SG11201600543YA - Field-effect transistor and method for producing field-effect transistor - Google Patents
Field-effect transistor and method for producing field-effect transistorInfo
- Publication number
- SG11201600543YA SG11201600543YA SG11201600543YA SG11201600543YA SG11201600543YA SG 11201600543Y A SG11201600543Y A SG 11201600543YA SG 11201600543Y A SG11201600543Y A SG 11201600543YA SG 11201600543Y A SG11201600543Y A SG 11201600543YA SG 11201600543Y A SG11201600543Y A SG 11201600543YA
- Authority
- SG
- Singapore
- Prior art keywords
- effect transistor
- field
- producing
- producing field
- transistor
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013159290 | 2013-07-31 | ||
JP2014035430A JP6264090B2 (ja) | 2013-07-31 | 2014-02-26 | 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法 |
PCT/JP2014/070289 WO2015016333A1 (en) | 2013-07-31 | 2014-07-25 | Field-effect transistor and method for producing field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201600543YA true SG11201600543YA (en) | 2016-02-26 |
Family
ID=52431857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201600543YA SG11201600543YA (en) | 2013-07-31 | 2014-07-25 | Field-effect transistor and method for producing field-effect transistor |
Country Status (10)
Country | Link |
---|---|
US (1) | US10672914B2 (ko) |
EP (1) | EP3028298A4 (ko) |
JP (1) | JP6264090B2 (ko) |
KR (1) | KR101841855B1 (ko) |
CN (2) | CN105431930A (ko) |
BR (1) | BR112016002017A2 (ko) |
RU (1) | RU2631405C2 (ko) |
SG (1) | SG11201600543YA (ko) |
TW (1) | TWI565072B (ko) |
WO (1) | WO2015016333A1 (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104934330A (zh) * | 2015-05-08 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
EP3125296B1 (en) * | 2015-07-30 | 2020-06-10 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
JP6607013B2 (ja) | 2015-12-08 | 2019-11-20 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP2017105013A (ja) | 2015-12-08 | 2017-06-15 | 株式会社リコー | ガスバリア性積層体、半導体装置、表示素子、表示装置、システム |
JP6862805B2 (ja) * | 2015-12-08 | 2021-04-21 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
US10600916B2 (en) | 2015-12-08 | 2020-03-24 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
US10170635B2 (en) | 2015-12-09 | 2019-01-01 | Ricoh Company, Ltd. | Semiconductor device, display device, display apparatus, and system |
JP6907512B2 (ja) * | 2015-12-15 | 2021-07-21 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
JP6665536B2 (ja) | 2016-01-12 | 2020-03-13 | 株式会社リコー | 酸化物半導体 |
SG11201806226WA (en) | 2016-02-01 | 2018-08-30 | Ricoh Co Ltd | Field effect transistor, method for manufacturing same, display element, display device, and system |
JP6701835B2 (ja) | 2016-03-11 | 2020-05-27 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
EP3432349A4 (en) | 2016-03-18 | 2019-03-20 | Ricoh Company, Ltd. | METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR |
US10818705B2 (en) | 2016-03-18 | 2020-10-27 | Ricoh Company, Ltd. | Method for manufacturing a field effect transistor, method for manufacturing a volatile semiconductor memory element, method for manufacturing a non-volatile semiconductor memory element, method for manufacturing a display element, method for manufacturing an image display device, and method for manufacturing a system |
EP3432363A4 (en) * | 2016-03-18 | 2019-03-27 | Ricoh Company, Ltd. | FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM |
WO2018016456A1 (en) | 2016-07-20 | 2018-01-25 | Ricoh Company, Ltd. | Field-effect transistor, method for producing the same, display element, image display device, and system |
JP2018022879A (ja) | 2016-07-20 | 2018-02-08 | 株式会社リコー | 電界効果型トランジスタ、及びその製造方法、並びに表示素子、画像表示装置、及びシステム |
