SG10201903542TA - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SG10201903542TA
SG10201903542TA SG10201903542TA SG10201903542TA SG10201903542TA SG 10201903542T A SG10201903542T A SG 10201903542TA SG 10201903542T A SG10201903542T A SG 10201903542TA SG 10201903542T A SG10201903542T A SG 10201903542TA SG 10201903542T A SG10201903542T A SG 10201903542TA
Authority
SG
Singapore
Prior art keywords
circuit
semiconductor
switching element
power supply
supply voltage
Prior art date
Application number
SG10201903542TA
Other languages
English (en)
Inventor
Yutaka Shionoiri
Kosei Noda
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG10201903542TA publication Critical patent/SG10201903542TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
SG10201903542TA 2009-10-30 2010-10-06 Semiconductor device SG10201903542TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009250665 2009-10-30

Publications (1)

Publication Number Publication Date
SG10201903542TA true SG10201903542TA (en) 2019-05-30

Family

ID=43921812

Family Applications (3)

Application Number Title Priority Date Filing Date
SG2012013652A SG178895A1 (en) 2009-10-30 2010-10-06 Semiconductor device
SG10201903542TA SG10201903542TA (en) 2009-10-30 2010-10-06 Semiconductor device
SG10201406989QA SG10201406989QA (en) 2009-10-30 2010-10-06 Semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012013652A SG178895A1 (en) 2009-10-30 2010-10-06 Semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201406989QA SG10201406989QA (en) 2009-10-30 2010-10-06 Semiconductor device

Country Status (10)

Country Link
US (3) US20110101333A1 (zh)
EP (1) EP2494595A4 (zh)
JP (8) JP2011119671A (zh)
KR (6) KR102062077B1 (zh)
CN (1) CN102640279B (zh)
IN (1) IN2012DN03080A (zh)
MY (1) MY172111A (zh)
SG (3) SG178895A1 (zh)
TW (2) TWI570882B (zh)
WO (1) WO2011052386A1 (zh)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011070928A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20190018049A (ko) * 2010-03-08 2019-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102646592B (zh) * 2011-05-03 2014-12-03 京东方科技集团股份有限公司 薄膜场效应晶体管器件及其制备方法
WO2012157472A1 (en) * 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6091083B2 (ja) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20140086954A (ko) * 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8907392B2 (en) * 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US9859114B2 (en) * 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP6034048B2 (ja) * 2012-04-23 2016-11-30 株式会社半導体エネルギー研究所 表示装置、電子機器
JP6243136B2 (ja) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 スイッチングコンバータ
JP2014057296A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
TWI581404B (zh) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
JP2014057298A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US9034217B2 (en) * 2013-06-07 2015-05-19 Ngk Insulators, Ltd. Voltage nonlinear resistor
CN103474473B (zh) * 2013-09-10 2016-02-03 深圳市华星光电技术有限公司 一种薄膜晶体管开关及其制造方法
US9257290B2 (en) * 2013-12-25 2016-02-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Low temperature poly-silicon thin film transistor and manufacturing method thereof
US9443876B2 (en) * 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US10985196B2 (en) 2014-02-24 2021-04-20 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US9881986B2 (en) 2014-02-24 2018-01-30 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9721973B2 (en) 2014-02-24 2017-08-01 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
EP2911202B1 (en) 2014-02-24 2019-02-20 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911199B1 (en) 2014-02-24 2020-05-06 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
JP6150752B2 (ja) * 2014-03-14 2017-06-21 株式会社日本製鋼所 酸化物系半導体材料および半導体素子
DE112015001878B4 (de) * 2014-04-18 2021-09-09 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
JP6418794B2 (ja) * 2014-06-09 2018-11-07 東京エレクトロン株式会社 改質処理方法及び半導体装置の製造方法
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
JP2017162852A (ja) * 2016-03-07 2017-09-14 株式会社ジャパンディスプレイ 半導体装置および表示装置
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN106129122B (zh) * 2016-08-31 2018-12-11 京东方科技集团股份有限公司 氧化物薄膜晶体管及其制备方法、阵列基板、显示装置
JP6832656B2 (ja) * 2016-09-14 2021-02-24 株式会社ジャパンディスプレイ 半導体装置の製造方法
CN110476200B (zh) * 2017-03-29 2021-11-16 夏普株式会社 Tft基板、tft基板的制造方法、显示装置
US10340387B2 (en) * 2017-09-20 2019-07-02 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Low temperature poly-silicon thin film transistor, manufacturing method thereof, and array substrate
TWI677741B (zh) * 2018-11-12 2019-11-21 友達光電股份有限公司 顯示裝置
EP3745471A1 (en) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency
JP6861871B2 (ja) 2020-04-14 2021-04-21 株式会社半導体エネルギー研究所 表示装置
KR20220094259A (ko) * 2020-12-28 2022-07-06 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN113921048A (zh) * 2021-10-19 2022-01-11 吉林大学 基于二位晶体管存储器的可进行四进制逻辑运算的集成电路

