SG137686A1 - A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout - Google Patents

A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout

Info

Publication number
SG137686A1
SG137686A1 SG200403810-5A SG2004038105A SG137686A1 SG 137686 A1 SG137686 A1 SG 137686A1 SG 2004038105 A SG2004038105 A SG 2004038105A SG 137686 A1 SG137686 A1 SG 137686A1
Authority
SG
Singapore
Prior art keywords
opc
sigma
program product
pitch
critical
Prior art date
Application number
SG200403810-5A
Other languages
English (en)
Inventor
Duan-Fu Stephen Hsu
Armin Liebchen
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG137686A1 publication Critical patent/SG137686A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG200403810-5A 2003-06-30 2004-06-30 A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout SG137686A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48310203P 2003-06-30 2003-06-30

Publications (1)

Publication Number Publication Date
SG137686A1 true SG137686A1 (en) 2007-12-28

Family

ID=33490761

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200403810-5A SG137686A1 (en) 2003-06-30 2004-06-30 A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout

Country Status (7)

Country Link
US (1) US7355673B2 (fr)
EP (1) EP1500974A3 (fr)
JP (2) JP2005026701A (fr)
KR (2) KR101096143B1 (fr)
CN (1) CN1577099B (fr)
SG (1) SG137686A1 (fr)
TW (1) TWI345074B (fr)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050073671A1 (en) * 2003-10-07 2005-04-07 Intel Corporation Composite optical lithography method for patterning lines of substantially equal width
US20050074698A1 (en) * 2003-10-07 2005-04-07 Intel Corporation Composite optical lithography method for patterning lines of significantly different widths
US20050085085A1 (en) * 2003-10-17 2005-04-21 Yan Borodovsky Composite patterning with trenches
US7142282B2 (en) * 2003-10-17 2006-11-28 Intel Corporation Device including contacts
US20050088633A1 (en) * 2003-10-24 2005-04-28 Intel Corporation Composite optical lithography method for patterning lines of unequal width
WO2005055295A1 (fr) * 2003-12-03 2005-06-16 Nikon Corporation Procede et systeme d'exposition, et procede de production d'un dispositif
US6977715B2 (en) * 2004-05-19 2005-12-20 Nanya Technology Corp. Method for optimizing NILS of exposed lines
KR100653990B1 (ko) * 2004-12-29 2006-12-05 주식회사 하이닉스반도체 포토마스크 데이터베이스 패턴의 불량 검사 방법
KR100636677B1 (ko) 2005-04-04 2006-10-23 주식회사 하이닉스반도체 이방성 및 비대칭 조명을 이용한 노광공정에서의레이아웃체크방법
US7395516B2 (en) 2005-05-20 2008-07-01 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
US7712064B2 (en) 2005-05-20 2010-05-04 Cadence Design Systems, Inc. Manufacturing aware design of integrated circuit layouts
JP4336671B2 (ja) 2005-07-15 2009-09-30 キヤノン株式会社 露光パラメータの決定をコンピュータに実行させるプログラム、露光パラメータを決定する決定方法、露光方法及びデバイス製造方法。
WO2007010621A1 (fr) * 2005-07-22 2007-01-25 Fujitsu Limited Procédé d’élaboration de données de motif de photomasque, photomasque obtenu en utilisant des données de motif de photomasque et procédé de fabrication de dispositif semi-conducteur utilisant ledit photomasque
JP5147167B2 (ja) * 2005-07-29 2013-02-20 キヤノン株式会社 決定方法及びプログラム
US20070046917A1 (en) * 2005-08-31 2007-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method that compensates for reticle induced CDU
US20070092844A1 (en) * 2005-10-21 2007-04-26 Macronix International Co., Ltd. Method to form photo patterns
KR100673014B1 (ko) 2005-10-28 2007-01-24 삼성전자주식회사 포토 마스크의 제조 방법
EP1873663A1 (fr) 2006-06-27 2008-01-02 Takumi Technology Corporation Procédé d'optimisation du tracé physique du circuit intégré
JP5224687B2 (ja) * 2006-12-22 2013-07-03 キヤノン株式会社 露光条件算出プログラム及び露光条件算出方法
KR100800685B1 (ko) * 2006-12-28 2008-02-01 동부일렉트로닉스 주식회사 모델 기반 opc를 통한 시그마 매칭 방법
JP4997006B2 (ja) * 2007-07-18 2012-08-08 ルネサスエレクトロニクス株式会社 反射型露光方法
KR100864934B1 (ko) * 2007-08-20 2008-10-22 주식회사 동부하이텍 마스크 레이아웃 보정 방법 및 마스크 레이아웃 보정 장치
NL1036335A1 (nl) * 2007-12-27 2009-06-30 Asml Netherlands Bv Device manufacturing method, lithographic system, lithographic apparatus and design for manufacturing system.