JP2018157206A (ja) * | 2017-03-17 | 2018-10-04 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
CN107634034A (zh) * | 2017-09-15 | 2018-01-26 | 惠科股份有限公司 | 主动阵列开关的制造方法 |
CN208046475U (zh) * | 2017-11-16 | 2018-11-02 | 广州擎天实业有限公司 | 一种高导热大功率同步整流模块 |
US10688811B2 (en) | 2018-02-27 | 2020-06-23 | Ricoh Company, Ltd. | Air blower, drying device, liquid discharge apparatus, and treatment-liquid application device |
JP6986231B2 (ja) | 2018-03-16 | 2021-12-22 | 株式会社リコー | 塗布装置及び画像形成システム |
US11426818B2 (en) | 2018-08-10 | 2022-08-30 | The Research Foundation for the State University | Additive manufacturing processes and additively manufactured products |
JP7135682B2 (ja) | 2018-09-28 | 2022-09-13 | 株式会社リコー | 給送装置、画像形成装置及び画像形成システム |
CN109282924B (zh) * | 2018-11-16 | 2020-12-29 | 东南大学 | 一种压力传感器及其制备方法 |
JP7326795B2 (ja) | 2019-03-20 | 2023-08-16 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
CN111129083A (zh) * | 2019-12-11 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | 显示面板的制造方法及显示面板 |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5118811B2 (ko) | 1972-08-01 | 1976-06-12 | ||
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
KR100647660B1 (ko) * | 2004-11-19 | 2006-11-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 채용한 평판표시장치 |
KR100637204B1 (ko) * | 2005-01-15 | 2006-10-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 구비한 평판 표시장치 |
KR100637210B1 (ko) * | 2005-01-28 | 2006-10-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 구비한 평판표시 장치 |
JP4880951B2 (ja) * | 2005-09-06 | 2012-02-22 | キヤノン株式会社 | 半導体素子、薄膜トランジスタ、及び薄膜ダイオード |
KR100708720B1 (ko) * | 2005-10-19 | 2007-04-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치 |
KR100719566B1 (ko) * | 2005-10-22 | 2007-05-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 및 이를 구비한 평판 표시 장치 |
JP4793679B2 (ja) | 2005-11-10 | 2011-10-12 | 富士電機株式会社 | 薄膜トランジスタ |
JP5376750B2 (ja) * | 2005-11-18 | 2013-12-25 | 出光興産株式会社 | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル |
US8129714B2 (en) * | 2007-02-16 | 2012-03-06 | Idemitsu Kosan Co., Ltd. | Semiconductor, semiconductor device, complementary transistor circuit device |
JP2008270734A (ja) * | 2007-03-23 | 2008-11-06 | Sumitomo Chemical Co Ltd | 有機電界効果トランジスタ |
JP2010103451A (ja) * | 2007-11-26 | 2010-05-06 | Fujifilm Corp | 薄膜電界効果型トランジスタおよびそれを用いた電界発光装置 |
JPWO2010010766A1 (ja) * | 2008-07-25 | 2012-01-05 | 日本電気株式会社 | 電界効果型トランジスタおよび回路装置 |
TWI469354B (zh) * | 2008-07-31 | 2015-01-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
TWI508282B (zh) | 2008-08-08 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP5602390B2 (ja) | 2008-08-19 | 2014-10-08 | 富士フイルム株式会社 | 薄膜トランジスタ、アクティブマトリクス基板、及び撮像装置 |
JP5644071B2 (ja) | 2008-08-20 | 2014-12-24 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置及びシステム |
KR20100023151A (ko) * | 2008-08-21 | 2010-03-04 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터 및 그 제조방법 |
JP5258467B2 (ja) * | 2008-09-11 | 2013-08-07 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
JP5552753B2 (ja) * | 2008-10-08 | 2014-07-16 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
JP2010283190A (ja) | 2009-06-05 | 2010-12-16 | Konica Minolta Holdings Inc | 薄膜トランジスタ、及びその製造方法 |
JP2011009619A (ja) * | 2009-06-29 | 2011-01-13 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
JP5604081B2 (ja) * | 2009-11-11 | 2014-10-08 | 出光興産株式会社 | 酸化物半導体を用いた、高移動度の電界効果型トランジスタ |
KR101826832B1 (ko) | 2009-11-13 | 2018-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
KR101800854B1 (ko) * | 2009-11-20 | 2017-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
