SG11201706733UA - Photosensitive resin composition, method for manufacturing cured resin film, and semiconductor device - Google Patents
Photosensitive resin composition, method for manufacturing cured resin film, and semiconductor deviceInfo
- Publication number
- SG11201706733UA SG11201706733UA SG11201706733UA SG11201706733UA SG11201706733UA SG 11201706733U A SG11201706733U A SG 11201706733UA SG 11201706733U A SG11201706733U A SG 11201706733UA SG 11201706733U A SG11201706733U A SG 11201706733UA SG 11201706733U A SG11201706733U A SG 11201706733UA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- resin composition
- resin film
- photosensitive resin
- manufacturing cured
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
- C08G73/1053—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the tetracarboxylic moiety
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/22—Polybenzoxazoles
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/12—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with monohydric phenols having only one hydrocarbon substituent ortho on para to the OH group, e.g. p-tert.-butyl phenol
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
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- H01L2924/06—Polymers
- H01L2924/07—Polyamine or polyimide
- H01L2924/07025—Polyimide
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Computer Hardware Design (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015042030 | 2015-03-04 | ||
PCT/JP2016/053765 WO2016140024A1 (ja) | 2015-03-04 | 2016-02-09 | 感光性樹脂組成物、樹脂硬化膜の製造方法および半導体装置 |
Publications (1)
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EP (1) | EP3267254A4 (ja) |
JP (1) | JP6787123B2 (ja) |
KR (1) | KR102456965B1 (ja) |
CN (1) | CN107407869B (ja) |
SG (1) | SG11201706733UA (ja) |
TW (1) | TWI685513B (ja) |
WO (1) | WO2016140024A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107407877B (zh) | 2015-03-24 | 2021-01-01 | 东丽株式会社 | 感光性树脂组合物 |
JP6297757B2 (ja) * | 2015-08-21 | 2018-03-20 | 旭化成株式会社 | 感光性樹脂組成物、ポリイミドの製造方法および半導体装置 |
TWI670329B (zh) * | 2017-02-24 | 2019-09-01 | 財團法人紡織產業綜合研究所 | 用以形成聚醯亞胺的組成物、聚醯亞胺及聚醯亞胺膜 |
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US11561470B2 (en) | 2017-03-29 | 2023-01-24 | Toray Industries, Inc. | Negative photosensitive resin composition, cured film, element provided with cured film, organic EL display provided with cured film, and method for producing same |
JP7069557B2 (ja) * | 2017-03-31 | 2022-05-18 | Hdマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜、及び電子部品 |
JP2018189738A (ja) * | 2017-04-28 | 2018-11-29 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | ポジ型感光性シロキサン組成物、およびそれを用いて形成した硬化膜 |
TWI633822B (zh) * | 2017-05-08 | 2018-08-21 | 欣興電子股份有限公司 | 線路板單元與其製作方法 |
CN108882562B (zh) * | 2017-05-10 | 2020-11-10 | 欣兴电子股份有限公司 | 线路板单元与其制作方法 |
JP6929198B2 (ja) * | 2017-10-31 | 2021-09-01 | 太陽ホールディングス株式会社 | 感光性樹脂組成物、ドライフィルム、硬化物、半導体素子、プリント配線板および電子部品 |
TWI781220B (zh) * | 2017-10-31 | 2022-10-21 | 日商太陽控股股份有限公司 | 感光性樹脂組成物、乾膜、硬化物、半導體元件、印刷配線板及電子零件 |
KR102299419B1 (ko) * | 2018-02-28 | 2021-09-06 | 주식회사 엘지화학 | 감광성 수지 조성물 및 경화막 |
TWI700319B (zh) * | 2018-05-04 | 2020-08-01 | 新應材股份有限公司 | 正型光阻組成物及使用其之切割道形成方法 |
CN111094397B (zh) * | 2018-07-20 | 2022-06-17 | 株式会社Lg化学 | 聚酰亚胺树脂及包含其的负型感光性树脂组合物 |
KR102319362B1 (ko) * | 2018-09-12 | 2021-10-29 | 주식회사 엘지화학 | 감광성 조성물 및 이의 경화물을 포함하는 패턴 |
KR102238704B1 (ko) * | 2018-12-21 | 2021-04-08 | 주식회사 엘지화학 | 가교제 화합물, 이를 포함하는 감광성 조성물, 및 이를 이용한 감광 재료 |
JP7256057B2 (ja) * | 2019-03-29 | 2023-04-11 | 太陽ホールディングス株式会社 | 感光性樹脂組成物、ドライフィルム、硬化物、および電子部品 |
CN114450350A (zh) * | 2019-09-24 | 2022-05-06 | 东丽株式会社 | 树脂组合物、树脂组合物膜、固化膜、使用了它们的中空结构体及半导体装置 |
JP2022029427A (ja) | 2020-08-04 | 2022-02-17 | 信越化学工業株式会社 | ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品 |
JP7431696B2 (ja) | 2020-08-04 | 2024-02-15 | 信越化学工業株式会社 | ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品 |
JP7335217B2 (ja) * | 2020-09-24 | 2023-08-29 | 信越化学工業株式会社 | 感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品 |
US20220315676A1 (en) | 2021-03-23 | 2022-10-06 | Shin-Etsu Chemical Co., Ltd. | Positive photosensitive resin composition, positive photosensitive dry film, method for producing positive photosensitive dry film, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component |
