CN112908886B - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN112908886B CN112908886B CN201911136133.0A CN201911136133A CN112908886B CN 112908886 B CN112908886 B CN 112908886B CN 201911136133 A CN201911136133 A CN 201911136133A CN 112908886 B CN112908886 B CN 112908886B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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Abstract
The present disclosure provides a semiconductor processing apparatus. The semiconductor processing apparatus includes a chamber body having an interior volume; a substrate support pedestal disposed in the interior space; a gas outlet member positioned above the substrate support pedestal within the interior space and having a plurality of dispensing nozzles; and a gas guide device located between the gas outlet member and the substrate support pedestal. The gas directing arrangement includes a plurality of flap elements pivotably disposed about the distribution nozzle of the gas outlet member and circumferentially overlapping one another and configured to dynamically adjust an output gas distribution on the substrate support pedestal.
Description
Technical Field
The present disclosure relates to a semiconductor processing apparatus, and more particularly, to a semiconductor processing apparatus having a gas outlet member.
Background
Modern Integrated Circuits (ICs) are designed to contain high feature densities and may include millions of components, such as transistors, capacitors, resistors, and the like. The demand for greater circuit density requires a reduction in the size (or feature size) of the integrated circuit components. The minimum dimension is commonly referred to as the Critical Dimension (CD). CD may represent the minimum width of a feature, such as a line, trench, pitch, stack, opening, spacing between lines, and the like.
As CDs shrink, the process conditions for manufacturing ICs become more important to maintain high throughput. For example, in a processing chamber of a semiconductor device, process uniformity across the substrate is critical to maintaining high yield.
Disclosure of Invention
According to an embodiment, one aspect of the present disclosure provides a semiconductor processing apparatus. The semiconductor processing apparatus includes a chamber body having an interior volume; a substrate support pedestal disposed in the interior space; a gas outlet member positioned above the substrate support pedestal within the interior space and having a plurality of dispensing nozzles; and a gas guide device is located between the gas outlet member and the substrate support pedestal. The gas directing arrangement includes a plurality of flap elements pivotably disposed about the distribution nozzle of the gas outlet member and circumferentially overlapping one another and configured to dynamically adjust an output gas distribution on the substrate support pedestal.
According to an embodiment, one aspect of the present disclosure provides a method for processing a semiconductor device inside a chamber. The method comprises the following steps: performing an etch process in the chamber body; monitoring a feature of a substrate being etched in an etching process; and according to this feature, adjusting a gas directing arrangement between a gas outlet member located inside the chamber body and the substrate support pedestal. The gas directing arrangement defines an adjustable channel having a substantially circumferentially continuous boundary to dynamically adjust an output gas distribution on the substrate support pedestal.
According to an embodiment, one aspect of the present disclosure provides a gas guiding device configured to be arranged between a gas outlet member having a plurality of distribution nozzles and a substrate support pedestal. The gas guiding device includes: a guide ring configured to be disposed about the dispensing nozzle; and a plurality of flap elements pivotably connected to the guide ring and circumferentially overlapping each other configured to dynamically adjust an output gas distribution on the substrate.
Drawings
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
Fig. 1 illustrates a cross-sectional view of a semiconductor processing apparatus according to some embodiments of the present disclosure.
Figure 2 illustrates a cross-sectional view of a semiconductor processing apparatus according to some embodiments of the present disclosure.
Fig. 3 illustrates a bottom view of a gas directing device according to some embodiments of the present disclosure.
Fig. 4 illustrates a side view of a gas directing device according to some embodiments of the present disclosure.
Fig. 5 illustrates a side view of a gas directing device according to some embodiments of the present disclosure.
Fig. 6 illustrates a cross-sectional view of a semiconductor processing apparatus with gases flowing downward in converging paths, according to some embodiments of the present disclosure.
Fig. 7 illustrates a flow diagram of a method for processing a semiconductor substrate according to some embodiments of the present disclosure.
