HK1221820A1 - 晶體管 - Google Patents

晶體管

Info

Publication number
HK1221820A1
HK1221820A1 HK16109839.8A HK16109839A HK1221820A1 HK 1221820 A1 HK1221820 A1 HK 1221820A1 HK 16109839 A HK16109839 A HK 16109839A HK 1221820 A1 HK1221820 A1 HK 1221820A1
Authority
HK
Hong Kong
Prior art keywords
transistor
Prior art date
Application number
HK16109839.8A
Other languages
English (en)
Inventor
Takafumi Matsumoto
Junichi Takeya
Original Assignee
Toppan Forms Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Forms Co Ltd filed Critical Toppan Forms Co Ltd
Publication of HK1221820A1 publication Critical patent/HK1221820A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
HK16109839.8A 2013-07-23 2016-08-17 晶體管 HK1221820A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013152669 2013-07-23
JP2014055595 2014-03-18
PCT/JP2014/068316 WO2015012107A1 (ja) 2013-07-23 2014-07-09 トランジスタ

Publications (1)

Publication Number Publication Date
HK1221820A1 true HK1221820A1 (zh) 2017-06-09

Family

ID=52393155

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16109839.8A HK1221820A1 (zh) 2013-07-23 2016-08-17 晶體管

Country Status (6)

Country Link
US (1) US10074818B2 (zh)
JP (2) JP6225992B2 (zh)
CN (1) CN105393361B (zh)
HK (1) HK1221820A1 (zh)
TW (1) TW201515115A (zh)
WO (1) WO2015012107A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107484436B (zh) * 2015-02-04 2021-09-03 巴斯夫欧洲公司 具有低接触电阻的有机场效晶体管
JP6528270B2 (ja) * 2015-03-31 2019-06-12 トッパン・フォームズ株式会社 金属インク組成物及び配線板
CN113717300B (zh) 2017-03-31 2023-11-17 大金工业株式会社 含氟聚合物的制造方法、聚合用表面活性剂和表面活性剂的使用
EP3604274A4 (en) * 2017-03-31 2021-02-24 Daikin Industries, Ltd. SULPHONIC ACID, CARBOXYLIC ACID AND THEIR SALTS
JP7249001B2 (ja) * 2018-09-04 2023-03-30 国立大学法人 東京大学 有機半導体素子、歪みセンサ、振動センサ及び有機半導体素子の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347042A (ja) 2002-05-24 2003-12-05 Denso Corp 有機電子デバイス用の封止膜およびその製造方法
JP2004063975A (ja) 2002-07-31 2004-02-26 Mitsubishi Chemicals Corp 電界効果トランジスタ
EP1609191A1 (en) * 2003-03-31 2005-12-28 Canon Kabushiki Kaisha Organic thin film transistor and manufacturing method thereof
US7683195B2 (en) * 2005-07-04 2010-03-23 Osaka Industrial Promotional Organization Silver β-ketocarboxylate, material comprising the same for forming silver metal, and use thereof
US7563860B2 (en) * 2006-04-06 2009-07-21 Xerox Corporation Semiconductors and electronic devices generated therefrom
US8207525B2 (en) 2006-12-04 2012-06-26 Idemitsu Kosan Co., Ltd. Organic thin film transistor and organic thin film light emitting transistor
JP5530061B2 (ja) * 2007-11-01 2014-06-25 トッパン・フォームズ株式会社 インク、及び配線を形成する方法
JP5393988B2 (ja) * 2008-02-21 2014-01-22 トッパン・フォームズ株式会社 インク、及び配線を形成する方法
JP5540543B2 (ja) 2009-03-31 2014-07-02 大日本印刷株式会社 有機トランジスタの製造方法
JP5397921B2 (ja) 2009-10-02 2014-01-22 国立大学法人大阪大学 有機半導体膜の製造方法
JP2013040124A (ja) 2011-08-15 2013-02-28 Osaka Univ 自己組織化単分子膜形成用の化合物及びそれを用いた有機半導体素子

Also Published As

Publication number Publication date
TW201515115A (zh) 2015-04-16
JP6225992B2 (ja) 2017-11-08
JP2017183733A (ja) 2017-10-05
CN105393361B (zh) 2018-07-06
WO2015012107A1 (ja) 2015-01-29
JP6357726B2 (ja) 2018-07-18
US10074818B2 (en) 2018-09-11
US20160155969A1 (en) 2016-06-02
JPWO2015012107A1 (ja) 2017-03-02
CN105393361A (zh) 2016-03-09

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20230705