SG10201805079YA - Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method - Google Patents

Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method

Info

Publication number
SG10201805079YA
SG10201805079YA SG10201805079YA SG10201805079YA SG10201805079YA SG 10201805079Y A SG10201805079Y A SG 10201805079YA SG 10201805079Y A SG10201805079Y A SG 10201805079YA SG 10201805079Y A SG10201805079Y A SG 10201805079YA SG 10201805079Y A SG10201805079Y A SG 10201805079YA
Authority
SG
Singapore
Prior art keywords
coated substrate
conductive film
mask blank
film coated
reflective mask
Prior art date
Application number
SG10201805079YA
Other languages
English (en)
Inventor
Kazuhiro Hamamoto
Yoichi Usui
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG10201805079YA publication Critical patent/SG10201805079YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/023—Optical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/416—Reflective
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00—Optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG10201805079YA 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method SG10201805079YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013202494 2013-09-27

Publications (1)

Publication Number Publication Date
SG10201805079YA true SG10201805079YA (en) 2018-07-30

Family

ID=52743232

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201805079YA SG10201805079YA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method
SG10201911502WA SG10201911502WA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method
SG11201509897WA SG11201509897WA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG10201911502WA SG10201911502WA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method
SG11201509897WA SG11201509897WA (en) 2013-09-27 2014-09-22 Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method

Country Status (6)

Country Link
US (3) US9746762B2 (enExample)
JP (3) JP5729847B2 (enExample)
KR (3) KR102127907B1 (enExample)
SG (3) SG10201805079YA (enExample)
TW (3) TWI626503B (enExample)
WO (1) WO2015046095A1 (enExample)

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SG11201710317RA (en) * 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP6873758B2 (ja) * 2016-03-28 2021-05-19 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法
US11048159B2 (en) * 2016-03-31 2021-06-29 Hoya Corporation Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
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KR20190100251A (ko) 2017-01-17 2019-08-28 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
WO2018155047A1 (ja) * 2017-02-27 2018-08-30 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
WO2019009212A1 (ja) * 2017-07-05 2019-01-10 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
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JP7492456B2 (ja) * 2018-11-07 2024-05-29 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP7250511B2 (ja) 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
DE102019100839B4 (de) * 2019-01-14 2024-11-14 Advanced Mask Technology Center Gmbh & Co. Kg Fotomaskenanordnung mit reflektierender fotomaske und verfahren zum herstellen einer reflektierenden fotomaske
JP7263872B2 (ja) 2019-03-25 2023-04-25 株式会社デンソー ドリルの製造方法
JP7350571B2 (ja) * 2019-08-30 2023-09-26 Hoya株式会社 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
US12346017B2 (en) * 2019-09-26 2025-07-01 Hoya Corporation Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
JP7271760B2 (ja) * 2020-03-27 2023-05-11 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR102464780B1 (ko) * 2020-09-02 2022-11-09 주식회사 에스앤에스텍 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크
JP7420027B2 (ja) * 2020-09-10 2024-01-23 信越化学工業株式会社 Euvマスクブランク用多層反射膜付き基板、その製造方法及びeuvマスクブランク
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
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JP7260078B2 (ja) * 2021-02-16 2023-04-18 Agc株式会社 Euvリソグラフィ用反射型マスクブランク、euvリソグラフィ用反射型マスク、およびそれらの製造方法
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Also Published As

Publication number Publication date
US20170315439A1 (en) 2017-11-02
KR20170120718A (ko) 2017-10-31
JP6465720B2 (ja) 2019-02-06
JP5729847B2 (ja) 2015-06-03
TWI530754B (zh) 2016-04-21
JP2019056939A (ja) 2019-04-11
US20190155141A1 (en) 2019-05-23
KR102107799B1 (ko) 2020-05-07
JP6630005B2 (ja) 2020-01-15
TW201617728A (zh) 2016-05-16
TW201826009A (zh) 2018-07-16
KR20160061913A (ko) 2016-06-01
JP2015156034A (ja) 2015-08-27
US10209614B2 (en) 2019-02-19
US10527927B2 (en) 2020-01-07
TWI626503B (zh) 2018-06-11
KR101877896B1 (ko) 2018-07-12
SG10201911502WA (en) 2020-02-27
TW201516556A (zh) 2015-05-01
JP2015088742A (ja) 2015-05-07
SG11201509897WA (en) 2016-04-28
US9746762B2 (en) 2017-08-29
TWI652542B (zh) 2019-03-01
KR102127907B1 (ko) 2020-06-29
WO2015046095A1 (ja) 2015-04-02
US20160124298A1 (en) 2016-05-05
KR20200047800A (ko) 2020-05-07

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