It is to be noted, however, that the appended drawings illustrate only exemplary embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
It should be noted that these drawings are intended to illustrate the general nature of methods, structures and/or materials used in certain exemplary embodiments, and to supplement the written description provided below. However, the drawings are not to scale and may not accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as defining or limiting the scope of values or characteristics encompassed by example embodiments. For example, the relative thicknesses and positions of layers, regions and/or structural components may be reduced or exaggerated for clarity. The use of similar or identical reference numbers in the various figures is intended to indicate the presence of similar or identical components or features.
Description of the main elements
Detailed Description
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
The present disclosure now will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the disclosure are shown. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Like reference numerals refer to like components throughout.
The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Further, as used herein, the terms "comprises," "comprising," "includes" and/or "including" or "having" and/or "having," integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Furthermore, unless otherwise explicitly defined herein, terms such as those defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Embodiments of the present disclosure generally relate to a method and apparatus for manufacturing semiconductor substrates in a processing chamber that utilizes a showerhead (also referred to as a gas distribution plate) to introduce gases into the chamber. One skilled in the art will appreciate that the present disclosure may be practiced using other forms of plasma etch chambers, including Reactive Ion Etch (RIE) chambers, electron Cyclotron Resonance (ECR) chambers, and the like. Furthermore, embodiments of the present disclosure may be used in any processing chamber where flow control during processing may improve process uniformity across the surface of a substrate, such as Atomic Layer Deposition (ALD) chambers, chemical Vapor Deposition (CVD) chambers, plasma enhanced chamber chemical vapor deposition (PECVD) chambers, magnetically enhanced plasma processing chambers, and the like.
Exemplary embodiments will be described below with reference to fig. 1 to 7. Detailed description the present disclosure will be described in detail with reference to the accompanying drawings, wherein the depicted elements are not necessarily shown to scale. The same or similar elements will be given the same or similar reference numerals or similar terms.
Fig. 1 shows a cross-sectional view of a semiconductor processing apparatus 100 according to the present disclosure.
The exemplary semiconductor processing apparatus 100 includes a chamber body 110 having an interior volume 111. The inner space 111 is coupled to a vacuum pump (not shown in fig. 1) for evacuating the inner space 111.
A substrate support pedestal 120 is disposed in the interior volume 111 at the bottom of the chamber body 110 below the gas outlet member 130. The substrate support pedestal 120 is configured to support a substrate S1. In the embodiment illustrated in fig. 1, and with reference to fig. 1, the substrate support pedestal 120 includes an electrostatic chuck (ESC) 121 and an edge ring (edge ring) 122, the edge ring 122 being configured to laterally surround the substrate S 1 。
A gas inlet 140 coupled to a gas source (not shown in fig. 1) is located before the gas outlet means 130. The gas inlet 140 is used to introduce gas provided by a gas source into the gas chamber 111a defined by the gas outlet member 130.
The gas outlet member 130 is positioned above the substrate support pedestal 120 within the interior space 111. The gas outlet member 130 includes a plurality of dispensing nozzles (dispense nozzles) 131. As shown in fig. 1, the distribution nozzle 131 is an opening configured to allow the gas inside the gas chamber 111a to move downward toward the substrate support pedestal 120.
In some embodiments of the present disclosure, the semiconductor processing apparatus 100 may be configured to perform an etching process. In such embodiments, when the etching process is performed quickly, the parts of the semiconductor processing apparatus 100 may be gradually etched over time, which may cause deterioration in process uniformity. For example, it is possible to corrodeIs carved on the substrate S 1 Lateral edge rings 122. In some cases, the facing substrate S of the edge ring 122 1 May be recessed by plasma erosion, thereby defining a gap 122a, the gap 122a exposing the substrate S 1 The side of (a). Accordingly, the plasma within the inner space 111 may flow into the gap 122a, and thus the substrate S may be disturbed 1 Plasma distribution over the substrate. Thus, in the subsequent process, the substrate S 1 May not be consistent, which may seriously affect yield. In this case, in order to form the substrate S 1 To maintain a uniform plasma distribution, it may be desirable to shorten the maintenance cycle (maintence cycle) of the edge ring 122.
Fig. 2 shows a cross-sectional view of a semiconductor processing apparatus 200 according to the present disclosure.
