SG11201603456VA - Field-effect transistor, display element, image display device, and system - Google Patents

Field-effect transistor, display element, image display device, and system

Info

Publication number
SG11201603456VA
SG11201603456VA SG11201603456VA SG11201603456VA SG11201603456VA SG 11201603456V A SG11201603456V A SG 11201603456VA SG 11201603456V A SG11201603456V A SG 11201603456VA SG 11201603456V A SG11201603456V A SG 11201603456VA SG 11201603456V A SG11201603456V A SG 11201603456VA
Authority
SG
Singapore
Prior art keywords
field
effect transistor
display device
image display
display element
Prior art date
Application number
SG11201603456VA
Inventor
Ryoichi Saotome
Naoyuki Ueda
Yuki Nakamura
Yukiko Abe
Shinji Matsumoto
Yuji Sone
Sadanori Arae
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of SG11201603456VA publication Critical patent/SG11201603456VA/en

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3696—Generation of voltages supplied to electrode drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0278—Details of driving circuits arranged to drive both scan and data electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
SG11201603456VA 2013-10-30 2014-10-23 Field-effect transistor, display element, image display device, and system SG11201603456VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013225182 2013-10-30
JP2014164080A JP6394171B2 (en) 2013-10-30 2014-08-12 Field effect transistor, display element, image display device, and system
PCT/JP2014/078842 WO2015064670A1 (en) 2013-10-30 2014-10-23 Field-effect transistor, display element, image display device, and system

Publications (1)

Publication Number Publication Date
SG11201603456VA true SG11201603456VA (en) 2016-05-30

Family

ID=53004268

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201603456VA SG11201603456VA (en) 2013-10-30 2014-10-23 Field-effect transistor, display element, image display device, and system

Country Status (10)

Country Link
US (2) US9972274B2 (en)
EP (1) EP3063783B1 (en)
JP (1) JP6394171B2 (en)
KR (2) KR101856078B1 (en)
CN (2) CN105684135B (en)
BR (1) BR112016009806B1 (en)
RU (1) RU2630708C1 (en)
SG (1) SG11201603456VA (en)
TW (1) TWI568000B (en)
WO (1) WO2015064670A1 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6015389B2 (en) * 2012-11-30 2016-10-26 株式会社リコー Field effect transistor, display element, image display device, and system
JP6394171B2 (en) * 2013-10-30 2018-09-26 株式会社リコー Field effect transistor, display element, image display device, and system
JP6582655B2 (en) * 2015-07-14 2019-10-02 株式会社リコー Field effect transistor, display element, image display device, and system
JP6794706B2 (en) * 2015-10-23 2020-12-02 株式会社リコー Field effect transistors, display elements, image display devices, and systems
JP6878820B2 (en) * 2015-11-17 2021-06-02 株式会社リコー Field-effect transistor, display element, display device, system, and method of manufacturing field-effect transistor
US10600916B2 (en) 2015-12-08 2020-03-24 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
JP2017105013A (en) 2015-12-08 2017-06-15 株式会社リコー Gas barrier laminate, semiconductor device, display element, display device and system
JP6607013B2 (en) 2015-12-08 2019-11-20 株式会社リコー Field effect transistor, display element, image display device, and system
US10170635B2 (en) 2015-12-09 2019-01-01 Ricoh Company, Ltd. Semiconductor device, display device, display apparatus, and system
JP6907512B2 (en) * 2015-12-15 2021-07-21 株式会社リコー Manufacturing method of field effect transistor
CN106952948A (en) * 2016-01-06 2017-07-14 中华映管股份有限公司 Active member and preparation method thereof
JP6665536B2 (en) 2016-01-12 2020-03-13 株式会社リコー Oxide semiconductor
EP3432348A4 (en) 2016-02-01 2019-03-20 Ricoh Company, Ltd. Field effect transistor, method for manufacturing same, display element, display apparatus, and system
JP6701835B2 (en) * 2016-03-11 2020-05-27 株式会社リコー Field effect transistor, display element, image display device, and system
CN108780756B (en) 2016-03-18 2021-10-22 株式会社理光 Method for producing a field effect transistor
JP6855848B2 (en) * 2016-03-18 2021-04-07 株式会社リコー Field-effect transistor manufacturing method, volatile semiconductor memory device manufacturing method, non-volatile semiconductor memory device manufacturing method, display element manufacturing method, image display device manufacturing method, system manufacturing method
US10818705B2 (en) * 2016-03-18 2020-10-27 Ricoh Company, Ltd. Method for manufacturing a field effect transistor, method for manufacturing a volatile semiconductor memory element, method for manufacturing a non-volatile semiconductor memory element, method for manufacturing a display element, method for manufacturing an image display device, and method for manufacturing a system
US20180016678A1 (en) 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
KR20180033352A (en) 2016-09-23 2018-04-03 삼성디스플레이 주식회사 Organic light emitting diode display compring capping layer
JP6848405B2 (en) * 2016-12-07 2021-03-24 株式会社リコー Manufacturing method of field effect transistor
JP2018148145A (en) * 2017-03-08 2018-09-20 株式会社リコー Field effect transistor, display element, display device, and system
JP2018156963A (en) * 2017-03-15 2018-10-04 株式会社リコー Field-effect transistor, display element, display device, system, and method of manufacturing them
CN111051968A (en) * 2017-05-11 2020-04-21 贝勒大学 Field-effect tunable near-zero dielectric constant absorber
US10688811B2 (en) 2018-02-27 2020-06-23 Ricoh Company, Ltd. Air blower, drying device, liquid discharge apparatus, and treatment-liquid application device
JP7246365B2 (en) * 2018-03-06 2023-03-27 株式会社半導体エネルギー研究所 Displays and electronics
JP6986231B2 (en) 2018-03-16 2021-12-22 株式会社リコー Coating device and image forming system
EP3544047A3 (en) 2018-03-19 2019-11-20 Ricoh Company, Ltd. Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor
CN108933179B (en) * 2018-07-05 2020-06-16 深圳市华星光电半导体显示技术有限公司 Thin film transistor and manufacturing method thereof
JP7305933B2 (en) 2018-07-23 2023-07-11 株式会社リコー Coating solution for forming metal oxide film, oxide insulator film, field effect transistor, display device, image display device, and system
CN110752255A (en) 2018-07-23 2020-02-04 株式会社理光 Metal oxide, field effect transistor and manufacturing method thereof
JP7135682B2 (en) 2018-09-28 2022-09-13 株式会社リコー Feeding device, image forming device and image forming system
CN112242441A (en) * 2019-07-16 2021-01-19 联华电子股份有限公司 High electron mobility transistor
RU2748455C1 (en) * 2020-07-08 2021-05-25 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Method for manufacturing semiconductor device
CN112687554B (en) * 2020-12-28 2023-05-09 深圳市华星光电半导体显示技术有限公司 Array substrate preparation method, array substrate and display device
US20220231153A1 (en) * 2021-01-15 2022-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS Fabrication Methods for Back-Gate Transistor