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154549A (ja) * 1984-01-24 1985-08-14 Fujitsu Ltd 半導体装置の製造方法
JPH0792500A (ja) * 1993-06-29 1995-04-07 Toshiba Corp 半導体装置
JPH08264798A (ja) * 1995-03-23 1996-10-11 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置作製方法
US7348227B1 (en) * 1995-03-23 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP3633061B2 (ja) * 1995-10-19 2005-03-30 三菱電機株式会社 半導体集積回路装置
JP4086925B2 (ja) * 1996-12-27 2008-05-14 株式会社半導体エネルギー研究所 アクティブマトリクスディスプレイ
JPH11233789A (ja) * 1998-02-12 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2000243851A (ja) * 1999-02-17 2000-09-08 Hitachi Ltd 半導体集積回路装置
EP2256808A2 (en) * 1999-04-30 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method therof
TW567363B (en) * 1999-05-14 2003-12-21 Seiko Epson Corp Method for driving electrooptical device, drive circuit, electrooptical device, and electronic device
JP2001053599A (ja) * 1999-08-12 2001-02-23 Nec Corp 半導体集積回路
JP3735855B2 (ja) * 2000-02-17 2006-01-18 日本電気株式会社 半導体集積回路装置およびその駆動方法
JP4275336B2 (ja) * 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4736313B2 (ja) * 2002-09-10 2011-07-27 日本電気株式会社 薄膜半導体装置
US6821826B1 (en) * 2003-09-30 2004-11-23 International Business Machines Corporation Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
JP4045446B2 (ja) * 2004-02-12 2008-02-13 カシオ計算機株式会社 トランジスタアレイ及び画像処理装置
JP2006005116A (ja) * 2004-06-17 2006-01-05 Casio Comput Co Ltd 膜形成方法、半導体膜、及び積層絶縁膜
JP5053537B2 (ja) * 2004-11-10 2012-10-17 キヤノン株式会社 非晶質酸化物を利用した半導体デバイス
JP2006278621A (ja) * 2005-03-29 2006-10-12 Toppan Printing Co Ltd トランジスタ論理回路の製造方法
KR101219069B1 (ko) * 2005-05-30 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그것의 구동 방법
JP4842017B2 (ja) * 2005-05-30 2011-12-21 株式会社半導体エネルギー研究所 半導体装置
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5006598B2 (ja) * 2005-09-16 2012-08-22 キヤノン株式会社 電界効果型トランジスタ
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
EP1950177A4 (en) * 2005-11-18 2009-02-25 Idemitsu Kosan Co SEMICONDUCTOR THIN FILM, MANUFACTURING METHOD AND THIN FILM TRANSISTOR
TWI339442B (en) * 2005-12-09 2011-03-21 Samsung Mobile Display Co Ltd Flat panel display and method of fabricating the same
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
JP2007251100A (ja) * 2006-03-20 2007-09-27 Epson Imaging Devices Corp 電気光学装置、電子機器および半導体装置
JP2007286150A (ja) * 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法
JP2008053976A (ja) * 2006-08-23 2008-03-06 Toshiba Lsi System Support Kk 半導体装置
TWI749346B (zh) * 2006-09-29 2021-12-11 日商半導體能源研究所股份有限公司 顯示裝置和電子裝置
KR20080050690A (ko) * 2006-12-04 2008-06-10 삼성전자주식회사 유기 발광 표시 장치의 제조 방법
JP2008147418A (ja) * 2006-12-11 2008-06-26 Hitachi Ltd 薄膜トランジスタ装置、画像表示装置およびその製造方法
KR20080073944A (ko) * 2007-02-07 2008-08-12 엘지전자 주식회사 하이브리드 유기 전계 발광 소자 및 그 제조방법
JP2008235871A (ja) * 2007-02-20 2008-10-02 Canon Inc 薄膜トランジスタの形成方法及び表示装置
JPWO2008136505A1 (ja) * 2007-05-08 2010-07-29 出光興産株式会社 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法
US8803781B2 (en) * 2007-05-18 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5037221B2 (ja) * 2007-05-18 2012-09-26 株式会社半導体エネルギー研究所 液晶表示装置及び電子機器
JP5242083B2 (ja) * 2007-06-13 2013-07-24 出光興産株式会社 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US8033273B2 (en) * 2007-07-02 2011-10-11 Denso Corporation Plasma ignition system
JP2009076879A (ja) * 2007-08-24 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置
US8232598B2 (en) * 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
TW200921226A (en) * 2007-11-06 2009-05-16 Wintek Corp Panel structure and manufacture method thereof
JP2009130209A (ja) * 2007-11-26 2009-06-11 Fujifilm Corp 放射線撮像素子
JP5366517B2 (ja) * 2007-12-03 2013-12-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5430846B2 (ja) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100936874B1 (ko) * 2007-12-18 2010-01-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법
JP2009158528A (ja) * 2007-12-25 2009-07-16 Sharp Corp 半導体装置
JP5121478B2 (ja) * 2008-01-31 2013-01-16 株式会社ジャパンディスプレイウェスト 光センサー素子、撮像装置、電子機器、およびメモリー素子
JP5305696B2 (ja) * 2008-03-06 2013-10-02 キヤノン株式会社 半導体素子の処理方法
JP2009250665A (ja) 2008-04-02 2009-10-29 Nikon Corp 計測装置
US20100141230A1 (en) * 2008-07-17 2010-06-10 Exar Corporation Self-tuning sensorless digital current-mode controller with accurate current sharing for multiphase dc-dc converters
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
TW202420563A (zh) * 2009-08-07 2024-05-16 日商半導體能源研究所股份有限公司 半導體裝置
KR101963300B1 (ko) * 2009-12-04 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20240129225A (ko) * 2009-12-04 2024-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089847A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
JP6298662B2 (ja) * 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
TWI724231B (zh) * 2016-09-09 2021-04-11 日商半導體能源硏究所股份有限公司 記憶體裝置及其工作方法、半導體裝置、電子構件以及電子裝置

