KR20040103948A - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR20040103948A
KR20040103948A KR10-2004-7013171A KR20047013171A KR20040103948A KR 20040103948 A KR20040103948 A KR 20040103948A KR 20047013171 A KR20047013171 A KR 20047013171A KR 20040103948 A KR20040103948 A KR 20040103948A
Authority
KR
South Korea
Prior art keywords
plasma
processing chamber
processing
processing apparatus
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7013171A
Other languages
English (en)
Korean (ko)
Inventor
오오야부준
고시이시아키라
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20040103948A publication Critical patent/KR20040103948A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H10P50/242—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR10-2004-7013171A 2002-03-11 2003-03-10 플라즈마 처리장치 Ceased KR20040103948A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002065265A JP2003264169A (ja) 2002-03-11 2002-03-11 プラズマ処理装置
JPJP-P-2002-00065265 2002-03-11
PCT/JP2003/002773 WO2003077300A1 (en) 2002-03-11 2003-03-10 Plasma processing apparatus

Publications (1)

Publication Number Publication Date
KR20040103948A true KR20040103948A (ko) 2004-12-09

Family

ID=27800229

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7013171A Ceased KR20040103948A (ko) 2002-03-11 2003-03-10 플라즈마 처리장치

Country Status (6)

Country Link
US (1) US20050106869A1 (enExample)
JP (1) JP2003264169A (enExample)
KR (1) KR20040103948A (enExample)
CN (1) CN100355039C (enExample)
AU (1) AU2003221340A1 (enExample)
WO (1) WO2003077300A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101102039B1 (ko) * 2005-06-28 2012-01-04 엘지디스플레이 주식회사 플라즈마 식각 장치용 전극 및 이를 구비하는 플라즈마식각 장치

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4666575B2 (ja) * 2004-11-08 2011-04-06 東京エレクトロン株式会社 セラミック溶射部材の製造方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材
KR20080028498A (ko) * 2005-08-22 2008-03-31 도카로 가부시키가이샤 열방사 특성 등이 우수한 용사 피막 피복 부재 및 그 제조방법
WO2007023976A1 (ja) 2005-08-22 2007-03-01 Tocalo Co., Ltd. 耐損傷性等に優れる溶射皮膜被覆部材およびその製造方法
JP4571561B2 (ja) 2005-09-08 2010-10-27 トーカロ株式会社 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法
JP2007243020A (ja) * 2006-03-10 2007-09-20 Hitachi High-Technologies Corp プラズマ処理装置
US7648782B2 (en) 2006-03-20 2010-01-19 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus
KR100823881B1 (ko) * 2006-11-01 2008-04-21 피에스케이 주식회사 플라스마를 이용한 기판 처리 장치
JP4470970B2 (ja) * 2007-07-31 2010-06-02 東京エレクトロン株式会社 プラズマ処理装置
CN101740329B (zh) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 等离子处理方法
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US20130161629A1 (en) * 2011-12-27 2013-06-27 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
JP6435090B2 (ja) * 2013-10-03 2018-12-05 東京エレクトロン株式会社 プラズマ処理装置
JP6156850B2 (ja) 2014-12-25 2017-07-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
JP6950196B2 (ja) * 2017-02-16 2021-10-13 三菱マテリアル株式会社 プラズマ処理装置用電極板およびプラズマ処理装置用電極板の再生方法
JPWO2020208801A1 (ja) * 2019-04-12 2021-05-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の内部部材ならびに当該内部部材の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3061346B2 (ja) * 1994-03-07 2000-07-10 東京エレクトロン株式会社 処理装置
JP3527839B2 (ja) * 1998-01-28 2004-05-17 京セラ株式会社 半導体素子製造装置用部材
JP2001139365A (ja) * 1999-11-10 2001-05-22 Nihon Ceratec Co Ltd 半導体製造装置用セラミックス部品
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
JP2001222498A (ja) * 2000-02-07 2001-08-17 Isao:Kk コミュニケーションシステム、そのためのサーバ装置、コミュニケーション方法、および、プログラムを記録したコンピュータ読み取り可能な記録媒体
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US7670688B2 (en) * 2001-06-25 2010-03-02 Applied Materials, Inc. Erosion-resistant components for plasma process chambers
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101102039B1 (ko) * 2005-06-28 2012-01-04 엘지디스플레이 주식회사 플라즈마 식각 장치용 전극 및 이를 구비하는 플라즈마식각 장치

Also Published As

Publication number Publication date
CN100355039C (zh) 2007-12-12
AU2003221340A1 (en) 2003-09-22
US20050106869A1 (en) 2005-05-19
JP2003264169A (ja) 2003-09-19
WO2003077300A1 (en) 2003-09-18
CN1643663A (zh) 2005-07-20

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