The semiconductor processing apparatus 200 includes a chamber body 210 having an interior volume 211. The interior space 211 is coupled to a vacuum pump (not shown in fig. 2) for vacuum-pumping the interior space 211. The interior volume 211 may be connected to a vacuum pump through an exhaust port (not shown in figure 2) through a wall of the chamber body 210.
The substrate support pedestal 220 is disposed in the internal space 211 at the bottom of the chamber body 210 below the gas outlet member 230. The substrate support pedestal 220 may be coupled to an RF bias source (RF bias source) capable of generating an RF signal of adjustable frequency and power. Alternatively, the RF bias source may be a DC or pulsed DC source. The substrate support pedestal 220 may include an electrostatic chuck (ESC) 221 and an edge ring 222, the ESC 221 being used to hold the substrate S during processing 2 Concentrically held on the surface of the substrate support pedestal 220. The edge ring 222 laterally surrounds the substrate S 2 . The electrostatic chuck 221 may be controlled by a dc power source.
The gas inlet 213 is connected to a gas source (not shown in fig. 2) and is located above the gas outlet member 230. As shown in fig. 2, the gas inlet 213 is located in the top wall 212 of the chamber body 210. The gas inlet 213 serves to introduce gas supplied from a gas source into the gas chamber 211a defined by the gas outlet member 230. In the present disclosure, the gas inlet 213, also referred to as a vortex inducing gas inlet, is configured to cause the gas to form a vortex about a centerline of the chamber body 210 before passing through the gas outlet member 230.
The gas outlet member 230 is located within the interior space 211 above the substrate support pedestal 220. As shown in fig. 2, the gas outlet member 230 includes a mounting plate 233, a plate body 231, and an annular outer wall 234. A mounting plate 233 is mounted to the top wall 212 and is connected to the plate body 231 by an annular outer wall 234. The air chamber 211a is defined by the mounting plate 233, the plate main body 231, and the annular outer wall 234. The gas chamber 211a may be cylindrical. In some embodiments, the gas chamber 211a may have other geometries. The gas chamber 211a is configured to receive gas from at least one gas inlet 213.
The plate body 231 includes a plurality of dispensing nozzles 232. In some embodiments of the present disclosure, the dispensing nozzle 232 may be a structure that allows the gas within the gas chamber 211a to exit the gas chamber 211 a. For example, the dispensing nozzle 232 may be a vent, or a short tube with a taper or constriction for directing the airflow. As shown in the embodiment of fig. 2, the dispensing nozzle 232 may be an opening formed on the plate body 231, the dispensing nozzle 232 configured to allow gas inside the plenum 211a to move downward toward the substrate support pedestal 220.
The gas guide 240 includes: a guide ring (guide ring) 242 configured to be arranged around the dispensing nozzle 232; and a plurality of flap elements (great elements) 241. Flap element 241 is pivotably arranged around dispensing nozzle 232 of gas outlet member 230. The flap elements 241 overlap each other in the circumferential direction of the guide ring (guide ring) 242. In the embodiment shown in fig. 2, guide ring 242 is mounted on gas outlet member 230. The flap elements 241 are pivotally attached to the guide ring 242 in a pivotable manner and overlap each other in the circumferential direction in a circumferential arrangement (encircling arrangement).
The gas guiding device 240 is configured to be disposed between the gas outlet member 230 and the substrate S 2 In the meantime. In some embodiments according to the present disclosure, the gas guiding device 240 is located in the height direction between the gas outlet member 230 and the substrate support pedestal220. For example, the guide ring 242 can be mounted laterally on the gas outlet member 230 in such a manner that the flap element 241 is located between the gas outlet member 230 and the substrate support pedestal 220 in the height direction. In the embodiment shown in fig. 2, the guide ring 242 is mounted on the bottom surface of the gas outlet member 230, the guide ring 242 and the flap element 241 being located between the gas outlet member 230 and the substrate support pedestal 220 in the height direction.
The guide ring 242 may comprise metal. For example, the guide ring 242 may alternatively comprise steel and stainless steel. In some embodiments of the present disclosure, the guide ring 242 comprises stainless steel. In some embodiments of the present disclosure, the guide ring 242 comprises a ceramic material.