JP2022151614A (ja) | 2021-03-23 | 2022-10-07 | 信越化学工業株式会社 | ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4637967B2 (ja) * | 2002-12-19 | 2011-02-23 | 東京応化工業株式会社 | ホトレジスト組成物の製造方法 |
JP5211438B2 (ja) | 2005-06-09 | 2013-06-12 | 東レ株式会社 | 樹脂組成物およびそれを用いた表示装置 |
WO2007004345A1 (ja) * | 2005-06-30 | 2007-01-11 | Toray Industries, Inc. | 感光性樹脂組成物および接着改良剤 |
JP5061435B2 (ja) | 2005-08-01 | 2012-10-31 | 東レ株式会社 | 耐熱樹脂前駆体組成物およびそれを用いた半導体装置 |
TW200728908A (en) * | 2006-01-25 | 2007-08-01 | Kaneka Corp | Photosensitive dry film resist, printed wiring board using same, and method for producing printed wiring board |
JP4736863B2 (ja) | 2006-03-03 | 2011-07-27 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性ポリアミドイミド樹脂組成物、パターンの製造方法及び電子部品 |
US8187788B2 (en) * | 2006-04-28 | 2012-05-29 | Asahi Kasei Kabushiki Kaisha | Photosensitive resin composition and photosensitive film |
JP4918313B2 (ja) | 2006-09-01 | 2012-04-18 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物 |
JP2008192879A (ja) * | 2007-02-06 | 2008-08-21 | Fujifilm Corp | 半導体集積回路の絶縁膜 |
JP5241280B2 (ja) | 2007-04-06 | 2013-07-17 | 旭化成イーマテリアルズ株式会社 | ポジ型感光性樹脂組成物 |
CN102076740B (zh) * | 2008-07-03 | 2013-08-21 | 旭化成电子材料株式会社 | 耐热性树脂前体及使用其的感光性树脂组合物 |
JP5651917B2 (ja) | 2008-11-25 | 2015-01-14 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
JP5515419B2 (ja) | 2009-05-26 | 2014-06-11 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法並びに電子部品及びその製造方法 |
JP5571990B2 (ja) * | 2009-06-04 | 2014-08-13 | 旭化成イーマテリアルズ株式会社 | ネガ型感光性樹脂組成物、硬化レリーフパターン形成・製造方法、並びに半導体装置 |
WO2011135887A1 (ja) * | 2010-04-28 | 2011-11-03 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物 |
KR101810402B1 (ko) * | 2010-05-13 | 2017-12-19 | 닛산 가가쿠 고교 가부시키 가이샤 | 감광성 수지 조성물 및 디스플레이 장치 |
KR20130016375A (ko) * | 2010-07-02 | 2013-02-14 | 도레이 카부시키가이샤 | 감광성 수지 조성물, 감광성 수지 조성물 필름 및 이들을 이용한 반도체 장치 |
JP2013250429A (ja) | 2012-05-31 | 2013-12-12 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物 |
CN102854748B (zh) * | 2012-09-27 | 2014-05-21 | 浙江荣泰科技企业有限公司 | 感光性组合物及其用途 |
JP6286834B2 (ja) * | 2013-02-22 | 2018-03-07 | 東レ株式会社 | 耐熱性樹脂組成物および耐熱性樹脂膜の製造方法 |
JP5962546B2 (ja) | 2013-03-06 | 2016-08-03 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、その形成方法、及び表示素子 |
US8932799B2 (en) * | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
JP6458949B2 (ja) * | 2013-04-16 | 2019-01-30 | 日産化学株式会社 | 硬化膜形成組成物、配向材および位相差材 |
JP6138925B2 (ja) * | 2013-04-24 | 2017-05-31 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化物の製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、並びに、有機el表示装置 |
JP5987984B2 (ja) * | 2013-06-12 | 2016-09-07 | Jsr株式会社 | 樹脂組成物、感光性樹脂組成物、絶縁膜およびその製法ならびに電子部品 |
JP2015151405A (ja) | 2014-02-10 | 2015-08-24 | 日立化成デュポンマイクロシステムズ株式会社 | ポリイミド前駆体を含む樹脂組成物、硬化膜の製造方法及び電子部品 |
JP6401545B2 (ja) * | 2014-08-19 | 2018-10-10 | 東京応化工業株式会社 | 感光性樹脂組成物及びカーボンブラック並びに感光性樹脂組成物の製造方法 |
EP3889159B1 (en) * | 2014-10-23 | 2024-06-05 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
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2016
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- 2016-02-09 WO PCT/JP2016/053765 patent/WO2016140024A1/ja active Application Filing
- 2016-02-09 CN CN201680012940.XA patent/CN107407869B/zh active Active
- 2016-02-09 SG SG11201706733UA patent/SG11201706733UA/en unknown
- 2016-02-09 EP EP16758719.5A patent/EP3267254A4/en not_active Withdrawn
- 2016-02-09 JP JP2016508881A patent/JP6787123B2/ja active Active
- 2016-02-09 US US15/551,078 patent/US10365559B2/en not_active Expired - Fee Related
- 2016-02-25 TW TW105105580A patent/TWI685513B/zh active
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EP3267254A1 (en) | 2018-01-10 |
KR20170125842A (ko) | 2017-11-15 |
EP3267254A4 (en) | 2018-09-26 |
JP6787123B2 (ja) | 2020-11-18 |
TW201641537A (zh) | 2016-12-01 |
WO2016140024A1 (ja) | 2016-09-09 |
TWI685513B (zh) | 2020-02-21 |
US10365559B2 (en) | 2019-07-30 |
JPWO2016140024A1 (ja) | 2017-12-14 |
US20180031970A1 (en) | 2018-02-01 |
KR102456965B1 (ko) | 2022-10-21 |
CN107407869B (zh) | 2020-09-22 |
CN107407869A (zh) | 2017-11-28 |
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