SG158164A1 - Apparatus for spatial and temporal control of temperature on a substrate - Google Patents
Apparatus for spatial and temporal control of temperature on a substrateInfo
- Publication number
- SG158164A1 SG158164A1 SG200908533-3A SG2009085333A SG158164A1 SG 158164 A1 SG158164 A1 SG 158164A1 SG 2009085333 A SG2009085333 A SG 2009085333A SG 158164 A1 SG158164 A1 SG 158164A1
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- metal plate
- substrate
- heater
- temperature
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53252—Means to simultaneously fasten three or more parts
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/027,481 US8038796B2 (en) | 2004-12-30 | 2004-12-30 | Apparatus for spatial and temporal control of temperature on a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG158164A1 true SG158164A1 (en) | 2010-01-29 |
Family
ID=36129887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200908533-3A SG158164A1 (en) | 2004-12-30 | 2005-12-13 | Apparatus for spatial and temporal control of temperature on a substrate |
Country Status (7)
Country | Link |
---|---|
US (6) | US8038796B2 (zh) |
JP (1) | JP4881319B2 (zh) |
KR (3) | KR20100034770A (zh) |
CN (1) | CN101095212B (zh) |
SG (1) | SG158164A1 (zh) |
TW (1) | TWI403617B (zh) |
WO (1) | WO2006073947A2 (zh) |
Families Citing this family (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8038796B2 (en) | 2004-12-30 | 2011-10-18 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
US9520276B2 (en) * | 2005-06-22 | 2016-12-13 | Tokyo Electron Limited | Electrode assembly and plasma processing apparatus |
JP2007088411A (ja) * | 2005-06-28 | 2007-04-05 | Hitachi High-Technologies Corp | 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法 |
US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US7501605B2 (en) * | 2006-08-29 | 2009-03-10 | Lam Research Corporation | Method of tuning thermal conductivity of electrostatic chuck support assembly |
US7901509B2 (en) | 2006-09-19 | 2011-03-08 | Momentive Performance Materials Inc. | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US20080066683A1 (en) * | 2006-09-19 | 2008-03-20 | General Electric Company | Assembly with Enhanced Thermal Uniformity and Method For Making Thereof |
JP2008085283A (ja) | 2006-09-26 | 2008-04-10 | Momentive Performance Materials Inc | 熱均一性が強化された加熱装置及びその製造方法 |
TWI508129B (zh) * | 2007-10-31 | 2015-11-11 | Lam Res Corp | 利用氣體壓力來控制液體冷卻劑與構件體間之熱傳導的溫度控制模組 |
KR20090071060A (ko) | 2007-12-27 | 2009-07-01 | 주성엔지니어링(주) | 정전척 및 그를 포함하는 기판처리장치 |
US20100116788A1 (en) * | 2008-11-12 | 2010-05-13 | Lam Research Corporation | Substrate temperature control by using liquid controlled multizone substrate support |
JP5250408B2 (ja) * | 2008-12-24 | 2013-07-31 | 新光電気工業株式会社 | 基板温調固定装置 |
KR101691044B1 (ko) * | 2009-02-04 | 2016-12-29 | 맷슨 테크놀로지, 인크. | 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법 |
JP5507198B2 (ja) * | 2009-10-26 | 2014-05-28 | 新光電気工業株式会社 | 静電チャック |
JP5846186B2 (ja) * | 2010-01-29 | 2016-01-20 | 住友大阪セメント株式会社 | 静電チャック装置および静電チャック装置の製造方法 |
JP5423632B2 (ja) | 2010-01-29 | 2014-02-19 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP5618638B2 (ja) * | 2010-06-07 | 2014-11-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置または試料載置台 |
US8591755B2 (en) * | 2010-09-15 | 2013-11-26 | Lam Research Corporation | Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same |
JP5994772B2 (ja) * | 2011-03-23 | 2016-09-21 | 住友大阪セメント株式会社 | 静電チャック装置 |
AU2015203212C1 (en) * | 2011-08-30 | 2017-07-06 | Watlow Electric Manufacturing Company | System and method for controlling a thermal array |
AU2015203195B2 (en) * | 2011-08-30 | 2017-04-13 | Watlow Electric Manufacturing Company | System and method for controlling a thermal array |