In some embodiments of the present disclosure, each flap element 241 may include a coating. In such embodiments, the flap element 241 is able to withstand plasma and is less likely to be damaged during processing performed by the apparatus 200 (e.g., etching processes). In some embodiments of the present disclosure, the guide ring 242 may also include a coating.
In some embodiments according to the present disclosure, flap element 241 may be pivotably connected to gas outlet member 230. In such an embodiment, the guide ring 242 may be omitted.
The flap member 241 is configured to dynamically adjust the distribution of the output gas across the substrate support pedestal 220. In one case, when the substrate S 2 While supported on the substrate support pedestal 220, the output gas is distributed over the substrate S 2 The above. The shape of the passageway P defined by the gas guiding means 240 is a key factor in being able to adjust the output gas distribution ideally. To this end, in the present exemplary embodiment, the flap elements 241 are arranged in a circumferentially overlapping manner, which enables them to cooperatively define an adjustable channel P having a substantially circumferentially continuous boundary. For example, a gas flow from the gas outlet member 230 and through the gas guiding means 240 will be deflected by the set of flap elements 241. The airflow may remain laminar and continue to the circumferential edges of the flap elements 241 without leaking between the flap elements 241. The shape of the passageway P can be controlled by the drive flap element. The flap element 241 can be drivenMove together toward or away from the substrate S 2 While maintaining the hooked overlapping arrangement, thereby enabling adjustment of the shape of the passageway P. Thus, the distribution of the output gas at the support pedestal 220 may be controlled.
In some embodiments of the present disclosure, at least one of the flap members 241 is configured to receive an external drive source providing actuation to thereby control the flap member 241 to pivot toward or away from the center C-line of the substrate support pedestal 220 when a driving force is provided.
Fig. 3 may be a bottom view of the gas introduction device 240 taken along line iii-iii in fig. 2. As described previously, the flap elements 241 overlap each other in a circumferentially surrounding arrangement, and therefore, the flap elements 241 can be interlocked (interlocked). Thus, in the embodiment shown in fig. 3, when one of the valve elements 241 is pivoted, an adjacent valve element 241 is actuated. In such an embodiment, when only one flap element 241 is actuated, all flap elements 241 may pivot simultaneously.
In the embodiment shown in fig. 2, each flap element 241 is coupled to an actuator 243, the actuator 243 being configured to provide a driving force to adjust the pivotal deployment of the flap element 241. The drive mechanism may include a motor 250, the motor 250 coupled to at least one of the plurality of flap elements 241 via a corresponding actuator 243. In these embodiments, flap element 241 may be driven by motor 250. Under the driving force from the actuator 243, the flap element 241 can be pivotally moved toward or away from the centerline C of the substrate support pedestal 220 while maintaining the circumferential overlapping arrangement.
In some embodiments of the present disclosure, the drive mechanism may further include a controller 260 electrically connected to the motor 250 and a user interface 270 located outside the chamber body 210. In such embodiments, an operator may control the motor 250 by operating the user interface 270.
In some embodiments, the flap element 241 can be pivotally coupled to the guide ring 242 via a hinge such that the flap element 241 can be actuated by hand. In such embodiments, the drive mechanism and actuator 243 may be omitted.
In the embodiment shown in fig. 2, the angle α between the vertical line L and each of the plurality of flap elements 241 can be adjusted in the range of about 0 to 90 degrees. In some embodiments of the present disclosure, the angle α is in the range of about 0 to 45 degrees. Within this range of angle α, the passageway P may be maintained to facilitate regulation of the output gas at the substrate S 2 The shape of the distribution of (a).
In the embodiment shown in FIG. 2, the diameter D of the opening defined by the tips of the plurality of flap elements 241 p With the substrate S on the substrate supporting pedestal 220 2 Diameter D of W The ratio therebetween may be adjusted in the range of about 90% to 110%. In one embodiment, the ratio is about 95% to 105%. By such a ratio, the output gas can be favorably adjusted on the substrate S 2 The distribution of the side portions of (a).