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150430A (en) * 1983-02-17 1984-08-28 Toshiba Corp Semiconductor device
JP3666915B2 (en) 1993-12-17 2005-06-29 Ａｚエレクトロニックマテリアルズ株式会社 Low temperature forming method of ceramics
JP4472056B2 (en) 1999-07-23 2010-06-02 株式会社半導体エネルギー研究所 Electroluminescence display device and manufacturing method thereof
EP1434282A3 (en) * 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
JP4278405B2 (en) * 2003-02-28 2009-06-17 シャープ株式会社 Oxide semiconductor light emitting device and manufacturing method thereof
JP4108633B2 (en) 2003-06-20 2008-06-25 シャープ株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
JP2007073705A (en) 2005-09-06 2007-03-22 Canon Inc Oxide-semiconductor channel film transistor and its method of manufacturing same
US20070152276A1 (en) * 2005-12-30 2007-07-05 International Business Machines Corporation High performance CMOS circuits, and methods for fabricating the same
CN101632179B (en) * 2007-04-06 2012-05-30 夏普株式会社 Semiconductor element, method for manufacturing the semiconductor element, and electronic device provided with the semiconductor element
KR20080099084A (en) * 2007-05-08 2008-11-12 삼성전자주식회사 Thin film transistor and manufacturing method for the same
CN101911303B (en) 2007-12-25 2013-03-27 出光兴产株式会社 Oxide semiconductor field effect transistor and method for manufacturing the same
JP5141325B2 (en) * 2008-03-21 2013-02-13 凸版印刷株式会社 Manufacturing method of organic EL display panel
JP5430248B2 (en) * 2008-06-24 2014-02-26 富士フイルム株式会社 Thin film field effect transistor and display device
KR101538283B1 (en) * 2008-08-27 2015-07-22 이데미쓰 고산 가부시키가이샤 Field-effect transistor, method for manufacturing same, and sputtering target
JP5305790B2 (en) * 2008-08-28 2013-10-02 株式会社東芝 Semiconductor light emitting device
JP5552753B2 (en) * 2008-10-08 2014-07-16 ソニー株式会社 Thin film transistor and display device
JP2010103203A (en) 2008-10-22 2010-05-06 Konica Minolta Holdings Inc Thin-film transistor and method of manufacturing the same
KR101711249B1 (en) 2008-11-07 2017-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of manufacturing a semiconductor device
JP5515281B2 (en) 2008-12-03 2014-06-11 ソニー株式会社 THIN FILM TRANSISTOR, DISPLAY DEVICE, ELECTRONIC DEVICE, AND METHOD FOR PRODUCING THIN FILM TRANSISTOR
JP2010182819A (en) 2009-02-04 2010-08-19 Sony Corp Thin-film transistor, and display device
US20100308418A1 (en) 2009-06-09 2010-12-09 Knut Stahrenberg Semiconductor Devices and Methods of Manufacture Thereof
CN103151387A (en) 2009-09-04 2013-06-12 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
CN102598248B (en) 2009-10-21 2015-09-23 株式会社半导体能源研究所 Semiconductor device
JP5633346B2 (en) 2009-12-25 2014-12-03 株式会社リコー Field effect transistor, semiconductor memory, display element, image display apparatus and system
WO2011078398A1 (en) * 2009-12-25 2011-06-30 Ricoh Company, Ltd. Field-effect transistor, semiconductor memory, display element, image display device, and system
JP5899615B2 (en) * 2010-03-18 2016-04-06 株式会社リコー Insulating film manufacturing method and semiconductor device manufacturing method
TWI589042B (en) * 2010-01-20 2017-06-21 半導體能源研究所股份有限公司 Light-emitting device, flexible light-emitting device, electronic device, lighting apparatus, and method of manufacturing light-emitting device and flexible-light emitting device
JP2012216780A (en) 2011-03-31 2012-11-08 Ricoh Co Ltd P-type oxide, p-type oxide manufacturing composition, p-type oxide manufacturing method, semiconductor element, display element, image display device and system
JP6076038B2 (en) * 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 Method for manufacturing display device
KR101942980B1 (en) * 2012-01-17 2019-01-29 삼성디스플레이 주식회사 Semiconductor device and method for forming the same
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9159288B2 (en) * 2012-03-09 2015-10-13 Apple Inc. Gate line driver circuit for display element array
WO2013183733A1 (en) * 2012-06-06 2013-12-12 株式会社神戸製鋼所 Thin film transistor
JP5562384B2 (en) * 2012-08-28 2014-07-30 キヤノン株式会社 Thin film transistor and manufacturing method thereof
WO2014034512A1 (en) * 2012-08-30 2014-03-06 シャープ株式会社 Thin film transistor substrate and display device
US20150214374A1 (en) * 2012-08-30 2015-07-30 Sharp Kabushiki Kaisha Circuit board and display device
US9853164B2 (en) * 2012-10-03 2017-12-26 Sharp Kabushiki Kaisha Semiconductor device and display device
JP6015389B2 (en) 2012-11-30 2016-10-26 株式会社リコー Field effect transistor, display element, image display device, and system
US9035287B2 (en) * 2013-02-01 2015-05-19 Polyera Corporation Polymeric materials for use in metal-oxide-semiconductor field-effect transistors
KR20150001154A (en) * 2013-06-26 2015-01-06 삼성디스플레이 주식회사 Thin film transistor substrate and manufacturing method therrof
KR102146070B1 (en) * 2013-07-01 2020-08-21 삼성디스플레이 주식회사 Organic Light Emitting Display
JP6394171B2 (en) * 2013-10-30 2018-09-26 株式会社リコー Field effect transistor, display element, image display device, and system

