ja) * 2018-05-28 2021-12-22 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12040181B2 (en) 2019-05-01 2024-07-16 Lam Research Corporation Modulated atomic layer deposition
FI129609B (en) * 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT
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JP7455013B2 (ja) * 2020-07-10 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7433154B2 (ja) * 2020-07-16 2024-02-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR102442458B1 (ko) * 2020-12-14 2022-09-14 주식회사 한화 복수 전극 전기 인가 장치
JP2024007904A (ja) 2022-07-06 2024-01-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412084B (zh) * 2005-10-11 2013-10-11 Tokyo Electron Ltd A substrate processing apparatus and a substrate processing method
TWI633572B (zh) * 2015-12-31 2018-08-21 大陸商中微半導體設備（上海）有限公司 Plasma processing device

Also Published As

Publication number Publication date
US20070137572A1 (en) 2007-06-21
CN1791972A (zh) 2006-06-21
WO2004102650A1 (ja) 2004-11-25
JP2004343017A (ja) 2004-12-02
CN100524641C (zh) 2009-08-05
KR20060007375A (ko) 2006-01-24
JP4329403B2 (ja) 2009-09-09
TWI325600B (zh) 2010-06-01
EP1638139A4 (en) 2008-09-17
EP1638139A1 (en) 2006-03-22
KR100856654B1 (ko) 2008-09-04

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