KR101868130B1 (ko) * | 2011-08-30 | 2018-06-18 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | 열 어레이 시스템 |
CN103959900B (zh) * | 2011-09-29 | 2016-08-24 | 沃特洛电气制造公司 | 高动态温度控制系统 |
US9869392B2 (en) | 2011-10-20 | 2018-01-16 | Lam Research Corporation | Edge seal for lower electrode assembly |
US9859142B2 (en) | 2011-10-20 | 2018-01-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
TW201327712A (zh) * | 2011-11-01 | 2013-07-01 | Intevac Inc | 以電漿處理太陽能電池晶圓之系統架構 |
US8844106B2 (en) | 2011-11-10 | 2014-09-30 | Lam Research Corporation | Installation fixture for elastomer bands and methods of using the same |
US10276410B2 (en) * | 2011-11-25 | 2019-04-30 | Nhk Spring Co., Ltd. | Substrate support device |
US9153463B2 (en) | 2011-11-25 | 2015-10-06 | Nhk Spring Co., Ltd. | Substrate support device |
US8677586B2 (en) | 2012-04-04 | 2014-03-25 | Lam Research Corporation | Installation fixture for elastomer bands and methods of using the same |
JP6006972B2 (ja) | 2012-04-26 | 2016-10-12 | 新光電気工業株式会社 | 静電チャック |
US9224626B2 (en) * | 2012-07-03 | 2015-12-29 | Watlow Electric Manufacturing Company | Composite substrate for layered heaters |
US9673077B2 (en) * | 2012-07-03 | 2017-06-06 | Watlow Electric Manufacturing Company | Pedestal construction with low coefficient of thermal expansion top |
CN103839744A (zh) * | 2012-11-20 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | 一种用于晶片加工的装置 |
JP5992388B2 (ja) * | 2012-12-03 | 2016-09-14 | 日本碍子株式会社 | セラミックヒーター |
US9538583B2 (en) | 2013-01-16 | 2017-01-03 | Applied Materials, Inc. | Substrate support with switchable multizone heater |
US10557190B2 (en) * | 2013-01-24 | 2020-02-11 | Tokyo Electron Limited | Substrate processing apparatus and susceptor |
US20140318455A1 (en) * | 2013-04-26 | 2014-10-30 | Varian Semiconductor Equipment Associates, Inc. | Low emissivity electrostatic chuck |
US9666466B2 (en) * | 2013-05-07 | 2017-05-30 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
US9502279B2 (en) | 2013-06-28 | 2016-11-22 | Lam Research Corporation | Installation fixture having a micro-grooved non-stick surface |
US9518946B2 (en) | 2013-12-04 | 2016-12-13 | Watlow Electric Manufacturing Company | Thermographic inspection system |
US9583377B2 (en) | 2013-12-17 | 2017-02-28 | Lam Research Corporation | Installation fixture for elastomer bands |
US10804081B2 (en) | 2013-12-20 | 2020-10-13 | Lam Research Corporation | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber |
US10090211B2 (en) | 2013-12-26 | 2018-10-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
CN104752301B (zh) * | 2013-12-31 | 2018-05-25 | 北京北方华创微电子装备有限公司 | 一种静电卡盘以及腔室 |
CN103726034B (zh) * | 2014-01-22 | 2017-01-25 | 清华大学 | 用于工艺腔室的基台及其控制方法、托盘及其设计方法 |
JP6312451B2 (ja) * | 2014-01-29 | 2018-04-18 | 東京エレクトロン株式会社 | 給電部カバー構造及び半導体製造装置 |
JP6215104B2 (ja) * | 2014-03-20 | 2017-10-18 | 新光電気工業株式会社 | 温度調整装置 |
JP6219227B2 (ja) * | 2014-05-12 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構及びステージの温度制御方法 |
JP6292977B2 (ja) * | 2014-05-22 | 2018-03-14 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
JP6308871B2 (ja) * | 2014-05-28 | 2018-04-11 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
KR20160015510A (ko) * | 2014-07-30 | 2016-02-15 | 삼성전자주식회사 | 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법 |
US9887478B2 (en) * | 2015-04-21 | 2018-02-06 | Varian Semiconductor Equipment Associates, Inc. | Thermally insulating electrical contact probe |
WO2017003646A1 (en) * | 2015-06-29 | 2017-01-05 | Varian Semiconductor Equipment Associates, Inc. | Thermal shield for electrostatic chuck |