KR101800852B1 (ko) * | 2009-11-20 | 2017-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20120099475A (ko) * | 2009-12-04 | 2012-09-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR102026603B1 (ko) * | 2010-02-05 | 2019-10-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8283469B2 (en) * | 2010-03-24 | 2012-10-09 | National Tsing Hua University | Perylene diimide derivative and organic semiconductor element using the same material |
KR101271827B1 (ko) * | 2010-07-22 | 2013-06-07 | 포항공과대학교 산학협력단 | 탄소 박막 제조 방법 |
KR101774256B1 (ko) * | 2010-11-15 | 2017-09-05 | 삼성디스플레이 주식회사 | 산화물 반도체 박막 트랜지스터 및 그 제조 방법 |
JP5259683B2 (ja) | 2010-11-19 | 2013-08-07 | 株式会社東芝 | サーバ装置及びプログラム |
US8691621B1 (en) * | 2010-12-14 | 2014-04-08 | Sharp Laboratories Of America, Inc. | Thiol bond formation concurrent with silver nanoparticle ink thermal treatment |
US9202822B2 (en) * | 2010-12-17 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2012216780A (ja) * | 2011-03-31 | 2012-11-08 | Ricoh Co Ltd | p型酸化物、p型酸化物製造用組成物、p型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム |
US9762246B2 (en) | 2011-05-20 | 2017-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a storage circuit having an oxide semiconductor |
KR101237351B1 (ko) * | 2011-05-27 | 2013-03-04 | 포항공과대학교 산학협력단 | 전극 및 이를 포함한 전자 소자 |
KR101302786B1 (ko) * | 2011-05-27 | 2013-09-03 | 포항공과대학교 산학협력단 | 높은 일함수를 가지는 고분자 전극을 채용한 단순화된 유기 전자 소자 |
US8679905B2 (en) * | 2011-06-08 | 2014-03-25 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts |
JP5965107B2 (ja) | 2011-06-13 | 2016-08-03 | 出光興産株式会社 | 薄膜トランジスタ |
CN102842491B (zh) * | 2011-06-24 | 2016-10-19 | 联华电子股份有限公司 | 金属栅极的制作方法 |
CN103036643B (zh) * | 2011-09-30 | 2018-03-06 | 株式会社Ntt都科摩 | 小区间干扰消除方法、中继节点和基站 |
JP5783094B2 (ja) * | 2011-11-30 | 2015-09-24 | 株式会社リコー | p型酸化物、p型酸化物製造用組成物、p型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム |
US8969867B2 (en) * | 2012-01-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPWO2013108630A1 (ja) * | 2012-01-18 | 2015-05-11 | 出光興産株式会社 | 電界効果型トランジスタ |
US10005879B2 (en) * | 2012-02-03 | 2018-06-26 | Basf Se | Method for producing an organic semiconductor device |
US20140027762A1 (en) * | 2012-07-27 | 2014-01-30 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
US20140183457A1 (en) * | 2013-01-03 | 2014-07-03 | Lisa H. Stecker | Transistor with Organic Semiconductor Interface |
-
2014
- 2014-02-26 JP JP2014035430A patent/JP6264090B2/ja active Active
- 2014-07-25 BR BR112016002017A patent/BR112016002017A2/pt not_active Application Discontinuation
- 2014-07-25 CN CN201480043179.7A patent/CN105431930A/zh active Pending
- 2014-07-25 US US14/908,599 patent/US10672914B2/en active Active
- 2014-07-25 SG SG11201600543YA patent/SG11201600543YA/en unknown
- 2014-07-25 WO PCT/JP2014/070289 patent/WO2015016333A1/en active Application Filing
- 2014-07-25 KR KR1020167005170A patent/KR101841855B1/ko active IP Right Grant
- 2014-07-25 EP EP14831997.3A patent/EP3028298A4/en not_active Withdrawn
- 2014-07-25 RU RU2016106926A patent/RU2631405C2/ru active
- 2014-07-25 CN CN201811116958.1A patent/CN109216443B/zh active Active
- 2014-07-29 TW TW103125875A patent/TWI565072B/zh active
Also Published As
Publication number | Publication date |
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TW201511286A (zh) | 2015-03-16 |
CN109216443B (zh) | 2022-05-17 |
JP6264090B2 (ja) | 2018-01-24 |
RU2631405C2 (ru) | 2017-09-21 |
KR20160039656A (ko) | 2016-04-11 |
BR112016002017A2 (pt) | 2017-08-01 |
RU2016106926A (ru) | 2017-08-31 |
US10672914B2 (en) | 2020-06-02 |
KR101841855B1 (ko) | 2018-03-23 |
US20160190329A1 (en) | 2016-06-30 |
EP3028298A4 (en) | 2016-08-03 |
JP2015046568A (ja) | 2015-03-12 |
TWI565072B (zh) | 2017-01-01 |
EP3028298A1 (en) | 2016-06-08 |
WO2015016333A1 (en) | 2015-02-05 |
CN105431930A (zh) | 2016-03-23 |
CN109216443A (zh) | 2019-01-15 |
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