SG10202007863UA - Mask blank, transfer mask, and method of manufacturing semiconductor device - Google Patents
Mask blank, transfer mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG10202007863UA SG10202007863UA SG10202007863UA SG10202007863UA SG10202007863UA SG 10202007863U A SG10202007863U A SG 10202007863UA SG 10202007863U A SG10202007863U A SG 10202007863UA SG 10202007863U A SG10202007863U A SG 10202007863UA SG 10202007863U A SG10202007863U A SG 10202007863UA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor device
- manufacturing semiconductor
- transfer
- mask blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016165550 | 2016-08-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202007863UA true SG10202007863UA (en) | 2020-10-29 |
Family
ID=61246640
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202000604QA SG10202000604QA (en) | 2016-08-26 | 2017-08-02 | Mask blank, transfer mask, and method of manufacturing semiconductor device |
| SG11201901299SA SG11201901299SA (en) | 2016-08-26 | 2017-08-02 | Mask blank, transfer mask, and method of manufacturing semiconductor device |
| SG10202007863UA SG10202007863UA (en) | 2016-08-26 | 2017-08-02 | Mask blank, transfer mask, and method of manufacturing semiconductor device |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202000604QA SG10202000604QA (en) | 2016-08-26 | 2017-08-02 | Mask blank, transfer mask, and method of manufacturing semiconductor device |
| SG11201901299SA SG11201901299SA (en) | 2016-08-26 | 2017-08-02 | Mask blank, transfer mask, and method of manufacturing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US11112690B2 (ja) |
| JP (3) | JP6297766B1 (ja) |
| KR (3) | KR102292434B1 (ja) |
| CN (3) | CN109643058B (ja) |
| SG (3) | SG10202000604QA (ja) |
| TW (3) | TWI685880B (ja) |
| WO (1) | WO2018037863A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6743679B2 (ja) * | 2016-03-02 | 2020-08-19 | 信越化学工業株式会社 | フォトマスクブランク、及びフォトマスクの製造方法 |
| US11112690B2 (en) * | 2016-08-26 | 2021-09-07 | Hoya Corporation | Mask blank, transfer mask, and method for manufacturing semiconductor device |
| JP6932552B2 (ja) * | 2017-05-31 | 2021-09-08 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP2020013100A (ja) | 2018-07-13 | 2020-01-23 | エスアンドエス テック カンパニー リミテッド | ブランクマスク、フォトマスク及びその製造方法 |
| KR20200055871A (ko) * | 2018-11-13 | 2020-05-22 | 삼성디스플레이 주식회사 | 기판 식각 방법 |
| JP7331793B2 (ja) * | 2020-06-30 | 2023-08-23 | 信越化学工業株式会社 | フォトマスクの製造方法及びフォトマスクブランク |
| KR102624206B1 (ko) * | 2021-02-25 | 2024-01-15 | 인하대학교 산학협력단 | ArF 위상반전 블랭크 마스크용 차광막 제조 방법 및 장치 |
| TWI814573B (zh) * | 2022-09-07 | 2023-09-01 | 致伸科技股份有限公司 | 具有光線調整結構之鍵盤裝置 |
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| JPH02124572A (ja) * | 1988-11-02 | 1990-05-11 | Daicel Chem Ind Ltd | 透明樹脂薄膜 |
| JPH08115912A (ja) * | 1994-10-14 | 1996-05-07 | Nippon Telegr & Teleph Corp <Ntt> | 窒化ケイ素薄膜の作製方法 |
| JPH11184067A (ja) * | 1997-12-19 | 1999-07-09 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク |
| US7011910B2 (en) * | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| US20040063001A1 (en) * | 2002-09-30 | 2004-04-01 | Wu Wei E. | Method of making an integrated circuit using a photomask having a dual antireflective coating |
| EP1783546B1 (en) * | 2004-06-16 | 2014-03-05 | Hoya Corporation | Semitransmitting film, photomask blank and photomask |
| EP1746460B1 (en) | 2005-07-21 | 2011-04-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and fabrication method thereof |
| JP4933754B2 (ja) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP4883278B2 (ja) * | 2006-03-10 | 2012-02-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
| JP2009122566A (ja) * | 2007-11-19 | 2009-06-04 | Dainippon Printing Co Ltd | 低反射型フォトマスクブランクスおよびフォトマスク |
| JP4845978B2 (ja) * | 2008-02-27 | 2011-12-28 | Ｈｏｙａ株式会社 | フォトマスクブランクおよびフォトマスク並びにフォトマスクの製造方法 |
| KR101584383B1 (ko) * | 2008-03-31 | 2016-01-11 | 호야 가부시키가이샤 | 포토마스크 블랭크, 포토마스크 및 포토마스크 블랭크의 제조 방법 |
| KR102198731B1 (ko) * | 2008-06-25 | 2021-01-05 | 호야 가부시키가이샤 | 위상 시프트 마스크 블랭크 및 위상 시프트 마스크 |
| JP4849276B2 (ja) * | 2008-08-15 | 2012-01-11 | 信越化学工業株式会社 | グレートーンマスクブランク、グレートーンマスク、及び製品加工標識又は製品情報標識の形成方法 |
| US8431290B2 (en) * | 2008-10-29 | 2013-04-30 | Hoya Corporation | Photomask blank, photomask, and methods of manufacturing the same |
| US20100119958A1 (en) * | 2008-11-11 | 2010-05-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask blank, mask formed from the blank, and method of forming a mask |
| KR101384111B1 (ko) * | 2009-01-09 | 2014-04-10 | 주식회사 에스앤에스텍 | 블랭크 마스크, 이를 이용하는 포토 마스크 및 이를 제조하는 방법 |
| JP4853684B2 (ja) | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| WO2010113475A1 (ja) * | 2009-03-31 | 2010-10-07 | Hoya株式会社 | マスクブランクおよび転写用マスク |
| KR101699995B1 (ko) * | 2009-06-18 | 2017-01-26 | 호야 가부시키가이샤 | 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법 |
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| JP5682493B2 (ja) * | 2010-08-04 | 2015-03-11 | 信越化学工業株式会社 | バイナリーフォトマスクブランク及びバイナリーフォトマスクの製造方法 |
| JP5154626B2 (ja) * | 2010-09-30 | 2013-02-27 | Ｈｏｙａ株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法 |
| JP5653888B2 (ja) * | 2010-12-17 | 2015-01-14 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| JP6058318B2 (ja) * | 2011-09-14 | 2017-01-11 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法 |
| JP4930737B2 (ja) * | 2011-09-21 | 2012-05-16 | 信越化学工業株式会社 | フォトマスクブランク及びバイナリーマスクの製造方法 |
| JP6012984B2 (ja) * | 2012-02-28 | 2016-10-25 | Hoya株式会社 | 転写用マスクの製造方法及びマスクブランクの製造方法 |
| KR102380131B1 (ko) * | 2013-08-21 | 2022-03-30 | 다이니폰 인사츠 가부시키가이샤 | 마스크 블랭크, 네거티브형 레지스트막 부착 마스크 블랭크, 위상 시프트 마스크, 및 그것을 사용하는 패턴 형성체의 제조 방법 |
| JP6544943B2 (ja) * | 2014-03-28 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法 |
| JP6292581B2 (ja) | 2014-03-30 | 2018-03-14 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
| JP6150299B2 (ja) | 2014-03-30 | 2017-06-21 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
