SG11201603456VA - Field-effect transistor, display element, image display device, and system - Google Patents
Field-effect transistor, display element, image display device, and systemInfo
- Publication number
- SG11201603456VA SG11201603456VA SG11201603456VA SG11201603456VA SG11201603456VA SG 11201603456V A SG11201603456V A SG 11201603456VA SG 11201603456V A SG11201603456V A SG 11201603456VA SG 11201603456V A SG11201603456V A SG 11201603456VA SG 11201603456V A SG11201603456V A SG 11201603456VA
- Authority
- SG
- Singapore
- Prior art keywords
- field
- effect transistor
- display device
- image display
- display element
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3696—Generation of voltages supplied to electrode drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0278—Details of driving circuits arranged to drive both scan and data electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013225182 | 2013-10-30 | ||
JP2014164080A JP6394171B2 (ja) | 2013-10-30 | 2014-08-12 | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
PCT/JP2014/078842 WO2015064670A1 (en) | 2013-10-30 | 2014-10-23 | Field-effect transistor, display element, image display device, and system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201603456VA true SG11201603456VA (en) | 2016-05-30 |
Family
ID=53004268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201603456VA SG11201603456VA (en) | 2013-10-30 | 2014-10-23 | Field-effect transistor, display element, image display device, and system |
Country Status (10)
Country | Link |
---|---|
US (2) | US9972274B2 (ko) |
EP (1) | EP3063783B1 (ko) |
JP (1) | JP6394171B2 (ko) |
KR (2) | KR101856078B1 (ko) |
CN (2) | CN110047938A (ko) |
BR (1) | BR112016009806B1 (ko) |
RU (1) | RU2630708C1 (ko) |
SG (1) | SG11201603456VA (ko) |
TW (1) | TWI568000B (ko) |
WO (1) | WO2015064670A1 (ko) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6015389B2 (ja) * | 2012-11-30 | 2016-10-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP6394171B2 (ja) * | 2013-10-30 | 2018-09-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP6582655B2 (ja) * | 2015-07-14 | 2019-10-02 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP6794706B2 (ja) * | 2015-10-23 | 2020-12-02 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP6878820B2 (ja) * | 2015-11-17 | 2021-06-02 | 株式会社リコー | 電界効果型トランジスタ、表示素子、表示装置、システム、及び電界効果型トランジスタの製造方法 |
JP6607013B2 (ja) | 2015-12-08 | 2019-11-20 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP2017105013A (ja) | 2015-12-08 | 2017-06-15 | 株式会社リコー | ガスバリア性積層体、半導体装置、表示素子、表示装置、システム |
US10600916B2 (en) | 2015-12-08 | 2020-03-24 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
US10170635B2 (en) | 2015-12-09 | 2019-01-01 | Ricoh Company, Ltd. | Semiconductor device, display device, display apparatus, and system |
JP6907512B2 (ja) * | 2015-12-15 | 2021-07-21 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
CN106952948A (zh) * | 2016-01-06 | 2017-07-14 | 中华映管股份有限公司 | 主动元件及其制作方法 |
JP6665536B2 (ja) | 2016-01-12 | 2020-03-13 | 株式会社リコー | 酸化物半導体 |
WO2017135029A1 (ja) | 2016-02-01 | 2017-08-10 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
