SG11201811618RA - Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device - Google Patents
Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201811618RA SG11201811618RA SG11201811618RA SG11201811618RA SG11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA
- Authority
- SG
- Singapore
- Prior art keywords
- pellicle
- light exposure
- film
- semiconductor device
- frame
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 4
- 239000002041 carbon nanotube Substances 0.000 abstract 4
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/159—Carbon nanotubes single-walled
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/30—Purity
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/36—Diameter
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016133062 | 2016-07-05 | ||
| PCT/JP2017/024335 WO2018008594A1 (ja) | 2016-07-05 | 2017-07-03 | ペリクル膜、ペリクル枠体、ペリクル、その製造方法、露光原版、露光装置、半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201811618RA true SG11201811618RA (en) | 2019-01-30 |
Family
ID=60912915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201811618RA SG11201811618RA (en) | 2016-07-05 | 2017-07-03 | Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11042085B2 (zh) |
| EP (1) | EP3483655A4 (zh) |
| JP (1) | JP6781864B2 (zh) |
| KR (3) | KR20190003752A (zh) |
| CN (4) | CN116594258A (zh) |
| SG (1) | SG11201811618RA (zh) |
| TW (3) | TW202204252A (zh) |
| WO (1) | WO2018008594A1 (zh) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116594258A (zh) | 2016-07-05 | 2023-08-15 | 三井化学株式会社 | 防护膜及其组件和组件框体、组件制造方法、曝光原版、曝光装置、半导体装置的制造方法 |
| EP3404487B1 (en) * | 2017-05-15 | 2021-12-01 | IMEC vzw | Method for forming a carbon nanotube pellicle membrane |
| JP7019472B2 (ja) * | 2018-03-22 | 2022-02-15 | 三井化学株式会社 | カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法 |
| WO2019188978A1 (ja) * | 2018-03-29 | 2019-10-03 | 日本ゼオン株式会社 | 炭素膜の製造方法 |
| CA3099013A1 (en) | 2018-05-04 | 2019-11-07 | Asml Netherlands B.V. | Pellicle for euv lithography |
| TWI787522B (zh) | 2018-06-12 | 2022-12-21 | 日商三井化學股份有限公司 | 防護薄膜用支撐框架、防護薄膜及防護薄膜用支撐框架的製造方法以及使用了防護薄膜的曝光原版及曝光裝置 |
| US10871721B2 (en) * | 2018-09-28 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask blank for lithography and method of manufacturing the same |
| JP7040427B2 (ja) * | 2018-12-03 | 2022-03-23 | 信越化学工業株式会社 | ペリクル、ペリクル付露光原版、露光方法及び半導体の製造方法 |
| EP3674797B1 (en) | 2018-12-28 | 2021-05-05 | IMEC vzw | An euvl scanner |
| JP2020160345A (ja) * | 2019-03-27 | 2020-10-01 | 三井化学株式会社 | ペリクル自立膜の製造方法、ペリクルの製造方法、および半導体装置の製造方法 |
| KR20220005014A (ko) * | 2019-04-16 | 2022-01-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 펠리클용 점착제, 펠리클, 펠리클 부착 노광 원판, 반도체 장치의 제조 방법, 액정 표시판의 제조 방법, 노광 원판의 재생 방법 및 박리 잔사 저감 방법 |
| EP3764163B1 (en) * | 2019-07-11 | 2023-04-12 | IMEC vzw | An extreme ultraviolet lithography device |
| KR102242341B1 (ko) * | 2019-08-05 | 2021-04-20 | 주식회사 에프에스티 | 펠리클 프레임의 제조방법 및 펠리클의 제조장치 |
| KR102242356B1 (ko) * | 2019-08-05 | 2021-04-20 | 주식회사 에프에스티 | 일체화된 프레임과 멤브레인을 포함하는 펠리클, 그 제조방법, 펠리클을 포함하는 노광장치 및 펠리클의 제조장치 |
| KR102463517B1 (ko) * | 2019-10-22 | 2022-11-09 | 주식회사 에스앤에스텍 | 질화붕소 나노튜브를 사용하는 극자외선 리소그래피용 펠리클 및 이의 제조방법 |
| KR102273266B1 (ko) * | 2019-10-23 | 2021-07-06 | 주식회사 에프에스티 | 일체화된 프레임과 멤브레인을 포함하는 펠리클의 제조방법 |
| JP7434810B2 (ja) | 2019-11-05 | 2024-02-21 | Ｔｏｐｐａｎホールディングス株式会社 | ペリクル膜及びペリクル |
