KR20040103948A - 플라즈마 처리장치 - Google Patents
플라즈마 처리장치 Download PDFInfo
- Publication number
- KR20040103948A KR20040103948A KR10-2004-7013171A KR20047013171A KR20040103948A KR 20040103948 A KR20040103948 A KR 20040103948A KR 20047013171 A KR20047013171 A KR 20047013171A KR 20040103948 A KR20040103948 A KR 20040103948A
- Authority
- KR
- South Korea
- Prior art keywords
- plasma
- processing chamber
- processing
- processing apparatus
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000005507 spraying Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 abstract description 42
- 229920000642 polymer Polymers 0.000 abstract description 35
- 238000001020 plasma etching Methods 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000002245 particle Substances 0.000 abstract description 9
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 238000005459 micromachining Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 40
- 239000007789 gas Substances 0.000 description 26
- 239000012212 insulator Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2002-00065265 | 2002-03-11 | ||
| JP2002065265A JP2003264169A (ja) | 2002-03-11 | 2002-03-11 | プラズマ処理装置 |
| PCT/JP2003/002773 WO2003077300A1 (en) | 2002-03-11 | 2003-03-10 | Plasma processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040103948A true KR20040103948A (ko) | 2004-12-09 |
Family
ID=27800229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7013171A Ceased KR20040103948A (ko) | 2002-03-11 | 2003-03-10 | 플라즈마 처리장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20050106869A1 (enExample) |
| JP (1) | JP2003264169A (enExample) |
| KR (1) | KR20040103948A (enExample) |
| CN (1) | CN100355039C (enExample) |
| AU (1) | AU2003221340A1 (enExample) |
| WO (1) | WO2003077300A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101102039B1 (ko) * | 2005-06-28 | 2012-01-04 | 엘지디스플레이 주식회사 | 플라즈마 식각 장치용 전극 및 이를 구비하는 플라즈마식각 장치 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4666575B2 (ja) * | 2004-11-08 | 2011-04-06 | 東京エレクトロン株式会社 | セラミック溶射部材の製造方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材 |
| WO2007023971A1 (ja) * | 2005-08-22 | 2007-03-01 | Tocalo Co., Ltd. | 熱放射特性等に優れる溶射皮膜被覆部材およびその製造方法 |
| WO2007023976A1 (ja) | 2005-08-22 | 2007-03-01 | Tocalo Co., Ltd. | 耐損傷性等に優れる溶射皮膜被覆部材およびその製造方法 |
| JP4571561B2 (ja) | 2005-09-08 | 2010-10-27 | トーカロ株式会社 | 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法 |
| JP2007243020A (ja) * | 2006-03-10 | 2007-09-20 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| US7648782B2 (en) | 2006-03-20 | 2010-01-19 | Tokyo Electron Limited | Ceramic coating member for semiconductor processing apparatus |
| KR100823881B1 (ko) * | 2006-11-01 | 2008-04-21 | 피에스케이 주식회사 | 플라스마를 이용한 기판 처리 장치 |
| JP4470970B2 (ja) * | 2007-07-31 | 2010-06-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN101740329B (zh) * | 2008-11-17 | 2012-12-05 | 中芯国际集成电路制造(上海)有限公司 | 等离子处理方法 |
| US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
| US20130161629A1 (en) * | 2011-12-27 | 2013-06-27 | Applied Materials, Inc. | Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application |
| JP6435090B2 (ja) * | 2013-10-03 | 2018-12-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP6156850B2 (ja) | 2014-12-25 | 2017-07-05 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法 |
| JP6950196B2 (ja) | 2017-02-16 | 2021-10-13 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板およびプラズマ処理装置用電極板の再生方法 |
| JPWO2020208801A1 (ja) * | 2019-04-12 | 2021-05-06 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理装置の内部部材ならびに当該内部部材の製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3061346B2 (ja) * | 1994-03-07 | 2000-07-10 | 東京エレクトロン株式会社 | 処理装置 |
| JP3527839B2 (ja) * | 1998-01-28 | 2004-05-17 | 京セラ株式会社 | 半導体素子製造装置用部材 |
| JP2001139365A (ja) * | 1999-11-10 | 2001-05-22 | Nihon Ceratec Co Ltd | 半導体製造装置用セラミックス部品 |
| JP3510993B2 (ja) * | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | プラズマ処理容器内部材およびその製造方法 |
| JP2001222498A (ja) * | 2000-02-07 | 2001-08-17 | Isao:Kk | コミュニケーションシステム、そのためのサーバ装置、コミュニケーション方法、および、プログラムを記録したコンピュータ読み取り可能な記録媒体 |
| US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
| US7670688B2 (en) * | 2001-06-25 | 2010-03-02 | Applied Materials, Inc. | Erosion-resistant components for plasma process chambers |
| US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
-
2002
- 2002-03-11 JP JP2002065265A patent/JP2003264169A/ja active Pending
-
2003
- 2003-03-10 WO PCT/JP2003/002773 patent/WO2003077300A1/ja not_active Ceased
- 2003-03-10 KR KR10-2004-7013171A patent/KR20040103948A/ko not_active Ceased
- 2003-03-10 AU AU2003221340A patent/AU2003221340A1/en not_active Abandoned
- 2003-03-10 CN CNB038057581A patent/CN100355039C/zh not_active Expired - Fee Related
- 2003-03-10 US US10/505,176 patent/US20050106869A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101102039B1 (ko) * | 2005-06-28 | 2012-01-04 | 엘지디스플레이 주식회사 | 플라즈마 식각 장치용 전극 및 이를 구비하는 플라즈마식각 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050106869A1 (en) | 2005-05-19 |
| CN100355039C (zh) | 2007-12-12 |
| JP2003264169A (ja) | 2003-09-19 |
| AU2003221340A1 (en) | 2003-09-22 |
| WO2003077300A1 (en) | 2003-09-18 |
| CN1643663A (zh) | 2005-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0105 | International application |
Patent event date: 20040824 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20060417 Patent event code: PE09021S01D |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20061016 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20070515 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20061016 Comment text: Notification of reason for refusal Patent event code: PE06011S01I Patent event date: 20060417 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |