SG155043A1 - Process for etching dielectric films with improved resist and/or etch profile characteristics using etch gas with fluorocarbon and hydrocarbon gas - Google Patents

Process for etching dielectric films with improved resist and/or etch profile characteristics using etch gas with fluorocarbon and hydrocarbon gas

Info

Publication number
SG155043A1
SG155043A1 SG200608675-5A SG2006086755A SG155043A1 SG 155043 A1 SG155043 A1 SG 155043A1 SG 2006086755 A SG2006086755 A SG 2006086755A SG 155043 A1 SG155043 A1 SG 155043A1
Authority
SG
Singapore
Prior art keywords
gas
dielectric layer
etch
fluorocarbon
plasma
Prior art date
Application number
SG200608675-5A
Other languages
English (en)
Inventor
Aaron Eppler
Mukund Srinivasan
Robert Chebi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG155043A1 publication Critical patent/SG155043A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200608675-5A 2002-06-14 2003-06-13 Process for etching dielectric films with improved resist and/or etch profile characteristics using etch gas with fluorocarbon and hydrocarbon gas SG155043A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/170,424 US7547635B2 (en) 2002-06-14 2002-06-14 Process for etching dielectric films with improved resist and/or etch profile characteristics

Publications (1)

Publication Number Publication Date
SG155043A1 true SG155043A1 (en) 2009-09-30

Family

ID=29732492

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200608686-2A SG145568A1 (en) 2002-06-14 2003-06-13 Process for etching dielectric films with improved resist and/or etch profile characteristics using etch gas with fluorocarbon and hydrogen
SG200608675-5A SG155043A1 (en) 2002-06-14 2003-06-13 Process for etching dielectric films with improved resist and/or etch profile characteristics using etch gas with fluorocarbon and hydrocarbon gas

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG200608686-2A SG145568A1 (en) 2002-06-14 2003-06-13 Process for etching dielectric films with improved resist and/or etch profile characteristics using etch gas with fluorocarbon and hydrogen

Country Status (7)

