HK1225513A1 - 曝光裝置及曝光方法、以及器件製造方法 - Google Patents

曝光裝置及曝光方法、以及器件製造方法

Info

Publication number
HK1225513A1
HK1225513A1 HK16113798A HK16113798A HK1225513A1 HK 1225513 A1 HK1225513 A1 HK 1225513A1 HK 16113798 A HK16113798 A HK 16113798A HK 16113798 A HK16113798 A HK 16113798A HK 1225513 A1 HK1225513 A1 HK 1225513A1
Authority
HK
Hong Kong
Prior art keywords
exposure
device manufacturing
exposure apparatus
exposure method
manufacturing
Prior art date
Application number
HK16113798A
Other languages
English (en)
Inventor
Shibazaki Yuichi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1225513A1 publication Critical patent/HK1225513A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
HK16113798A 2014-01-16 2016-12-02 曝光裝置及曝光方法、以及器件製造方法 HK1225513A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014005684 2014-01-16

Publications (1)

Publication Number Publication Date
HK1225513A1 true HK1225513A1 (zh) 2017-09-08

Family

ID=53542866

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16113798A HK1225513A1 (zh) 2014-01-16 2016-12-02 曝光裝置及曝光方法、以及器件製造方法

Country Status (8)

Country Link
US (2) US9915878B2 (zh)
EP (1) EP3096346A4 (zh)
JP (2) JP6380412B2 (zh)
KR (2) KR101963012B1 (zh)
CN (1) CN105917441A (zh)
HK (1) HK1225513A1 (zh)
TW (1) TW201530264A (zh)
WO (1) WO2015107976A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10281830B2 (en) * 2015-07-14 2019-05-07 Asml Netherlands B.V. Patterning device cooling systems in a lithographic apparatus
NL2017904A (en) 2015-12-18 2017-06-26 Asml Netherlands Bv Optical System and Method
JP6925783B2 (ja) * 2016-05-26 2021-08-25 株式会社アドテックエンジニアリング パターン描画装置及びパターン描画方法
KR101971272B1 (ko) 2016-06-02 2019-08-27 주식회사 더웨이브톡 패턴 구조물 검사 장치 및 검사 방법
CN107883884B (zh) 2016-09-30 2019-10-25 上海微电子装备（集团）股份有限公司 一种光学测量装置和方法
CN107883887B (zh) * 2016-09-30 2019-11-26 上海微电子装备（集团）股份有限公司 一种光学测量装置和方法
CN110337707B (zh) * 2017-02-13 2021-09-28 株式会社日立高新技术 带电粒子线装置
JP2022110461A (ja) * 2021-01-18 2022-07-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及びその調整方法
TWI776680B (zh) * 2021-09-16 2022-09-01 日商新川股份有限公司 安裝裝置以及安裝裝置中的平行度檢測方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6386429A (ja) * 1986-09-30 1988-04-16 Toshiba Corp Ｘ線マスクのひずみ測定法
JPH01230046A (ja) * 1988-03-10 1989-09-13 Toshiba Corp 露光監視装置
JP2787699B2 (ja) * 1989-04-03 1998-08-20 株式会社ニコン 干渉パターンの強度測定方法および露光装置
JP3047461B2 (ja) * 1990-11-26 2000-05-29 株式会社ニコン 投影露光装置、投影露光方法、及び半導体集積回路製造方法
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JP3265503B2 (ja) * 1993-06-11 2002-03-11 株式会社ニコン 露光方法及び装置
SG102627A1 (en) 1996-11-28 2004-03-26 Nikon Corp Lithographic device
JP2000505958A (ja) 1996-12-24 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ２個の物品ホルダを有する二次元バランス位置決め装置及びこの位置決め装置を有するリソグラフ装置
JPH10247617A (ja) * 1997-03-03 1998-09-14 Nikon Corp 投影露光方法及び投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
IL138374A (en) 1998-03-11 2004-07-25 Nikon Corp An ultraviolet laser device and an exposure device that includes such a device
SG124257A1 (en) 2000-02-25 2006-08-30 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
JP2002222761A (ja) * 2000-11-22 2002-08-09 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
EP1364257A1 (en) 2001-02-27 2003-11-26 ASML US, Inc. Simultaneous imaging of two reticles
JP2003142365A (ja) * 2001-10-31 2003-05-16 Canon Inc 露光装置及び露光方法
JP2004165250A (ja) * 2002-11-11 2004-06-10 Nikon Corp マスク検査方法、マスク検査装置、露光方法、及び露光装置
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
DE60326384D1 (de) 2002-12-13 2009-04-09 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
US6937349B2 (en) 2003-05-02 2005-08-30 Mitutoyo Corporation Systems and methods for absolute positioning using repeated quasi-random pattern
JP2006019560A (ja) * 2004-07-02 2006-01-19 Canon Inc 露光装置、走査型露光装置およびデバイス製造方法
JP4545580B2 (ja) 2004-12-27 2010-09-15 株式会社ミツトヨ 面内方向変位計
JP4817700B2 (ja) * 2005-04-04 2011-11-16 キヤノン株式会社 露光装置及び方法、並びに、デバイス製造方法
JP5017556B2 (ja) * 2007-03-19 2012-09-05 埼玉県 変形測定装置、変形測定方法および変形測定プログラム
US8994918B2 (en) * 2010-10-21 2015-03-31 Nikon Corporation Apparatus and methods for measuring thermally induced reticle distortion
NL2007615A (en) * 2010-11-30 2012-05-31 Asml Netherlands Bv Method of operating a patterning device and lithographic apparatus.
JP2013175541A (ja) * 2012-02-24 2013-09-05 Nikon Corp マスク及びその変形量計測方法、並びに露光方法及び装置
JP2013247258A (ja) * 2012-05-28 2013-12-09 Nikon Corp アライメント方法、露光方法、及びデバイス製造方法、並びにデバイス製造システム

Also Published As

Publication number Publication date
JP6380412B2 (ja) 2018-08-29
TW201530264A (zh) 2015-08-01
JP2018173663A (ja) 2018-11-08
JPWO2015107976A1 (ja) 2017-03-23
EP3096346A1 (en) 2016-11-23
CN105917441A (zh) 2016-08-31
US20180143539A1 (en) 2018-05-24
KR101963012B1 (ko) 2019-03-27
US20160357116A1 (en) 2016-12-08
EP3096346A4 (en) 2017-09-27
WO2015107976A1 (ja) 2015-07-23
KR20190032647A (ko) 2019-03-27
KR20160106733A (ko) 2016-09-12
US9915878B2 (en) 2018-03-13

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