| JP6313678B2 (ja) * | 2014-07-14 | 2018-04-18 | Hoya株式会社 | マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| JP6608613B2 (ja) * | 2015-05-12 | 2019-11-20 | Ｈｏｙａ株式会社 | 位相シフトマスクブランク、位相シフトマスクの製造方法及び半導体装置の製造方法 |
| US10678125B2 (en) * | 2016-03-02 | 2020-06-09 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing photomask |
| US11112690B2 (en) * | 2016-08-26 | 2021-09-07 | Hoya Corporation | Mask blank, transfer mask, and method for manufacturing semiconductor device |
-
2017
- 2017-08-02 US US16/327,172 patent/US11112690B2/en active Active
- 2017-08-02 CN CN201780050886.2A patent/CN109643058B/zh active Active
- 2017-08-02 SG SG10202000604QA patent/SG10202000604QA/en unknown
- 2017-08-02 CN CN202210271059.9A patent/CN114609856A/zh active Pending
- 2017-08-02 KR KR1020217022869A patent/KR102292434B1/ko active IP Right Grant
- 2017-08-02 SG SG11201901299SA patent/SG11201901299SA/en unknown
- 2017-08-02 KR KR1020217014482A patent/KR102281354B1/ko active IP Right Grant
- 2017-08-02 WO PCT/JP2017/028043 patent/WO2018037863A1/ja active Application Filing
- 2017-08-02 SG SG10202007863UA patent/SG10202007863UA/en unknown
- 2017-08-02 CN CN202210271072.4A patent/CN114675486A/zh active Pending
- 2017-08-02 JP JP2017562373A patent/JP6297766B1/ja active Active
- 2017-08-02 KR KR1020197002746A patent/KR102254035B1/ko active IP Right Grant
- 2017-08-16 TW TW106127709A patent/TWI685880B/zh active
- 2017-08-16 TW TW109100713A patent/TWI727603B/zh active
- 2017-08-16 TW TW110112060A patent/TWI765636B/zh active
-
2018
- 2018-02-15 JP JP2018024781A patent/JP6495496B2/ja active Active
-
2019
- 2019-03-01 JP JP2019037473A patent/JP6636664B2/ja active Active
-
2021
- 2021-08-09 US US17/397,642 patent/US11543744B2/en active Active
-
2022
- 2022-12-02 US US18/073,794 patent/US12013631B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW202020938A (zh) | 2020-06-01 |
| TWI765636B (zh) | 2022-05-21 |
| CN109643058A (zh) | 2019-04-16 |
| JP6495496B2 (ja) | 2019-04-03 |
| US20230099176A1 (en) | 2023-03-30 |
| JP2019105858A (ja) | 2019-06-27 |
| US20190204728A1 (en) | 2019-07-04 |
| WO2018037863A1 (ja) | 2018-03-01 |
| TWI685880B (zh) | 2020-02-21 |
| JP2018109775A (ja) | 2018-07-12 |
| CN114675486A (zh) | 2022-06-28 |
| CN109643058B (zh) | 2022-03-29 |
| SG11201901299SA (en) | 2019-03-28 |
| JP6636664B2 (ja) | 2020-01-29 |
| TW202129707A (zh) | 2021-08-01 |
| KR102281354B1 (ko) | 2021-07-26 |
| KR20210093383A (ko) | 2021-07-27 |
| US20210373432A1 (en) | 2021-12-02 |
| KR102292434B1 (ko) | 2021-08-20 |
| KR102254035B1 (ko) | 2021-05-20 |
| CN114609856A (zh) | 2022-06-10 |
| TW201820405A (zh) | 2018-06-01 |
| US12013631B2 (en) | 2024-06-18 |
| KR20210059016A (ko) | 2021-05-24 |
| US11543744B2 (en) | 2023-01-03 |
| JP6297766B1 (ja) | 2018-03-20 |
| KR20190021454A (ko) | 2019-03-05 |
| JPWO2018037863A1 (ja) | 2018-08-23 |
| SG10202000604QA (en) | 2020-03-30 |
| TWI727603B (zh) | 2021-05-11 |
| US11112690B2 (en) | 2021-09-07 |
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