SG11201811618RA - Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device - Google Patents
Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201811618RA SG11201811618RA SG11201811618RA SG11201811618RA SG11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA
- Authority
- SG
- Singapore
- Prior art keywords
- pellicle
- light exposure
- film
- semiconductor device
- frame
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 4
- 239000002041 carbon nanotube Substances 0.000 abstract 4
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/159—Carbon nanotubes single-walled
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/30—Purity
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/36—Diameter
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016133062 | 2016-07-05 | ||
| PCT/JP2017/024335 WO2018008594A1 (ja) | 2016-07-05 | 2017-07-03 | ペリクル膜、ペリクル枠体、ペリクル、その製造方法、露光原版、露光装置、半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201811618RA true SG11201811618RA (en) | 2019-01-30 |
Family
ID=60912915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201811618RA SG11201811618RA (en) | 2016-07-05 | 2017-07-03 | Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11042085B2 (zh) |
| EP (1) | EP3483655A4 (zh) |
| JP (1) | JP6781864B2 (zh) |
| KR (3) | KR20190003752A (zh) |
| CN (4) | CN116594258A (zh) |
| SG (1) | SG11201811618RA (zh) |
| TW (3) | TW202204252A (zh) |
| WO (1) | WO2018008594A1 (zh) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3483655A4 (en) | 2016-07-05 | 2020-02-26 | Mitsui Chemicals, Inc. | FILM FILM, FILM FRAME, FILM, PRODUCTION METHOD THEREOF, ORIGINAL PLATE FOR LIGHT EXPOSURE, LIGHT EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| EP3404487B1 (en) * | 2017-05-15 | 2021-12-01 | IMEC vzw | Method for forming a carbon nanotube pellicle membrane |
| JP7019472B2 (ja) * | 2018-03-22 | 2022-02-15 | 三井化学株式会社 | カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法 |
| JP7255586B2 (ja) * | 2018-03-29 | 2023-04-11 | 日本ゼオン株式会社 | 炭素膜の製造方法 |
| JP7350776B2 (ja) | 2018-05-04 | 2023-09-26 | エーエスエムエル ネザーランズ ビー．ブイ． | Ｅｕｖリソグラフィのためのペリクル |
| EP3809202A4 (en) * | 2018-06-12 | 2022-03-16 | Mitsui Chemicals, Inc. | FILM SUPPORT FRAME, FILM FILM, METHOD FOR MAKING FILM SUPPORT FRAME, AND ORIGINAL EXPOSURE PLATE AND EXPOSURE DEVICE USING FILM |
| US10871721B2 (en) * | 2018-09-28 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask blank for lithography and method of manufacturing the same |
| JP7040427B2 (ja) * | 2018-12-03 | 2022-03-23 | 信越化学工業株式会社 | ペリクル、ペリクル付露光原版、露光方法及び半導体の製造方法 |
| EP3674797B1 (en) | 2018-12-28 | 2021-05-05 | IMEC vzw | An euvl scanner |
| JP2020160345A (ja) * | 2019-03-27 | 2020-10-01 | 三井化学株式会社 | ペリクル自立膜の製造方法、ペリクルの製造方法、および半導体装置の製造方法 |
| TWI740799B (zh) * | 2019-04-16 | 2021-09-21 | 日商信越化學工業股份有限公司 | 附有黏著劑層的防塵薄膜框架、防塵薄膜組件、附有防塵薄膜組件的曝光原版、曝光方法、半導體裝置的製造方法、及液晶顯示板的製造方法 |
| WO2020243112A1 (en) * | 2019-05-31 | 2020-12-03 | Lintec Of America, Inc. | Films of multiwall, few wall, and single wall carbon nanotube mixtures |
| EP3764163B1 (en) * | 2019-07-11 | 2023-04-12 | IMEC vzw | An extreme ultraviolet lithography device |
| KR102242356B1 (ko) * | 2019-08-05 | 2021-04-20 | 주식회사 에프에스티 | 일체화된 프레임과 멤브레인을 포함하는 펠리클, 그 제조방법, 펠리클을 포함하는 노광장치 및 펠리클의 제조장치 |
| KR102242341B1 (ko) * | 2019-08-05 | 2021-04-20 | 주식회사 에프에스티 | 펠리클 프레임의 제조방법 및 펠리클의 제조장치 |
| WO2021080294A1 (ko) * | 2019-10-22 | 2021-04-29 | 주식회사 에스앤에스텍 | 질화붕소 나노튜브를 사용하는 극자외선 리소그래피용 펠리클 및 이의 제조방법 |
| KR102273266B1 (ko) * | 2019-10-23 | 2021-07-06 | 주식회사 에프에스티 | 일체화된 프레임과 멤브레인을 포함하는 펠리클의 제조방법 |
| KR102704605B1 (ko) * | 2019-11-04 | 2024-09-10 | 주식회사 와인 | 펠리클 프레임 코팅방법, 및 이에 의하여 얻어지는 펠리클 |
| JP7434810B2 (ja) | 2019-11-05 | 2024-02-21 | Ｔｏｐｐａｎホールディングス株式会社 | ペリクル膜及びペリクル |
| EP3842861A1 (en) * | 2019-12-23 | 2021-06-30 | Imec VZW | A method for forming an euvl pellicle |
| WO2021172104A1 (ja) * | 2020-02-26 | 2021-09-02 | 三井化学株式会社 | ペリクル膜、ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法 |
| JP2021135403A (ja) | 2020-02-27 | 2021-09-13 | 凸版印刷株式会社 | ペリクル膜、ペリクル、膜、グラフェンシート及びその製造方法 |
| US11443916B2 (en) * | 2020-04-15 | 2022-09-13 | Kla Corporation | Thin pellicle material for protection of solid-state electron detectors |
| CN117270313A (zh) * | 2020-04-17 | 2023-12-22 | 三井化学株式会社 | 曝光用防护膜、防护膜组件、曝光原版、曝光装置及曝光用防护膜的制造方法 |
| KR102229118B1 (ko) * | 2020-07-08 | 2021-03-18 | 솔브레인 주식회사 | 펠리클 보호 박막 형성용 성장 억제제, 이를 이용한 펠리클 보호 박막 형성 방법 및 이로부터 제조된 마스크 |
| KR102482649B1 (ko) * | 2020-07-09 | 2022-12-29 | (주)에프에스티 | 극자외선 리소그라피용 펠리클의 제조방법 |
| KR102405669B1 (ko) * | 2020-07-16 | 2022-06-07 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
| KR102514088B1 (ko) * | 2020-08-04 | 2023-03-27 | 주식회사 에스앤에스텍 | 1차원 나노물질을 사용하는 극자외선 리소그래피용 펠리클 및 이의 제조방법 |
| US12078923B2 (en) | 2020-08-05 | 2024-09-03 | Mitsui Chemicals, Inc. | Pellicle, exposure original plate, exposure apparatus, method of manufacturing pellicle, and method of manufacturing semiconductor device |
| KR20230014781A (ko) * | 2020-08-06 | 2023-01-30 | 미쯔이가가꾸가부시끼가이샤 | 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법 |
| JP7392184B2 (ja) * | 2020-09-16 | 2023-12-05 | リンテック オブ アメリカ インク | ナノ構造フィルム、ペリクル、及びｅｕｖリソグラフィを行う方法 |
| KR102585401B1 (ko) * | 2020-11-17 | 2023-10-10 | 주식회사 에스앤에스텍 | 독립된 박막 형태의 캡핑층을 갖는 극자외선 리소그래피용 펠리클 및 그 제조방법 |
| US20220244634A1 (en) * | 2021-01-29 | 2022-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Network type pellicle membrane and method for forming the same |
| KR102482650B1 (ko) * | 2021-02-25 | 2022-12-29 | (주)에프에스티 | 질화 붕소 나노 구조 층을 포함하는 극자외선 리소그라피용 펠리클 막 및 그 제조방법 |
| JPWO2022210731A1 (zh) | 2021-03-31 | 2022-10-06 | ||