| EP3842861A1 (en) * | 2019-12-23 | 2021-06-30 | Imec VZW | A method for forming an euvl pellicle |
| EP4083705A4 (en) * | 2020-02-26 | 2024-01-17 | Mitsui Chemicals Inc | PELLICLE FILM, PELLICLE, ORIGINAL PLATE FOR EXPOSURE, EXPOSURE DEVICE, METHOD FOR PRODUCING PELLICLES AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
| JP2021135403A (ja) | 2020-02-27 | 2021-09-13 | 凸版印刷株式会社 | ペリクル膜、ペリクル、膜、グラフェンシート及びその製造方法 |
| US11443916B2 (en) * | 2020-04-15 | 2022-09-13 | Kla Corporation | Thin pellicle material for protection of solid-state electron detectors |
| CN115398334B (zh) * | 2020-04-17 | 2023-09-26 | 三井化学株式会社 | 曝光用防护膜、防护膜组件、曝光原版、曝光装置及曝光用防护膜的制造方法 |
| KR102229118B1 (ko) * | 2020-07-08 | 2021-03-18 | 솔브레인 주식회사 | 펠리클 보호 박막 형성용 성장 억제제, 이를 이용한 펠리클 보호 박막 형성 방법 및 이로부터 제조된 마스크 |
| KR102482649B1 (ko) * | 2020-07-09 | 2022-12-29 | (주)에프에스티 | 극자외선 리소그라피용 펠리클의 제조방법 |
| KR102405669B1 (ko) * | 2020-07-16 | 2022-06-07 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
| KR102514088B1 (ko) * | 2020-08-04 | 2023-03-27 | 주식회사 에스앤에스텍 | 1차원 나노물질을 사용하는 극자외선 리소그래피용 펠리클 및 이의 제조방법 |
| KR102585401B1 (ko) * | 2020-11-17 | 2023-10-10 | 주식회사 에스앤에스텍 | 독립된 박막 형태의 캡핑층을 갖는 극자외선 리소그래피용 펠리클 및 그 제조방법 |
| KR102482650B1 (ko) * | 2021-02-25 | 2022-12-29 | (주)에프에스티 | 질화 붕소 나노 구조 층을 포함하는 극자외선 리소그라피용 펠리클 막 및 그 제조방법 |
| EP4300189A1 (en) | 2021-03-31 | 2024-01-03 | Mitsui Chemicals, Inc. | Pellicle, original plate for light exposure, light exposure device, method for producing pellicle, and method for producing semiconductor device |
| JP2022174894A (ja) * | 2021-05-12 | 2022-11-25 | 日本電気株式会社 | ボロメータ及びその製造方法 |
| US20220365420A1 (en) * | 2021-05-12 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer pellicle membrane |
| JP2022191120A (ja) * | 2021-06-15 | 2022-12-27 | 信越化学工業株式会社 | 気圧調整が容易な露光用ペリクル |
| KR20230012708A (ko) | 2021-07-16 | 2023-01-26 | 인투워드 주식회사 | Euv용 펠리클 및 그 제조 방법 |
| CN117751325A (zh) * | 2021-07-30 | 2024-03-22 | 信越化学工业株式会社 | 防护薄膜、防护膜、带有防护膜的曝光原版、曝光方法、半导体的制造方法和液晶显示板的制造方法 |
| US11860534B2 (en) * | 2021-08-06 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for an EUV lithography mask and a method of manufacturing thereof |
| US20240103357A1 (en) * | 2021-08-26 | 2024-03-28 | Mitsui Chemicals, Inc. | Pellicle film, pellicle, exposure original plate, exposure device, and method for manufacturing pellicle film |
| EP4202546A1 (en) * | 2021-12-22 | 2023-06-28 | Imec VZW | An euv pellicle |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3335330B2 (ja) | 1999-08-09 | 2002-10-15 | 株式会社東芝 | カーボンナノチューブの製造方法およびカーボンナノチューブ膜の製造方法 |
| JP4296328B2 (ja) | 2001-11-28 | 2009-07-15 | 東レ株式会社 | 中空状ナノファイバー含有組成物及び中空状ナノファイバーの製造法 |
| SG141416A1 (en) * | 2003-04-30 | 2008-04-28 | Asml Netherlands Bv | Lithographic apparatus,device manufacturing methods, mask and method of characterising a mask and/or pellicle |
| WO2006011655A1 (ja) | 2004-07-27 | 2006-02-02 | National Institute Of Advanced Industrial Scienceand Technology | 単層カーボンナノチューブおよび配向単層カーボンナノチューブ・バルク構造体ならびにそれらの製造方法・装置および用途 |
| JP2006069165A (ja) | 2004-09-06 | 2006-03-16 | Japan Science & Technology Agency | カーボンナノチューブ複合シート、およびその製造方法 |
| JP5028744B2 (ja) | 2005-02-15 | 2012-09-19 | 富士通株式会社 | カーボンナノチューブの形成方法および電子デバイスの製造方法 |
