JP4572127B2 - Gas supply member and plasma processing apparatus - Google Patents

Description

  The present invention relates to a gas supply member and a plasma processing apparatus.

  Usually, a plasma processing apparatus that performs predetermined plasma processing on a substrate such as a semiconductor wafer or a flat display panel includes a storage chamber (hereinafter referred to as “chamber”) that stores the substrate. This plasma processing apparatus generates a plasma from a processing gas by introducing a processing gas into a chamber from a gas introduction shower head as a gas supply member and applying a high frequency power in the chamber, and the plasma processing is performed on the substrate by the plasma. Apply.

  A flat plate having a plurality of gas holes for ejecting process gas is used for the chamber facing part of the gas introducing showerhead. When high frequency power is applied to the chamber, the outer edge of the gas hole of the gas introducing showerhead is used. Electric field concentration is likely to occur, and abnormal discharge may occur. This abnormal discharge damages the components arranged in the substrate and the chamber. Specifically, a crack, a notch or the like is generated on the surface of a semiconductor wafer as a substrate, or a component is burned out.

Therefore, conventionally, it is known that a plasma processing apparatus forms a curved surface at the outer edge of the gas ejection hole to prevent electric field concentration at the outer edge causing abnormal discharge (see, for example, Patent Document 1). .)
JP 59-4011 A

  However, in the chamber facing portion of the gas introduction shower head of the conventional plasma processing apparatus, since there is a plane portion between the gas holes, the gas hole was ejected from the gas hole at an intermediate position between the gas holes where the plane portion exists. The flow of processing gas becomes weak and stays. Particles generated in the chamber move to a portion where the gas viscous force due to collision with the molecules of the processing gas ejected from the gas hole, the ion viscous force due to collision with ions, and the electrostatic force applied to the particles are balanced (Fig. 8) The flow of the processing gas is weak and stays at an intermediate position between the gas holes where the gas viscous force becomes small. Further, since the precursor radical also stays at an intermediate position between the gas holes in the same manner as the particle (FIG. 9), the deposit easily accumulates at the position, and the deposited deposit peels off to become particles on the semiconductor wafer. Adhere to. Furthermore, the deposition process causes the reaction process in the chamber to fluctuate (memory effect).

  An object of the present invention is to provide a gas supply member and a plasma processing apparatus that can supply gas into a chamber without stagnation.

In order to achieve the above object, the gas supply member according to claim 1 is a gas supply member disposed in a chamber provided in the plasma processing apparatus, and a plane facing the internal space of the chamber and a plane orthogonal to the plane. a plurality of a gas hole, gas supply member for supplying gas to the inner space from the plurality of gas holes drilled to the outer edge portion in the plane of the gas holes may be ejected from the gas holes with a slope corresponding to the flow of gas, wherein the beveled surface, viewed contains any of the flat surface and a curved surface at least, the shape between the gas holes adjacent said as the plane is no longer present between the gas holes It consists of only slopes .

  The gas supply member according to claim 2 is the gas supply member according to claim 1, wherein the inclined surface is a surface including any one of a conical surface, a spherical surface, a parabolic surface, or a combination thereof. .

  The gas supply member according to claim 3 is the gas supply member according to claim 1 or 2, wherein an angle formed by the inclined surface and the plane is greater than an angle formed by a distribution of gas ejected from the gas hole with the plane. It is characterized by being.

  The gas supply member according to claim 4 is the gas supply member according to any one of claims 1 to 3, wherein an angle formed by the inclined surface and the plane is 20 ° or more.

  The gas supply member according to claim 5 is the gas supply member according to any one of claims 1 to 4, wherein the inclined surface has n-fold rotational symmetry with respect to a central axis of the gas hole (n = 2 to ∞). It is characterized by having.

In order to achieve the above object, a plasma processing apparatus according to claim 6 is a plasma including a chamber that accommodates an object to be processed, and a gas supply member that is disposed in the chamber and supplies gas to the internal space of the chamber. In the processing apparatus, the gas supply member includes a plane facing the internal space and a plurality of gas holes perforated so as to be orthogonal to the plane, and the gas holes supply the gas to the internal space. the outer edge portion in the plane of the gas holes is provided with a slope corresponding to the flow of gas ejected from the gas holes, wherein the beveled surface, viewed contains at least one of the planar and curved surfaces, between the gas holes adjacent The shape of is characterized by comprising only the slope so that the plane does not exist between the gas holes .