| JP2022174871A (ja) | 2021-05-12 | 2022-11-25 | 日本電気株式会社 | ボロメータおよびその製造方法 |
| US20220365420A1 (en) * | 2021-05-12 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer pellicle membrane |
| JP2022174894A (ja) * | 2021-05-12 | 2022-11-25 | 日本電気株式会社 | ボロメータ及びその製造方法 |
| JP2022191120A (ja) * | 2021-06-15 | 2022-12-27 | 信越化学工業株式会社 | 気圧調整が容易な露光用ペリクル |
| KR20230012708A (ko) | 2021-07-16 | 2023-01-26 | 인투워드 주식회사 | Euv용 펠리클 및 그 제조 방법 |
| KR20240036598A (ko) * | 2021-07-30 | 2024-03-20 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 펠리클막, 펠리클, 펠리클 부착 노광 원판, 노광 방법, 반도체의 제조 방법 및 액정 표시판의 제조 방법 |
| US11860534B2 (en) * | 2021-08-06 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for an EUV lithography mask and a method of manufacturing thereof |
| JP7448730B2 (ja) * | 2021-08-26 | 2024-03-12 | 三井化学株式会社 | ペリクル膜、ペリクル、露光原版、露光装置、及びペリクル膜の製造方法 |
| KR102715191B1 (ko) * | 2021-11-25 | 2024-10-11 | 한국전자기술연구원 | 금속 탄화물 나노와이어를 이용한 극자외선 노광용 펠리클 |
| EP4202546B1 (en) * | 2021-12-22 | 2024-08-28 | Imec VZW | An euv pellicle |
| WO2024143467A1 (ja) * | 2022-12-27 | 2024-07-04 | 三井化学株式会社 | ペリクル膜、ペリクル、露光原版、及び露光装置 |
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-
2017
- 2017-07-03 EP EP17824197.2A patent/EP3483655A4/en active Pending
- 2017-07-03 JP JP2018526366A patent/JP6781864B2/ja active Active
- 2017-07-03 KR KR1020187035244A patent/KR20190003752A/ko active Application Filing
- 2017-07-03 CN CN202310652861.7A patent/CN116594258A/zh active Pending
- 2017-07-03 CN CN202310652312.XA patent/CN116594257A/zh active Pending
- 2017-07-03 SG SG11201811618RA patent/SG11201811618RA/en unknown
- 2017-07-03 KR KR1020227041813A patent/KR20220165812A/ko not_active Application Discontinuation
- 2017-07-03 WO PCT/JP2017/024335 patent/WO2018008594A1/ja unknown
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- 2017-07-03 KR KR1020227041816A patent/KR20220162888A/ko not_active Application Discontinuation
- 2017-07-03 CN CN202310651908.8A patent/CN116609996A/zh active Pending
- 2017-07-04 TW TW110136705A patent/TW202204252A/zh unknown
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| TW202321146A (zh) | 2023-06-01 |
| US20190129300A1 (en) | 2019-05-02 |
| CN109416503A (zh) | 2019-03-01 |
| JPWO2018008594A1 (ja) | 2019-04-11 |
| CN116594258A (zh) | 2023-08-15 |
| TW202204252A (zh) | 2022-02-01 |
| EP3483655A4 (en) | 2020-02-26 |
| EP3483655A1 (en) | 2019-05-15 |
| TWI744348B (zh) | 2021-11-01 |
| CN116594257A (zh) | 2023-08-15 |
| KR20220165812A (ko) | 2022-12-15 |
| CN109416503B (zh) | 2023-06-09 |
| WO2018008594A1 (ja) | 2018-01-11 |
| US11042085B2 (en) | 2021-06-22 |
| JP6781864B2 (ja) | 2020-11-11 |
| KR20190003752A (ko) | 2019-01-09 |
| CN116609996A (zh) | 2023-08-18 |
| KR20220162888A (ko) | 2022-12-08 |
| TW201821359A (zh) | 2018-06-16 |
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