| US8329135B2 (en) * | 2006-01-06 | 2012-12-11 | National Institute Of Advanced Industrial Science And Technology | Aligned carbon nanotube bulk structure having portions different in density |
| US7767985B2 (en) * | 2006-12-26 | 2010-08-03 | Globalfoundries Inc. | EUV pellicle and method for fabricating semiconductor dies using same |
| CN101284662B (zh) * | 2007-04-13 | 2011-01-05 | 清华大学 | 碳纳米管薄膜的制备方法 |
| JP5266907B2 (ja) * | 2007-06-29 | 2013-08-21 | 東レ株式会社 | カーボンナノチューブ集合体、分散体および導電性フィルム |
| CN101480858B (zh) * | 2008-01-11 | 2014-12-10 | 清华大学 | 碳纳米管复合材料及其制备方法 |
| US8193430B2 (en) * | 2008-01-03 | 2012-06-05 | The University Of Connecticut | Methods for separating carbon nanotubes |
| US8546067B2 (en) * | 2008-03-21 | 2013-10-01 | The Board Of Trustees Of The University Of Illinois | Material assisted laser ablation |
| EP2321703B1 (en) * | 2008-08-06 | 2013-01-16 | ASML Netherlands BV | Optical element for a lithographic apparatus, lithographic apparatus comprising such optical element and method for making the optical element |
| US8351220B2 (en) | 2009-01-28 | 2013-01-08 | Florida State University Research Foundation | Electromagnetic interference shielding structure including carbon nanotube or nanofiber films and methods |
| EP2636642A4 (en) | 2010-11-05 | 2017-12-27 | National Institute of Advanced Industrial Science And Technology | Cnt dispersion liquid, cnt compact, cnt composition, cnt assembly, and method for producing each |
| CN102796991B (zh) | 2011-05-27 | 2014-08-20 | 清华大学 | 石墨烯碳纳米管复合膜结构的制备方法 |
| JP6307064B2 (ja) * | 2013-03-08 | 2018-04-04 | 国立大学法人九州大学 | 金属性単層カーボンナノチューブと半導体性単層カーボンナノチューブとの分離方法 |
| JP6084681B2 (ja) | 2013-03-15 | 2017-02-22 | 旭化成株式会社 | ペリクル膜及びペリクル |
| CN103246157A (zh) * | 2013-05-21 | 2013-08-14 | 上海和辉光电有限公司 | 防尘薄膜框架、光学掩膜版及其安装方法 |
| JP6364404B2 (ja) | 2013-05-24 | 2018-07-25 | 三井化学株式会社 | ペリクル、及びこれらを含むｅｕｖ露光装置 |
| JP2014227331A (ja) * | 2013-05-27 | 2014-12-08 | 日立造船株式会社 | カーボンナノチューブシートおよびその製造方法 |
| US20160367971A1 (en) * | 2013-07-30 | 2016-12-22 | Northeastern University | Catalyst and Method for Synthesis of Carbon Nanomaterials |
| US10108084B2 (en) | 2014-05-19 | 2018-10-23 | Mitsui Chemicals, Inc. | Pellicle membrane, pellicle, original plate for exposure, exposure apparatus, and method of producing semiconductor device |
| JP6367342B2 (ja) | 2014-09-19 | 2018-08-01 | 三井化学株式会社 | ペリクル、ペリクルの製造方法及びペリクルを用いた露光方法 |
| SG11201701805QA (en) | 2014-09-19 | 2017-04-27 | Mitsui Chemicals Inc | Pellicle, production method thereof, exposure method |
| WO2016079052A2 (en) * | 2014-11-17 | 2016-05-26 | Asml Netherlands B.V. | Apparatus |
| JP2016133062A (ja) | 2015-01-20 | 2016-07-25 | いすゞ自動車株式会社 | 排気浄化システム |
| KR102345543B1 (ko) | 2015-08-03 | 2021-12-30 | 삼성전자주식회사 | 펠리클 및 이를 포함하는 포토마스크 조립체 |
| JP6649100B2 (ja) | 2016-02-04 | 2020-02-19 | 日立造船株式会社 | Ｃｎｔ積層体の製造方法およびカーボンナノチューブ撚糸の製造方法 |
| CN116594258A (zh) | 2016-07-05 | 2023-08-15 | 三井化学株式会社 | 防护膜及其组件和组件框体、组件制造方法、曝光原版、曝光装置、半导体装置的制造方法 |
| EP3404487B1 (en) | 2017-05-15 | 2021-12-01 | IMEC vzw | Method for forming a carbon nanotube pellicle membrane |
-
2017
- 2017-07-03 CN CN202310652861.7A patent/CN116594258A/zh active Pending
- 2017-07-03 KR KR1020187035244A patent/KR20190003752A/ko active Application Filing
- 2017-07-03 SG SG11201811618RA patent/SG11201811618RA/en unknown
- 2017-07-03 KR KR1020227041816A patent/KR20220162888A/ko not_active Application Discontinuation