Country Link
US (1) US7547635B2 (zh)
EP (1) EP1518265A2 (zh)
JP (1) JP2005530345A (zh)
CN (2) CN101038875A (zh)
AU (1) AU2003251519A1 (zh)
SG (2) SG145568A1 (zh)
WO (1) WO2003107410A2 (zh)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US7547635B2 (en) 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US7023090B2 (en) * 2003-01-29 2006-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding pad and via structure design
US6942816B2 (en) * 2003-02-12 2005-09-13 Lam Research Corporation Methods of reducing photoresist distortion while etching in a plasma processing system
US20040219790A1 (en) * 2003-04-30 2004-11-04 Wilson Aaron R Etching methods, RIE methods, and methods of increasing the stability of photoresist during RIE
US20050178741A1 (en) * 2003-05-03 2005-08-18 Yeoh Joon C. Method of etching porous dielectric
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
WO2005112092A2 (en) * 2004-05-11 2005-11-24 Applied Materials, Inc. CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY
TW200605220A (en) * 2004-06-21 2006-02-01 Hitachi Chemical Co Ltd Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid
US7279770B2 (en) * 2004-08-26 2007-10-09 Micron Technology, Inc. Isolation techniques for reducing dark current in CMOS image sensors
US20060118519A1 (en) * 2004-12-03 2006-06-08 Applied Materials Inc. Dielectric etch method with high source and low bombardment plasma providing high etch rates
US7442649B2 (en) * 2005-03-29 2008-10-28 Lam Research Corporation Etch with photoresist mask
US7293569B2 (en) * 2005-12-13 2007-11-13 Air Liquide Electronics U.S. Lp Alkylsilanes as solvents for low vapor pressure precursors
US20070243714A1 (en) * 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
US20070249173A1 (en) * 2006-04-21 2007-10-25 Applied Materials, Inc. Plasma etch process using etch uniformity control by using compositionally independent gas feed
US8187415B2 (en) * 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
US7541292B2 (en) * 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
US20070254483A1 (en) * 2006-04-28 2007-11-01 Applied Materials, Inc. Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity
US8231799B2 (en) * 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7431859B2 (en) * 2006-04-28 2008-10-07 Applied Materials, Inc. Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation
US7540971B2 (en) * 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
US7601607B2 (en) * 2006-05-15 2009-10-13 Chartered Semiconductor Manufacturing, Ltd. Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
KR100763514B1 (ko) * 2006-06-30 2007-10-04 삼성전자주식회사 반도체 장치의 개구 형성 방법 및 이를 이용한 반도체 장치제조 방법
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US20080203056A1 (en) * 2007-02-26 2008-08-28 Judy Wang Methods for etching high aspect ratio features
JP5568209B2 (ja) * 2007-03-01 2014-08-06 ピーエスフォー ルクスコ エスエイアールエル 半導体デバイスの製造方法および製造装置
US7718529B2 (en) * 2007-07-17 2010-05-18 Globalfoundries Inc. Inverse self-aligned spacer lithography
JP5440170B2 (ja) * 2007-09-28 2014-03-12 日本ゼオン株式会社 プラズマエッチング方法
US20100330805A1 (en) * 2007-11-02 2010-12-30 Kenny Linh Doan Methods for forming high aspect ratio features on a substrate
GB0724717D0 (en) * 2007-12-19 2008-01-30 Edwards Ltd Method of treating a gas stream
KR101588909B1 (ko) * 2007-12-21 2016-02-12 램 리써치 코포레이션 실리콘 구조의 제조 및 프로파일 제어를 이용한 딥 실리콘 에칭
JP5226296B2 (ja) * 2007-12-27 2013-07-03 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
US20110068086A1 (en) * 2008-03-31 2011-03-24 Zeon Corporation Plasma etching method
JP2011124239A (ja) * 2008-03-31 2011-06-23 Daikin Industries Ltd ドライエッチングガス及びそれを用いたドライエッチング方法
JP5064319B2 (ja) * 2008-07-04 2012-10-31 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体
CN101640174B (zh) * 2008-07-31 2011-08-24 中芯国际集成电路制造(北京)有限公司 半导体结构的刻蚀方法和金属互连层的形成方法
US9018098B2 (en) * 2008-10-23 2015-04-28 Lam Research Corporation Silicon etch with passivation using chemical vapor deposition
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
JP5098969B2 (ja) * 2008-11-21 2012-12-12 株式会社明電舎 エッチング方法及びその装置
US9620410B1 (en) 2009-01-20 2017-04-11 Lam Research Corporation Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process
US7972966B2 (en) * 2009-05-19 2011-07-05 International Business Machines Corporation Etching of tungsten selective to titanium nitride
JP5486883B2 (ja) * 2009-09-08 2014-05-07 東京エレクトロン株式会社 被処理体の処理方法
EP2511948A4 (en) 2010-02-01 2014-07-02 Central Glass Co Ltd DRY ETCHING AGENT AND DRY ETCHING METHOD USING THE SAME
US20110223768A1 (en) * 2010-03-10 2011-09-15 United Microelectronics Corp. Method for Forming Contact Opening
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
JP5434970B2 (ja) * 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US8395228B2 (en) 2010-11-08 2013-03-12 International Business Machines Corporation Integration process to improve focus leveling within a lot process variation
JP2013030531A (ja) * 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
CN103531464B (zh) * 2012-07-03 2017-03-22 中国科学院微电子研究所 氮化硅高深宽比孔的刻蚀方法
US9082719B2 (en) * 2012-10-19 2015-07-14 Infineon Technologies Ag Method for removing a dielectric layer from a bottom of a trench
US8668835B1 (en) 2013-01-23 2014-03-11 Lam Research Corporation Method of etching self-aligned vias and trenches in a multi-layer film stack
US9006106B2 (en) * 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US8906810B2 (en) 2013-05-07 2014-12-09 Lam Research Corporation Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization
JP6396699B2 (ja) * 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
JP6151215B2 (ja) * 2014-05-15 2017-06-21 東京エレクトロン株式会社 プラズマエッチング方法
TWI531007B (zh) * 2014-05-16 2016-04-21 力晶科技股份有限公司 半導體結構與其半導體製程
FR3023970B1 (fr) * 2014-07-18 2016-08-05 Commissariat Energie Atomique Procede de formation d'ouvertures de contact pour un transistor
US9558928B2 (en) * 2014-08-29 2017-01-31 Lam Research Corporation Contact clean in high-aspect ratio structures
KR102333443B1 (ko) 2014-10-24 2021-12-02 삼성전자주식회사 반도체 소자의 제조 방법
US20160314964A1 (en) * 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
JP6327295B2 (ja) * 2015-08-12 2018-05-23 セントラル硝子株式会社 ドライエッチング方法
JP6110530B2 (ja) * 2016-02-10 2017-04-05 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング装置
US9716005B1 (en) 2016-03-18 2017-07-25 Applied Materials, Inc. Plasma poisoning to enable selective deposition
US12051589B2 (en) 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
CN107785310B (zh) * 2016-08-25 2020-04-28 上海和辉光电有限公司 一种柔性基板的剥离方法
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
JP7190814B2 (ja) 2017-02-13 2022-12-16 ラム リサーチ コーポレーション エアギャップの形成方法
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US10276439B2 (en) 2017-06-02 2019-04-30 International Business Machines Corporation Rapid oxide etch for manufacturing through dielectric via structures
US10153209B1 (en) 2018-02-05 2018-12-11 Globalfoundries Inc. Insulating gate separation structure and methods of making same
CN111886689A (zh) 2018-03-19 2020-11-03 朗姆研究公司 无倒角通孔集成方案
JP7110034B2 (ja) * 2018-08-24 2022-08-01 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
KR20230085953A (ko) 2018-10-19 2023-06-14 램 리써치 코포레이션 갭 충진 (gapfill) 을 위한 도핑되거나 도핑되지 않은 실리콘 카바이드 증착 및 원격 수소 플라즈마 노출
WO2020263757A1 (en) 2019-06-27 2020-12-30 Lam Research Corporation Alternating etch and passivation process
CN110544627A (zh) * 2019-09-12 2019-12-06 长江存储科技有限责任公司 高深宽比开口的刻蚀方法及刻蚀气体
US11289375B2 (en) 2020-03-23 2022-03-29 International Business Machines Corporation Fully aligned interconnects with selective area deposition
KR20220166316A (ko) * 2020-04-08 2022-12-16 램 리써치 코포레이션 준금속 (metalloid) 또는 금속 함유 하드마스크의 증착을 사용한 선택적인 에칭
TW202212012A (zh) * 2020-06-15 2022-04-01 美商蘭姆研究公司 在腔室清潔中的錫氧化物的移除