The plasma processing apparatus according to claim 7, wherein, in the plasma processing apparatus according to claim 6, wherein the beveled surface, conical surface, and wherein the spherical surface, and a plane including either or a combination thereof paraboloid .

According to the gas supply member according to claim 1 and the plasma processing apparatus according to claim 6, the outer edge portion in the plane of the gas hole drilled so as to be orthogonal to the plane facing the internal space of the chamber is ejected from the gas hole. has a slope corresponding to the flow of gas, slope look contains either at least a planar surface and a curved surface, the shape of the adjacent gas holes because consists slopes alone, the flow of the ejected gas is weakened without a point, and a portion where the flow of the ejected gas among the gas holes weakened without can Succoth, thereby, supplied into the chamber without staying between gas holes adjacent the jetted gas can do.

According to the gas supply member according to claim 2 and the plasma processing apparatus according to claim 7 , since the inclined surface is a surface including any one of a conical surface, a spherical surface, a parabolic surface, or a combination thereof, it is ejected. The part where the flow of gas becomes weak can be eliminated more.

  According to the gas supply member of claim 3, since the angle formed by the inclined surface and the plane is equal to or greater than the angle formed by the gas ejected from the gas hole and formed by the plane, the portion where the flow of the ejected gas becomes weak It can be surely lost.

  According to the gas supply member of the fourth aspect, since the angle formed by the inclined surface and the plane is 20 ° or more, it is possible to more reliably eliminate the portion where the flow of the jetted gas becomes weak.

  According to the gas supply member of the fifth aspect, since the inclined surface has n-fold rotational symmetry with respect to the central axis of the gas hole, it is possible to reliably eliminate the portion where the flow of the gas ejected between the gas holes becomes weak. .

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.

  In FIG. 1, a plasma processing apparatus 10 that performs dry etching (Reactive Ion Etching) (hereinafter referred to as “RIE”) processing as a desired plasma processing on a wafer (hereinafter simply referred to as “wafer”) W for semiconductor devices. Has a cylindrical chamber 11 made of metal, for example, aluminum or stainless steel. In the chamber 11, for example, a cylindrical shape as a mounting table (stage) on which a wafer W having a diameter of 300 mm is mounted. A susceptor 12 is arranged.

  In the plasma processing apparatus 10, an exhaust path 13 that functions as a flow path for discharging gas molecules above the susceptor 12 to the outside of the chamber 11 is formed by the inner wall of the chamber 11 and the side surface of the susceptor 12. An annular baffle plate 14 is disposed in the middle of the exhaust passage 13 to prevent plasma leakage. Further, the space downstream of the baffle plate 14 in the exhaust passage 13 goes around the susceptor 12 and communicates with an automatic pressure control valve (hereinafter referred to as “APC”) 15 that is a variable butterfly valve. To do. The APC 15 is connected to a turbo molecular pump (hereinafter referred to as “TMP”) 16 which is an exhaust pump for evacuation, and is further connected to a dry pump (hereinafter referred to as “DP”) via the TMP 16. ”)) 17. The exhaust flow path constituted by the APC 15, TMP 16 and DP 17 is hereinafter referred to as “main exhaust line”. This main exhaust line controls the pressure in the chamber 11 by the APC 15, and further the inside of the chamber 11 by the TMP 16 and DP 17. Depressurize until almost vacuum.

  Further, the space downstream of the baffle plate 14 of the exhaust passage 13 described above is also connected to an exhaust passage (hereinafter referred to as “roughing line”) different from the main exhaust line. This roughing line includes an exhaust pipe 18 having a diameter of, for example, 25 mm, and a valve 19 disposed in the middle of the exhaust pipe 18 to communicate the space with the DP 17. The valve 19 can block the space from the DP 17. The roughing line discharges the gas in the chamber 11 by the DP 17.

  A high frequency power supply 20 for the lower electrode is connected to the susceptor 12 via a feeding rod 21 and a matcher 22, and the high frequency power supply 20 for the lower electrode supplies predetermined high frequency power to the susceptor 12. . Thereby, the susceptor 12 functions as a lower electrode. The matching unit 22 reduces the reflection of the high frequency power from the susceptor 12 to maximize the supply efficiency of the high frequency power to the susceptor 12.