In some embodiments of the present disclosure, the diameter D of the opening defined by the tips of the plurality of flap elements 241 p Can be adjusted in the range of about 295mm to 305 mm. In one case, the substrate S 2 Diameter D of W Is 300mm, so the opening and the substrate S 2 Less than 5mm in diameter. In this case, the diameter D of the opening defined by the tips of the plurality of flap elements 241 p And a substrate S 2 Diameter D of W The ratio therebetween is in the range of about 98% to 102%, which falls within the range of about 95% to 105%.
FIGS. 4 and 5 show two different diameters D, respectively, of the opening defined by the cusps of the flap elements p Schematic diagram of (a). Diameter D p Can be increased by pivoting the flap element 241 away from the centerline C and can be decreased by pivoting the flap element 241 toward the centerline C.
In some cases, the edge ring 222 may be etched, and thus the plasma within the interior space 211 may flow to the substrate S 2 Such that features (features) thereon may be over-etched. In such a case, when the substrate S is monitored 2 The actual size of the features near the side edges may be found to be smaller than the expected CD size. To is coming toThe requirement to maintain a desired CD size during subsequent procedures may require that the flap element 241 be driven to pivot toward the centerline C.
Referring to fig. 6, it is shown that the flap element 241 has been driven to pivot towards the centre line C. The gas 601 exiting from the gas outlet member 230 may flow downward in a converging path, thereby being formed at the substrate S 2 Narrower output gas distribution. As a result, the substrate S is formed in a subsequent process 2 May remain substantially consistent with the expected CD dimensions.
In some cases, on the substrate S 2 May be monitored for an actual size greater than the expected CD size. For example, when the flap element 241 is pivoted in advance toward the center line C of the substrate support pedestal 220, at the substrate S 2 The output gas distribution above may be too narrow. Thus, the substrate S 2 May not be sufficiently etched. In such a case, the flap element 241 can be driven to pivot away from the centerline C to rest on the substrate S 2 Resulting in a wider gas distribution to maintain the characteristic physical dimensions near the sides during subsequent processing.
Figure 7 is a block diagram illustrating a semiconductor device (e.g., substrate S) for processing the interior of a chamber body (e.g., chamber body 210) according to some embodiments of the present disclosure 2 ) Is a flow chart of the method of.
The program P701: an etch process is performed in the chamber body.
The program P702: monitoring a substrate (e.g., substrate S) being etched during an etch process 2 ) The method is characterized in that.
Program P703: a gas directing device (e.g., gas directing device 240) positioned between a gas outlet member (e.g., gas outlet member 230) and a substrate support pedestal (e.g., substrate support pedestal 220) within the chamber body is adjusted according to the size of the features of the substrate, thereby dynamically adjusting the output gas distribution on the substrate support pedestal. The gas guiding means defines an adjustable channel having a substantially circumferentially continuous border.
In some embodiments of the present disclosure, procedure P703 includes adjusting at least one of the plurality of flap elements according to a characteristic of the base plate such that the flap element pivots toward or away from a centerline of the base plate. The flap elements together maintain an annular overlapping arrangement to adjust the shape of the channel.
In some embodiments of the present disclosure, in procedure P703, the angle between the vertical line (e.g., vertical line L) and each of the plurality of lobe elements is about 0 to 45 degrees.
In some embodiments of the present disclosure, in procedure P703, a diameter of an opening defined by tips of a plurality of flap elements (e.g., D) p ) In the range of about 295mm to 305 mm.
In some embodiments of the present disclosure, in procedure P703, the diameter of the substrate (e.g., D) w ) The ratio to the diameter of the opening defined by the tips of the plurality of flap elements is in the range of about 95% to 105%.
In some embodiments of the present disclosure, in procedure P703, a user interface (e.g., user interface 270) is operated such that a drive mechanism (e.g., motor 250 coupled with controller 260) electrically connected to the user interface drives a plurality of lobe elements.