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305268A1 (fr) * 1987-08-18 1989-03-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé de gravure ionique réactive à basse tension d'autopolarisation par addition de gaz inertes
EP0496614A1 (en) * 1991-01-23 1992-07-29 Nec Corporation Method for forming contact hole in process of manufacturing semiconductor device
EP0553961A2 (en) * 1992-01-29 1993-08-04 Applied Materials, Inc. Reactive ion etch process including hydrogen radicals
US5338399A (en) * 1991-02-12 1994-08-16 Sony Corporation Dry etching method
EP0889507A1 (en) * 1997-07-03 1999-01-07 Applied Materials, Inc. Plasma etching process using a flurocarbon and silane
JPH1116887A (ja) * 1997-06-23 1999-01-22 Hitachi Ltd エッチング方法
US5892286A (en) * 1996-06-26 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JPH11111680A (ja) * 1997-09-30 1999-04-23 Yasuhiro Horiike エッチング方法
JP2000340552A (ja) * 1999-04-26 2000-12-08 Internatl Business Mach Corp <Ibm> 酸化物及びフォトレジスト層に対して高度の選択性を有する異方性窒化物エッチング法
US6214744B1 (en) * 1996-12-11 2001-04-10 Nec Corporation Method for manufacturing semiconductor device capable of improving etching rate ratio of insulator to refractory metal
US6217786B1 (en) * 1998-12-31 2001-04-17 Lam Research Corporation Mechanism for bow reduction and critical dimension control in etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry
JP2001110784A (ja) * 1999-10-12 2001-04-20 Hitachi Ltd プラズマ処理装置および処理方法