JP2017028111A (ja) * | 2015-07-23 | 2017-02-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN105117596A (zh) * | 2015-08-19 | 2015-12-02 | 国网天津市电力公司 | 一种居民电热膜采暖热负荷估算方法 |
US10499461B2 (en) * | 2015-12-21 | 2019-12-03 | Intel Corporation | Thermal head with a thermal barrier for integrated circuit die processing |
JP6531675B2 (ja) * | 2016-02-29 | 2019-06-19 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP6195029B1 (ja) * | 2016-07-20 | 2017-09-13 | Toto株式会社 | 静電チャック |
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US20180096867A1 (en) | 2016-09-30 | 2018-04-05 | Momentive Performance Materials Inc. | Heating apparatus with controlled thermal contact |
US9899193B1 (en) | 2016-11-02 | 2018-02-20 | Varian Semiconductor Equipment Associates, Inc. | RF ion source with dynamic volume control |
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WO2018106952A1 (en) | 2016-12-07 | 2018-06-14 | Tel Fsi, Inc. | Wafer edge lift pin design for manufacturing a semiconductor device |
US10843236B2 (en) | 2017-01-27 | 2020-11-24 | Tel Manufacturing And Engineering Of America, Inc. | Systems and methods for rotating and translating a substrate in a process chamber |
JP6341457B1 (ja) * | 2017-03-29 | 2018-06-13 | Toto株式会社 | 静電チャック |
KR102030068B1 (ko) * | 2017-10-12 | 2019-10-08 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
US10761041B2 (en) | 2017-11-21 | 2020-09-01 | Watlow Electric Manufacturing Company | Multi-parallel sensor array system |
TW201939572A (zh) | 2018-02-19 | 2019-10-01 | 美商東京威力科創Fsi股份有限公司 | 具有可控制噴束尺寸之處理噴霧的微電子處理系統 |
US11515130B2 (en) | 2018-03-05 | 2022-11-29 | Applied Materials, Inc. | Fast response pedestal assembly for selective preclean |
JP2021525454A (ja) * | 2018-05-31 | 2021-09-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 極めて均一性が高い加熱基板支持アセンブリ |
US11545387B2 (en) | 2018-07-13 | 2023-01-03 | Tel Manufacturing And Engineering Of America, Inc. | Magnetic integrated lift pin system for a chemical processing chamber |
US20200035535A1 (en) * | 2018-07-27 | 2020-01-30 | Applied Materials, Inc. | Metal bonded electrostatic chuck for high power application |
JP7169866B2 (ja) * | 2018-12-14 | 2022-11-11 | 東京エレクトロン株式会社 | 基板処理方法 |
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US11373893B2 (en) * | 2019-09-16 | 2022-06-28 | Applied Materials, Inc. | Cryogenic electrostatic chuck |
US11784080B2 (en) * | 2020-03-10 | 2023-10-10 | Applied Materials, Inc. | High temperature micro-zone electrostatic chuck |
KR20220027509A (ko) * | 2020-08-27 | 2022-03-08 | 삼성전자주식회사 | 플라즈마 공정 장치 및 플라즈마 공정 장치에서의 웨이퍼 디척킹 방법 |
JP2022089007A (ja) * | 2020-12-03 | 2022-06-15 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
JP2023031603A (ja) | 2021-08-25 | 2023-03-09 | 新光電気工業株式会社 | 基板固定装置 |
Family Cites Families (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3411122A (en) * | 1966-01-13 | 1968-11-12 | Ibm | Electrical resistance element and method of fabricating |
US3955068A (en) * | 1974-09-27 | 1976-05-04 | Rockwell International Corporation | Flexible conductor-resistor composite |
US4518848A (en) | 1981-05-15 | 1985-05-21 | Gca Corporation | Apparatus for baking resist on semiconductor wafers |
US4455462A (en) * | 1982-01-25 | 1984-06-19 | Delucia Victor E | Arc proof dual interlock safety switch |
US5059770A (en) | 1989-09-19 | 1991-10-22 | Watkins-Johnson Company | Multi-zone planar heater assembly and method of operation |
JPH0478133A (ja) | 1990-07-20 | 1992-03-12 | Tokyo Electron Ltd | プラズマ処理装置 |
US5192849A (en) * | 1990-08-10 | 1993-03-09 | Texas Instruments Incorporated | Multipurpose low-thermal-mass chuck for semiconductor processing equipment |
JP3238925B2 (ja) | 1990-11-17 | 2001-12-17 | 株式会社東芝 | 静電チャック |
DE69130205T2 (de) | 1990-12-25 | 1999-03-25 | Ngk Insulators Ltd | Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben |
US5294778A (en) | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
US5306898A (en) * | 1991-12-28 | 1994-04-26 | Rohm Co., Ltd. | Heater for sheet material |
JPH05275162A (ja) * | 1992-03-26 | 1993-10-22 | Rohm Co Ltd | ライン型加熱体 |
US5413360A (en) | 1992-12-01 | 1995-05-09 | Kyocera Corporation | Electrostatic chuck |
US5625526A (en) | 1993-06-01 | 1997-04-29 | Tokyo Electron Limited | Electrostatic chuck |
JP3208029B2 (ja) | 1994-11-22 | 2001-09-10 | 株式会社巴川製紙所 | 静電チャック装置およびその作製方法 |
JPH08165571A (ja) * | 1994-12-08 | 1996-06-25 | Nissin Electric Co Ltd | 基板保持装置およびその製造方法 |
JPH08264269A (ja) * | 1995-03-28 | 1996-10-11 | Rohm Co Ltd | シート材に対する加熱体 |
US6140612A (en) | 1995-06-07 | 2000-10-31 | Lam Research Corporation | Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck |
US5609720A (en) | 1995-09-29 | 1997-03-11 | Lam Research Corporation | Thermal control of semiconductor wafer during reactive ion etching |
US5854468A (en) | 1996-01-25 | 1998-12-29 | Brooks Automation, Inc. | Substrate heating apparatus with cantilevered lifting arm |
JP3826961B2 (ja) * | 1996-03-25 | 2006-09-27 | ローム株式会社 | 加熱体およびその製造方法 |
US5761023A (en) | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
JP3537269B2 (ja) | 1996-05-21 | 2004-06-14 | アネルバ株式会社 | マルチチャンバースパッタリング装置 |
US6031211A (en) | 1997-07-11 | 2000-02-29 | Concept Systems Design, Inc. | Zone heating system with feedback control |
JPH1064983A (ja) | 1996-08-16 | 1998-03-06 | Sony Corp | ウエハステージ |
US6184063B1 (en) * | 1996-11-26 | 2001-02-06 | Texas Instruments Incorporated | Method and apparatus for breaking and separating a wafer into die using a multi-radii dome |
JP3665826B2 (ja) | 1997-05-29 | 2005-06-29 | Smc株式会社 | 基板熱処理装置 |
US5978202A (en) * | 1997-06-27 | 1999-11-02 | Applied Materials, Inc. | Electrostatic chuck having a thermal transfer regulator pad |
JP3318514B2 (ja) | 1997-08-06 | 2002-08-26 | 日本碍子株式会社 | 半導体支持装置 |
US6084215A (en) | 1997-11-05 | 2000-07-04 | Tokyo Electron Limited | Semiconductor wafer holder with spring-mounted temperature measurement apparatus disposed therein |
US6482747B1 (en) | 1997-12-26 | 2002-11-19 | Hitachi, Ltd. | Plasma treatment method and plasma treatment apparatus |
JP4237317B2 (ja) | 1997-12-26 | 2009-03-11 | 株式会社日立製作所 | プラズマ処理装置 |
JP3477062B2 (ja) | 1997-12-26 | 2003-12-10 | 京セラ株式会社 | ウエハ加熱装置 |
KR100249391B1 (ko) * | 1997-12-30 | 2000-03-15 | 김영환 | 가열장치 |
US6020262A (en) | 1998-03-06 | 2000-02-01 | Siemens Aktiengesellschaft | Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer |
EP0948042A1 (de) * | 1998-03-06 | 1999-10-06 | VenTec Gesellschaft für Venturekapital und Unternehmensberatung | Elektrostatische Vorrichtung zum Halten von Wafern und anderen Bauteilen |
US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
US6072685A (en) | 1998-05-22 | 2000-06-06 | Applied Materials, Inc. | Electrostatic chuck having an electrical connector with housing |
US6259592B1 (en) | 1998-11-19 | 2001-07-10 | Applied Materials, Inc. | Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same |
US6151203A (en) | 1998-12-14 | 2000-11-21 | Applied Materials, Inc. | Connectors for an electrostatic chuck and combination thereof |
EP1193751B1 (en) * | 1999-04-06 | 2006-05-17 | Tokyo Electron Limited | Electrode and method of manufacturing an electrode |
JP2001102436A (ja) | 1999-05-07 | 2001-04-13 | Applied Materials Inc | 静電チャック及びその製造方法 |
US6310755B1 (en) | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
JP2000332089A (ja) | 1999-05-18 | 2000-11-30 | Toshiba Ceramics Co Ltd | ウエハ加熱保持用静電チャック |
US6100506A (en) | 1999-07-26 | 2000-08-08 | International Business Machines Corporation | Hot plate with in situ surface temperature adjustment |
