TW200644112A - Gas supply member and plasma processing apparatus - Google Patents

Gas supply member and plasma processing apparatus

Info

Publication number
TW200644112A
TW200644112A TW095106836A TW95106836A TW200644112A TW 200644112 A TW200644112 A TW 200644112A TW 095106836 A TW095106836 A TW 095106836A TW 95106836 A TW95106836 A TW 95106836A TW 200644112 A TW200644112 A TW 200644112A
Authority
TW
Taiwan
Prior art keywords
gas
supply member
gas supply
processing apparatus
plasma processing
Prior art date
Application number
TW095106836A
Other languages
Chinese (zh)
Other versions
TWI381439B (en
Inventor
Tsuyoshi Moriya
Takahiro Murakami
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200644112A publication Critical patent/TW200644112A/en
Application granted granted Critical
Publication of TWI381439B publication Critical patent/TWI381439B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

To provide a gas supply member which can feed a gas into a chamber without allowing it to stay, and to provide a plasma processing apparatus. A gas introduction shower head 32 as a gas supply member is provided with an inclined face 201 having n-time rotational symmetry (n: natural number not smaller than two) against the central axis of a gas hole 35, in the outer periphery on the opposite side of the chamber of the gas hole 35. The inclination angle of the inclined face 201 is 20 DEG against an electrode plate space opposite face. In addition, the gas hole 35 is 2 mm in diameter, and the respective gas holes 35 are provided with an interval of 5 mm in distance.
TW095106836A 2005-03-02 2006-03-01 Gas supply structure and plasma processing device TWI381439B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005057673A JP4572127B2 (en) 2005-03-02 2005-03-02 Gas supply member and plasma processing apparatus

Publications (2)

Publication Number Publication Date
TW200644112A true TW200644112A (en) 2006-12-16
TWI381439B TWI381439B (en) 2013-01-01

Family

ID=36947125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106836A TWI381439B (en) 2005-03-02 2006-03-01 Gas supply structure and plasma processing device

Country Status (4)

Country Link
JP (1) JP4572127B2 (en)
KR (1) KR100762529B1 (en)
CN (1) CN100394543C (en)
TW (1) TWI381439B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101464227B1 (en) 2007-01-12 2014-11-21 비코 인스트루먼츠 인코포레이티드 Gas treatment systems
JP4954734B2 (en) * 2007-01-30 2012-06-20 東京エレクトロン株式会社 Substrate processing apparatus and gas supply method
JP5150217B2 (en) 2007-11-08 2013-02-20 東京エレクトロン株式会社 Shower plate and substrate processing apparatus
JP2010045407A (en) * 2009-11-24 2010-02-25 Tokyo Electron Ltd Gas supply member and plasma processing apparatus
CN102098863B (en) * 2009-12-14 2013-09-11 北京北方微电子基地设备工艺研究中心有限责任公司 Electrode board for plasma processing equipment and method for removing process sediments
JP5389282B2 (en) * 2010-08-12 2014-01-15 株式会社東芝 Gas supply member, plasma processing apparatus, and method for forming yttria-containing film
CN103171186B (en) * 2011-12-20 2015-06-10 中微半导体设备(上海)有限公司 Laminated type assembly used for plasma reaction chamber and manufacture method
CN103127810B (en) * 2013-02-26 2016-04-27 中维环保科技有限公司 Non-homogeneous field intensity plasma emission-control equipment and treatment system
KR102558925B1 (en) * 2016-02-15 2023-07-24 삼성디스플레이 주식회사 The plasma deposition device
CN108012400A (en) * 2017-11-24 2018-05-08 电子科技大学 A kind of normal pressure high frequency cold plasma processing unit
CN109119322B (en) * 2018-07-27 2020-10-02 上海硕余精密机械设备有限公司 Magnetic enhanced plasma source
JP7358048B2 (en) * 2019-01-07 2023-10-10 三菱マテリアル株式会社 Electrode plate for plasma processing equipment and its manufacturing method
CN114446747A (en) * 2020-11-04 2022-05-06 中国科学院微电子研究所 Ion generating device and semiconductor manufacturing equipment

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0435029A (en) * 1990-05-31 1992-02-05 Hitachi Electron Eng Co Ltd Shower electrode structure for plasma cvd device
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
JPH08134667A (en) * 1994-11-02 1996-05-28 Mitsubishi Materials Corp Anode electrode plate for plasma etching
JP2000235954A (en) * 1999-02-15 2000-08-29 Hiroshima Nippon Denki Kk Gas-discharging member
JP3965258B2 (en) * 1999-04-30 2007-08-29 日本碍子株式会社 Ceramic gas supply structure for semiconductor manufacturing equipment
JP3599619B2 (en) * 1999-11-09 2004-12-08 シャープ株式会社 Plasma process equipment
KR20010083348A (en) * 2000-02-11 2001-09-01 윤종용 Upper electrode of plasma apparatus
JP2001284256A (en) * 2000-03-29 2001-10-12 Hitachi Kokusai Electric Inc Plasma processing system
JP2003529926A (en) * 2000-03-30 2003-10-07 東京エレクトロン株式会社 Method and apparatus for adjustable gas injection into a plasma processing system
JP2002280377A (en) * 2001-03-19 2002-09-27 Hitachi Kokusai Electric Inc Substrate treatment apparatus
JP4382505B2 (en) * 2004-01-22 2009-12-16 パナソニック株式会社 Method for manufacturing dielectric plate of plasma etching apparatus

Also Published As

Publication number Publication date
TWI381439B (en) 2013-01-01
KR20060096305A (en) 2006-09-11
KR100762529B1 (en) 2007-10-01
JP4572127B2 (en) 2010-10-27
JP2006245214A (en) 2006-09-14
CN1828825A (en) 2006-09-06
CN100394543C (en) 2008-06-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees