SG10201805079YA - Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method - Google Patents

Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method

Info

Publication number
SG10201805079YA
SG10201805079YA SG10201805079YA SG10201805079YA SG10201805079YA SG 10201805079Y A SG10201805079Y A SG 10201805079YA SG 10201805079Y A SG10201805079Y A SG 10201805079YA SG 10201805079Y A SG10201805079Y A SG 10201805079YA SG 10201805079Y A SG10201805079Y A SG 10201805079YA
Authority
SG
Singapore
Prior art keywords
coated substrate
conductive film
mask blank
film coated
reflective mask
Prior art date
Application number
SG10201805079YA
Other languages
English (en)
Inventor
Kazuhiro Hamamoto
Yoichi Usui
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG10201805079YA publication Critical patent/SG10201805079YA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/023Optical properties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/7065Defects, e.g. optical inspection of patterned layer for defects
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/40Properties of the layers or laminate having particular optical properties
    • B32B2307/416Reflective
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00Optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
SG10201805079YA 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method SG10201805079YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013202494 2013-09-27

Publications (1)

Publication Number Publication Date
SG10201805079YA true SG10201805079YA (en) 2018-07-30

Family

ID=52743232

Family Applications (3)

Application Number Title Priority Date Filing Date
SG11201509897WA SG11201509897WA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method
SG10201805079YA SG10201805079YA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method
SG10201911502WA SG10201911502WA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201509897WA SG11201509897WA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201911502WA SG10201911502WA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method

Country Status (6)

Country Link
US (3) US9746762B2 (enExample)
JP (3) JP5729847B2 (enExample)
KR (3) KR101877896B1 (enExample)
SG (3) SG11201509897WA (enExample)
TW (3) TWI652542B (enExample)
WO (1) WO2015046095A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6314019B2 (ja) * 2014-03-31 2018-04-18 ニッタ・ハース株式会社 半導体基板の研磨方法
JP6069609B2 (ja) * 2015-03-26 2017-02-01 株式会社リガク 二重湾曲x線集光素子およびその構成体、二重湾曲x線分光素子およびその構成体の製造方法
WO2016204051A1 (ja) 2015-06-17 2016-12-22 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6873758B2 (ja) * 2016-03-28 2021-05-19 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法
JP6792901B2 (ja) * 2016-03-31 2020-12-02 Hoya株式会社 反射型マスクブランクの製造方法、反射型マスクブランク、反射型マスクの製造方法、反射型マスク、及び半導体装置の製造方法
US9870612B2 (en) * 2016-06-06 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for repairing a mask
WO2018074512A1 (ja) * 2016-10-21 2018-04-26 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP6475400B2 (ja) * 2017-01-17 2019-02-27 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
SG10201911903XA (en) * 2017-02-27 2020-02-27 Hoya Corp Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
CN110785704A (zh) * 2017-07-05 2020-02-11 凸版印刷株式会社 反射型光掩模坯以及反射型光掩模
WO2019225736A1 (ja) * 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7492456B2 (ja) * 2018-11-07 2024-05-29 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
DE102019100839B4 (de) * 2019-01-14 2024-11-14 Advanced Mask Technology Center Gmbh & Co. Kg Fotomaskenanordnung mit reflektierender fotomaske und verfahren zum herstellen einer reflektierenden fotomaske
JP7263872B2 (ja) 2019-03-25 2023-04-25 株式会社デンソー ドリルの製造方法
JP7350571B2 (ja) * 2019-08-30 2023-09-26 Hoya株式会社 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
JP7271760B2 (ja) * 2020-03-27 2023-05-11 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR102464780B1 (ko) * 2020-09-02 2022-11-09 주식회사 에스앤에스텍 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크
JP7420027B2 (ja) * 2020-09-10 2024-01-23 信越化学工業株式会社 Euvマスクブランク用多層反射膜付き基板、その製造方法及びeuvマスクブランク
US20220137500A1 (en) * 2020-10-30 2022-05-05 AGC Inc. Glass substrate for euvl, and mask blank for euvl
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
KR102645567B1 (ko) * 2021-02-16 2024-03-11 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그것들의 제조 방법
JP7589633B2 (ja) * 2021-04-19 2024-11-26 Agc株式会社 多層反射膜付き基板の検査方法、及び反射型マスクブランクの製造方法
US20230305385A1 (en) * 2022-03-25 2023-09-28 Photronics, Inc. System, method and program product for photomask surface treatment