Accordingly, one aspect of the present disclosure provides a semiconductor processing apparatus. The semiconductor processing apparatus includes a chamber body having an interior volume; a substrate support pedestal disposed in the interior space; a gas outlet member having a plurality of dispensing nozzles positioned above the substrate support pedestal within the interior volume; and a gas guide device is located between the gas outlet member and the substrate support pedestal. The gas directing arrangement includes a plurality of flap elements pivotably disposed about the distribution nozzle of the gas outlet member and circumferentially overlapping one another and configured to dynamically adjust an output gas distribution on the substrate support pedestal.
In some embodiments of the present disclosure, the chamber body includes a top wall. The gas outlet member includes a mounting plate, an annular outer wall and a plate body. The mounting plate is mounted to the top wall. The plate body is coupled to the mounting plate by an annular outer wall. The mounting plate, the annular outer wall and the plate body define an air outlet chamber. A plurality of distribution nozzles are formed on the plate body and configured to allow gas within the gas chamber to move downward toward the substrate support pedestal.
In some embodiments of the present disclosure, the gas guiding device further comprises a guiding ring mounted on the gas outlet member. A plurality of flap elements are pivotally connected to the guide ring.
In some embodiments of the present disclosure, the semiconductor processing apparatus further comprises a motor coupled to at least one of the flap elements such that the flap elements are pivotable toward or away from a centerline of the substrate support pedestal and maintain a circumferentially overlapping arrangement.
In some embodiments of the present disclosure, the semiconductor processing apparatus further comprises an actuator, a controller electrically connected to the actuator, and a user interface located outside the chamber body and electrically connected to the controller. The motor is coupled to the flap element via an actuator.
In some embodiments of the present disclosure, the angle a between the vertical line and each of the plurality of lobe elements is adjustable in a range of approximately 0 degrees to 45 degrees.
In some embodiments of the present disclosure, the diameter of the opening defined by the tip of the flap element is adjustable in the range of about 295mm to 305 mm.
In some embodiments of the present disclosure, a ratio between a diameter of an opening defined by tips of the flap elements and a diameter of a substrate supported on the substrate support pedestal is about 95% to 105%.
In some embodiments of the present disclosure, the flap element comprises a metal.
In some embodiments of the present disclosure, the guide ring comprises a metal.
In some embodiments of the disclosure, each of the valve elements further comprises a coating.
Accordingly, one aspect of the present disclosure provides a method for processing a semiconductor device inside a chamber. The method comprises the following steps: performing an etch process in the chamber body; monitoring a feature of a substrate being etched in an etching process; and according to this feature, adjusting a gas guiding means between a gas outlet member located inside the chamber body and the substrate support pedestal. The gas directing arrangement defines an adjustable channel having a substantially circumferentially continuous boundary to dynamically adjust an output gas distribution on the substrate support pedestal.
In some embodiments of the present disclosure, the gas guiding arrangement comprises a plurality of flap elements pivotally arranged around the gas outlet member and circumferentially overlapping each other and configured to dynamically adjust an output gas distribution on the substrate support pedestal. The adjusting the gas guiding means comprises adjusting at least one of the flap elements in dependence of the characteristics of the base such that the flap element is pivoted towards or away from the centre line of the base keeping the hooked overlapping arrangement, thereby adjusting the shape of the channel.
In some embodiments of the present disclosure, an angle between a vertical line and each of the flap elements is in a range of about 0 to 45 degrees when adjusting at least one of the flap elements.
In some embodiments of the present disclosure, a diameter of an opening defined by a tip of the flap element is in a range of about 295mm to 305mm when adjusting at least one of the flap elements.
In some embodiments of the present disclosure, when adjusting at least one of the flap elements, a ratio between a diameter of an opening defined by a tip of the flap element and a diameter of a substrate supported on the substrate support pedestal ranges from about 95% to 105%.
In some embodiments of the present disclosure, when at least one of the flap elements is adjusted, the user interface is operated such that a drive mechanism electrically connected to the user interface drives the flap element.
Accordingly, one aspect of the present disclosure provides a gas guiding device configured to be arranged between a gas outlet member having a plurality of dispensing nozzles and a substrate support pedestal. The gas guiding device includes: a guide ring configured to be disposed around the dispensing nozzle; and a plurality of flap elements pivotably connected to the guide ring and circumferentially overlapping each other configured to dynamically adjust an output gas distribution on the substrate.