JP6701835B2 (ja) | 2016-03-11 | 2020-05-27 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP6855848B2 (ja) * | 2016-03-18 | 2021-04-07 | 株式会社リコー | 電界効果型トランジスタの製造方法、揮発性半導体メモリ素子の製造方法、不揮発性半導体メモリ素子の製造方法、表示素子の製造方法、画像表示装置の製造方法、システムの製造方法 |
KR20180124934A (ko) | 2016-03-18 | 2018-11-21 | 가부시키가이샤 리코 | 전계 효과형 트랜지스터의 제조 방법 |
US10818705B2 (en) | 2016-03-18 | 2020-10-27 | Ricoh Company, Ltd. | Method for manufacturing a field effect transistor, method for manufacturing a volatile semiconductor memory element, method for manufacturing a non-volatile semiconductor memory element, method for manufacturing a display element, method for manufacturing an image display device, and method for manufacturing a system |
US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
KR20180033352A (ko) | 2016-09-23 | 2018-04-03 | 삼성디스플레이 주식회사 | 캡핑층을 포함하는 유기발광 표시장치 |
JP6848405B2 (ja) * | 2016-12-07 | 2021-03-24 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
JP2018148145A (ja) * | 2017-03-08 | 2018-09-20 | 株式会社リコー | 電界効果型トランジスタ、表示素子、表示装置、システム |
JP2018156963A (ja) * | 2017-03-15 | 2018-10-04 | 株式会社リコー | 電界効果型トランジスタ、表示素子、表示装置、システム、及びそれらの製造方法 |
CN111051968A (zh) * | 2017-05-11 | 2020-04-21 | 贝勒大学 | 场效应可调谐介电常数近零吸收体 |
US10688811B2 (en) | 2018-02-27 | 2020-06-23 | Ricoh Company, Ltd. | Air blower, drying device, liquid discharge apparatus, and treatment-liquid application device |
KR20200126408A (ko) * | 2018-03-06 | 2020-11-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
JP6986231B2 (ja) | 2018-03-16 | 2021-12-22 | 株式会社リコー | 塗布装置及び画像形成システム |
KR102215837B1 (ko) | 2018-03-19 | 2021-02-16 | 가부시키가이샤 리코 | 산화물 형성용 도포액, 산화물막의 제조 방법, 및 전계 효과형 트랜지스터의 제조 방법 |
CN108933179B (zh) * | 2018-07-05 | 2020-06-16 | 深圳市华星光电半导体显示技术有限公司 | 一种薄膜晶体管及其制作方法 |
JP7305933B2 (ja) | 2018-07-23 | 2023-07-11 | 株式会社リコー | 金属酸化物膜形成用塗布液、酸化物絶縁体膜、電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
KR20200011025A (ko) | 2018-07-23 | 2020-01-31 | 가부시키가이샤 리코 | 금속 산화물, 전계 효과형 트랜지스터, 및 전계 효과형 트랜지스터의 제조 방법 |
JP7135682B2 (ja) | 2018-09-28 | 2022-09-13 | 株式会社リコー | 給送装置、画像形成装置及び画像形成システム |
CN112242441A (zh) * | 2019-07-16 | 2021-01-19 | 联华电子股份有限公司 | 高电子迁移率晶体管 |
RU2748455C1 (ru) * | 2020-07-08 | 2021-05-25 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" | Способ изготовления полупроводникового прибора |
CN112687554B (zh) * | 2020-12-28 | 2023-05-09 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板制备方法、阵列基板及显示装置 |
US20220231153A1 (en) * | 2021-01-15 | 2022-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS Fabrication Methods for Back-Gate Transistor |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59150430A (ja) * | 1983-02-17 | 1984-08-28 | Toshiba Corp | 半導体デバイス |
JP3666915B2 (ja) | 1993-12-17 | 2005-06-29 | Azエレクトロニックマテリアルズ株式会社 | セラミックスの低温形成方法 |
JP4472056B2 (ja) | 1999-07-23 | 2010-06-02 | 株式会社半導体エネルギー研究所 | エレクトロルミネッセンス表示装置及びその作製方法 |
EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
JP4278405B2 (ja) * | 2003-02-28 | 2009-06-17 | シャープ株式会社 | 酸化物半導体発光素子およびその製造方法 |
JP4108633B2 (ja) * | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
US20070152276A1 (en) * | 2005-12-30 | 2007-07-05 | International Business Machines Corporation | High performance CMOS circuits, and methods for fabricating the same |
CN101632179B (zh) * | 2007-04-06 | 2012-05-30 | 夏普株式会社 | 半导体元件及其制造方法、以及包括该半导体元件的电子器件 |
