JP2003264169A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JP2003264169A
JP2003264169A JP2002065265A JP2002065265A JP2003264169A JP 2003264169 A JP2003264169 A JP 2003264169A JP 2002065265 A JP2002065265 A JP 2002065265A JP 2002065265 A JP2002065265 A JP 2002065265A JP 2003264169 A JP2003264169 A JP 2003264169A
Authority
JP
Japan
Prior art keywords
plasma
processing apparatus
deposition
processing chamber
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002065265A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003264169A5 (enExample
Inventor
Atsushi Oyabu
淳 大藪
Akira Koshiishi
公 輿石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002065265A priority Critical patent/JP2003264169A/ja
Priority to US10/505,176 priority patent/US20050106869A1/en
Priority to AU2003221340A priority patent/AU2003221340A1/en
Priority to PCT/JP2003/002773 priority patent/WO2003077300A1/ja
Priority to CNB038057581A priority patent/CN100355039C/zh
Priority to KR10-2004-7013171A priority patent/KR20040103948A/ko
Publication of JP2003264169A publication Critical patent/JP2003264169A/ja
Publication of JP2003264169A5 publication Critical patent/JP2003264169A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2002065265A 2002-03-11 2002-03-11 プラズマ処理装置 Pending JP2003264169A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002065265A JP2003264169A (ja) 2002-03-11 2002-03-11 プラズマ処理装置
US10/505,176 US20050106869A1 (en) 2002-03-11 2003-03-10 Plasma processing apparatus
AU2003221340A AU2003221340A1 (en) 2002-03-11 2003-03-10 Plasma processing apparatus
PCT/JP2003/002773 WO2003077300A1 (en) 2002-03-11 2003-03-10 Plasma processing apparatus
CNB038057581A CN100355039C (zh) 2002-03-11 2003-03-10 等离子体处理装置
KR10-2004-7013171A KR20040103948A (ko) 2002-03-11 2003-03-10 플라즈마 처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002065265A JP2003264169A (ja) 2002-03-11 2002-03-11 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2003264169A true JP2003264169A (ja) 2003-09-19
JP2003264169A5 JP2003264169A5 (enExample) 2005-09-02

Family

ID=27800229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002065265A Pending JP2003264169A (ja) 2002-03-11 2002-03-11 プラズマ処理装置

Country Status (6)

Country Link
US (1) US20050106869A1 (enExample)
JP (1) JP2003264169A (enExample)
KR (1) KR20040103948A (enExample)
CN (1) CN100355039C (enExample)
AU (1) AU2003221340A1 (enExample)
WO (1) WO2003077300A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243020A (ja) * 2006-03-10 2007-09-20 Hitachi High-Technologies Corp プラズマ処理装置
KR100823881B1 (ko) * 2006-11-01 2008-04-21 피에스케이 주식회사 플라스마를 이용한 기판 처리 장치
US7767268B2 (en) 2005-09-08 2010-08-03 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
US8231986B2 (en) 2005-08-22 2012-07-31 Tocalo Co., Ltd. Spray coating member having excellent injury resistance and so on and method for producing the same
WO2013101423A1 (en) * 2011-12-27 2013-07-04 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
JP2015072792A (ja) * 2013-10-03 2015-04-16 東京エレクトロン株式会社 プラズマ処理装置
KR20160078890A (ko) 2014-12-25 2016-07-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 장치의 부재의 교환 판단 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4666575B2 (ja) * 2004-11-08 2011-04-06 東京エレクトロン株式会社 セラミック溶射部材の製造方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材
KR101102039B1 (ko) * 2005-06-28 2012-01-04 엘지디스플레이 주식회사 플라즈마 식각 장치용 전극 및 이를 구비하는 플라즈마식각 장치
WO2007023971A1 (ja) * 2005-08-22 2007-03-01 Tocalo Co., Ltd. 熱放射特性等に優れる溶射皮膜被覆部材およびその製造方法
US7648782B2 (en) 2006-03-20 2010-01-19 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus
JP4470970B2 (ja) * 2007-07-31 2010-06-02 東京エレクトロン株式会社 プラズマ処理装置
CN101740329B (zh) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 等离子处理方法
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
JP6950196B2 (ja) 2017-02-16 2021-10-13 三菱マテリアル株式会社 プラズマ処理装置用電極板およびプラズマ処理装置用電極板の再生方法
JPWO2020208801A1 (ja) * 2019-04-12 2021-05-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の内部部材ならびに当該内部部材の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3061346B2 (ja) * 1994-03-07 2000-07-10 東京エレクトロン株式会社 処理装置
JP3527839B2 (ja) * 1998-01-28 2004-05-17 京セラ株式会社 半導体素子製造装置用部材
JP2001139365A (ja) * 1999-11-10 2001-05-22 Nihon Ceratec Co Ltd 半導体製造装置用セラミックス部品
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
JP2001222498A (ja) * 2000-02-07 2001-08-17 Isao:Kk コミュニケーションシステム、そのためのサーバ装置、コミュニケーション方法、および、プログラムを記録したコンピュータ読み取り可能な記録媒体
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US7670688B2 (en) * 2001-06-25 2010-03-02 Applied Materials, Inc. Erosion-resistant components for plasma process chambers
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8231986B2 (en) 2005-08-22 2012-07-31 Tocalo Co., Ltd. Spray coating member having excellent injury resistance and so on and method for producing the same
US7767268B2 (en) 2005-09-08 2010-08-03 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
US8053058B2 (en) 2005-09-08 2011-11-08 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
JP2007243020A (ja) * 2006-03-10 2007-09-20 Hitachi High-Technologies Corp プラズマ処理装置
KR100823881B1 (ko) * 2006-11-01 2008-04-21 피에스케이 주식회사 플라스마를 이용한 기판 처리 장치
WO2013101423A1 (en) * 2011-12-27 2013-07-04 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
JP2015072792A (ja) * 2013-10-03 2015-04-16 東京エレクトロン株式会社 プラズマ処理装置
KR20160078890A (ko) 2014-12-25 2016-07-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 장치의 부재의 교환 판단 방법

Also Published As

Publication number Publication date
US20050106869A1 (en) 2005-05-19
KR20040103948A (ko) 2004-12-09
CN100355039C (zh) 2007-12-12
AU2003221340A1 (en) 2003-09-22
WO2003077300A1 (en) 2003-09-18
CN1643663A (zh) 2005-07-20

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