JP5909219B2 (ja) * 2008-06-06 2016-04-26 株式会社東芝 マスクパターンデータ作成方法、マスクパターンデータ作成プログラム、マスク、半導体装置の製造方法
JP4843649B2 (ja) * 2008-08-07 2011-12-21 株式会社東芝 評価パターン作成方法、評価パターン作成プログラムおよびパターン検証方法
US8103979B2 (en) * 2008-10-20 2012-01-24 Advanced Micro Devices, Inc. System for generating and optimizing mask assist features based on hybrid (model and rules) methodology
CN102224459B (zh) 2008-11-21 2013-06-19 Asml荷兰有限公司 用于优化光刻过程的方法及设备
NL2003699A (en) 2008-12-18 2010-06-21 Brion Tech Inc Method and system for lithography process-window-maximixing optical proximity correction.
JP5607348B2 (ja) * 2009-01-19 2014-10-15 キヤノン株式会社 原版データを生成する方法およびプログラム、ならびに、原版製作方法
JP4838866B2 (ja) * 2009-02-10 2011-12-14 キヤノン株式会社 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。
CN101893820B (zh) * 2009-05-22 2012-06-27 中芯国际集成电路制造(北京)有限公司 光学邻近修正的方法
US8321818B2 (en) * 2009-06-26 2012-11-27 International Business Machines Corporation Model-based retargeting of layout patterns for sub-wavelength photolithography
US8146026B2 (en) 2009-11-17 2012-03-27 International Business Machines Corporation Simultaneous photolithographic mask and target optimization
US8230372B2 (en) * 2009-12-03 2012-07-24 International Business Machines Corporation Retargeting for electrical yield enhancement
US8331646B2 (en) 2009-12-23 2012-12-11 International Business Machines Corporation Optical proximity correction for transistors using harmonic mean of gate length
NL2005804A (en) * 2010-01-14 2011-07-18 Asml Netherlands Bv Method and apparatus for enhancing signal strength for improved generation and placement of model-based sub-resolution assist features (mb-sraf).
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
NL2007642A (en) * 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization flows of source, mask and projection optics.
JP5673947B2 (ja) * 2011-03-01 2015-02-18 大日本印刷株式会社 マスクパターンの補正方法、プログラム及び該補正方法を用いたフォトマスク
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
CN102289156B (zh) * 2011-08-14 2013-06-05 北京理工大学 一种光刻机NA-Sigma配置的优化方法
CN102253607B (zh) * 2011-08-15 2012-10-10 北京理工大学 一种光刻机照明系统相干因子的优化方法
EP2570854B1 (fr) 2011-09-16 2016-11-30 Imec Définition de la forme d'une source d'éclairage en lithographie optique
JP6003068B2 (ja) * 2012-01-30 2016-10-05 富士通セミコンダクター株式会社 露光方法
JP5869942B2 (ja) * 2012-04-03 2016-02-24 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ マスクのデザイン方法、プログラムおよびマスクデザインシステム
WO2014192518A1 (fr) 2013-05-27 2014-12-04 インターナショナル・ビジネス・マシーンズ・コーポレーション Source de lumière d'exposition, procédé et programme de conception de masque
JP6418786B2 (ja) * 2013-07-10 2018-11-07 キヤノン株式会社 パターンの作成方法、プログラムおよび情報処理装置
US9026956B1 (en) 2013-10-11 2015-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of lithographic process evaluation
CN104635417B (zh) * 2013-11-14 2018-06-01 中芯国际集成电路制造(上海)有限公司 偏差修正方法
JP7081490B2 (ja) * 2016-09-27 2022-06-07 株式会社ニコン レイアウト情報提供方法、レイアウト情報、決定方法、プログラム、並びに情報記録媒体
CN107103145B (zh) * 2017-05-08 2020-11-20 上海华力微电子有限公司 计算版图中线宽固定节距不同的线条的分布的方法
KR20210028798A (ko) 2019-09-04 2021-03-15 삼성전자주식회사 반도체 장치의 제조 방법
CN113031388A (zh) * 2021-02-26 2021-06-25 广东省大湾区集成电路与系统应用研究院 光学邻近效应修正中散射条的嵌入方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US524270A (en) * 1894-08-07 Adjustable portable scaffold
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
DE59105735D1 (de) * 1990-05-02 1995-07-20 Fraunhofer Ges Forschung Belichtungsvorrichtung.
US5229255A (en) * 1991-03-22 1993-07-20 At&T Bell Laboratories Sub-micron device fabrication with a phase shift mask having multiple values of phase delay
JP3179520B2 (ja) * 1991-07-11 2001-06-25 株式会社日立製作所 半導体装置の製造方法
US5324600A (en) * 1991-07-12 1994-06-28 Oki Electric Industry Co., Ltd. Method of forming resist pattern and photomask therefor
US5242770A (en) 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5288569A (en) * 1992-04-23 1994-02-22 International Business Machines Corporation Feature biassing and absorptive phase-shifting techniques to improve optical projection imaging