Also Published As

Publication number Publication date
JP6840810B2 (ja) 2021-03-10
KR20170118951A (ko) 2017-10-25
WO2011052386A1 (en) 2011-05-05
CN102640279A (zh) 2012-08-15
JP2011119671A (ja) 2011-06-16
KR101930730B1 (ko) 2018-12-19
KR20180135995A (ko) 2018-12-21
EP2494595A4 (en) 2015-08-26
TW201135908A (en) 2011-10-16
KR20120091239A (ko) 2012-08-17
KR20210148418A (ko) 2021-12-07
SG10201406989QA (en) 2014-12-30
JP2022141651A (ja) 2022-09-29
TWI570882B (zh) 2017-02-11
JP2017063209A (ja) 2017-03-30
JP2024037749A (ja) 2024-03-19
TWI603458B (zh) 2017-10-21
EP2494595A1 (en) 2012-09-05
KR102473794B1 (ko) 2022-12-06
US20220093452A1 (en) 2022-03-24
JP2021103300A (ja) 2021-07-15
KR20220166361A (ko) 2022-12-16
SG178895A1 (en) 2012-04-27
MY172111A (en) 2019-11-14
IN2012DN03080A (zh) 2015-07-31
KR20190143477A (ko) 2019-12-30
JP6280974B2 (ja) 2018-02-14
TW201601285A (zh) 2016-01-01
KR102334468B1 (ko) 2021-12-06
JP2018085534A (ja) 2018-05-31
US20180174891A1 (en) 2018-06-21
US20110101333A1 (en) 2011-05-05
CN102640279B (zh) 2015-06-17
KR102062077B1 (ko) 2020-01-03
JP2015207769A (ja) 2015-11-19
JP2020017748A (ja) 2020-01-30

Similar Documents

Publication Publication Date Title
SG10201903542TA (en) Semiconductor device
EP2517355A4 (en) STORAGE DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
MY158956A (en) Logic circuit and semiconductor device
JP2011119671A5 (zh)
MY160598A (en) Semiconductor device
EP2518767A3 (en) Semiconductor device
EP2519972A4 (en) MEMORY DEVICE AND SEMICONDUCTOR DEVICE
JP2014007386A5 (ja) 半導体装置
WO2008147801A3 (en) Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
TW200739582A (en) Semiconductor device with inner voltage generation circuit
JP2013214296A5 (zh)
WO2010062727A3 (en) Low drop out (ldo) bypass voltage regulator
EP2526619A4 (en) SIGNAL PROCESSING CIRCUIT AND ITS CONTROL METHOD
EP2630714A4 (en) LITHIUM BATTERY PROTECTION CIRCUITS
TW200637096A (en) Power clamp circuit and semiconductor device
WO2010104556A3 (en) Power latch
MX338194B (es) Un dispositivo de control electrico programable.
WO2013002959A3 (en) Low-power, low-latency power-gate apparatus and method
WO2013011289A3 (en) Switching circuits
JP2011060876A5 (ja) 半導体装置
GB2462935B (en) Lamp
WO2012162031A3 (en) Devices and systems including enabling circuits
TW200744101A (en) Semiconductor memory device with reduced current consumption
JP2009165114A5 (zh)
EP2133917A3 (en) Semiconductor integrated circuit comprising mutli-threshold CMOS (MTCMOS) and non-MTCMOS circuit cells in the same circuit block