  A disk-shaped electrode plate 23 made of a conductive film is disposed above the susceptor 12. A DC power source 24 is electrically connected to the electrode plate 23. The wafer W is attracted and held on the upper surface of the susceptor 12 by a Coulomb force or a Johnson-Rahbek force generated by a DC voltage applied to the electrode plate 23 from the DC power source 24. In addition, an annular focus ring 25 is disposed above the susceptor 12 so as to surround the wafer W attracted and held on the upper surface of the susceptor 12. The focus ring 25 is exposed to a space S to be described later, ions and radicals generated in the space S are converged toward the surface of the wafer W, and the efficiency of the RIE process is improved.

  Further, for example, an annular refrigerant chamber 26 extending in the circumferential direction is provided inside the susceptor 12. A coolant having a predetermined temperature, for example, cooling water, is circulated and supplied from a chiller unit (not shown) to the coolant chamber 26 via a coolant pipe 27, and the wafer is adsorbed and held on the upper surface of the susceptor 12 by the coolant temperature. The processing temperature of W is controlled.

  A plurality of heat transfer gas supply holes 28 and heat transfer gas supply grooves (not shown) are arranged on a portion of the upper surface of the susceptor 12 where the wafer W is adsorbed and held (hereinafter referred to as “adsorption surface”). . These heat transfer gas supply holes 28 and the like are connected to a heat transfer gas supply unit 30 via a heat transfer gas supply line 29 disposed inside the susceptor 12, and the heat transfer gas supply unit 30 is connected to a heat transfer gas, for example, , He gas is supplied to the gap between the suction surface and the back surface of the wafer W. The heat transfer gas supply unit 30 is connected to the exhaust pipe 18 and configured to be able to evacuate the gap between the adsorption surface and the back surface of the wafer W by the DP 17.

  A plurality of pusher pins 31 serving as lift pins that can protrude from the upper surface of the susceptor 12 are arranged on the suction surface of the susceptor 12. These pusher pins 31 are connected to each other via a motor (not shown) and a ball screw (not shown), and move in the vertical direction in the figure due to the rotational motion of the motor converted into a linear motion by the ball screw. To do. When the wafer W is sucked and held on the suction surface in order to perform the RIE process on the wafer W, the pusher pin 31 is accommodated in the susceptor 12, and when the wafer W subjected to the RIE process is unloaded from the chamber 11, the pusher pin 31 is The wafer W protrudes from the upper surface of the susceptor 12 and is lifted upward while being separated from the susceptor 12.

  A gas introduction shower head 32 is disposed on the ceiling of the chamber 11 so as to face the susceptor 12. A high-frequency power source 34 for the upper electrode is connected to the gas introduction shower head 32 via a matching unit 33, and the high-frequency power source 34 for the upper electrode supplies predetermined high-frequency power to the gas introduction shower head 32. The introduction shower head 32 functions as an upper electrode. The function of the matching unit 33 is the same as the function of the matching unit 22 described above.

  The gas introduction shower head 32 includes a lower electrode plate 36 having a large number of gas holes 35 and an electrode support 37 that detachably supports the electrode plate 36. A buffer chamber 38 is provided inside the electrode support 37, and a processing gas introduction pipe 39 from a processing gas supply unit (not shown) is connected to the buffer chamber 38. A pipe insulator 40 is disposed in the middle of the processing gas introduction pipe 39. The pipe insulator 40 is made of an insulator, and prevents high-frequency power supplied to the gas introduction shower head 32 from leaking to the process gas supply section through the process gas introduction pipe 39. The gas introduction shower head 32 supplies the processing gas supplied from the processing gas introduction pipe 39 to the buffer chamber 38 into the chamber 11 through the gas hole 35.

  Further, a loading / unloading port 41 for the wafer W is provided on the side wall of the chamber 11 at a position corresponding to the height of the wafer W lifted upward from the susceptor 12 by the pusher pin 31, and the loading / unloading port 41 includes the loading / unloading port 41. A gate valve 42 for opening and closing 41 is attached.

  In the chamber 11 of the plasma processing apparatus 10, as described above, high frequency power is supplied to the susceptor 12 and the gas introduction shower head 32, and high frequency power is applied to the space S between the susceptor 12 and the gas introduction shower head 32. As a result, high-density plasma is generated from the processing gas supplied from the gas introduction shower head 32 in the space S, and the wafer W is subjected to RIE processing by the plasma.