JP2001203257A (ja) | 2000-01-20 | 2001-07-27 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウェハ保持体 |
JP2002057207A (ja) | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置 |
JP5165817B2 (ja) | 2000-03-31 | 2013-03-21 | ラム リサーチ コーポレーション | 静電チャック及びその製造方法 |
JP3817414B2 (ja) | 2000-08-23 | 2006-09-06 | 株式会社日立製作所 | 試料台ユニットおよびプラズマ処理装置 |
JP4578701B2 (ja) | 2001-02-26 | 2010-11-10 | キヤノンアネルバ株式会社 | 基板処理方法 |
JP2002313901A (ja) | 2001-04-12 | 2002-10-25 | Komatsu Ltd | 静電チャック |
US20050211385A1 (en) * | 2001-04-30 | 2005-09-29 | Lam Research Corporation, A Delaware Corporation | Method and apparatus for controlling spatial temperature distribution |
US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US7161121B1 (en) | 2001-04-30 | 2007-01-09 | Lam Research Corporation | Electrostatic chuck having radial temperature control capability |
CN100401852C (zh) | 2001-04-30 | 2008-07-09 | 科林研发公司 | 用于控制工件支架表面上空间温度分布的方法与装置 |
JP2002359281A (ja) | 2001-06-01 | 2002-12-13 | Ngk Spark Plug Co Ltd | セラミックヒータ及びその製造方法 |
JP2003060016A (ja) | 2001-07-31 | 2003-02-28 | Applied Materials Inc | 電流導入端子及び半導体製造装置 |
US6646233B2 (en) | 2002-03-05 | 2003-11-11 | Hitachi High-Technologies Corporation | Wafer stage for wafer processing apparatus and wafer processing method |
TWI228786B (en) | 2002-04-16 | 2005-03-01 | Anelva Corp | Electrostatic chucking stage and substrate processing apparatus |
US6825681B2 (en) * | 2002-07-19 | 2004-11-30 | Delta Design, Inc. | Thermal control of a DUT using a thermal control substrate |
US6770852B1 (en) | 2003-02-27 | 2004-08-03 | Lam Research Corporation | Critical dimension variation compensation across a wafer by means of local wafer temperature control |
JP4515755B2 (ja) * | 2003-12-24 | 2010-08-04 | 東京エレクトロン株式会社 | 処理装置 |
US8038796B2 (en) * | 2004-12-30 | 2011-10-18 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
KR101214520B1 (ko) | 2005-04-26 | 2012-12-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 그 구동방법 |
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2004
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- 2005-12-13 KR KR1020097013821A patent/KR101094122B1/ko active IP Right Grant
- 2005-12-13 KR KR1020077017391A patent/KR20070121637A/ko active Search and Examination
- 2005-12-13 WO PCT/US2005/047109 patent/WO2006073947A2/en active Application Filing
- 2005-12-13 SG SG200908533-3A patent/SG158164A1/en unknown
- 2005-12-13 CN CN200580045528XA patent/CN101095212B/zh active Active
- 2005-12-23 TW TW094146395A patent/TWI403617B/zh active
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- 2008-09-22 US US12/232,673 patent/US8051556B2/en active Active
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Also Published As
Publication number | Publication date |
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KR20070121637A (ko) | 2007-12-27 |
US20130072024A1 (en) | 2013-03-21 |
JP4881319B2 (ja) | 2012-02-22 |
US20060144516A1 (en) | 2006-07-06 |
KR20100034770A (ko) | 2010-04-01 |
US8821639B2 (en) | 2014-09-02 |
US8038796B2 (en) | 2011-10-18 |
US20120018411A1 (en) | 2012-01-26 |
WO2006073947A2 (en) | 2006-07-13 |
US8051556B2 (en) | 2011-11-08 |
US20200251370A1 (en) | 2020-08-06 |
KR101094122B1 (ko) | 2011-12-15 |
US20140332161A1 (en) | 2014-11-13 |
US10636689B2 (en) | 2020-04-28 |
TWI403617B (zh) | 2013-08-01 |
KR20090089449A (ko) | 2009-08-21 |
TW200700583A (en) | 2007-01-01 |
US11302556B2 (en) | 2022-04-12 |
CN101095212B (zh) | 2011-07-06 |
US20090078360A1 (en) | 2009-03-26 |
JP2008527694A (ja) | 2008-07-24 |
US8735298B2 (en) | 2014-05-27 |
WO2006073947A3 (en) | 2007-04-05 |
CN101095212A (zh) | 2007-12-26 |
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