CN100355039C - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN100355039C
CN100355039C CNB038057581A CN03805758A CN100355039C CN 100355039 C CN100355039 C CN 100355039C CN B038057581 A CNB038057581 A CN B038057581A CN 03805758 A CN03805758 A CN 03805758A CN 100355039 C CN100355039 C CN 100355039C
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CN
China
Prior art keywords
plasma
processing apparatus
plasma processing
overlay film
spraying plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038057581A
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English (en)
Chinese (zh)
Other versions
CN1643663A (zh
Inventor
大薮淳
輿石公
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1643663A publication Critical patent/CN1643663A/zh
Application granted granted Critical
Publication of CN100355039C publication Critical patent/CN100355039C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
CNB038057581A 2002-03-11 2003-03-10 等离子体处理装置 Expired - Fee Related CN100355039C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP65265/2002 2002-03-11
JP2002065265A JP2003264169A (ja) 2002-03-11 2002-03-11 プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN1643663A CN1643663A (zh) 2005-07-20
CN100355039C true CN100355039C (zh) 2007-12-12

Family

ID=27800229

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038057581A Expired - Fee Related CN100355039C (zh) 2002-03-11 2003-03-10 等离子体处理装置

Country Status (6)

Country Link
US (1) US20050106869A1 (enExample)
JP (1) JP2003264169A (enExample)
KR (1) KR20040103948A (enExample)
CN (1) CN100355039C (enExample)
AU (1) AU2003221340A1 (enExample)
WO (1) WO2003077300A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4666575B2 (ja) * 2004-11-08 2011-04-06 東京エレクトロン株式会社 セラミック溶射部材の製造方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材
KR101102039B1 (ko) * 2005-06-28 2012-01-04 엘지디스플레이 주식회사 플라즈마 식각 장치용 전극 및 이를 구비하는 플라즈마식각 장치
WO2007023971A1 (ja) * 2005-08-22 2007-03-01 Tocalo Co., Ltd. 熱放射特性等に優れる溶射皮膜被覆部材およびその製造方法
WO2007023976A1 (ja) 2005-08-22 2007-03-01 Tocalo Co., Ltd. 耐損傷性等に優れる溶射皮膜被覆部材およびその製造方法
JP4571561B2 (ja) 2005-09-08 2010-10-27 トーカロ株式会社 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法
JP2007243020A (ja) * 2006-03-10 2007-09-20 Hitachi High-Technologies Corp プラズマ処理装置
US7648782B2 (en) 2006-03-20 2010-01-19 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus
KR100823881B1 (ko) * 2006-11-01 2008-04-21 피에스케이 주식회사 플라스마를 이용한 기판 처리 장치
JP4470970B2 (ja) * 2007-07-31 2010-06-02 東京エレクトロン株式会社 プラズマ処理装置
CN101740329B (zh) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 等离子处理方法
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US20130161629A1 (en) * 2011-12-27 2013-06-27 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
JP6435090B2 (ja) * 2013-10-03 2018-12-05 東京エレクトロン株式会社 プラズマ処理装置
JP6156850B2 (ja) 2014-12-25 2017-07-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
JP6950196B2 (ja) 2017-02-16 2021-10-13 三菱マテリアル株式会社 プラズマ処理装置用電極板およびプラズマ処理装置用電極板の再生方法
JPWO2020208801A1 (ja) * 2019-04-12 2021-05-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の内部部材ならびに当該内部部材の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245295A (ja) * 1994-03-07 1995-09-19 Tokyo Electron Ltd 処理装置
JPH11214365A (ja) * 1998-01-28 1999-08-06 Kyocera Corp 半導体素子製造装置用部材
JP2001139365A (ja) * 1999-11-10 2001-05-22 Nihon Ceratec Co Ltd 半導体製造装置用セラミックス部品
CN1308284A (zh) * 2000-02-07 2001-08-15 易索网络在线有限公司 通信系统及其服务器、通信方法、记录媒体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US7670688B2 (en) * 2001-06-25 2010-03-02 Applied Materials, Inc. Erosion-resistant components for plasma process chambers
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245295A (ja) * 1994-03-07 1995-09-19 Tokyo Electron Ltd 処理装置
JPH11214365A (ja) * 1998-01-28 1999-08-06 Kyocera Corp 半導体素子製造装置用部材
JP2001139365A (ja) * 1999-11-10 2001-05-22 Nihon Ceratec Co Ltd 半導体製造装置用セラミックス部品
CN1308284A (zh) * 2000-02-07 2001-08-15 易索网络在线有限公司 通信系统及其服务器、通信方法、记录媒体

Also Published As

Publication number Publication date
US20050106869A1 (en) 2005-05-19
KR20040103948A (ko) 2004-12-09
JP2003264169A (ja) 2003-09-19
AU2003221340A1 (en) 2003-09-22
WO2003077300A1 (en) 2003-09-18
CN1643663A (zh) 2005-07-20

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Granted publication date: 20071212

Termination date: 20140310