Specifically, in the plasma processing apparatus 10, when the RIE process is performed on the wafer W, the gate valve 42 is first opened, the wafer W to be processed is loaded into the chamber 11, and a DC voltage is applied to the electrode plate. By applying the voltage to 23, the loaded wafer W is sucked and held on the suction surface of the susceptor 12. In addition, a processing gas (for example, a mixed gas composed of C ₄ F ₈ gas, O ₂ gas and Ar gas having a predetermined flow rate ratio) is supplied into the chamber 11 from the gas introduction shower head 32 at a predetermined flow rate and flow rate ratio. The pressure in the chamber 11 is set to a predetermined value by the APC 15 or the like. Further, high frequency power is applied to the space S in the chamber 11 by the susceptor 12 and the gas introduction shower head 32. As a result, the processing gas introduced from the gas introduction shower head 32 is turned into plasma, ions and radicals are generated in the space S, and the generated radicals and ions are converged on the surface of the wafer W by the focus ring 25. The surface of W is physically or chemically etched.

  FIG. 2 is an enlarged cross-sectional view showing a schematic configuration of the gas introduction shower head in FIG.

  The gas introduction shower head 32 of FIG. 2 has a slope 201 at the outer edge of each gas hole 35 on the side of the chamber facing portion. The inclined surface 201 has n-fold rotational symmetry that does not change its shape when rotated (360 / n) ° with respect to the central axis of the gas hole 35 (where n is a natural number of 2 or more), that is, before rotation. Corresponds to the slope that constitutes the hole with the same shape after rotation. In the present embodiment, n = ∞, that is, the inclined surface 201 is axisymmetric with respect to the central axis of the gas hole 35, but n may be any natural number that is 2 or more. The inclination angle of the inclined surface 201 is 20 ° with respect to the horizontal direction in FIG. 2, that is, the surface facing the space S of the flat electrode plate 36 (hereinafter referred to as “electrode plate space facing surface”). Accordingly, each gas hole 35 opens conically toward the space S. Here, the processing gas 202 is ejected from each gas hole 35 downward (space S) in the figure, and the gas viscosity force caused by the collision between the processing gas 202 and the particles in the space, and the ions in the particles and the space S A particle cloud 203 is generated in a portion where the ion viscosity force due to the collision and the electrostatic force applied to the particles are balanced. The gas holes 35 have a diameter of 2 mm and are arranged in a hexagonal shape so that the distance between them is 5 mm (FIG. 3).

  Hereinafter, the grounds for setting the inclination angle of the inclined surface 201 of each gas hole 35 to 20 ° with respect to the electrode plate space facing surface in the substrate processing apparatus according to the present embodiment will be described.

FIG. 4 is a graph showing the result of simulating the distribution of gas molecules ejected from the tube opening of the thin tube and the result of actual measurement. FIG. 4A shows the Knudsen obtained by dividing the mean free path of gas molecules by the tube opening diameter. FIG. 4B shows a case where the number Kn is 8.93 × 10 ⁻³ , FIG. 4B shows a case where Kn is 8.93 × 10 ⁻² , and FIG. .893, and FIG. 4D shows the case when Kn is 8.93. The mean free path is a function of the mean heat rate, gas constant, pressure, temperature, and gas viscosity, and is the distance traveled by the gas molecules that have been re-started after being prevented from moving again.

  In the graph of FIG. 4, the horizontal axis corresponds to a plane, and the point “P” on the horizontal axis corresponds to the cylindrical port P from which gas molecules are ejected. The vertical axis indicates the distance from the plane in the space where the planes face each other, that is, in the space where the gas molecules are ejected from the cylinder port P. “◯” indicates an actual measurement result of the distribution when nitrogen gas molecules as gas molecules are ejected from the cylinder port P, and the substantially ellipse indicated by the solid line indicates the distribution when nitrogen gas is ejected from the cylinder port P. The simulation results are shown. The cylinder port P from which nitrogen gas molecules are ejected above each graph corresponds to the opening on the electrode plate space facing surface side of the gas hole 35 from which the processing gas is ejected downward in FIG. This corresponds to 32 electrode plate space facing surfaces.

  According to the graph of FIG. 4, regardless of the simulation result or the actual measurement result, the gas molecules ejected from the cylinder port P are horizontal in the graph of FIG. The gas molecules are distributed in the range of 20 ° or more with respect to the direction, and the gas molecules are hardly distributed in the range of less than 20 °. That is, the range of less than 20 ° is so small that the gas flow can be ignored.

  Therefore, in the gas introduction shower head 32 of FIG. 2, the inclination angle of the inclined surface 201 at the outer edge of the gas hole 35 is set to 20 ° with respect to the electrode plate space facing surface. As a result, a space where the flow of the processing gas 202 ejected from the gas hole 35 becomes weak can be eliminated, and the processing gas 202 is retained at an intermediate position between the gas holes 35 (hereinafter, simply referred to as “intermediate position”). It can supply in the space S without making it. Therefore, it is possible to prevent particles from staying at the intermediate position. Similarly, the radical as a precursor can be prevented from staying at an intermediate position. As described above, it is possible to prevent deposits from being deposited at the intermediate position and prevent particles caused by the detached deposits from adhering to the wafer W.

  Next, a method for forming the slope 201 of the gas hole 35 will be described below.

  FIG. 5 is a process diagram showing a method of forming each gas hole in FIG.

  First, a plurality of gas holes 35 are drilled in the electrode plate 36 with a 2 mm diameter drill so that each interval is 5 mm (FIG. 5A), and then a guide having a diameter of about 2 mm on the central axis. The outer edge of the gas hole 35 on the side facing the chamber is scraped off using a drill 500 with a tapered blade having a taper angle of 140 °. Specifically, the guide is inserted into the perforated gas hole 35 so that the center axis of the drill 500 and the center axis of the gas hole 35 coincide with each other. Raise upward in the figure so as to enter partway. Thereby, the opening part to the space S in the gas hole 35 is formed in a conical shape. At this time, since the taper angle of the taper blade of the drill 500 is 140 °, the inclination angle of the inclined surface 201 of the opening in the gas hole 35 with respect to the electrode plate space facing surface is 20 ° (FIG. 5B).

  Next, the same process as in FIGS. 5A and 5B is performed on the gas hole 35 adjacent to the gas hole 35 in which the conical opening is formed. At this time, the slope 201 of the opening in the gas hole 35 is formed so that the electrode plate space facing surface does not exist between the gas holes 35 (FIG. 5C). By repeating the above steps, conical openings are formed in all the gas holes 35, the gas introduction shower head 32 is completed, and this process is completed (FIG. 5D).

  In the present embodiment described above, the opening of the gas hole 35 is formed in a conical shape, but a V-shaped groove having an inclination angle of 20 ° is dug in a lattice shape, and the gas hole 35 is drilled at the intersection of each groove. By doing so, the gas introduction shower head 32 may be created.

  In the present embodiment, the gas introduction shower head 32 has a structure in which a plurality of conical openings are disposed in the chamber facing portion. However, the shape of the opening is not limited to the conical shape, and is hemispherical ( 6), a quadrangular pyramid shape, a parabolic shape, or a combination of these shapes.

  In the present embodiment, the inclination angle of the inclined surface 201 of the gas hole 35 is 20 °. However, as can be seen from the graph of FIG. 4, the inclination angle is not limited to 20 ° and may be 20 ° or more. .

  In the present embodiment, the gas introduction shower head 32 is further provided with gas holes 35 having a diameter of 2 mm at intervals of 5 mm. However, the present invention is not limited to this, and each gas hole 35 having a diameter of 2 mm is provided. Gas holes 35 having a diameter of 2 mm may be arranged at intervals of 5 mm (FIG. 7A), and gas holes 35 having a diameter of 2 mm (FIGS. 7B and 7C), respectively. 35 may be arranged at intervals of 3.5 mm (FIGS. 7D and 7E), and gas holes 35 having a diameter of 1 mm are respectively spaced at intervals of 3 mm (FIGS. 7F and 7G). May be arranged. Among these, in particular, in the gas introduction shower head shown in FIGS. 7B to 7G, the interval between the gas holes 35 can be narrowed, so that it is ensured that particles stay at an intermediate position between the gas holes 35. Can be prevented.

  In the present embodiment, each gas hole 35 has an opening, but the opening of each adjacent gas hole may be connected to form a slit. At this time, the cross-sectional shape of the slit has, for example, a V shape, and the outer edge portion on the chamber facing portion side has a slope that is symmetrical with respect to the center of the slit. The inclination angle of the inclined surface is 20 ° with respect to the electrode plate space facing surface. A plurality of slits are formed so as to be concentric with respect to the center of the electrode plate 36 in plan view. Thereby, it is possible to prevent particles from staying between adjacent slits. Since the concentric slits can be easily formed, the gas introduction shower head 32 can be easily manufactured, and the cost of the gas introduction shower head 32 can be reduced.