Also Published As

Publication number Publication date
KR102137664B1 (en) 2020-07-24
BR112016009806B1 (en) 2022-07-26
JP2015111653A (en) 2015-06-18
US20180226046A1 (en) 2018-08-09
US9972274B2 (en) 2018-05-15
KR20180049246A (en) 2018-05-10
US10565954B2 (en) 2020-02-18
KR101856078B1 (en) 2018-05-09
EP3063783A1 (en) 2016-09-07
CN105684135B (en) 2019-04-12
BR112016009806A2 (en) 2017-08-01
TW201523891A (en) 2015-06-16
CN110047938A (en) 2019-07-23
US20160267873A1 (en) 2016-09-15
JP6394171B2 (en) 2018-09-26
EP3063783A4 (en) 2017-06-28
RU2630708C1 (en) 2017-09-12
WO2015064670A1 (en) 2015-05-07
TWI568000B (en) 2017-01-21
KR20160078424A (en) 2016-07-04
EP3063783B1 (en) 2020-02-12
CN105684135A (en) 2016-06-15

Similar Documents

Publication Publication Date Title
SG11201603456VA (en) Field-effect transistor, display element, image display device, and system
EP2926366A4 (en) Field-effect transistor, display element, image display device, and system
EP2985651A4 (en) Image display device and display device
EP2985652A4 (en) Image display device and display device
TWI561892B (en) Curved display device
EP3013042A4 (en) Image display device and image display method
GB2526959B (en) Planar device on fin-based transistor architecture
EP2960896A4 (en) Head-mounted display and image display device
SG10201605788RA (en) Field-effect transistor, display element, image display device, and system
EP2993497A4 (en) Display optical-diffusion film and display device using same
EP2963917A4 (en) Imaging element, and electronic device
EP3086546A4 (en) Image capturing module and image capturing device
EP2972574A4 (en) Electrochromic display element and image display device
EP2942774A4 (en) Image display device
EP2953116A4 (en) Display apparatus and device
GB201306989D0 (en) Information display device
EP2965307A4 (en) Display device
EP3079356A4 (en) Imaging element and imaging device
GB2511541B (en) Field effect transistor device
EP3041216A4 (en) Imaging system and imaging device
EP3043551A4 (en) Display device
EP2960916A4 (en) Display device
EP3432363A4 (en) Field effect transistor, display element, image display device, and system
EP3032330A4 (en) Light-source device, light-source unit, and image display device
EP2849080A4 (en) Image display method and device