JP2003264169A5 - - Google Patents

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Publication number
JP2003264169A5
JP2003264169A5 JP2002065265A JP2002065265A JP2003264169A5 JP 2003264169 A5 JP2003264169 A5 JP 2003264169A5 JP 2002065265 A JP2002065265 A JP 2002065265A JP 2002065265 A JP2002065265 A JP 2002065265A JP 2003264169 A5 JP2003264169 A5 JP 2003264169A5
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JP
Japan
Prior art keywords
processing apparatus
plasma
processing chamber
plasma processing
chamber component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002065265A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003264169A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002065265A priority Critical patent/JP2003264169A/ja
Priority claimed from JP2002065265A external-priority patent/JP2003264169A/ja
Priority to US10/505,176 priority patent/US20050106869A1/en
Priority to AU2003221340A priority patent/AU2003221340A1/en
Priority to PCT/JP2003/002773 priority patent/WO2003077300A1/ja
Priority to CNB038057581A priority patent/CN100355039C/zh
Priority to KR10-2004-7013171A priority patent/KR20040103948A/ko
Publication of JP2003264169A publication Critical patent/JP2003264169A/ja
Publication of JP2003264169A5 publication Critical patent/JP2003264169A5/ja
Pending legal-status Critical Current

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JP2002065265A 2002-03-11 2002-03-11 プラズマ処理装置 Pending JP2003264169A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002065265A JP2003264169A (ja) 2002-03-11 2002-03-11 プラズマ処理装置
US10/505,176 US20050106869A1 (en) 2002-03-11 2003-03-10 Plasma processing apparatus
AU2003221340A AU2003221340A1 (en) 2002-03-11 2003-03-10 Plasma processing apparatus
PCT/JP2003/002773 WO2003077300A1 (en) 2002-03-11 2003-03-10 Plasma processing apparatus
CNB038057581A CN100355039C (zh) 2002-03-11 2003-03-10 等离子体处理装置
KR10-2004-7013171A KR20040103948A (ko) 2002-03-11 2003-03-10 플라즈마 처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002065265A JP2003264169A (ja) 2002-03-11 2002-03-11 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2003264169A JP2003264169A (ja) 2003-09-19
JP2003264169A5 true JP2003264169A5 (enExample) 2005-09-02

Family

ID=27800229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002065265A Pending JP2003264169A (ja) 2002-03-11 2002-03-11 プラズマ処理装置

Country Status (6)

Country Link
US (1) US20050106869A1 (enExample)
JP (1) JP2003264169A (enExample)
KR (1) KR20040103948A (enExample)
CN (1) CN100355039C (enExample)
AU (1) AU2003221340A1 (enExample)
WO (1) WO2003077300A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7648782B2 (en) 2006-03-20 2010-01-19 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4666575B2 (ja) * 2004-11-08 2011-04-06 東京エレクトロン株式会社 セラミック溶射部材の製造方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材
KR101102039B1 (ko) * 2005-06-28 2012-01-04 엘지디스플레이 주식회사 플라즈마 식각 장치용 전극 및 이를 구비하는 플라즈마식각 장치
WO2007023971A1 (ja) * 2005-08-22 2007-03-01 Tocalo Co., Ltd. 熱放射特性等に優れる溶射皮膜被覆部材およびその製造方法
WO2007023976A1 (ja) 2005-08-22 2007-03-01 Tocalo Co., Ltd. 耐損傷性等に優れる溶射皮膜被覆部材およびその製造方法
JP4571561B2 (ja) 2005-09-08 2010-10-27 トーカロ株式会社 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法
JP2007243020A (ja) * 2006-03-10 2007-09-20 Hitachi High-Technologies Corp プラズマ処理装置
KR100823881B1 (ko) * 2006-11-01 2008-04-21 피에스케이 주식회사 플라스마를 이용한 기판 처리 장치
JP4470970B2 (ja) * 2007-07-31 2010-06-02 東京エレクトロン株式会社 プラズマ処理装置
CN101740329B (zh) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 等离子处理方法
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US20130161629A1 (en) * 2011-12-27 2013-06-27 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
JP6435090B2 (ja) * 2013-10-03 2018-12-05 東京エレクトロン株式会社 プラズマ処理装置
JP6156850B2 (ja) 2014-12-25 2017-07-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
JP6950196B2 (ja) 2017-02-16 2021-10-13 三菱マテリアル株式会社 プラズマ処理装置用電極板およびプラズマ処理装置用電極板の再生方法
JPWO2020208801A1 (ja) * 2019-04-12 2021-05-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の内部部材ならびに当該内部部材の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3061346B2 (ja) * 1994-03-07 2000-07-10 東京エレクトロン株式会社 処理装置
JP3527839B2 (ja) * 1998-01-28 2004-05-17 京セラ株式会社 半導体素子製造装置用部材
JP2001139365A (ja) * 1999-11-10 2001-05-22 Nihon Ceratec Co Ltd 半導体製造装置用セラミックス部品
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
JP2001222498A (ja) * 2000-02-07 2001-08-17 Isao:Kk コミュニケーションシステム、そのためのサーバ装置、コミュニケーション方法、および、プログラムを記録したコンピュータ読み取り可能な記録媒体
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US7670688B2 (en) * 2001-06-25 2010-03-02 Applied Materials, Inc. Erosion-resistant components for plasma process chambers
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7648782B2 (en) 2006-03-20 2010-01-19 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus

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