KR20080099084A (ko) * | 2007-05-08 | 2008-11-12 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
WO2009081885A1 (ja) | 2007-12-25 | 2009-07-02 | Idemitsu Kosan Co., Ltd. | 酸化物半導体電界効果型トランジスタ及びその製造方法 |
JP5141325B2 (ja) * | 2008-03-21 | 2013-02-13 | 凸版印刷株式会社 | 有機elディスプレイパネルの製造方法 |
JP5430248B2 (ja) * | 2008-06-24 | 2014-02-26 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
KR101516050B1 (ko) * | 2008-08-27 | 2015-05-04 | 이데미쓰 고산 가부시키가이샤 | 전계 효과형 트랜지스터, 그의 제조 방법 및 스퍼터링 타겟 |
JP5305790B2 (ja) * | 2008-08-28 | 2013-10-02 | 株式会社東芝 | 半導体発光素子 |
JP5552753B2 (ja) * | 2008-10-08 | 2014-07-16 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
JP2010103203A (ja) | 2008-10-22 | 2010-05-06 | Konica Minolta Holdings Inc | 薄膜トランジスタおよびその製造方法 |
KR20130138352A (ko) | 2008-11-07 | 2013-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP5515281B2 (ja) | 2008-12-03 | 2014-06-11 | ソニー株式会社 | 薄膜トランジスタ、表示装置、電子機器および薄膜トランジスタの製造方法 |
JP2010182819A (ja) | 2009-02-04 | 2010-08-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
US20100308418A1 (en) | 2009-06-09 | 2010-12-09 | Knut Stahrenberg | Semiconductor Devices and Methods of Manufacture Thereof |
WO2011027723A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101872229B1 (ko) | 2009-10-21 | 2018-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN105097952B (zh) * | 2009-12-25 | 2018-12-21 | 株式会社理光 | 绝缘膜形成墨水、绝缘膜制造方法和半导体制造方法 |
JP5633346B2 (ja) | 2009-12-25 | 2014-12-03 | 株式会社リコー | 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム |
JP5899615B2 (ja) * | 2010-03-18 | 2016-04-06 | 株式会社リコー | 絶縁膜の製造方法及び半導体装置の製造方法 |
TWI589042B (zh) * | 2010-01-20 | 2017-06-21 | 半導體能源研究所股份有限公司 | 發光裝置,撓性發光裝置,電子裝置,照明設備,以及發光裝置和撓性發光裝置的製造方法 |
JP2012216780A (ja) | 2011-03-31 | 2012-11-08 | Ricoh Co Ltd | p型酸化物、p型酸化物製造用組成物、p型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム |
JP6076038B2 (ja) * | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR101942980B1 (ko) * | 2012-01-17 | 2019-01-29 | 삼성디스플레이 주식회사 | 반도체 디바이스 및 그 형성 방법 |
US9653614B2 (en) * | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9159288B2 (en) * | 2012-03-09 | 2015-10-13 | Apple Inc. | Gate line driver circuit for display element array |
JP6043244B2 (ja) * | 2012-06-06 | 2016-12-14 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
JP5562384B2 (ja) * | 2012-08-28 | 2014-07-30 | キヤノン株式会社 | 薄膜トランジスタおよびその製造方法 |
US20150214374A1 (en) * | 2012-08-30 | 2015-07-30 | Sharp Kabushiki Kaisha | Circuit board and display device |
WO2014034512A1 (ja) * | 2012-08-30 | 2014-03-06 | シャープ株式会社 | 薄膜トランジスタ基板及び表示装置 |
US9853164B2 (en) * | 2012-10-03 | 2017-12-26 | Sharp Kabushiki Kaisha | Semiconductor device and display device |
JP6015389B2 (ja) * | 2012-11-30 | 2016-10-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
US9035287B2 (en) * | 2013-02-01 | 2015-05-19 | Polyera Corporation | Polymeric materials for use in metal-oxide-semiconductor field-effect transistors |
KR20150001154A (ko) * | 2013-06-26 | 2015-01-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR102146070B1 (ko) * | 2013-07-01 | 2020-08-21 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
JP6394171B2 (ja) * | 2013-10-30 | 2018-09-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
-
2014
- 2014-08-12 JP JP2014164080A patent/JP6394171B2/ja active Active