- 2017-07-03 EP EP17824197.2A patent/EP3483655A4/en active Pending
- 2017-07-03 WO PCT/JP2017/024335 patent/WO2018008594A1/ja unknown
- 2017-07-03 CN CN202310652312.XA patent/CN116594257A/zh active Pending
- 2017-07-03 CN CN202310651908.8A patent/CN116609996A/zh active Pending
- 2017-07-03 JP JP2018526366A patent/JP6781864B2/ja active Active
- 2017-07-03 CN CN201780038819.9A patent/CN109416503B/zh active Active
- 2017-07-03 KR KR1020227041813A patent/KR20220165812A/ko not_active Application Discontinuation
- 2017-07-04 TW TW110136705A patent/TW202204252A/zh unknown
- 2017-07-04 TW TW106122342A patent/TWI744348B/zh active
- 2017-07-04 TW TW111149066A patent/TW202321146A/zh unknown
-
2018
- 2018-12-18 US US16/224,028 patent/US11042085B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2018008594A1 (ja) | 2019-04-11 |
| TW202321146A (zh) | 2023-06-01 |
| WO2018008594A1 (ja) | 2018-01-11 |
| KR20190003752A (ko) | 2019-01-09 |
| TW202204252A (zh) | 2022-02-01 |
| US11042085B2 (en) | 2021-06-22 |
| EP3483655A4 (en) | 2020-02-26 |
| TW201821359A (zh) | 2018-06-16 |
| CN116594257A (zh) | 2023-08-15 |
| TWI744348B (zh) | 2021-11-01 |
| CN116594258A (zh) | 2023-08-15 |
| CN109416503B (zh) | 2023-06-09 |
| JP6781864B2 (ja) | 2020-11-11 |
| KR20220165812A (ko) | 2022-12-15 |
| CN109416503A (zh) | 2019-03-01 |
| US20190129300A1 (en) | 2019-05-02 |
| EP3483655A1 (en) | 2019-05-15 |
| KR20220162888A (ko) | 2022-12-08 |
| CN116609996A (zh) | 2023-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11201811618RA (en) | Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device | |
| Kim et al. | Progress in EUV lithography toward manufacturing | |
| TW201614362A (en) | Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device | |
| JP2015148807A5 (ja) | マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 | |
| EP4286941A3 (en) | Pellicle attachment apparatus | |
| SG11201907482YA (en) | Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method | |
| JP2011511465A5 (zh) | ||
| TW200619832A (en) | Lithographic apparatus, method, and computer program product for generating a mask pattern and device manufacturing method using same | |
| JP5806692B2 (ja) | リソグラフィ原版検査方法 | |
| JP2015511769A5 (zh) | ||
| JP2016122684A5 (zh) | ||
| Brouns et al. | NXE pellicle: offering a EUV pellicle solution to the industry | |
| JP2018535125A5 (zh) | ||
| WO2010030018A3 (en) | Pattern forming method and device production method | |
| JP2008310232A5 (zh) | ||
| Khusnatdinov et al. | High-throughput jet and flash imprint lithography for advanced semiconductor memory | |
| KR101291719B1 (ko) | 균일 가압구조를 가진 대면적 임프린팅 장치 | |
| WO2015124457A8 (en) | Lithographic apparatus and method | |
| Hatano et al. | NIL defect performance toward high volume mass production | |
| TW200629372A (en) | A system and method for lithography in semiconductor manufacturing | |
| JP2013219089A5 (zh) | ||
| Ye et al. | Defect reduction for semiconductor memory applications using jet and flash imprint lithography | |
| Aoyama et al. | Impact of realistic source shape and flexibility on source mask optimization | |
| EP2120091A3 (en) | Method for stripping pellicle and stripping apparatus used therein | |
| TW200722935A (en) | Exposure apparatus, exposure method, projection optical system and device manufacturing method |