TW200505298A - Apparatus for plasma processing - Google Patents

Apparatus for plasma processing

Info

Publication number
TW200505298A
TW200505298A TW093102318A TW93102318A TW200505298A TW 200505298 A TW200505298 A TW 200505298A TW 093102318 A TW093102318 A TW 093102318A TW 93102318 A TW93102318 A TW 93102318A TW 200505298 A TW200505298 A TW 200505298A
Authority
TW
Taiwan
Prior art keywords
plasma generating
outer chamber
chamber
plasma
reactive gas
Prior art date
Application number
TW093102318A
Other languages
Chinese (zh)
Inventor
Kazuto Obuchi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200505298A publication Critical patent/TW200505298A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R35/00—Flexible or turnable line connectors, i.e. the rotation angle being limited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/10—Sockets for co-operation with pins or blades

Landscapes

  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

To provide a plasma treatment apparatus which has a reactive gas feed structure that is simple and capable of feeding the reactive gas quickly. The plasma treatment apparatus has the structure wherein a plasma generating electrode is provided around a plasma generating outer chamber, moreover, a processing chamber is arranged below the plasma generating outer chamber, and an inner chamber whose cross sectional area is smaller than that of the plasma generating outer chamber is provided coaxially inside the plasma generating outer chamber. The space between the plasma generating outer chamber and the inner chamber is made to serve as a plasma generating region, and two or more reactive gas feed openings are formed in the plasma generating region.
TW093102318A 2003-02-03 2004-02-02 Apparatus for plasma processing TW200505298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003026450A JP3712125B2 (en) 2003-02-03 2003-02-03 Plasma processing equipment

Publications (1)

Publication Number Publication Date
TW200505298A true TW200505298A (en) 2005-02-01

Family

ID=32954456

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102318A TW200505298A (en) 2003-02-03 2004-02-02 Apparatus for plasma processing

Country Status (3)

Country Link
JP (1) JP3712125B2 (en)
KR (1) KR20040071064A (en)
TW (1) TW200505298A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4567979B2 (en) * 2004-01-15 2010-10-27 キヤノンアネルバ株式会社 Plasma processing system and plasma processing method
KR101149332B1 (en) 2005-07-29 2012-05-23 주성엔지니어링(주) Etching apparatus using the plasma
KR100724284B1 (en) * 2005-09-06 2007-06-04 주식회사 아이피에스 Plasma processing apparatus
JP5649153B2 (en) * 2008-07-11 2015-01-07 住友重機械工業株式会社 Plasma processing apparatus and plasma processing method
JP4977730B2 (en) * 2009-03-31 2012-07-18 Ｓｐｐテクノロジーズ株式会社 Plasma etching equipment
JP5989119B2 (en) * 2011-08-19 2016-09-07 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． Plasma reactor and method for generating plasma
JP5485327B2 (en) * 2012-04-16 2014-05-07 Ｓｐｐテクノロジーズ株式会社 Plasma density adjustment member
JP5774539B2 (en) * 2012-04-16 2015-09-09 Ｓｐｐテクノロジーズ株式会社 Plasma etching method
CN110306171B (en) * 2019-06-28 2023-09-08 郑州磨料磨具磨削研究所有限公司 Deposition chamber with improved gas distribution and MPCVD device

Also Published As

Publication number Publication date
JP3712125B2 (en) 2005-11-02
KR20040071064A (en) 2004-08-11
JP2004241437A (en) 2004-08-26

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