- 2014-10-23 RU RU2016120847A patent/RU2630708C1/ru active
- 2014-10-23 KR KR1020167013994A patent/KR101856078B1/ko active IP Right Grant
- 2014-10-23 KR KR1020187012510A patent/KR102137664B1/ko active IP Right Grant
- 2014-10-23 WO PCT/JP2014/078842 patent/WO2015064670A1/en active Application Filing
- 2014-10-23 EP EP14856937.9A patent/EP3063783B1/en active Active
- 2014-10-23 CN CN201910211585.4A patent/CN110047938A/zh active Pending
- 2014-10-23 BR BR112016009806-4A patent/BR112016009806B1/pt active IP Right Grant
- 2014-10-23 SG SG11201603456VA patent/SG11201603456VA/en unknown
- 2014-10-23 CN CN201480059693.XA patent/CN105684135B/zh active Active
- 2014-10-23 US US15/032,192 patent/US9972274B2/en active Active
- 2014-10-27 TW TW103137055A patent/TWI568000B/zh active
-
2018
- 2018-03-29 US US15/939,665 patent/US10565954B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP6394171B2 (ja) | 2018-09-26 |
CN105684135A (zh) | 2016-06-15 |
KR20160078424A (ko) | 2016-07-04 |
US20160267873A1 (en) | 2016-09-15 |
CN105684135B (zh) | 2019-04-12 |
RU2630708C1 (ru) | 2017-09-12 |
BR112016009806B1 (pt) | 2022-07-26 |
KR101856078B1 (ko) | 2018-05-09 |
US20180226046A1 (en) | 2018-08-09 |
KR102137664B1 (ko) | 2020-07-24 |
US9972274B2 (en) | 2018-05-15 |
TW201523891A (zh) | 2015-06-16 |
TWI568000B (zh) | 2017-01-21 |
JP2015111653A (ja) | 2015-06-18 |
CN110047938A (zh) | 2019-07-23 |
US10565954B2 (en) | 2020-02-18 |
EP3063783B1 (en) | 2020-02-12 |
EP3063783A4 (en) | 2017-06-28 |
WO2015064670A1 (en) | 2015-05-07 |
KR20180049246A (ko) | 2018-05-10 |
EP3063783A1 (en) | 2016-09-07 |
BR112016009806A2 (ko) | 2017-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201603456VA (en) | Field-effect transistor, display element, image display device, and system | |
EP2926366A4 (en) | FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DEVICE AND SYSTEM | |
EP2985651A4 (en) | IMAGE DISPLAY DEVICE AND DISPLAY DEVICE | |
EP2985652A4 (en) | IMAGE DISPLAY DEVICE AND DISPLAY DEVICE | |
TWI561892B (en) | Curved display device | |
EP3013042A4 (en) | IMAGE DISPLAY DEVICE AND METHOD | |
GB2526959B (en) | Planar device on fin-based transistor architecture | |
EP2960896A4 (en) | VISIOCASQUE AND IMAGE DISPLAY DEVICE | |
SG10201605788RA (en) | Field-effect transistor, display element, image display device, and system | |
EP2993497A4 (en) | OPTICAL DIFFUSION FILM FOR AN INDICATION AND DISPLAY DEVICE THEREFOR | |
EP2963917A4 (en) | IMAGING ELEMENT AND ELECTRONIC DEVICE THEREFOR | |
EP3086546A4 (en) | IMAGE CAPTURE MODULE AND IMAGE CAPTURE DEVICE | |
EP2972574A4 (en) | ELECTROCHROMIC DISPLAY ELEMENT AND IMAGE DISPLAY DEVICE | |
GB2518721B (en) | Display Device | |
EP2953116A4 (en) | DISPLAY DEVICE AND DEVICE | |
EP2942774A4 (en) | IMAGE DISPLAY DEVICE | |
GB201306989D0 (en) | Information display device | |
EP3079356A4 (en) | Imaging element and imaging device | |
EP3041216A4 (en) | Imaging system and imaging device | |
GB201421570D0 (en) | Display device | |
GB2511541B (en) | Field effect transistor device | |
EP3043551A4 (en) | DISPLAY DEVICE | |
EP3032330A4 (en) | Light-source device, light-source unit, and image display device | |
EP2960916A4 (en) | DISPLAY DEVICE | |
EP2849080A4 (en) | METHOD AND DEVICE FOR DISPLAYING IMAGES |