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0696434A (ja) * 1992-07-31 1994-04-08 Sony Corp 磁気記録媒体及び磁気記録媒体の評価方法
JPH0785463A (ja) * 1993-09-20 1995-03-31 A G Technol Kk 磁気ディスク
JPH10283626A (ja) * 1997-02-09 1998-10-23 Hoya Corp 磁気記録媒体及びその製造方法
JP2002288823A (ja) 2002-03-14 2002-10-04 Nippon Sheet Glass Co Ltd 情報記録媒体用基板の製造方法
JP2004199846A (ja) * 2002-10-23 2004-07-15 Nippon Sheet Glass Co Ltd 磁気記録媒体用ガラス基板及びその製造方法
US7678511B2 (en) * 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
JP2007272995A (ja) 2006-03-31 2007-10-18 Hoya Corp 磁気ディスク装置および非磁性基板の良否判定方法、磁気ディスク、並びに磁気ディスク装置
WO2008072706A1 (ja) 2006-12-15 2008-06-19 Asahi Glass Company, Limited Euvリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
WO2010001843A1 (ja) 2008-06-30 2010-01-07 Hoya株式会社 磁気ディスク用基板及び磁気ディスク
JP5481299B2 (ja) 2010-07-22 2014-04-23 矢崎総業株式会社 導通検査治具の動作制御構造
JP5533395B2 (ja) 2010-07-26 2014-06-25 旭硝子株式会社 Euvリソグラフィ用反射型マスクブランクの製造方法
DE112012000658T5 (de) 2011-02-04 2013-11-07 Asahi Glass Company, Limited Substrat mit leitendem Film, Substrat mit Mehrschicht-Reflexionsfilm und Reflexionsmaskenrohling für eine EUV-Lithographie
JP6125772B2 (ja) 2011-09-28 2017-05-10 Hoya株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
JP5950535B2 (ja) * 2011-10-25 2016-07-13 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
WO2013062104A1 (ja) 2011-10-28 2013-05-02 旭硝子株式会社 Euvリソグラフィ用反射型マスクブランクの製造方法
KR102064643B1 (ko) 2012-03-30 2020-01-08 호야 가부시키가이샤 마스크 블랭크용 기판, 다층 반사막 부착 기판, 투과형 마스크 블랭크, 반사형 마스크 블랭크, 투과형 마스크, 반사형 마스크 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
KR20200047800A (ko) 2020-05-07
US20190155141A1 (en) 2019-05-23
JP2019056939A (ja) 2019-04-11
KR20160061913A (ko) 2016-06-01
JP6465720B2 (ja) 2019-02-06
US9746762B2 (en) 2017-08-29
TW201617728A (zh) 2016-05-16
KR101877896B1 (ko) 2018-07-12
WO2015046095A1 (ja) 2015-04-02
KR102127907B1 (ko) 2020-06-29
US20160124298A1 (en) 2016-05-05
SG11201509897WA (en) 2016-04-28
KR102107799B1 (ko) 2020-05-07
KR20170120718A (ko) 2017-10-31
TW201826009A (zh) 2018-07-16
US20170315439A1 (en) 2017-11-02
US10527927B2 (en) 2020-01-07
TWI626503B (zh) 2018-06-11
JP5729847B2 (ja) 2015-06-03
TW201516556A (zh) 2015-05-01
JP2015156034A (ja) 2015-08-27
JP2015088742A (ja) 2015-05-07
TWI530754B (zh) 2016-04-21
TWI652542B (zh) 2019-03-01
JP6630005B2 (ja) 2020-01-15
SG10201911502WA (en) 2020-02-27
US10209614B2 (en) 2019-02-19

Similar Documents

Publication Publication Date Title
SG10201805079YA (en) Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method
WO2015103394A3 (en) A metal thin film resistor and process
JP2015156034A5 (enExample)
JP2014157364A5 (ja) 透過型マスクブランク、透過型マスク及び半導体装置の製造方法
SG10201805334PA (en) Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device
TW201614811A (en) Nanocrystalline diamond carbon film for 3D NAND hardmask application
MY179245A (en) Photovoltaic devices and method of making
SG11201903409SA (en) Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
WO2009001665A1 (ja) 金属表面粗化層を有する金属層積層体及びその製造方法
CL2011001756A1 (es) Metodo de fabricacion de peliculas delgadas para aplicaciones fotovoltaicas o electronicas, que comprende fabricar una capa precursora de nanocristal y selenizar la capa precursora en una atmosfera que contiene selenio; y metodo de fabricacion de una capa precursora de nanocristal.
MY186796A (en) Photovoltaic devices and method of making
EP2720073A3 (en) Surface waveguide having a tapered region and method of forming
MY168096A (en) Magnetic-disk glass substrate, magnetic-disk glass substrate intermediate, and method for manufacturing magnetic-disk glass substrate
MY169200A (en) Magnetic-disk glass substrate, magnetic disk and method for manufacturing magnetic-disk glass substrate
MY168621A (en) Magnetic-disk glass substrate
MY166439A (en) Glass substrate for magnetic disk and magnetic disk
MY165866A (en) Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2019243882A3 (en) Semiconductor structure enhanced for high voltage applications
TW201129497A (en) silicon substrate having nanostructures and method for producing the same and application thereof
WO2018162580A3 (en) Deposited carbon film on etched silicon for on-chip supercapacitor
GB2541524A (en) Manufacturing process for integrated computational elements
WO2015088621A3 (en) Reduced fluid drag across a solid surface with a textured coating
WO2013064592A3 (en) Wafer scale technique for interconnecting vertically stacked semiconductor dies
MY192572A (en) Non-magnetic substrate for magnetic disk, and magnetic disk
MX2016003284A (es) Particulas metalicas mecanicamente deformadas.