In some embodiments of the present disclosure, the angle between the vertical line and each of the flap elements is adjustably in the range of about 0 to 45 degrees.
In some embodiments of the present disclosure, the diameter of the opening defined by the tips of the flap elements is adjustably in the range of about 295mm to 305 mm.
The embodiments shown and described above are only examples. Many details are often found in the art, such as radiation measurement panels and other features of the device. Accordingly, many such details are not shown or described. I.e. so that the numerous features and advantages of the present technology and details of structure and function have been set forth in the foregoing description, the disclosure is illustrative only, and changes may be made in detail, especially in matters of shape and size. And all fractional permutations that fall within the principle scope, up to and including the full scope defined by the broad meaning of the terms in which the claims are entitled. It is therefore to be understood that the above described embodiments may be modified within the scope of the appended claims.
Claims (10)
1. A semiconductor processing apparatus, comprising
A chamber body having an interior space;
a substrate support pedestal disposed in the interior space;
a gas outlet member having a plurality of dispensing nozzles positioned above the substrate support pedestal within the interior space; and
a gas directing arrangement between the gas outlet member and the substrate support pedestal, the gas directing arrangement comprising a plurality of flap elements pivotably arranged about a distribution nozzle of the gas outlet member and circumferentially overlapping one another and configured to dynamically adjust an output gas distribution on the substrate support pedestal.
2. The semiconductor processing apparatus of claim 1,
the chamber body includes a top wall;
the gas outlet component comprises a mounting plate, an annular outer wall and a plate body;
the mounting plate is mounted on the top wall;
the plate body is coupled to a mounting plate by an annular outer wall;
the mounting plate, the annular outer wall and the plate body define an air outlet chamber; and
the distribution nozzle is formed on the plate body and configured to allow the gas within the gas chamber to move downward toward the substrate support pedestal.
3. The semiconductor processing apparatus of claim 1,
the gas guiding arrangement further comprises a guide ring mounted on the gas outlet member; and
the flap element is pivotally connected to the guide ring.
4. The semiconductor processing apparatus of claim 1, further comprising a motor coupled to at least one of the flap elements such that the flap elements are pivotable toward or away from a centerline of the substrate support pedestal and maintain a circumferentially overlapping arrangement.
5. The semiconductor processing apparatus of claim 4, further comprising
An actuator, wherein the motor is coupled to the flap element via the actuator;
a controller electrically connected to the actuator; and
a user interface external to the chamber body and electrically connected to the controller.
6. The semiconductor processing apparatus of claim 1, wherein an angle a between a vertical line and each of the lobe elements is adjustable in a range of 0 degrees to 45 degrees.
7. The semiconductor processing apparatus of claim 1, wherein a diameter of an opening defined by the tips of the flap elements is adjustable within a range of 295mm to 305 mm.
8. The semiconductor processing apparatus of claim 7, wherein a ratio between a diameter of an opening defined by tips of the flap elements and a diameter of a substrate supported on the substrate support pedestal is between 95% and 105%.
9. The semiconductor processing apparatus of claim 1, wherein the flap element comprises a metal.
10. The semiconductor processing apparatus of claim 3, wherein the guide ring comprises a metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11293469A (en) * | 1998-04-13 | 1999-10-26 | Komatsu Ltd | Surface treating device and surface treating method |
| US8133349B1 (en) * | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
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| US6905079B2 (en) * | 2000-09-08 | 2005-06-14 | Tokyo Electron Limited | Shower head structure and cleaning method thereof |
| US8236105B2 (en) * | 2004-04-08 | 2012-08-07 | Applied Materials, Inc. | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| JP2006324610A (en) * | 2005-05-20 | 2006-11-30 | Matsushita Electric Ind Co Ltd | Device and method of treating substrate |
| US9021985B2 (en) * | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
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| JPH11293469A (en) * | 1998-04-13 | 1999-10-26 | Komatsu Ltd | Surface treating device and surface treating method |
| US8133349B1 (en) * | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
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