SG10201905122TA - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
SG10201905122TA
SG10201905122TA SG10201905122TA SG10201905122TA SG10201905122TA SG 10201905122T A SG10201905122T A SG 10201905122TA SG 10201905122T A SG10201905122T A SG 10201905122TA SG 10201905122T A SG10201905122T A SG 10201905122TA SG 10201905122T A SG10201905122T A SG 10201905122TA
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
SG10201905122TA
Other languages
English (en)
Inventor
CHOO Seongmin
KWON Hyukwoo
KIM Jangseop
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201905122TA publication Critical patent/SG10201905122TA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • General Engineering & Computer Science (AREA)
SG10201905122TA 2018-07-02 2019-06-06 Semiconductor memory device SG10201905122TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180076426A KR102557019B1 (ko) 2018-07-02 2018-07-02 반도체 메모리 소자

Publications (1)

Publication Number Publication Date
SG10201905122TA true SG10201905122TA (en) 2020-02-27

Family

ID=69008301

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201905122TA SG10201905122TA (en) 2018-07-02 2019-06-06 Semiconductor memory device

Country Status (5)

Country Link
US (1) US10998318B2 (ko)
JP (1) JP6943922B2 (ko)
KR (2) KR102557019B1 (ko)
CN (2) CN110676255B (ko)
SG (1) SG10201905122TA (ko)

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* Cited by examiner, † Cited by third party
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KR102664275B1 (ko) * 2019-03-29 2024-05-09 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
TWI710110B (zh) * 2019-11-19 2020-11-11 華邦電子股份有限公司 電容器及其製造方法
US11723185B2 (en) 2020-08-13 2023-08-08 Changxin Memory Technologies, Inc. Capacitor structure, method for manufacturing same, and memory
CN115020408A (zh) * 2021-03-05 2022-09-06 长鑫存储技术有限公司 半导体结构及其形成方法
US20220285481A1 (en) * 2021-03-05 2022-09-08 Changxin Memory Technologies, Inc. Semiconductor structure and forming method thereof
CN116490060A (zh) * 2022-01-13 2023-07-25 长鑫存储技术有限公司 半导体结构及半导体结构的制造方法

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US6784479B2 (en) * 2002-06-05 2004-08-31 Samsung Electronics Co., Ltd. Multi-layer integrated circuit capacitor electrodes
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KR100948092B1 (ko) 2006-12-27 2010-03-16 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
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KR101776284B1 (ko) * 2011-03-03 2017-09-20 삼성전자주식회사 반도체 기억 소자의 제조 방법
JP2012221965A (ja) 2011-04-04 2012-11-12 Elpida Memory Inc 半導体記憶装置及びその製造方法
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KR101934037B1 (ko) * 2012-11-21 2018-12-31 삼성전자주식회사 서포터를 갖는 반도체 소자 및 그 형성 방법
KR102367394B1 (ko) * 2015-06-15 2022-02-25 삼성전자주식회사 캐패시터 구조체 및 이를 포함하는 반도체 소자
KR102279720B1 (ko) * 2015-06-24 2021-07-22 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20170011218A (ko) * 2015-07-22 2017-02-02 삼성전자주식회사 커패시터 구조물 및 이의 형성 방법, 및 상기 커패시터 구조물을 포함하는 반도체 장치
KR102414612B1 (ko) * 2015-10-13 2022-07-01 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR20170069347A (ko) * 2015-12-10 2017-06-21 삼성전자주식회사 반도체 장치의 제조 방법
KR102394250B1 (ko) * 2016-01-06 2022-05-03 삼성전자주식회사 반도체 장치 및 이의 제조 방법
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KR20180068584A (ko) * 2016-12-14 2018-06-22 삼성전자주식회사 반도체 소자
CN207517691U (zh) * 2017-12-07 2018-06-19 睿力集成电路有限公司 电容器阵列结构
CN110289258B (zh) * 2018-03-19 2021-12-21 联华电子股份有限公司 半导体结构

Also Published As

Publication number Publication date
US20200006345A1 (en) 2020-01-02
JP2020010031A (ja) 2020-01-16
US10998318B2 (en) 2021-05-04
KR20230109613A (ko) 2023-07-20
KR102557019B1 (ko) 2023-07-20
KR102652413B1 (ko) 2024-03-29
KR20200003532A (ko) 2020-01-10
CN110676255A (zh) 2020-01-10
CN117915660A (zh) 2024-04-19
JP6943922B2 (ja) 2021-10-06
CN110676255B (zh) 2024-01-19

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