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283249A (en) * 1979-05-02 1981-08-11 International Business Machines Corporation Reactive ion etching
JPS5775429A (en) 1980-10-28 1982-05-12 Toshiba Corp Manufacture of semiconductor device
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
DE3122641A1 (de) * 1981-06-06 1982-12-23 Herberts Gmbh, 5600 Wuppertal Kathodisch abscheidbares waessriges elektrotauchlack-ueberzugsmittel
US4807016A (en) * 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
JPS63104425A (ja) * 1986-10-09 1988-05-09 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション バイアの形成方法
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
WO1990005994A1 (en) * 1988-11-18 1990-05-31 Kabushiki Kaisha Tokuda Seisakusho Dry-etching method
JPH0362968A (ja) * 1989-07-31 1991-03-19 Fujitsu Ltd 半導体装置の製造方法
US5300460A (en) * 1989-10-03 1994-04-05 Applied Materials, Inc. UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5013400A (en) * 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5013398A (en) * 1990-05-29 1991-05-07 Micron Technology, Inc. Anisotropic etch method for a sandwich structure
US6251792B1 (en) * 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
JP3000717B2 (ja) * 1991-04-26 2000-01-17 ソニー株式会社 ドライエッチング方法
JPH04354331A (ja) * 1991-05-31 1992-12-08 Sony Corp ドライエッチング方法
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US6238588B1 (en) * 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US5423945A (en) * 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
US5716494A (en) * 1992-06-22 1998-02-10 Matsushita Electric Industrial Co., Ltd. Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
US6194325B1 (en) * 1992-09-08 2001-02-27 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
KR100281345B1 (ko) * 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US5609720A (en) * 1995-09-29 1997-03-11 Lam Research Corporation Thermal control of semiconductor wafer during reactive ion etching
EP0777267A1 (en) 1995-11-28 1997-06-04 Applied Materials, Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
JPH10214822A (ja) * 1997-01-30 1998-08-11 Nec Corp プラズマエッチング装置およびエッチング方法
JP3027951B2 (ja) * 1997-03-12 2000-04-04 日本電気株式会社 半導体装置の製造方法
US5846884A (en) * 1997-06-20 1998-12-08 Siemens Aktiengesellschaft Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
US6074959A (en) * 1997-09-19 2000-06-13 Applied Materials, Inc. Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
US6183655B1 (en) * 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US5965035A (en) * 1997-10-23 1999-10-12 Applied Materials, Inc. Self aligned contact etch using difluoromethane and trifluoromethane
US5872061A (en) * 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US6117786A (en) 1998-05-05 2000-09-12 Lam Research Corporation Method for etching silicon dioxide using fluorocarbon gas chemistry
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6277758B1 (en) * 1998-07-23 2001-08-21 Micron Technology, Inc. Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher
US6379872B1 (en) * 1998-08-27 2002-04-30 Micron Technology, Inc. Etching of anti-reflective coatings
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
US6080662A (en) * 1998-11-04 2000-06-27 Vanguard International Semiconductor Corporation Method for forming multi-level contacts using a H-containing fluorocarbon chemistry
US6204192B1 (en) 1999-03-29 2001-03-20 Lsi Logic Corporation Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures
US6191043B1 (en) * 1999-04-20 2001-02-20 Lam Research Corporation Mechanism for etching a silicon layer in a plasma processing chamber to form deep openings
US6391790B1 (en) * 2000-05-22 2002-05-21 Applied Materials, Inc. Method and apparatus for etching photomasks
US7132363B2 (en) * 2001-03-27 2006-11-07 Advanced Micro Devices, Inc. Stabilizing fluorine etching of low-k materials
US6762127B2 (en) * 2001-08-23 2004-07-13 Yves Pierre Boiteux Etch process for dielectric materials comprising oxidized organo silane materials
JP5038567B2 (ja) 2001-09-26 2012-10-03 東京エレクトロン株式会社 エッチング方法
JP2003133287A (ja) 2001-10-30 2003-05-09 Matsushita Electric Ind Co Ltd ドライエッチング方法
US6867145B2 (en) * 2001-12-17 2005-03-15 Hynix Semiconductor Inc. Method for fabricating semiconductor device using photoresist pattern formed with argon fluoride laser
US6897154B2 (en) * 2002-06-14 2005-05-24 Applied Materials Inc Selective etching of low-k dielectrics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US7547635B2 (en) 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US7473377B2 (en) * 2002-06-27 2009-01-06 Tokyo Electron Limited Plasma processing method
WO2004003988A1 (ja) 2002-06-27 2004-01-08 Tokyo Electron Limited プラズマ処理方法
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
US7229930B2 (en) * 2003-01-13 2007-06-12 Applied Materials, Inc. Selective etching of low-k dielectrics
US7294580B2 (en) * 2003-04-09 2007-11-13 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
WO2005112092A2 (en) * 2004-05-11 2005-11-24 Applied Materials, Inc. CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305268A1 (fr) * 1987-08-18 1989-03-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé de gravure ionique réactive à basse tension d'autopolarisation par addition de gaz inertes
EP0496614A1 (en) * 1991-01-23 1992-07-29 Nec Corporation Method for forming contact hole in process of manufacturing semiconductor device
US5338399A (en) * 1991-02-12 1994-08-16 Sony Corporation Dry etching method
EP0553961A2 (en) * 1992-01-29 1993-08-04 Applied Materials, Inc. Reactive ion etch process including hydrogen radicals
US5892286A (en) * 1996-06-26 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US6214744B1 (en) * 1996-12-11 2001-04-10 Nec Corporation Method for manufacturing semiconductor device capable of improving etching rate ratio of insulator to refractory metal
JPH1116887A (ja) * 1997-06-23 1999-01-22 Hitachi Ltd エッチング方法
EP0889507A1 (en) * 1997-07-03 1999-01-07 Applied Materials, Inc. Plasma etching process using a flurocarbon and silane
JPH11111680A (ja) * 1997-09-30 1999-04-23 Yasuhiro Horiike エッチング方法
US6217786B1 (en) * 1998-12-31 2001-04-17 Lam Research Corporation Mechanism for bow reduction and critical dimension control in etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry
JP2000340552A (ja) * 1999-04-26 2000-12-08 Internatl Business Mach Corp <Ibm> 酸化物及びフォトレジスト層に対して高度の選択性を有する異方性窒化物エッチング法
JP2001110784A (ja) * 1999-10-12 2001-04-20 Hitachi Ltd プラズマ処理装置および処理方法

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