SG114529A1 - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
SG114529A1
SG114529A1 SG200200835A SG200200835A SG114529A1 SG 114529 A1 SG114529 A1 SG 114529A1 SG 200200835 A SG200200835 A SG 200200835A SG 200200835 A SG200200835 A SG 200200835A SG 114529 A1 SG114529 A1 SG 114529A1
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
SG200200835A
Other languages
English (en)
Inventor
Yamazaki Shunpei
Mitsuki Toru
Takano Tamae
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG114529A1 publication Critical patent/SG114529A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
SG200200835A 2001-02-23 2002-02-18 Method of manufacturing a semiconductor device SG114529A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001049468 2001-02-23

Publications (1)

Publication Number Publication Date
SG114529A1 true SG114529A1 (en) 2005-09-28

Family

ID=18910569

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200200835A SG114529A1 (en) 2001-02-23 2002-02-18 Method of manufacturing a semiconductor device

Country Status (7)

Country Link
US (3) US6872638B2 (de)
EP (1) EP1235259A3 (de)
KR (1) KR100871449B1 (de)
CN (2) CN1307695C (de)
MY (1) MY135105A (de)
SG (1) SG114529A1 (de)
TW (1) TW529092B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770518B2 (en) * 2001-01-29 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
SG114529A1 (en) * 2001-02-23 2005-09-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
SG143975A1 (en) * 2001-02-28 2008-07-29 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
JP2004146559A (ja) * 2002-10-24 2004-05-20 Elpida Memory Inc 容量素子の製造方法
JP3904512B2 (ja) * 2002-12-24 2007-04-11 シャープ株式会社 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器
JP2004335839A (ja) * 2003-05-09 2004-11-25 Nec Corp 半導体薄膜、薄膜トランジスタ、それらの製造方法および半導体薄膜の製造装置
KR100539962B1 (ko) * 2003-07-03 2005-12-28 매그나칩 반도체 유한회사 포토레지스트 트리밍 공정을 이용한 반도체 소자의 제조방법
US7459379B2 (en) * 2004-03-26 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7071042B1 (en) * 2005-03-03 2006-07-04 Sharp Laboratories Of America, Inc. Method of fabricating silicon integrated circuit on glass
KR20130010624A (ko) * 2011-07-19 2013-01-29 삼성디스플레이 주식회사 도너 기판, 도너 기판의 제조 방법 및 도너 기판을 이용한 유기 발광 표시 장치의 제조 방법
JP5955658B2 (ja) 2012-06-15 2016-07-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
KR101936619B1 (ko) * 2012-10-31 2019-01-09 엘지디스플레이 주식회사 플렉서블 유기전계발광소자 및 그 제조방법
JP5753324B2 (ja) * 2012-11-20 2015-07-22 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法
JP2015049972A (ja) * 2013-08-30 2015-03-16 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
CN103879954B (zh) * 2014-03-20 2017-04-12 浙江工业大学 一种硅基上非晶硅与玻璃的阳极键合方法及其应用
CN107799407B (zh) * 2016-08-29 2020-07-17 中国科学院苏州纳米技术与纳米仿生研究所 一种晶体管的凹槽栅制备方法及大功率射频器件
CN113206006A (zh) * 2021-04-21 2021-08-03 武汉大学 二维材料拉应变工程的激光冲击制备方法

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Also Published As

Publication number Publication date
CN1372308A (zh) 2002-10-02
TW529092B (en) 2003-04-21
US6872638B2 (en) 2005-03-29
CN100592481C (zh) 2010-02-24
CN1307695C (zh) 2007-03-28
KR100871449B1 (ko) 2008-12-03
US20020127827A1 (en) 2002-09-12
KR20020069175A (ko) 2002-08-29
EP1235259A3 (de) 2009-07-29
US20120171795A1 (en) 2012-07-05
EP1235259A2 (de) 2002-08-28
US20050158930A1 (en) 2005-07-21
MY135105A (en) 2008-02-29
CN101005039A (zh) 2007-07-25

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