  In the present embodiment, the gas introduction shower head 32 includes the plurality of gas holes 35. However, the gas introduction showerhead 32 is not limited to the gas holes 35, and is formed so as to penetrate the electrode plate 36 and open at the electrode plate space facing surface. What is necessary is just a flow path (not shown). The chamber facing portion side outer edge portion of the gas flow path has a slope like the gas hole 35, and the slope angle of the slope is 20 ° with respect to the electrode plate space facing surface. As a result, the processing gas 202 can be supplied to the space S without stagnation, and the gas flow path can be easily formed. Therefore, the gas introduction shower head 32 can be easily manufactured, and thus the gas The cost of the introduction shower head 32 can be reduced.

  Further, according to the gas introduction shower head 32 of the present invention, since the outer edge portion of the gas hole 35 has an inclination of 20 °, the processing gas 202 ejected from the gas hole 35 can be diffused uniformly in the space S. it can.

It is sectional drawing which shows schematic structure of the plasma processing apparatus which concerns on embodiment of this invention. It is an expanded sectional view which shows schematic structure of the gas introduction shower head in FIG. It is the top view which looked at the gas introduction shower head of FIG. 2 from the chamber opposing part side. It is a graph which shows the result of having simulated the distribution of the gas molecule ejected from the cylindrical port of the thin tube, and the result of actual measurement, (A) is Knudsen number Kn which divided the mean free path | route of the gas molecule by the cylindrical port diameter 8.93. are those when the × ^{10 -3,} (B), the Kn is obtained when the 8.93 × ^{10 -2,} (C) is in a state in which the Kn is 0.893, ( D) is when Kn is 8.93. It is process drawing which shows the formation method of each gas hole in FIG. It is an expanded sectional view showing a schematic structure of a modification of a gas introduction shower head. It is the top view seen from the chamber opposing surface side of the modification of a gas introduction shower head, (A) shows the case where a gas hole with a diameter of 2 mm is arrange | positioned at intervals of 5 mm, respectively (B), (C ) Shows a case where gas holes with a diameter of 2 mm are arranged at intervals of 4 mm, and (D) and (E) show gas holes with a diameter of 1.5 mm at intervals of 3.5 mm, respectively. (F) and (G) show cases where gas holes with a diameter of 1 mm are arranged at intervals of 3 mm, respectively. It is a figure explaining the gas flow in the chamber in the conventional plasma processing apparatus. It is a figure explaining the particle | grains which generate | occur | produced in the chamber in the conventional plasma processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Plasma processing apparatus 11 Chamber 12 Susceptor 32 Gas introduction shower head 35 Gas hole 201 Slope S Space W Wafer

Claims (7)

A gas supply member disposed in a chamber included in the plasma processing apparatus, comprising: a plane facing the internal space of the chamber; and a plurality of gas holes perforated so as to be orthogonal to the plane, wherein the plurality of gases In the gas supply member that supplies gas from the hole to the internal space,
The outer edge portion of the gas hole in the plane includes a slope corresponding to the flow of gas ejected from the gas hole,
Wherein the beveled surface, see contains either at least planar and curved shape between the gas holes adjacent the gas supply, characterized in that it consists of only the inclined surface such that the plane is no longer present between the gas holes Element.   The gas supply member according to claim 1, wherein the inclined surface is a surface including any one of a conical surface, a spherical surface, a parabolic surface, or a combination thereof.   3. The gas supply member according to claim 1, wherein an angle formed by the inclined surface and the plane is equal to or greater than an angle formed by a distribution of gas ejected from the gas hole and the plane.   The gas supply member according to any one of claims 1 to 3, wherein an angle formed by the inclined surface and the plane is 20 ° or more.   The gas supply member according to any one of claims 1 to 4, wherein the inclined surface has n-fold rotational symmetry (n = 2 to ∞) with respect to a central axis of the gas hole. In a plasma processing apparatus comprising: a chamber that accommodates an object to be processed; and a gas supply member that is disposed in the chamber and supplies gas to the internal space of the chamber.
The gas supply member includes a plane facing the internal space and a plurality of gas holes drilled to be orthogonal to the plane , the gas holes supplying the gas to the internal space, and the gas holes The outer edge portion of the plane of the above comprises a slope corresponding to the flow of gas ejected from the gas hole,
Wherein the beveled surface, viewed contains any of the flat surface and a curved surface at least, the shape between the gas holes adjacent, between the gas holes plasma processing apparatus characterized by comprising only the slope such that the plane is eliminated . The plasma processing apparatus according to claim 6 , wherein the inclined surface is a surface including any one of a conical surface, a spherical surface, a parabolic surface, or a combination thereof.

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