JP3203394B2 (ja) 1992-06-19 2001-08-27 日本電信電話株式会社 投影光学系の設計方法
US5256505A (en) * 1992-08-21 1993-10-26 Microunity Systems Engineering Lithographical mask for controlling the dimensions of resist patterns
US5538815A (en) * 1992-09-14 1996-07-23 Kabushiki Kaisha Toshiba Method for designing phase-shifting masks with automatization capability
JPH06120114A (ja) 1992-10-06 1994-04-28 Hitachi Ltd 投影露光方法および装置
JPH06163350A (ja) 1992-11-19 1994-06-10 Matsushita Electron Corp 投影露光方法および装置
JPH06181166A (ja) 1992-12-14 1994-06-28 Nikon Corp 投影露光装置
US5362584A (en) * 1993-04-02 1994-11-08 International Business Machines Corporation Phase-shifting transparent lithographic mask for writing contiguous structures from noncontiguous mask areas
JP3283624B2 (ja) 1993-04-12 2002-05-20 株式会社日立製作所 ホトマスク
JPH07134395A (ja) * 1993-04-22 1995-05-23 Samsung Electron Co Ltd マスクパターン及びこれを使用した微細パターンの形成方法
JPH07134390A (ja) 1993-06-14 1995-05-23 Sony Corp 露光装置の設計方法及び露光用マスクの設計方法
US5424154A (en) * 1993-12-10 1995-06-13 Intel Corporation Lithographic emhancement method and apparatus for randomly spaced structures
US5447810A (en) * 1994-02-09 1995-09-05 Microunity Systems Engineering, Inc. Masks for improved lithographic patterning for off-axis illumination lithography
US5663893A (en) * 1995-05-03 1997-09-02 Microunity Systems Engineering, Inc. Method for generating proximity correction features for a lithographic mask pattern
KR0161437B1 (ko) 1995-09-19 1999-02-01 김광호 반도체장치의 미세패턴 형성방법
JP2917879B2 (ja) * 1995-10-31 1999-07-12 日本電気株式会社 フォトマスク及びその製造方法
US5723233A (en) * 1996-02-27 1998-03-03 Lsi Logic Corporation Optical proximity correction method and apparatus
EP0824722B1 (fr) * 1996-03-06 2001-07-25 Asm Lithography B.V. Systeme d'interferometre differentiel et dispositif lithographique a balayage par etapes pourvu d'un tel systeme
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof
WO1998028665A1 (fr) * 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Dispositif de positionnement bidimensionnellement equilibre a deux porte-objets, et dispositif lithographique comportant ledit dispositif
US5821014A (en) 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
DE69829614T2 (de) 1997-03-10 2006-03-09 Asml Netherlands B.V. Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern
US6114071A (en) * 1997-11-24 2000-09-05 Asml Masktools Netherlands B.V. Method of fine feature edge tuning with optically-halftoned mask
JP4352498B2 (ja) * 1999-03-26 2009-10-28 ソニー株式会社 パターン露光方法とこれに用いる処理装置
TWI232356B (en) 2000-09-04 2005-05-11 Asml Netherlands Bv Lithographic projection apparatus, device manufacturing method and device manufactured thereby
GB2367907A (en) * 2000-10-13 2002-04-17 Mitel Semiconductor Ltd Optical proximity correction
TWI285295B (en) * 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6519760B2 (en) 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
US6792591B2 (en) * 2001-02-28 2004-09-14 Asml Masktools B.V. Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
US6553562B2 (en) 2001-05-04 2003-04-22 Asml Masktools B.V. Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques
US7107573B2 (en) * 2002-04-23 2006-09-12 Canon Kabushiki Kaisha Method for setting mask pattern and illumination condition

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXTENDING AGGRESSIVE LOW KI DESIGN RULE REQUIREMENTS FOR 90NM AND 65NM NODES VIA SIMULTANEOUS OPTIMIZATION OF NA, ILLUM *
LITHOCRUISER *
REDUCE OR ELIMINATE LINE-END SHORTENING AND ISO/DENSE BIAS BY TUNING NA, SIGMA *

Also Published As

Publication number Publication date
TWI345074B (en) 2011-07-11
KR20050002650A (ko) 2005-01-07
KR101185463B1 (ko) 2012-10-02
KR20110133520A (ko) 2011-12-13
KR101096143B1 (ko) 2011-12-19
US20050028129A1 (en) 2005-02-03
JP2010146024A (ja) 2010-07-01
EP1500974A2 (fr) 2005-01-26
CN1577099A (zh) 2005-02-09
TW200525178A (en) 2005-08-01
JP2005026701A (ja) 2005-01-27
EP1500974A3 (fr) 2006-04-12
CN1577099B (zh) 2010-05-05
US7355673B2 (en) 2008-04-08

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